BRPI0814501A2 - Método para fabricar uma estrutura de diodo emissor de luz - Google Patents

Método para fabricar uma estrutura de diodo emissor de luz

Info

Publication number
BRPI0814501A2
BRPI0814501A2 BRPI0814501-6A2A BRPI0814501A BRPI0814501A2 BR PI0814501 A2 BRPI0814501 A2 BR PI0814501A2 BR PI0814501 A BRPI0814501 A BR PI0814501A BR PI0814501 A2 BRPI0814501 A2 BR PI0814501A2
Authority
BR
Brazil
Prior art keywords
manufacturing
led structure
led
Prior art date
Application number
BRPI0814501-6A2A
Other languages
English (en)
Inventor
Grigoriy Basin
Robert S West
Paul S Martin
Original Assignee
Koninkl Philips Electronics Nv
Philips Lumileds Lighting Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv, Philips Lumileds Lighting Co filed Critical Koninkl Philips Electronics Nv
Publication of BRPI0814501A2 publication Critical patent/BRPI0814501A2/pt
Publication of BRPI0814501B1 publication Critical patent/BRPI0814501B1/pt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0556—Disposition
    • H01L2224/05568—Disposition the whole external layer protruding from the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05573—Single external layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/81001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector involving a temporary auxiliary member not forming part of the bonding apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/921—Connecting a surface with connectors of different types
    • H01L2224/9212—Sequential connecting processes
    • H01L2224/92122—Sequential connecting processes the first connecting process involving a bump connector
    • H01L2224/92125—Sequential connecting processes the first connecting process involving a bump connector the second connecting process involving a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
BRPI0814501A 2007-07-09 2008-07-03 método para fabricar uma estrutura de diodo emissor de luz BRPI0814501B1 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/775,059 US7867793B2 (en) 2007-07-09 2007-07-09 Substrate removal during LED formation
PCT/IB2008/052681 WO2009007886A1 (en) 2007-07-09 2008-07-03 Substrate removal during led formation

Publications (2)

Publication Number Publication Date
BRPI0814501A2 true BRPI0814501A2 (pt) 2015-02-03
BRPI0814501B1 BRPI0814501B1 (pt) 2018-12-11

Family

ID=39952224

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0814501A BRPI0814501B1 (pt) 2007-07-09 2008-07-03 método para fabricar uma estrutura de diodo emissor de luz

Country Status (9)

