BR112018004937A2 - estrutura de varactor simétrico acoplada ao lado traseiro - Google Patents

estrutura de varactor simétrico acoplada ao lado traseiro

Info

Publication number
BR112018004937A2
BR112018004937A2 BR112018004937A BR112018004937A BR112018004937A2 BR 112018004937 A2 BR112018004937 A2 BR 112018004937A2 BR 112018004937 A BR112018004937 A BR 112018004937A BR 112018004937 A BR112018004937 A BR 112018004937A BR 112018004937 A2 BR112018004937 A2 BR 112018004937A2
Authority
BR
Brazil
Prior art keywords
varactor
rear side
symmetrical
component
varactor component
Prior art date
Application number
BR112018004937A
Other languages
English (en)
Other versions
BR112018004937B1 (pt
Inventor
Hobie Yun Changhan
Daniel Kim Daeik
Francis Berdy David
Jeffrey Lan Je-Hsiung
Kim Jonghae
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of BR112018004937A2 publication Critical patent/BR112018004937A2/pt
Publication of BR112018004937B1 publication Critical patent/BR112018004937B1/pt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0805—Capacitors only
    • H01L27/0808—Varactor diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/66174—Capacitors with PN or Schottky junction, e.g. varactors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/66181—Conductor-insulator-semiconductor capacitors, e.g. trench capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/93—Variable capacitance diodes, e.g. varactors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)

Abstract

uma estrutura de varactor simétrico pode incluir um primeiro componente de varactor. o primeiro componente de varactor pode incluir uma comporta operando como uma segunda placa, uma camada de óxido de comporta operando como uma camada dielétrica e um corpo operando como uma primeira placa de um capacitor de modulação de área. além disso, regiões dopadas podem circundar o corpo do primeiro componente de varactor. o primeiro componente de varactor pode ser sustentado em um lado traseiro por uma camada de isolamento. a estrutura de varactor simétrico pode incluir também um segundo componente de varactor eletricamente acoplado ao lado traseiro do primeiro componente de varactor através de uma camada condutiva traseira.
BR112018004937-9A 2015-09-14 2016-08-01 Estrutura de varactor simétrico e método para fabricar uma estrutura de varactor simétrico BR112018004937B1 (pt)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/853,931 2015-09-14
US14/853,931 US9502586B1 (en) 2015-09-14 2015-09-14 Backside coupled symmetric varactor structure
PCT/US2016/045056 WO2017048384A1 (en) 2015-09-14 2016-08-01 Backside coupled symmetric varactor structure

Publications (2)

Publication Number Publication Date
BR112018004937A2 true BR112018004937A2 (pt) 2018-10-09
BR112018004937B1 BR112018004937B1 (pt) 2023-10-10

Family

ID=56694232

Family Applications (1)

Application Number Title Priority Date Filing Date
BR112018004937-9A BR112018004937B1 (pt) 2015-09-14 2016-08-01 Estrutura de varactor simétrico e método para fabricar uma estrutura de varactor simétrico

Country Status (9)

Country Link
US (2) US9502586B1 (pt)
EP (1) EP3350838B1 (pt)
JP (1) JP6396624B1 (pt)
KR (1) KR101941533B1 (pt)
CN (1) CN108028269B (pt)
BR (1) BR112018004937B1 (pt)
CA (1) CA2994820A1 (pt)
TW (1) TWI583007B (pt)
WO (1) WO2017048384A1 (pt)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9502586B1 (en) 2015-09-14 2016-11-22 Qualcomm Incorporated Backside coupled symmetric varactor structure
US9882066B1 (en) * 2017-02-10 2018-01-30 Qualcomm Incorporated Transcap manufacturing techniques without a silicide-blocking mask
US10707330B2 (en) 2018-02-15 2020-07-07 Globalfoundries Inc. Semiconductor device with interconnect to source/drain
US10608124B2 (en) 2018-04-19 2020-03-31 Qualcomm Incorporated Back silicided variable capacitor devices
US10636872B1 (en) * 2018-10-31 2020-04-28 Globalfoundries Inc. Apparatus and method to prevent integrated circuit from entering latch-up mode
US11515197B2 (en) * 2019-07-11 2022-11-29 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device and method of forming the semiconductor device
US11658220B2 (en) 2020-04-24 2023-05-23 Taiwan Semiconductor Manufacturing Company, Ltd. Drain side recess for back-side power rail device
US11581224B2 (en) 2020-05-08 2023-02-14 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming long channel back-side power rail device
US11791342B2 (en) 2021-11-17 2023-10-17 International Business Machines Corporation Varactor integrated with complementary metal-oxide semiconductor devices

