BRPI0720568A2 - Material de carbono microporoso com depósito de plasma - Google Patents

Material de carbono microporoso com depósito de plasma Download PDF

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Publication number
BRPI0720568A2
BRPI0720568A2 BRPI0720568-6A BRPI0720568A BRPI0720568A2 BR PI0720568 A2 BRPI0720568 A2 BR PI0720568A2 BR PI0720568 A BRPI0720568 A BR PI0720568A BR PI0720568 A2 BRPI0720568 A2 BR PI0720568A2
Authority
BR
Brazil
Prior art keywords
layer
hydrocarbon
microporous carbon
plasma
microporous
Prior art date
Application number
BRPI0720568-6A
Other languages
English (en)
Portuguese (pt)
Inventor
M. Paolucci Dora
M. David Moses
A. Rakow Neal
E. Trend John
Original Assignee
3M Innovative Properties Company
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Company filed Critical 3M Innovative Properties Company
Publication of BRPI0720568A2 publication Critical patent/BRPI0720568A2/pt

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D67/00—Processes specially adapted for manufacturing semi-permeable membranes for separation processes or apparatus
    • B01D67/0039—Inorganic membrane manufacture
    • B01D67/0053—Inorganic membrane manufacture by inducing porosity into non porous precursor membranes
    • B01D67/0058—Inorganic membrane manufacture by inducing porosity into non porous precursor membranes by selective elimination of components, e.g. by leaching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D71/00—Semi-permeable membranes for separation processes or apparatus characterised by the material; Manufacturing processes specially adapted therefor
    • B01D71/02—Inorganic material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D71/00—Semi-permeable membranes for separation processes or apparatus characterised by the material; Manufacturing processes specially adapted therefor
    • B01D71/02—Inorganic material
    • B01D71/021—Carbon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3406—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y10T428/249978—Voids specified as micro
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T442/00—Fabric [woven, knitted, or nonwoven textile or cloth, etc.]
    • Y10T442/60—Nonwoven fabric [i.e., nonwoven strand or fiber material]
    • Y10T442/608—Including strand or fiber material which is of specific structural definition
    • Y10T442/614—Strand or fiber material specified as having microdimensions [i.e., microfiber]
    • Y10T442/624—Microfiber is carbon or carbonaceous

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
BRPI0720568-6A 2006-12-29 2007-12-13 Material de carbono microporoso com depósito de plasma BRPI0720568A2 (pt)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/618,010 US7901776B2 (en) 2006-12-29 2006-12-29 Plasma deposited microporous carbon material
US11/618.010 2006-12-29
PCT/US2007/087347 WO2008082897A1 (en) 2006-12-29 2007-12-13 Plasma deposited microporous carbon material

Publications (1)

Publication Number Publication Date
BRPI0720568A2 true BRPI0720568A2 (pt) 2014-02-04

Family

ID=39226855

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0720568-6A BRPI0720568A2 (pt) 2006-12-29 2007-12-13 Material de carbono microporoso com depósito de plasma

Country Status (7)

