BRPI0618329A2 - transistor de efeito de campo - Google Patents
transistor de efeito de campo Download PDFInfo
- Publication number
- BRPI0618329A2 BRPI0618329A2 BRPI0618329-8A BRPI0618329A BRPI0618329A2 BR PI0618329 A2 BRPI0618329 A2 BR PI0618329A2 BR PI0618329 A BRPI0618329 A BR PI0618329A BR PI0618329 A2 BRPI0618329 A2 BR PI0618329A2
- Authority
- BR
- Brazil
- Prior art keywords
- amorphous oxide
- film
- field effect
- interface
- crystalline region
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
- H10D30/6756—Amorphous oxide semiconductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/40—Crystalline structures
Landscapes
- Thin Film Transistor (AREA)
- Dram (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005-323689 | 2005-11-08 | ||
| JP2005323689 | 2005-11-08 | ||
| JP2006-283893 | 2006-10-18 | ||
| JP2006283893A JP4560505B2 (ja) | 2005-11-08 | 2006-10-18 | 電界効果型トランジスタ |
| PCT/JP2006/322327 WO2007055256A1 (en) | 2005-11-08 | 2006-11-01 | Amorphous oxide field-effect transistor having crystalline region at the semiconductor/dielectric interface |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BRPI0618329A2 true BRPI0618329A2 (pt) | 2012-05-08 |
Family
ID=37607109
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BRPI0618329-8A BRPI0618329A2 (pt) | 2005-11-08 | 2006-11-01 | transistor de efeito de campo |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US7851792B2 (OSRAM) |
| EP (1) | EP1946383A1 (OSRAM) |
| JP (1) | JP4560505B2 (OSRAM) |
| KR (1) | KR100995520B1 (OSRAM) |
| CN (1) | CN101305468B (OSRAM) |
| BR (1) | BRPI0618329A2 (OSRAM) |
| RU (1) | RU2390072C2 (OSRAM) |
| TW (1) | TWI328288B (OSRAM) |
| WO (1) | WO2007055256A1 (OSRAM) |
Families Citing this family (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100998527B1 (ko) | 2004-11-10 | 2010-12-07 | 고쿠리츠다이가쿠호진 토쿄고교 다이가꾸 | 비정질 산화물 및 전계 효과 트랜지스터 |
| JP5305630B2 (ja) | 2006-12-05 | 2013-10-02 | キヤノン株式会社 | ボトムゲート型薄膜トランジスタの製造方法及び表示装置の製造方法 |
| JP5354862B2 (ja) * | 2007-02-19 | 2013-11-27 | キヤノン株式会社 | アモルファス絶縁体膜及び薄膜トランジスタ |
| KR101252904B1 (ko) | 2007-09-06 | 2013-04-09 | 캐논 가부시끼가이샤 | 리튬 이온 축적·방출 재료의 제조 방법, 리튬 이온 축적·방출 재료 및 상기 재료를 사용한 전극 구조체 및 축전 디바이스 |
| JP5213421B2 (ja) * | 2007-12-04 | 2013-06-19 | キヤノン株式会社 | 酸化物半導体薄膜トランジスタ |
| US9082857B2 (en) | 2008-09-01 | 2015-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising an oxide semiconductor layer |
| WO2010038596A1 (en) * | 2008-10-03 | 2010-04-08 | Semiconductor Energy Laboratory Co., Ltd. | Modulation circuit and semiconductor device including the same |
| TWI502739B (zh) * | 2008-11-13 | 2015-10-01 | Semiconductor Energy Lab | 半導體裝置及其製造方法 |
| JP2010153802A (ja) | 2008-11-20 | 2010-07-08 | Semiconductor Energy Lab Co Ltd | 半導体装置及び半導体装置の作製方法 |
| KR101519893B1 (ko) * | 2009-09-16 | 2015-05-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 트랜지스터 |
| TWI512997B (zh) * | 2009-09-24 | 2015-12-11 | Semiconductor Energy Lab | 半導體裝置，電源電路，和半導體裝置的製造方法 |
| SG178056A1 (en) * | 2009-10-08 | 2012-03-29 | Semiconductor Energy Lab | Oxide semiconductor layer and semiconductor device |
| KR101396096B1 (ko) * | 2009-10-09 | 2014-05-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
| KR101932407B1 (ko) | 2009-11-06 | 2018-12-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| KR101893332B1 (ko) | 2009-11-13 | 2018-08-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 구동 방법 |