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3877053A (en) 1973-05-07 1975-04-08 Gen Motors Corp Voltage controlled variable area solid state tuning capacitor
JP3167457B2 (ja) * 1992-10-22 2001-05-21 株式会社東芝 半導体装置
TW540154B (en) * 2001-06-04 2003-07-01 Promos Technologies Inc Deep trench capacitor structure and its manufacturing method
US7235862B2 (en) * 2001-07-10 2007-06-26 National Semiconductor Corporation Gate-enhanced junction varactor
JP5000055B2 (ja) * 2001-09-19 2012-08-15 ルネサスエレクトロニクス株式会社 半導体装置
JP2004214408A (ja) * 2002-12-27 2004-07-29 Nec Electronics Corp 電圧制御可変容量素子
US6847095B2 (en) * 2003-04-01 2005-01-25 Texas Instruments Incorporated Variable reactor (varactor) with engineered capacitance-voltage characteristics
KR100593444B1 (ko) * 2004-02-12 2006-06-28 삼성전자주식회사 모오스 바렉터를 갖는 반도체소자 및 그것을 제조하는 방법
JP4867915B2 (ja) * 2005-02-16 2012-02-01 株式会社日立製作所 電子タグチップ
US7276751B2 (en) * 2005-09-09 2007-10-02 International Business Machines Corporation Trench metal-insulator-metal (MIM) capacitors integrated with middle-of-line metal contacts, and method of fabricating same
JP2007336254A (ja) * 2006-06-15 2007-12-27 Oki Electric Ind Co Ltd 電圧制御発振器
US7816231B2 (en) * 2006-08-29 2010-10-19 International Business Machines Corporation Device structures including backside contacts, and methods for forming same
JP5261929B2 (ja) * 2006-12-15 2013-08-14 株式会社デンソー 半導体装置
JP2009064860A (ja) * 2007-09-05 2009-03-26 Renesas Technology Corp 半導体装置
KR101246348B1 (ko) * 2009-03-27 2013-03-25 고려대학교 산학협력단 모스 버랙터 제조방법
JP2010251426A (ja) 2009-04-13 2010-11-04 Sony Corp 可変容量素子及び電子機器
US8188528B2 (en) * 2009-05-07 2012-05-29 International Buiness Machines Corporation Structure and method to form EDRAM on SOI substrate
US8604586B2 (en) * 2009-08-06 2013-12-10 Qualcomm Incorporated High breakdown voltage embedded MIM capacitor structure
US9059319B2 (en) * 2010-01-25 2015-06-16 International Business Machines Corporation Embedded dynamic random access memory device and method
US8273616B2 (en) 2010-02-19 2012-09-25 Taiwan Semiconductor Manufacturing Company, Ltd. Gated-varactors
US8450827B2 (en) 2011-01-25 2013-05-28 Taiwan Semiconductor Manufacturing Company, Ltd. MOS varactor structure and methods
US8803288B1 (en) * 2011-05-05 2014-08-12 Eta Semiconductor Inc. Analog transcap device
JP2012015538A (ja) * 2011-08-29 2012-01-19 Renesas Electronics Corp 半導体装置
US20130100090A1 (en) * 2011-10-21 2013-04-25 Qualcomm Mems Technologies, Inc. Electromechanical systems variable capacitance device
CN103545245B (zh) * 2012-07-10 2016-04-20 中芯国际集成电路制造(上海)有限公司 半导体结构的形成方法及处理方法
EP2693478B1 (en) 2012-07-31 2019-05-29 Nxp B.V. An integrated circuit based varactor
US9570222B2 (en) * 2013-05-28 2017-02-14 Tdk Corporation Vector inductor having multiple mutually coupled metalization layers providing high quality factor
JP5596819B2 (ja) * 2013-06-11 2014-09-24 ルネサスエレクトロニクス株式会社 半導体集積回路装置
US9502586B1 (en) 2015-09-14 2016-11-22 Qualcomm Incorporated Backside coupled symmetric varactor structure

Also Published As

Publication number Publication date
KR101941533B1 (ko) 2019-01-24
EP3350838A1 (en) 2018-07-25
EP3350838B1 (en) 2024-04-03
JP6396624B1 (ja) 2018-09-26
US20170077093A1 (en) 2017-03-16
BR112018004937B1 (pt) 2023-10-10
EP3350838C0 (en) 2024-04-03
TWI583007B (zh) 2017-05-11
JP2018530915A (ja) 2018-10-18
WO2017048384A1 (en) 2017-03-23
US9721946B2 (en) 2017-08-01
CN108028269B (zh) 2019-06-28
CA2994820A1 (en) 2017-03-23
CN108028269A (zh) 2018-05-11
TW201712880A (zh) 2017-04-01
US9502586B1 (en) 2016-11-22
KR20180041258A (ko) 2018-04-23

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Legal Events

Date Code Title Description
B06U Preliminary requirement: requests with searches performed by other patent offices: procedure suspended [chapter 6.21 patent gazette]
B07A Application suspended after technical examination (opinion) [chapter 7.1 patent gazette]
B09A Decision: intention to grant [chapter 9.1 patent gazette]
B16A Patent or certificate of addition of invention granted [chapter 16.1 patent gazette]

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