BR112018015422A2 - transistor de efeito de campo, método para fabricar o mesmo, elemento de exibição, dispositivo de exibição e sistema - Google Patents
transistor de efeito de campo, método para fabricar o mesmo, elemento de exibição, dispositivo de exibição e sistemaInfo
- Publication number
- BR112018015422A2 BR112018015422A2 BR112018015422-9A BR112018015422A BR112018015422A2 BR 112018015422 A2 BR112018015422 A2 BR 112018015422A2 BR 112018015422 A BR112018015422 A BR 112018015422A BR 112018015422 A2 BR112018015422 A2 BR 112018015422A2
- Authority
- BR
- Brazil
- Prior art keywords
- conductive film
- field effect
- effect transistor
- recording
- making
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000009413 insulation Methods 0.000 abstract 3
- 239000012670 alkaline solution Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 abstract 1
- 150000001342 alkaline earth metals Chemical class 0.000 abstract 1
- 229910052747 lanthanoid Inorganic materials 0.000 abstract 1
- 150000002602 lanthanoids Chemical class 0.000 abstract 1
- 239000000243 solution Substances 0.000 abstract 1
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- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Optics & Photonics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geometry (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electroluminescent Light Sources (AREA)
- Electrodes Of Semiconductors (AREA)
- Liquid Crystal (AREA)
Abstract
um método é fornecido para fabricar um transistor de efeito de campo que inclui uma camada de isolamento de porta e um eletrodo incluindo uma primeira película condutora e uma segunda película condutora sucessivamente laminadas sobre uma superfície predeterminada da camada de isolamento de porta. o método inclui as etapas de formar uma película de óxido incluindo elemento a, que é um metal alcalino terroso e um elemento b, que é pelo menos um dentre ga, sc, y e um lantanídeo, como a camada de isolamento de porta; formar uma primeira película condutora que dissolve em uma solução alcalina orgânica sobre a película de óxido; formar uma segunda película condutora sobre a primeira película condutora; gravar a segunda película condutora com uma solução de gravação tendo uma taxa de gravação mais elevada para a segunda película condutora quando comparada com aquela para a primeira película condutora; e gravar a primeira película condutora com a solução alcalina orgânica usando a segunda película condutora como uma máscara.
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
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JP2016-017556 | 2016-02-01 | ||
JP2016017556 | 2016-02-01 | ||
JP2016-112946 | 2016-06-06 | ||
JP2016112375 | 2016-06-06 | ||
JP2016112946 | 2016-06-06 | ||
JP2016-112375 | 2016-06-06 | ||
PCT/JP2017/001458 WO2017135029A1 (ja) | 2016-02-01 | 2017-01-18 | 電界効果型トランジスタ及びその製造方法、表示素子、表示装置、システム |
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BR112018015422A2 true BR112018015422A2 (pt) | 2018-12-18 |
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BR112018015422-9A BR112018015422A2 (pt) | 2016-02-01 | 2017-01-18 | transistor de efeito de campo, método para fabricar o mesmo, elemento de exibição, dispositivo de exibição e sistema |
Country Status (10)
Country | Link |
---|---|
US (1) | US10748784B2 (pt) |
EP (1) | EP3432348A4 (pt) |
JP (1) | JP6562089B2 (pt) |
KR (1) | KR102142038B1 (pt) |
CN (1) | CN108496243A (pt) |
BR (1) | BR112018015422A2 (pt) |
RU (1) | RU2692401C1 (pt) |
SG (1) | SG11201806226WA (pt) |
TW (2) | TWI634377B (pt) |
WO (1) | WO2017135029A1 (pt) |
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DE102017113563A1 (de) | 2017-06-20 | 2018-12-20 | Ipgate Ag | Bremssystem |
JP2019161182A (ja) * | 2018-03-16 | 2019-09-19 | 株式会社リコー | 電界効果型トランジスタ及びその製造方法、表示素子、表示装置、システム |
JP7143601B2 (ja) * | 2018-03-16 | 2022-09-29 | 株式会社リコー | 電界効果型トランジスタ、表示素子、画像表示装置、及びシステム |
JP7056274B2 (ja) * | 2018-03-19 | 2022-04-19 | 株式会社リコー | 電界効果型トランジスタの製造方法 |
US11342447B2 (en) | 2018-11-30 | 2022-05-24 | Ricoh Company, Ltd. | Sputtering target for insulating oxide film, method for forming insulating oxide film, and method for producing field-effect transistor |
CN109727920B (zh) * | 2018-12-18 | 2020-10-30 | 武汉华星光电半导体显示技术有限公司 | Tft基板的制作方法及tft基板 |
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JPH04217370A (ja) * | 1990-12-19 | 1992-08-07 | Seikosha Co Ltd | 薄膜トランジスタのゲ−ト電極およびその製造方法 |
JP3949639B2 (ja) * | 1993-09-07 | 2007-07-25 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
RU2130668C1 (ru) * | 1994-09-30 | 1999-05-20 | Акционерное общество закрытого типа "VL" | Полевой транзистор типа металл - диэлектрик-полупроводник |
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JP6394171B2 (ja) | 2013-10-30 | 2018-09-26 | 株式会社リコー | 電界効果型トランジスタ、表示素子、画像表示装置、及びシステム |
JP6651714B2 (ja) | 2014-07-11 | 2020-02-19 | 株式会社リコー | n型酸化物半導体製造用塗布液、電界効果型トランジスタ、表示素子、画像表示装置、及びシステム |
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-
2017
- 2017-01-18 KR KR1020187021852A patent/KR102142038B1/ko active IP Right Grant
- 2017-01-18 WO PCT/JP2017/001458 patent/WO2017135029A1/ja active Application Filing
- 2017-01-18 BR BR112018015422-9A patent/BR112018015422A2/pt not_active IP Right Cessation
- 2017-01-18 SG SG11201806226WA patent/SG11201806226WA/en unknown
- 2017-01-18 CN CN201780008233.8A patent/CN108496243A/zh active Pending
- 2017-01-18 RU RU2018127015A patent/RU2692401C1/ru active
- 2017-01-18 EP EP17747190.1A patent/EP3432348A4/en not_active Withdrawn
- 2017-01-18 JP JP2017565460A patent/JP6562089B2/ja not_active Expired - Fee Related
- 2017-01-20 TW TW106102167A patent/TWI634377B/zh not_active IP Right Cessation
- 2017-01-20 TW TW107122614A patent/TWI687750B/zh not_active IP Right Cessation
-
2018
- 2018-07-27 US US16/047,374 patent/US10748784B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
TWI687750B (zh) | 2020-03-11 |
SG11201806226WA (en) | 2018-08-30 |
US10748784B2 (en) | 2020-08-18 |
KR20180098647A (ko) | 2018-09-04 |
WO2017135029A1 (ja) | 2017-08-10 |
KR102142038B1 (ko) | 2020-09-14 |
CN108496243A (zh) | 2018-09-04 |
EP3432348A1 (en) | 2019-01-23 |
TW201837576A (zh) | 2018-10-16 |
JP6562089B2 (ja) | 2019-08-21 |
JPWO2017135029A1 (ja) | 2018-12-06 |
TWI634377B (zh) | 2018-09-01 |
RU2692401C1 (ru) | 2019-06-24 |
TW201809841A (zh) | 2018-03-16 |
EP3432348A4 (en) | 2019-03-20 |
US20180358236A1 (en) | 2018-12-13 |
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