KR20090101289A - 플라즈마 증착된 미공성 탄소 재료 - Google Patents

플라즈마 증착된 미공성 탄소 재료 Download PDF

Info

Publication number
KR20090101289A
KR20090101289A KR1020097015815A KR20097015815A KR20090101289A KR 20090101289 A KR20090101289 A KR 20090101289A KR 1020097015815 A KR1020097015815 A KR 1020097015815A KR 20097015815 A KR20097015815 A KR 20097015815A KR 20090101289 A KR20090101289 A KR 20090101289A
Authority
KR
South Korea
Prior art keywords
layer
hydrocarbon
microporous carbon
plasma
carbon material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020097015815A
Other languages
English (en)
Korean (ko)
Inventor
도라 엠. 파올루치
모지스 엠. 데이비드
닐 에이. 라코우
존 이. 트렌드
Original Assignee
쓰리엠 이노베이티브 프로퍼티즈 컴파니
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 쓰리엠 이노베이티브 프로퍼티즈 컴파니 filed Critical 쓰리엠 이노베이티브 프로퍼티즈 컴파니
Publication of KR20090101289A publication Critical patent/KR20090101289A/ko
Ceased legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D67/00—Processes specially adapted for manufacturing semi-permeable membranes for separation processes or apparatus
    • B01D67/0039—Inorganic membrane manufacture
    • B01D67/0053—Inorganic membrane manufacture by inducing porosity into non porous precursor membranes
    • B01D67/0058—Inorganic membrane manufacture by inducing porosity into non porous precursor membranes by selective elimination of components, e.g. by leaching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D71/00—Semi-permeable membranes for separation processes or apparatus characterised by the material; Manufacturing processes specially adapted therefor
    • B01D71/02—Inorganic material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D71/00—Semi-permeable membranes for separation processes or apparatus characterised by the material; Manufacturing processes specially adapted therefor
    • B01D71/02—Inorganic material
    • B01D71/021—Carbon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3406—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y10T428/249978—Voids specified as micro
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T442/00—Fabric [woven, knitted, or nonwoven textile or cloth, etc.]
    • Y10T442/60—Nonwoven fabric [i.e., nonwoven strand or fiber material]
    • Y10T442/608—Including strand or fiber material which is of specific structural definition
    • Y10T442/614—Strand or fiber material specified as having microdimensions [i.e., microfiber]
    • Y10T442/624—Microfiber is carbon or carbonaceous

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
KR1020097015815A 2006-12-29 2007-12-13 플라즈마 증착된 미공성 탄소 재료 Ceased KR20090101289A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/618,010 2006-12-29
US11/618,010 US7901776B2 (en) 2006-12-29 2006-12-29 Plasma deposited microporous carbon material

Publications (1)

Publication Number Publication Date
KR20090101289A true KR20090101289A (ko) 2009-09-24

Family

ID=39226855

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020097015815A Ceased KR20090101289A (ko) 2006-12-29 2007-12-13 플라즈마 증착된 미공성 탄소 재료

Country Status (7)