Country Link
US (1) US7867793B2 (pt)
EP (1) EP2168178B1 (pt)
JP (1) JP5654344B2 (pt)
KR (1) KR101535168B1 (pt)
CN (1) CN101743648B (pt)
BR (1) BRPI0814501B1 (pt)
RU (1) RU2466480C2 (pt)
TW (1) TWI467796B (pt)
WO (1) WO2009007886A1 (pt)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008186959A (ja) * 2007-01-29 2008-08-14 Toyoda Gosei Co Ltd Ｉｉｉ−ｖ族半導体素子、およびその製造方法
JP4290745B2 (ja) * 2007-03-16 2009-07-08 豊田合成株式会社 Ｉｉｉ−ｖ族半導体素子の製造方法
US20090230409A1 (en) * 2008-03-17 2009-09-17 Philips Lumileds Lighting Company, Llc Underfill process for flip-chip leds
JP4724222B2 (ja) 2008-12-12 2011-07-13 株式会社東芝 発光装置の製造方法
KR101601622B1 (ko) * 2009-10-13 2016-03-09 삼성전자주식회사 발광다이오드 소자, 발광 장치 및 발광다이오드 소자의 제조방법
CN102194985B (zh) * 2010-03-04 2013-11-06 展晶科技(深圳)有限公司 晶圆级封装之方法
JP5343040B2 (ja) * 2010-06-07 2013-11-13 株式会社東芝 半導体発光装置
KR20130136906A (ko) 2010-06-18 2013-12-13 글로 에이비 나노와이어 ｌｅｄ 구조와 이를 제조하기 위한 방법
JP2012094716A (ja) * 2010-10-27 2012-05-17 Asahi Kasei E-Materials Corp 接続構造体及びその製造方法
KR101591991B1 (ko) * 2010-12-02 2016-02-05 삼성전자주식회사 발광소자 패키지 및 그 제조 방법
US8350251B1 (en) 2011-09-26 2013-01-08 Glo Ab Nanowire sized opto-electronic structure and method for manufacturing the same
KR102031654B1 (ko) * 2012-05-23 2019-10-15 삼성디스플레이 주식회사 윈도우 구조물, 그 제조 방법, 윈도우 구조물을 포함하는 카메라가 탑재된 전자 장치 및 그 제조 방법
TW201403892A (zh) * 2012-07-10 2014-01-16 Lextar Electronics Corp 發光二極體的基板及使用該基板的固晶方法
JP6089507B2 (ja) * 2012-08-31 2017-03-08 日亜化学工業株式会社 発光装置およびその製造方法
JP2014179569A (ja) * 2013-03-15 2014-09-25 Nichia Chem Ind Ltd 発光装置およびその製造方法
US9548247B2 (en) 2013-07-22 2017-01-17 Infineon Technologies Austria Ag Methods for producing semiconductor devices
CN105489746B (zh) * 2014-09-19 2018-02-23 展晶科技(深圳)有限公司 发光芯片模组、发光二极管以及发光芯片模组的制造方法
JP6519127B2 (ja) * 2014-09-19 2019-05-29 日亜化学工業株式会社 発光装置の製造方法
CN106159058A (zh) * 2015-04-09 2016-11-23 江西省晶瑞光电有限公司 一种led封装结构及其制作方法
CN105244423B (zh) * 2015-10-30 2018-11-20 漳州立达信光电子科技有限公司 无衬底led芯片的封装方法及无衬底led芯片
US9721812B2 (en) * 2015-11-20 2017-08-01 International Business Machines Corporation Optical device with precoated underfill
US10461068B2 (en) * 2017-03-15 2019-10-29 The United States Of America As Represented By The Secretary Of The Air Force Highly integrated RF power and power conversion based on Ga2O3 technology
US11024611B1 (en) * 2017-06-09 2021-06-01 Goertek, Inc. Micro-LED array transfer method, manufacturing method and display device
US10490428B2 (en) * 2017-12-22 2019-11-26 Lumidleds LLC Method and system for dual stretching of wafers for isolated segmented chip scale packages
US10964867B2 (en) * 2018-10-08 2021-03-30 Facebook Technologies, Llc Using underfill or flux to promote placing and parallel bonding of light emitting diodes
JP7257187B2 (ja) * 2019-03-05 2023-04-13 東レエンジニアリング株式会社 チップ転写板ならびにチップ転写方法、画像表示装置の製造方法および半導体装置の製造方法
US11404600B2 (en) 2019-06-11 2022-08-02 Meta Platforms Technologies, Llc Display device and its process for curing post-applied underfill material and bonding packaging contacts via pulsed lasers
US11575069B2 (en) 2019-06-11 2023-02-07 Meta Platforms Technologies, Llc Employing deformable contacts and pre-applied underfill for bonding LED devices via lasers
US11164844B2 (en) * 2019-09-12 2021-11-02 Taiwan Semiconductor Manufacturing Company, Ltd. Double etch stop layer to protect semiconductor device layers from wet chemical etch
CN113611786B (zh) * 2021-08-02 2022-09-27 东莞市中麒光电技术有限公司 剥离良率高且方便倒膜的led芯片巨量转移方法
CN115528161A (zh) * 2022-10-26 2022-12-27 上海天马微电子有限公司 显示面板的制作方法、显示面板及显示装置

