CA2023510A1 - Laser monochromatique a semiconducteur oscillant et methode de fabrication de reseaux de diffraction - Google Patents

Laser monochromatique a semiconducteur oscillant et methode de fabrication de reseaux de diffraction

Info

Publication number
CA2023510A1
CA2023510A1 CA2023510A CA2023510A CA2023510A1 CA 2023510 A1 CA2023510 A1 CA 2023510A1 CA 2023510 A CA2023510 A CA 2023510A CA 2023510 A CA2023510 A CA 2023510A CA 2023510 A1 CA2023510 A1 CA 2023510A1
Authority
CA
Canada
Prior art keywords
diffraction grating
resist
light
intensity
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA2023510A
Other languages
English (en)
Other versions
CA2023510C (fr
Inventor
Yuji Ohkura
Masatoshi Fujiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Yuji Ohkura
Masatoshi Fujiwara
Mitsubishi Denki Kabushiki Kaisha
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP1213553A external-priority patent/JPH0817262B2/ja
Priority claimed from JP14697690A external-priority patent/JPH0437803A/ja
Priority claimed from JP18984090A external-priority patent/JP2527833B2/ja
Application filed by Yuji Ohkura, Masatoshi Fujiwara, Mitsubishi Denki Kabushiki Kaisha filed Critical Yuji Ohkura
Publication of CA2023510A1 publication Critical patent/CA2023510A1/fr
Application granted granted Critical
Publication of CA2023510C publication Critical patent/CA2023510C/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings
    • G02B5/1847—Manufacturing methods
    • G02B5/1857—Manufacturing methods using exposure or etching means, e.g. holography, photolithography, exposure to electron or ion beams
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/001—Phase modulating patterns, e.g. refractive index patterns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/3086—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1215—Multiplicity of periods

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)
  • Semiconductor Lasers (AREA)
CA002023510A 1989-08-18 1990-08-17 Laser monochromatique a semiconducteur oscillant et methode de fabrication de reseaux de diffraction Expired - Fee Related CA2023510C (fr)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP1213553A JPH0817262B2 (ja) 1989-08-18 1989-08-18 単一波長発振半導体レーザ装置
JP1-213553 1989-08-18
JP14697690A JPH0437803A (ja) 1990-06-04 1990-06-04 回折格子の作製方法
JP2-146976 1990-06-04
JP18984090A JP2527833B2 (ja) 1990-07-17 1990-07-17 回折格子の製造方法
JP2-189840 1990-07-17

Publications (2)

Publication Number Publication Date
CA2023510A1 true CA2023510A1 (fr) 1991-02-19
CA2023510C CA2023510C (fr) 1994-03-29

Family

ID=27319269

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002023510A Expired - Fee Related CA2023510C (fr) 1989-08-18 1990-08-17 Laser monochromatique a semiconducteur oscillant et methode de fabrication de reseaux de diffraction

Country Status (4)

