BR8903449A - Transistor bipolar,metodo para sua fabricacao e estrutura de transistor bipolar - Google Patents

Transistor bipolar,metodo para sua fabricacao e estrutura de transistor bipolar

Info

Publication number
BR8903449A
BR8903449A BR898903449A BR8903449A BR8903449A BR 8903449 A BR8903449 A BR 8903449A BR 898903449 A BR898903449 A BR 898903449A BR 8903449 A BR8903449 A BR 8903449A BR 8903449 A BR8903449 A BR 8903449A
Authority
BR
Brazil
Prior art keywords
bipolar transistor
manufacture
transistor structure
bipolar
transistor
Prior art date
Application number
BR898903449A
Other languages
English (en)
Inventor
Joachim Norbert Burghartz
Barry Jack Ginsberg
Siegfried R Mader
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of BR8903449A publication Critical patent/BR8903449A/pt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66272—Silicon vertical transistors
    • H01L29/66287—Silicon vertical transistors with a single crystalline emitter, collector or base including extrinsic, link or graft base formed on the silicon substrate, e.g. by epitaxy, recrystallisation, after insulating device isolation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H01L29/7325—Vertical transistors having an emitter-base junction leaving at a main surface and a base-collector junction leaving at a peripheral surface of the body, e.g. mesa planar transistor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/011—Bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
BR898903449A 1988-07-14 1989-07-13 Transistor bipolar,metodo para sua fabricacao e estrutura de transistor bipolar BR8903449A (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/219,020 US5059544A (en) 1988-07-14 1988-07-14 Method of forming bipolar transistor having self-aligned emitter-base using selective and non-selective epitaxy

Publications (1)

Publication Number Publication Date
BR8903449A true BR8903449A (pt) 1990-03-06

Family

ID=22817480

Family Applications (1)

Application Number Title Priority Date Filing Date
BR898903449A BR8903449A (pt) 1988-07-14 1989-07-13 Transistor bipolar,metodo para sua fabricacao e estrutura de transistor bipolar

Country Status (6)

Country Link
US (1) US5059544A (pt)
EP (1) EP0350610A3 (pt)
JP (1) JPH0695524B2 (pt)
AR (1) AR247041A1 (pt)
BR (1) BR8903449A (pt)
CA (1) CA1311859C (pt)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5227317A (en) * 1989-04-21 1993-07-13 Hitachi, Ltd. Method of manufacturing semiconductor integrated circuit bipolar transistor device
JPH02280340A (ja) * 1989-04-21 1990-11-16 Hitachi Ltd 半導体集積回路装置の製造方法
US5296388A (en) * 1990-07-13 1994-03-22 Matsushita Electric Industrial Co., Ltd. Fabrication method for semiconductor devices
US5213989A (en) * 1992-06-24 1993-05-25 Motorola, Inc. Method for forming a grown bipolar electrode contact using a sidewall seed
JP2740087B2 (ja) * 1992-08-15 1998-04-15 株式会社東芝 半導体集積回路装置の製造方法
US5557131A (en) * 1992-10-19 1996-09-17 At&T Global Information Solutions Company Elevated emitter for double poly BICMOS devices
US5266505A (en) * 1992-12-22 1993-11-30 International Business Machines Corporation Image reversal process for self-aligned implants in planar epitaxial-base bipolar transistors
JP3172031B2 (ja) * 1994-03-15 2001-06-04 株式会社東芝 半導体装置の製造方法
US5554562A (en) * 1995-04-06 1996-09-10 Advanced Micro Devices, Inc. Advanced isolation scheme for deep submicron technology
US6020246A (en) 1998-03-13 2000-02-01 National Semiconductor Corporation Forming a self-aligned epitaxial base bipolar transistor
FR2778022B1 (fr) * 1998-04-22 2001-07-13 France Telecom Transistor bibolaire vertical, en particulier a base a heterojonction sige, et procede de fabrication
US6444536B2 (en) * 1999-07-08 2002-09-03 Agere Systems Guardian Corp. Method for fabricating bipolar transistors
DE10160509A1 (de) * 2001-11-30 2003-06-12 Ihp Gmbh Halbleitervorrichtung und Verfahren zu ihrer Herstellung
KR20040038511A (ko) * 2002-11-01 2004-05-08 한국전자통신연구원 자기정렬형 이종접합 쌍극자 트랜지스터 및 그의 제조 방법
US6998305B2 (en) * 2003-01-24 2006-02-14 Asm America, Inc. Enhanced selectivity for epitaxial deposition
JP2004356254A (ja) * 2003-05-28 2004-12-16 Sony Corp 半導体装置、及び同半導体装置の製造方法
TW200518341A (en) * 2003-09-30 2005-06-01 Agere Systems Inc Bipolar transistor with selectively deposited emitter
US7372091B2 (en) * 2004-01-27 2008-05-13 Micron Technology, Inc. Selective epitaxy vertical integrated circuit components
US7265018B2 (en) * 2004-09-21 2007-09-04 International Business Machines Corporation Method to build self-aligned NPN in advanced BiCMOS technology
US7504685B2 (en) 2005-06-28 2009-03-17 Micron Technology, Inc. Oxide epitaxial isolation
US7375413B2 (en) * 2006-05-26 2008-05-20 International Business Machines Corporation Trench widening without merging
US8278176B2 (en) 2006-06-07 2012-10-02 Asm America, Inc. Selective epitaxial formation of semiconductor films
US7687887B1 (en) 2006-12-01 2010-03-30 National Semiconductor Corporation Method of forming a self-aligned bipolar transistor structure using a selectively grown emitter
US7759199B2 (en) 2007-09-19 2010-07-20 Asm America, Inc. Stressor for engineered strain on channel
US8367528B2 (en) 2009-11-17 2013-02-05 Asm America, Inc. Cyclical epitaxial deposition and etch
US8809170B2 (en) 2011-05-19 2014-08-19 Asm America Inc. High throughput cyclical epitaxial deposition and etch process
US9356097B2 (en) 2013-06-25 2016-05-31 Globalfoundries Inc. Method of forming a bipolar transistor with maskless self-aligned emitter
CN109887996B (zh) * 2019-01-31 2022-03-08 上海华虹宏力半导体制造有限公司 自对准锗硅hbt器件的制造方法
US11588043B2 (en) 2021-04-14 2023-02-21 Globalfoundries U.S. Inc. Bipolar transistor with elevated extrinsic base and methods to form same
US20230197787A1 (en) * 2021-12-22 2023-06-22 Globalfoundries Singapore Pte. Ltd. Bipolar transistors