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5128746A (en) 1990-09-27 1992-07-07 Motorola, Inc. Adhesive and encapsulant material with fluxing properties
US5376580A (en) * 1993-03-19 1994-12-27 Hewlett-Packard Company Wafer bonding of light emitting diode layers
RU2142176C1 (ru) * 1997-06-10 1999-11-27 Карпович Нина Васильевна Источник света
US6399426B1 (en) 1998-07-21 2002-06-04 Miguel Albert Capote Semiconductor flip-chip package and method for the fabrication thereof
US20030148024A1 (en) * 2001-10-05 2003-08-07 Kodas Toivo T. Low viscosity precursor compositons and methods for the depositon of conductive electronic features
US6352881B1 (en) 1999-07-22 2002-03-05 National Semiconductor Corporation Method and apparatus for forming an underfill adhesive layer
US6245595B1 (en) 1999-07-22 2001-06-12 National Semiconductor Corporation Techniques for wafer level molding of underfill encapsulant
US6514782B1 (en) 1999-12-22 2003-02-04 Lumileds Lighting, U.S., Llc Method of making a III-nitride light-emitting device with increased light generating capability
JP3906653B2 (ja) * 2000-07-18 2007-04-18 ソニー株式会社 画像表示装置及びその製造方法
JP3589187B2 (ja) * 2000-07-31 2004-11-17 日亜化学工業株式会社 発光装置の形成方法
KR100801945B1 (ko) * 2000-10-17 2008-02-12 쓰리엠 이노베이티브 프로퍼티즈 캄파니 플립칩 접착을 위한 선-언더필드된 땜납 범프형 웨이퍼의 용매를 이용한 연마
JP2002271014A (ja) 2001-03-09 2002-09-20 Hitachi Kokusai Electric Inc 電子部品の実装方法
RU2200358C1 (ru) * 2001-06-05 2003-03-10 Хан Владимир Александрович Полупроводниковый излучающий диод
TW504811B (en) * 2001-10-12 2002-10-01 Advanced Semiconductor Eng Flip-chip packaging structure and the forming method
US6869832B2 (en) 2003-02-07 2005-03-22 Lockheed Martin Corporation Method for planarizing bumped die
KR100520080B1 (ko) 2003-07-18 2005-10-12 삼성전자주식회사 반도체칩 표면실장방법
US7019330B2 (en) * 2003-08-28 2006-03-28 Lumileds Lighting U.S., Llc Resonant cavity light emitting device
JP4438492B2 (ja) * 2003-09-11 2010-03-24 日亜化学工業株式会社 半導体装置およびその製造方法
WO2005062905A2 (en) 2003-12-24 2005-07-14 Gelcore Llc Laser lift-off of sapphire from a nitride flip-chip
US20050161779A1 (en) 2004-01-26 2005-07-28 Hui Peng Flip chip assemblies and lamps of high power GaN LEDs, wafer level flip chip package process, and method of fabricating the same
US6943061B1 (en) 2004-04-12 2005-09-13 Ns Electronics Bangkok (1993) Ltd. Method of fabricating semiconductor chip package using screen printing of epoxy on wafer
JP2006100787A (ja) 2004-08-31 2006-04-13 Toyoda Gosei Co Ltd 発光装置および発光素子
US7256483B2 (en) 2004-10-28 2007-08-14 Philips Lumileds Lighting Company, Llc Package-integrated thin film LED
US7932111B2 (en) * 2005-02-23 2011-04-26 Cree, Inc. Substrate removal process for high light extraction LEDs
US7736945B2 (en) 2005-06-09 2010-06-15 Philips Lumileds Lighting Company, Llc LED assembly having maximum metal support for laser lift-off of growth substrate
US7754507B2 (en) * 2005-06-09 2010-07-13 Philips Lumileds Lighting Company, Llc Method of removing the growth substrate of a semiconductor light emitting device
JP2009500872A (ja) 2005-07-11 2009-01-08 ルミネイション リミテッド ライアビリティ カンパニー 光抽出が改善したレーザリフトオフｌｅｄ
US8174025B2 (en) 2006-06-09 2012-05-08 Philips Lumileds Lighting Company, Llc Semiconductor light emitting device including porous layer
US9111950B2 (en) * 2006-09-28 2015-08-18 Philips Lumileds Lighting Company, Llc Process for preparing a semiconductor structure for mounting