Country Link
US (1) US7901776B2 (enExample)
EP (1) EP2111481A1 (enExample)
JP (1) JP2010514937A (enExample)
KR (1) KR20090101289A (enExample)
CN (1) CN101573470B (enExample)
BR (1) BRPI0720568A2 (enExample)
WO (1) WO2008082897A1 (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2208058B1 (en) 2007-10-05 2018-07-11 3M Innovative Properties Company Organic chemical sensor comprising plasma-deposited microporous layer, and method of making and using
US8110476B2 (en) 2008-04-11 2012-02-07 Sandisk 3D Llc Memory cell that includes a carbon-based memory element and methods of forming the same
WO2010002575A2 (en) * 2008-06-30 2010-01-07 3M Innovative Properties Company Exposure indicating device
US8466044B2 (en) 2008-08-07 2013-06-18 Sandisk 3D Llc Memory cell that includes a carbon-based memory element and methods forming the same
KR101698615B1 (ko) 2008-12-10 2017-01-20 램 리써치 코포레이션 실리콘 전극 연마를 용이하게 하는 플래튼 및 어댑터 어셈블리
JP5800897B2 (ja) 2010-06-15 2015-10-28 スリーエム イノベイティブ プロパティズ カンパニー 可変静電容量センサ及びその作製方法
JP5810652B2 (ja) * 2011-06-13 2015-11-11 ソニー株式会社 液体塗布用繊維複合体
GB2493698B (en) * 2011-08-08 2018-02-28 Univ Nottingham Trent Surface plasmon resonance in thin films
DE102012213178A1 (de) * 2012-04-30 2013-10-31 At & S Austria Technologie & Systemtechnik Aktiengesellschaft LED-Modul mit Leiterplatte
TWI565532B (zh) * 2012-08-07 2017-01-11 國立交通大學 奈米球溶液塗佈方法與其應用
CN102899966B (zh) * 2012-10-22 2017-08-29 杭州春胜纸业有限公司 微米碳粉电磁屏蔽纸的制造方法
KR101408136B1 (ko) * 2012-10-26 2014-06-17 한국과학기술연구원 나노 다공성 물질의 제조방법 및 나노 다공성 물질
JP5937033B2 (ja) 2013-03-22 2016-06-22 株式会社東芝 半導体装置、半導体装置の製造方法、および半導体装置の製造装置
US20170001153A1 (en) * 2013-11-29 2017-01-05 National Institute For Materials Science Nanofiltration or reverse osmosis membrane made of hard carbon film, filtering filter, two-layer-bonded-type filtering filter, and methods for manufacturing same
US9735366B2 (en) * 2014-09-30 2017-08-15 Cnm Technologies Gmbh Heterostructure comprising a carbon nanomembrane
EP3234214B1 (en) * 2014-12-19 2024-08-28 Tata Steel Nederland Technology B.V. Filter device to remove particles from a vapour stream
CN106404860A (zh) * 2016-08-30 2017-02-15 济南大学 一种氮化碳修饰三维石墨电极的制备方法及电致化学发光传感应用
CN108344714B (zh) * 2018-01-16 2020-07-31 东南大学 基于有序多孔纳米结构薄膜干涉效应的生物检测仪及其进行生物分子检测的方法
CN111229164B (zh) * 2020-02-21 2022-03-08 大连理工大学 一种分离烯烃烷烃的微孔炭吸附剂及其制备方法和应用
US20210315293A1 (en) * 2020-04-08 2021-10-14 Luciano Castillo Wearable face mask with anti-viral filtration media
KR20240045005A (ko) * 2022-09-29 2024-04-05 (주)포인트엔지니어링 금속 부품 및 이를 포함하는 공정 챔버
CN118899205B (zh) * 2024-07-24 2026-02-03 深圳碳闪科技有限公司 金规则微筛支持膜的制备方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4685940A (en) 1984-03-12 1987-08-11 Abraham Soffer Separation device
IL105142A (en) 1993-03-23 1997-01-10 Aga Ab Method of improving the selectivity of carbon membranes by chemical carbon vapor deposition
JPH0798278A (ja) * 1993-08-06 1995-04-11 Tdk Corp 化学物質センサ
JP3116793B2 (ja) 1995-11-24 2000-12-11 三菱自動車工業株式会社 ウインドガラスの仮止め用クリップ
ATE259893T1 (de) * 1996-05-15 2004-03-15 Hyperion Catalysis Int Starre, poröse kohlenstoffstrukturen, verfahren zu deren herstellung und verwendung und diese strukturen enthaltende erzeugnisse
US5972079A (en) * 1996-06-28 1999-10-26 University Of Delaware Supported carbogenic molecular sieve membrane and method of producing the same
RU2151737C1 (ru) * 1997-05-30 2000-06-27 Акционерное общество закрытого типа "Карбид" Способ получения пористого углеродного изделия и пористое углеродное изделие, полученное этим способом
US6039792A (en) 1997-06-24 2000-03-21 Regents Of The University Of California And Bp Amoco Corporation Methods of forming and using porous structures for energy efficient separation of light gases by capillary condensation
US6331209B1 (en) * 1999-04-21 2001-12-18 Jin Jang Method of forming carbon nanotubes
US6297293B1 (en) * 1999-09-15 2001-10-02 Tda Research, Inc. Mesoporous carbons and polymers
ATE470647T1 (de) * 2001-04-06 2010-06-15 Univ Carnegie Mellon Verfahren zur herstellung von nanostrukturierten materialien
US6730364B2 (en) 2002-03-28 2004-05-04 National Science Council Preparation of carbon molecular sieve membranes on porous substrate
JP2005533893A (ja) * 2002-07-22 2005-11-10 アスペン・エアロジェルズ・インコーポレーテッド ポリイミドエーロゲル、炭素エーロゲル、及び金属炭化物エーロゲル並びにこれらの製造方法。
US7030167B2 (en) * 2003-06-25 2006-04-18 Agilent Technologies, Inc. Nanoporous structures produced from self-assembling molecules
GB0317557D0 (en) 2003-07-26 2003-08-27 Univ Manchester Microporous polymer material
US7109098B1 (en) * 2005-05-17 2006-09-19 Applied Materials, Inc. Semiconductor junction formation process including low temperature plasma deposition of an optical absorption layer and high speed optical annealing
JP2006335596A (ja) 2005-06-01 2006-12-14 Tohoku Univ 規則性のある大表面積ミクロポーラス炭素の簡便な合成方法

Also Published As

Publication number Publication date
WO2008082897A1 (en) 2008-07-10
CN101573470A (zh) 2009-11-04
KR20090101289A (ko) 2009-09-24
CN101573470B (zh) 2011-08-03
JP2010514937A (ja) 2010-05-06
EP2111481A1 (en) 2009-10-28
US20080160858A1 (en) 2008-07-03
US7901776B2 (en) 2011-03-08

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B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]

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B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: REFERENTE AO DESPACHO 8.6 PUBLICADO NA RPI 2284 DE 14/10/2014.