| WO2011062041A1 (en) | 2009-11-20 | 2011-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Transistor |
| WO2011062057A1 (en) | 2009-11-20 | 2011-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR101708607B1 (ko) * | 2009-11-20 | 2017-02-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| CN102648490B (zh) | 2009-11-30 | 2016-08-17 | 株式会社半导体能源研究所 | 液晶显示设备、用于驱动该液晶显示设备的方法、以及包括该液晶显示设备的电子设备 |
| CN102648526B (zh) | 2009-12-04 | 2015-08-05 | 株式会社半导体能源研究所 | 半导体器件及其制造方法 |
| KR101773641B1 (ko) | 2010-01-22 | 2017-09-12 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| JP5923248B2 (ja) * | 2010-05-20 | 2016-05-24 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US8987728B2 (en) * | 2011-03-25 | 2015-03-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing semiconductor device |
| JP6023453B2 (ja) * | 2011-04-15 | 2016-11-09 | 株式会社半導体エネルギー研究所 | 記憶装置 |
| JP6006572B2 (ja) * | 2011-08-18 | 2016-10-12 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP5832399B2 (ja) | 2011-09-16 | 2015-12-16 | 株式会社半導体エネルギー研究所 | 発光装置 |
| SG11201505088UA (en) | 2011-09-29 | 2015-08-28 | Semiconductor Energy Lab | Semiconductor device |
| US9057126B2 (en) * | 2011-11-29 | 2015-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing sputtering target and method for manufacturing semiconductor device |
| US20150329371A1 (en) * | 2014-05-13 | 2015-11-19 | Semiconductor Energy Laboratory Co., Ltd. | Oxide, semiconductor device, module, and electronic device |
| RU168641U1 (ru) * | 2016-01-26 | 2017-02-13 | Акционерное общество "Научно-исследовательский институт полупроводниковых приборов" (АО "НИИПП") | Конструкция высокочастотного полевого транзистора с дополнительным полевым электродом |
| RU2706296C1 (ru) * | 2016-03-18 | 2019-11-15 | Рикох Компани, Лтд. | Способ изготовления полевого транзистора |
Family Cites Families (28)
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|---|---|---|---|---|
| JPS6187371A (ja) * | 1984-10-05 | 1986-05-02 | Hitachi Ltd | 薄膜半導体装置 |
| US5849601A (en) | 1990-12-25 | 1998-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method for manufacturing the same |
| EP0535979A3 (en) | 1991-10-02 | 1993-07-21 | Sharp Kabushiki Kaisha | A thin film transistor and a method for producing the same |
| JPH0595002A (ja) | 1991-10-02 | 1993-04-16 | Sharp Corp | 薄膜トランジスタ |
| RU2069417C1 (ru) * | 1994-06-08 | 1996-11-20 | Акционерное общество открытого типа "Научно-исследовательский институт молекулярной электроники и завод "Микрон" | Способ изготовления тонкопленочных транзисторов матриц жидкокристаллических экранов |
| US6172296B1 (en) | 1996-05-17 | 2001-01-09 | Canon Kabushiki Kaisha | Photovoltaic cell |
| US6123824A (en) | 1996-12-13 | 2000-09-26 | Canon Kabushiki Kaisha | Process for producing photo-electricity generating device |
| JPH1146006A (ja) | 1997-07-25 | 1999-02-16 | Canon Inc | 光起電力素子およびその製造方法 |
| JPH11233801A (ja) | 1998-02-17 | 1999-08-27 | Canon Inc | 微結晶シリコン膜の形成方法、および光起電力素子 |
| JP4208281B2 (ja) | 1998-02-26 | 2009-01-14 | キヤノン株式会社 | 積層型光起電力素子 |
| US6303945B1 (en) | 1998-03-16 | 2001-10-16 | Canon Kabushiki Kaisha | Semiconductor element having microcrystalline semiconductor material |
| US6344608B2 (en) | 1998-06-30 | 2002-02-05 | Canon Kabushiki Kaisha | Photovoltaic element |