Country Link
US (2) US5238785A (fr)
EP (1) EP0413365B1 (fr)
CA (1) CA2023510C (fr)
DE (1) DE69018336T2 (fr)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2058405A1 (fr) * 1991-12-23 1993-06-24 Pierre Galarneau Echantillonneur de faisceaux holographiques
JPH08501158A (ja) * 1992-06-01 1996-02-06 ブリテイッシュ・テレコミュニケーションズ・パブリック・リミテッド・カンパニー 予め選択された減衰対波長特性を有するフィルタ
US5604081A (en) * 1992-08-14 1997-02-18 Siemens Aktiengesellschaft Method for producing a surface structure with reliefs
US5323266A (en) * 1993-02-26 1994-06-21 United States Of America As Represented By The Secretary Of The Air Force Electroformed buried gratings for high-power shared aperture systems
JP3218138B2 (ja) * 1994-02-22 2001-10-15 ブラザー工業株式会社 光走査装置
US5623473A (en) * 1994-06-30 1997-04-22 Nikon Corporation Method and apparatus for manufacturing a diffraction grating zone plate
JPH08255954A (ja) * 1995-03-17 1996-10-01 Mitsubishi Electric Corp 半導体レーザの構造及びその製造方法
WO1996036892A1 (fr) * 1995-05-19 1996-11-21 Cornell Research Foundation, Inc. Holographie auto-induite en cascade
WO1998029767A1 (fr) * 1997-01-04 1998-07-09 Munday Robert A Procede et appareil de creation de motifs holographiques
JP3180725B2 (ja) * 1997-08-05 2001-06-25 日本電気株式会社 分布帰還型半導体レーザ
JP4065468B2 (ja) * 1998-06-30 2008-03-26 キヤノン株式会社 露光装置及びこれを用いたデバイスの製造方法
US6501777B1 (en) * 1999-01-29 2002-12-31 Nec Corporation Distributed feedback semiconductor laser emitting device having asymmetrical diffraction gratings
JP4157654B2 (ja) * 1999-08-23 2008-10-01 独立行政法人 日本原子力研究開発機構 円錐回折斜入射分光器及び該分光器用回折格子
JP2004111709A (ja) * 2002-09-19 2004-04-08 Mitsubishi Electric Corp 半導体レーザ
JP4884081B2 (ja) * 2006-05-30 2012-02-22 ルネサスエレクトロニクス株式会社 分布帰還型半導体レーザ
US9097982B2 (en) * 2008-05-30 2015-08-04 Asml Netherlands B.V. Radiation system, radiation collector, radiation beam conditioning system, spectral purity filter for radiation system and method for forming a spectral purity filter
US20110025646A1 (en) * 2009-07-31 2011-02-03 Wu xin-min Extended infrared-sourced multi-touch screen
WO2018102002A1 (fr) * 2016-12-02 2018-06-07 Molecular Imprints, Inc. Configuration de couches optiques dans des procédés de lithographie par impression
CN112670381B (zh) * 2020-12-23 2023-02-28 武汉大学 具有表面非周期光栅图案的发光二极管及其制备方法
CN113904213B (zh) * 2021-12-08 2022-04-01 杭州拓致光电科技有限公司 一种基于光热折变玻璃的多波长锁波器及其制备方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4366235A (en) * 1981-02-17 1982-12-28 Polaroid Corporation Photosensitive element and method of preparing same
JPH0666509B2 (ja) * 1983-12-14 1994-08-24 株式会社日立製作所 分布帰還型半導体レ−ザ装置
JPS60191209A (ja) * 1984-03-12 1985-09-28 Nec Corp 回折格子の製造方法
US4826291A (en) * 1985-07-16 1989-05-02 Kokusai Denshin Denwa Kabushiki Kaisha Method for manufacturing diffraction grating
US5004673A (en) * 1987-04-20 1991-04-02 Environmental Research Institute Of Michigan Method of manufacturing surface relief patterns of variable cross-sectional geometry
JP2768940B2 (ja) * 1987-07-08 1998-06-25 三菱電機株式会社 単一波長発振半導体レーザ装置
JPH073909B2 (ja) * 1987-09-08 1995-01-18 三菱電機株式会社 半導体レーザの製造方法
JPH0228984A (ja) * 1988-07-19 1990-01-31 Matsushita Electric Ind Co Ltd 分布帰還型半導体レーザ
JP2619057B2 (ja) * 1989-05-22 1997-06-11 三菱電機株式会社 半導体レーザの製造方法

Also Published As

Publication number Publication date
EP0413365A3 (en) 1991-10-09
EP0413365A2 (fr) 1991-02-20
EP0413365B1 (fr) 1995-04-05
DE69018336D1 (de) 1995-05-11
DE69018336T2 (de) 1995-12-14
US5238785A (en) 1993-08-24
US5386433A (en) 1995-01-31
CA2023510C (fr) 1994-03-29

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