Also Published As

Publication number Publication date
RU2466480C2 (ru) 2012-11-10
TWI467796B (zh) 2015-01-01
TW200924237A (en) 2009-06-01
JP5654344B2 (ja) 2015-01-14
EP2168178B1 (en) 2019-03-20
BRPI0814501B1 (pt) 2018-12-11
EP2168178A1 (en) 2010-03-31
WO2009007886A1 (en) 2009-01-15
JP2010533374A (ja) 2010-10-21
US7867793B2 (en) 2011-01-11
KR20100047255A (ko) 2010-05-07
US20090017566A1 (en) 2009-01-15
KR101535168B1 (ko) 2015-07-09
CN101743648A (zh) 2010-06-16
CN101743648B (zh) 2013-02-06
RU2010104249A (ru) 2011-08-20

Similar Documents

Publication Publication Date Title
BRPI0814501A2 (pt) Método para fabricar uma estrutura de diodo emissor de luz
ITMI20070120A1 (it) Faretto a led
BRPI0811738A2 (pt) Método para a coordenação de uma pluralidade de sensores
BRPI0916082A2 (pt) método para formação de um diodo emissor de luz convertido com fósforo (pc - led), diodo emissor de luz convertido com fósforo (pc - led), e, estrutura intermediária de diodo emissor de luz (led)
BRPI0813238A2 (pt) Estrutura de caixa de diodo emissor de luz
BRPI0921138A2 (pt) montagem para uma ferramenta substituível
DE102007040444B8 (de) LED-Lampe
BRPI0812164A2 (pt) Técnicas para provisão automática de software
BRPI0817352A2 (pt) Aparelho de diodo emissor de luz
BRPI0817936A2 (pt) Produto emissor de luz, como uma lanterna
BRPI0819238A2 (pt) Métodos para a produção de caseína
BRPI0820676A2 (pt) Dispositivo para uma roldana
BRPI0917051A2 (pt) conjunto modular flexível e método para a fabricação de um conjunto modular flexível
BRPI0813858A2 (pt) Método para produzir peptídeo
BRPI0812741A2 (pt) Método para separação de glóbulos
DE602007004291D1 (de) Leuchte
BR112012003154A2 (pt) descanso para uma motocicleta
BRPI0815306A2 (pt) Composição de limpeza e método para manufaturar uma composição de limpeza
BRPI0720182A2 (pt) Método para ajustar uma conexão bidirecional
BRPI0913593A2 (pt) alojamento para uma unidade de conexão
BRPI0911387A2 (pt) método para a fabricação de cimento
DE112007003715A5 (de) Parallelkurbelgetriebe
BR112012006732A2 (pt) unidade de disparo e método para fabricar uma unidade de disparo
BRPI0820369A2 (pt) Método para a produção de lipídeo
BRPI0719526A2 (pt) Método para a purificação de dnak

Legal Events

Date Code Title Description
B25G Requested change of headquarter approved

Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V. (NL) , PHILIP

B25D Requested change of name of applicant approved

Owner name: PHILIPS LUMILEDS LIGHTING COMPANY, LLC (US) , KONI

B07A Application suspended after technical examination (opinion) [chapter 7.1 patent gazette]
B09A Decision: intention to grant [chapter 9.1 patent gazette]
B16A Patent or certificate of addition of invention granted [chapter 16.1 patent gazette]

Free format text: PRAZO DE VALIDADE: 10 (DEZ) ANOS CONTADOS A PARTIR DE 11/12/2018, OBSERVADAS AS CONDICOES LEGAIS.

B25D Requested change of name of applicant approved

Owner name: KONINKLIJKE PHILIPS N. V. (NL) ; LUMILEDS LLC

B25A Requested transfer of rights approved

Owner name: LUMILEDS HOLDING B.V. (NL)

B25B Requested transfer of rights rejected

Owner name: LUMILEDS HOLDING B.V. (NL)

Free format text: INDEFERIDO O PEDIDO DE TRANSFERENCIA CONTIDO NA PETICAO 870190039936 DE 29/04/2019, EM VIRTUDE DA SOLICITACAO JA TER SIDO ATENDIDA PELA PETICAO 870190039219 DE 25/04/2019 E PUBLICADA NA RPI2531 DE 09/07/2019.