| US6472248B2 (en) | 1999-07-04 | 2002-10-29 | Canon Kabushiki Kaisha | Microcrystalline series photovoltaic element and process for fabrication of same |
| JP2002134772A (ja) | 2000-10-24 | 2002-05-10 | Canon Inc | シリコン系薄膜及び光起電力素子 |
| JP2002206168A (ja) | 2000-10-24 | 2002-07-26 | Canon Inc | シリコン系薄膜の形成方法、シリコン系半導体層の形成方法及び光起電力素子 |
| JP2002305315A (ja) | 2001-01-31 | 2002-10-18 | Canon Inc | 半導体素子の形成方法及び半導体素子 |
| US6706336B2 (en) | 2001-02-02 | 2004-03-16 | Canon Kabushiki Kaisha | Silicon-based film, formation method therefor and photovoltaic element |
| US6858308B2 (en) | 2001-03-12 | 2005-02-22 | Canon Kabushiki Kaisha | Semiconductor element, and method of forming silicon-based film |
| JP2003007629A (ja) | 2001-04-03 | 2003-01-10 | Canon Inc | シリコン系膜の形成方法、シリコン系膜および半導体素子 |
| US7339187B2 (en) | 2002-05-21 | 2008-03-04 | State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University | Transistor structures |
| JP2004335823A (ja) | 2003-05-09 | 2004-11-25 | Canon Inc | 光起電力素子及び光起電力素子の形成方法 |
| JP4108633B2 (ja) * | 2003-06-20 | 2008-06-25 | シャープ株式会社 | 薄膜トランジスタおよびその製造方法ならびに電子デバイス |
| US20050017244A1 (en) | 2003-07-25 | 2005-01-27 | Randy Hoffman | Semiconductor device |
| KR100975523B1 (ko) * | 2003-12-30 | 2010-08-13 | 삼성전자주식회사 | 조절된 이동도를 가지는 반도체 소자 및 이를 적용한 ｔｆｔ |
| CN1998087B (zh) * | 2004-03-12 | 2014-12-31 | 独立行政法人科学技术振兴机构 | 非晶形氧化物和薄膜晶体管 |
| CN1564324A (zh) * | 2004-03-31 | 2005-01-12 | 浙江大学 | 一种ZnO基透明薄膜晶体管及其制备方法 |
| KR100998527B1 (ko) | 2004-11-10 | 2010-12-07 | 고쿠리츠다이가쿠호진 토쿄고교 다이가꾸 | 비정질 산화물 및 전계 효과 트랜지스터 |
| JP5037808B2 (ja) | 2005-10-20 | 2012-10-03 | キヤノン株式会社 | アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置 |
-
2006
- 2006-10-18 JP JP2006283893A patent/JP4560505B2/ja not_active Expired - Fee Related
- 2006-11-01 BR BRPI0618329-8A patent/BRPI0618329A2/pt not_active Application Discontinuation
- 2006-11-01 CN CN2006800415569A patent/CN101305468B/zh not_active Expired - Fee Related
- 2006-11-01 KR KR1020087013298A patent/KR100995520B1/ko not_active Expired - Fee Related
- 2006-11-01 RU RU2008122971/28A patent/RU2390072C2/ru not_active IP Right Cessation
- 2006-11-01 WO PCT/JP2006/322327 patent/WO2007055256A1/en not_active Ceased
- 2006-11-01 EP EP06823223A patent/EP1946383A1/en not_active Withdrawn
- 2006-11-01 US US12/089,907 patent/US7851792B2/en not_active Expired - Fee Related
- 2006-11-03 TW TW095140809A patent/TWI328288B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| CN101305468B (zh) | 2011-01-05 |
| TWI328288B (en) | 2010-08-01 |
| TW200737525A (en) | 2007-10-01 |
| JP2007158307A (ja) | 2007-06-21 |
| US7851792B2 (en) | 2010-12-14 |
| WO2007055256A1 (en) | 2007-05-18 |
| JP4560505B2 (ja) | 2010-10-13 |
| US20090272970A1 (en) | 2009-11-05 |
| KR20080074931A (ko) | 2008-08-13 |
| RU2008122971A (ru) | 2009-12-20 |
| RU2390072C2 (ru) | 2010-05-20 |
| CN101305468A (zh) | 2008-11-12 |
| EP1946383A1 (en) | 2008-07-23 |
| KR100995520B1 (ko) | 2010-11-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| B06G | Technical and formal requirements: other requirements [chapter 6.7 patent gazette] |
Free format text: SOLICITA-SE A REGULARIZACAO DA PROCURACAO, UMA VEZ QUE BASEADO NO ARTIGO 216 1O DA LPI, O DOCUMENTO DE PROCURACAO DEVE SER APRESENTADO NO ORIGINAL, TRASLADO OU FOTOCOPIA AUTENTICADA. |
|
| B07A | Application suspended after technical examination (opinion) [chapter 7.1 patent gazette] | ||
| B10A | Cessation: cessation confirmed |