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1061506A (en) * 1965-03-31 1967-03-15 Ibm Method of forming a semiconductor device and device so made
JPS5244173A (en) * 1975-10-06 1977-04-06 Hitachi Ltd Method of flat etching of silicon substrate
US4004954A (en) * 1976-02-25 1977-01-25 Rca Corporation Method of selective growth of microcrystalline silicon
JPS5539677A (en) * 1978-09-14 1980-03-19 Chiyou Lsi Gijutsu Kenkyu Kumiai Semiconductor device and its manufacturing
US4236294A (en) * 1979-03-16 1980-12-02 International Business Machines Corporation High performance bipolar device and method for making same
JPS55128869A (en) * 1979-03-26 1980-10-06 Mitsubishi Electric Corp Semiconductor device and method of fabricating the same
US4324814A (en) * 1981-03-19 1982-04-13 Rca Corporation Method for forming a narrow thin film line
US4483726A (en) * 1981-06-30 1984-11-20 International Business Machines Corporation Double self-aligned fabrication process for making a bipolar transistor structure having a small polysilicon-to-extrinsic base contact area
JPS5856320A (ja) * 1981-09-29 1983-04-04 Nec Corp 気相成長方法
JPS5889863A (ja) * 1981-11-24 1983-05-28 Hitachi Ltd 半導体装置の製造方法
US4462847A (en) * 1982-06-21 1984-07-31 Texas Instruments Incorporated Fabrication of dielectrically isolated microelectronic semiconductor circuits utilizing selective growth by low pressure vapor deposition
US4545114A (en) * 1982-09-30 1985-10-08 Fujitsu Limited Method of producing semiconductor device
JPS5984469A (ja) * 1982-11-04 1984-05-16 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
US4507158A (en) * 1983-08-12 1985-03-26 Hewlett-Packard Co. Trench isolated transistors in semiconductor films
US4522662A (en) * 1983-08-12 1985-06-11 Hewlett-Packard Company CVD lateral epitaxial growth of silicon over insulators
US4578142A (en) * 1984-05-10 1986-03-25 Rca Corporation Method for growing monocrystalline silicon through mask layer
US4640721A (en) * 1984-06-06 1987-02-03 Hitachi, Ltd. Method of forming bipolar transistors with graft base regions
JPS6146063A (ja) * 1984-08-10 1986-03-06 Hitachi Ltd 半導体装置の製造方法
JPS6298770A (ja) * 1985-10-25 1987-05-08 Sony Corp 半導体装置の製造方法
JPS6318673A (ja) * 1986-07-11 1988-01-26 Yamaha Corp 半導体装置の製法
US4818713A (en) * 1987-10-20 1989-04-04 American Telephone And Telegraph Company, At&T Bell Laboratories Techniques useful in fabricating semiconductor devices having submicron features

Also Published As

Publication number Publication date
CA1311859C (en) 1992-12-22
US5059544A (en) 1991-10-22
JPH0695524B2 (ja) 1994-11-24
EP0350610A2 (en) 1990-01-17
AR247041A1 (es) 1994-10-31
JPH0240923A (ja) 1990-02-09
EP0350610A3 (en) 1990-08-08

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Legal Events

Date Code Title Description
FD3 Appl. lapsed due to non-payment of renewal fee