Country Link
US (1) US7901776B2 (enExample)
EP (1) EP2111481A1 (enExample)
JP (1) JP2010514937A (enExample)
KR (1) KR20090101289A (enExample)
CN (1) CN101573470B (enExample)
BR (1) BRPI0720568A2 (enExample)
WO (1) WO2008082897A1 (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2208058B1 (en) 2007-10-05 2018-07-11 3M Innovative Properties Company Organic chemical sensor comprising plasma-deposited microporous layer, and method of making and using
US8110476B2 (en) 2008-04-11 2012-02-07 Sandisk 3D Llc Memory cell that includes a carbon-based memory element and methods of forming the same
WO2010002575A2 (en) * 2008-06-30 2010-01-07 3M Innovative Properties Company Exposure indicating device
US8466044B2 (en) 2008-08-07 2013-06-18 Sandisk 3D Llc Memory cell that includes a carbon-based memory element and methods forming the same
KR101698615B1 (ko) 2008-12-10 2017-01-20 램 리써치 코포레이션 실리콘 전극 연마를 용이하게 하는 플래튼 및 어댑터 어셈블리
JP5800897B2 (ja) 2010-06-15 2015-10-28 スリーエム イノベイティブ プロパティズ カンパニー 可変静電容量センサ及びその作製方法
JP5810652B2 (ja) * 2011-06-13 2015-11-11 ソニー株式会社 液体塗布用繊維複合体
GB2493698B (en) * 2011-08-08 2018-02-28 Univ Nottingham Trent Surface plasmon resonance in thin films
DE102012213178A1 (de) * 2012-04-30 2013-10-31 At & S Austria Technologie & Systemtechnik Aktiengesellschaft LED-Modul mit Leiterplatte
TWI565532B (zh) * 2012-08-07 2017-01-11 國立交通大學 奈米球溶液塗佈方法與其應用
CN102899966B (zh) * 2012-10-22 2017-08-29 杭州春胜纸业有限公司 微米碳粉电磁屏蔽纸的制造方法
KR101408136B1 (ko) * 2012-10-26 2014-06-17 한국과학기술연구원 나노 다공성 물질의 제조방법 및 나노 다공성 물질
JP5937033B2 (ja) 2013-03-22 2016-06-22 株式会社東芝 半導体装置、半導体装置の製造方法、および半導体装置の製造装置
US20170001153A1 (en) * 2013-11-29 2017-01-05 National Institute For Materials Science Nanofiltration or reverse osmosis membrane made of hard carbon film, filtering filter, two-layer-bonded-type filtering filter, and methods for manufacturing same
US9735366B2 (en) * 2014-09-30 2017-08-15 Cnm Technologies Gmbh Heterostructure comprising a carbon nanomembrane
EP3234214B1 (en) * 2014-12-19 2024-08-28 Tata Steel Nederland Technology B.V. Filter device to remove particles from a vapour stream
CN106404860A (zh) * 2016-08-30 2017-02-15 济南大学 一种氮化碳修饰三维石墨电极的制备方法及电致化学发光传感应用
CN108344714B (zh) * 2018-01-16 2020-07-31 东南大学 基于有序多孔纳米结构薄膜干涉效应的生物检测仪及其进行生物分子检测的方法
CN111229164B (zh) * 2020-02-21 2022-03-08 大连理工大学 一种分离烯烃烷烃的微孔炭吸附剂及其制备方法和应用
US20210315293A1 (en) * 2020-04-08 2021-10-14 Luciano Castillo Wearable face mask with anti-viral filtration media
KR20240045005A (ko) * 2022-09-29 2024-04-05 (주)포인트엔지니어링 금속 부품 및 이를 포함하는 공정 챔버
CN118899205B (zh) * 2024-07-24 2026-02-03 深圳碳闪科技有限公司 金规则微筛支持膜的制备方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4685940A (en) 1984-03-12 1987-08-11 Abraham Soffer Separation device
IL105142A (en) 1993-03-23 1997-01-10 Aga Ab Method of improving the selectivity of carbon membranes by chemical carbon vapor deposition
JPH0798278A (ja) * 1993-08-06 1995-04-11 Tdk Corp 化学物質センサ
JP3116793B2 (ja) 1995-11-24 2000-12-11 三菱自動車工業株式会社 ウインドガラスの仮止め用クリップ
ATE259893T1 (de) * 1996-05-15 2004-03-15 Hyperion Catalysis Int Starre, poröse kohlenstoffstrukturen, verfahren zu deren herstellung und verwendung und diese strukturen enthaltende erzeugnisse
US5972079A (en) * 1996-06-28 1999-10-26 University Of Delaware Supported carbogenic molecular sieve membrane and method of producing the same
RU2151737C1 (ru) * 1997-05-30 2000-06-27 Акционерное общество закрытого типа "Карбид" Способ получения пористого углеродного изделия и пористое углеродное изделие, полученное этим способом
US6039792A (en) 1997-06-24 2000-03-21 Regents Of The University Of California And Bp Amoco Corporation Methods of forming and using porous structures for energy efficient separation of light gases by capillary condensation
US6331209B1 (en) * 1999-04-21 2001-12-18 Jin Jang Method of forming carbon nanotubes
US6297293B1 (en) * 1999-09-15 2001-10-02 Tda Research, Inc. Mesoporous carbons and polymers
ATE470647T1 (de) * 2001-04-06 2010-06-15 Univ Carnegie Mellon Verfahren zur herstellung von nanostrukturierten materialien
US6730364B2 (en) 2002-03-28 2004-05-04 National Science Council Preparation of carbon molecular sieve membranes on porous substrate
JP2005533893A (ja) * 2002-07-22 2005-11-10 アスペン・エアロジェルズ・インコーポレーテッド ポリイミドエーロゲル、炭素エーロゲル、及び金属炭化物エーロゲル並びにこれらの製造方法。
US7030167B2 (en) * 2003-06-25 2006-04-18 Agilent Technologies, Inc. Nanoporous structures produced from self-assembling molecules
GB0317557D0 (en) 2003-07-26 2003-08-27 Univ Manchester Microporous polymer material
US7109098B1 (en) * 2005-05-17 2006-09-19 Applied Materials, Inc. Semiconductor junction formation process including low temperature plasma deposition of an optical absorption layer and high speed optical annealing
JP2006335596A (ja) 2005-06-01 2006-12-14 Tohoku Univ 規則性のある大表面積ミクロポーラス炭素の簡便な合成方法

Also Published As

Publication number Publication date
WO2008082897A1 (en) 2008-07-10
CN101573470A (zh) 2009-11-04
CN101573470B (zh) 2011-08-03
JP2010514937A (ja) 2010-05-06
EP2111481A1 (en) 2009-10-28
BRPI0720568A2 (pt) 2014-02-04
US20080160858A1 (en) 2008-07-03
US7901776B2 (en) 2011-03-08

Similar Documents

Publication Publication Date Title
CN101573470B (zh) 等离子体沉积的微孔碳材料
KR101331710B1 (ko) 플라즈마 증착된 미공성 분석물 검출 층
KR101372725B1 (ko) 침투성 나노입자 반사기
AU2008308827B2 (en) Organic chemical sensor comprising plasma-deposited microporous layer, and method of making and using
CN103492872B (zh) 使用吸收性传感器元件的方法
RU2360232C2 (ru) Колориметрический датчик
WO2011040868A1 (en) Nanoplasmonic device
WO2021010906A2 (en) Adsorbable polymeric surface-enhanced raman spectroscopy substrates and the fabrication process
De Stefano et al. Protein‐modified porous silicon nanostructures
EP3085434A1 (en) Nanofiltration or reverse osmosis membrane made of hard carbon film, filtering filter, two-layer-bonded-type filtering filter, and methods for manufacturing same
Starovoytov et al. Monitoring of localized plasmon resonance in an inhomogeneous ensemble of silver nanoparticles at the boundary of two media
Cho et al. Fabrication and optical characterization of multi-encoded rugate porous silicon/polymer composite
AU2012201892B2 (en) Permeable nanoparticle reflector
Korotcenkov POROUS SEMICONDUCTORS
WO2002033389A1 (en) Methods for nondestructive evaluation of defects in a transparent coating

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000