BR112012014143A2 - célula fotovoltaica heterojunção com contato posterior - Google Patents
célula fotovoltaica heterojunção com contato posteriorInfo
- Publication number
- BR112012014143A2 BR112012014143A2 BR112012014143A BR112012014143A BR112012014143A2 BR 112012014143 A2 BR112012014143 A2 BR 112012014143A2 BR 112012014143 A BR112012014143 A BR 112012014143A BR 112012014143 A BR112012014143 A BR 112012014143A BR 112012014143 A2 BR112012014143 A2 BR 112012014143A2
- Authority
- BR
- Brazil
- Prior art keywords
- passivation layer
- substrate
- photovoltaic cell
- disposed
- heterojunction photovoltaic
- Prior art date
Links
- 238000002161 passivation Methods 0.000 abstract 5
- 239000000758 substrate Substances 0.000 abstract 5
- 238000001465 metallisation Methods 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000000370 acceptor Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
"célula fotovoltaica heterojunção com contato posterior". a presente invenção refere-se a um dispositivo semicondutor, compreendendo: um substrato semicondutor cristalino (1), apresentando uma face dianteira (1a) e uma face traseira (1b); uma camada de passivação dianteira (3) disposta sobre a face dianteira (1a) do substrato (1); uma camada de passivação traseira (2) disposta sobre a face traseira (1b) do substrato (1); uma primeira zona de metalização (10) disposta sobre a camada de passivação traseira (2) e adaptada à coleta dos elétrons; uma segunda zona de metalização adaptada à coleta dos orifícios, compreendendo: uma parte de superfície (11), disposta sobre a camada de passivação traseira (2); e um aparte interna (12) que atravessa a camada de passivação traseira (2) e que forma no substrato (1) uma região na qual a concentração em aceitadores de elétrons é superior ao resto do substrato (1). a presente invenção refere-se também a um módulo de célula fotovotaicas utilizando esse dispositivo, assim como um processo de fabricação desse dispositivo.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0958922A FR2953999B1 (fr) | 2009-12-14 | 2009-12-14 | Cellule photovoltaique heterojonction a contact arriere |
PCT/IB2010/055725 WO2011073868A2 (fr) | 2009-12-14 | 2010-12-10 | Cellule photovoltaïque heterojonction a contact arriere |
Publications (2)
Publication Number | Publication Date |
---|---|
BR112012014143A2 true BR112012014143A2 (pt) | 2016-08-16 |
BR112012014143A8 BR112012014143A8 (pt) | 2017-12-26 |
Family
ID=42713403
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BR112012014143A BR112012014143A8 (pt) | 2009-12-14 | 2010-12-10 | Dispositivo semicondutor, módulo de células fotovoltaicas, processo de fabricação de um dispositivo semicondutor e processo de fabricação de um módulo de células fotovoltaicas |
Country Status (12)
Country | Link |
---|---|
US (1) | US20120247539A1 (pt) |
EP (1) | EP2513978B1 (pt) |
JP (1) | JP2013513964A (pt) |
KR (2) | KR20170029652A (pt) |
CN (1) | CN102792455A (pt) |
AU (1) | AU2010331900B2 (pt) |
BR (1) | BR112012014143A8 (pt) |
CA (1) | CA2784491C (pt) |
FR (1) | FR2953999B1 (pt) |
RU (1) | RU2555212C2 (pt) |
WO (1) | WO2011073868A2 (pt) |
ZA (1) | ZA201204008B (pt) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2690666A4 (en) * | 2011-03-25 | 2014-09-03 | Sanyo Electric Co | METHOD FOR PRODUCING A PHOTOELECTRIC CONVERTER ELEMENT |
JP5820989B2 (ja) * | 2011-03-25 | 2015-11-24 | パナソニックIpマネジメント株式会社 | 光電変換素子の製造方法 |
FI20116217A (fi) * | 2011-12-02 | 2013-06-03 | Beneq Oy | Piitä sisältävä n-tyypin aurinkokennopari |
US9202959B2 (en) | 2012-09-25 | 2015-12-01 | International Business Machines Corporation | Embedded junction in hetero-structured back-surface field for photovoltaic devices |
CN103050553B (zh) * | 2012-12-29 | 2015-06-24 | 中国科学院沈阳科学仪器股份有限公司 | 一种双面钝化晶硅太阳能电池及其制备方法 |
US9640699B2 (en) | 2013-02-08 | 2017-05-02 | International Business Machines Corporation | Interdigitated back contact heterojunction photovoltaic device |
US9859455B2 (en) | 2013-02-08 | 2018-01-02 | International Business Machines Corporation | Interdigitated back contact heterojunction photovoltaic device with a floating junction front surface field |
CN103178135B (zh) * | 2013-02-26 | 2015-10-14 | 友达光电股份有限公司 | 太阳能电池及其制作方法 |
CN103746005B (zh) * | 2014-01-17 | 2016-08-17 | 宁波富星太阳能有限公司 | 双层氮化硅减反射膜 |
FR3040822B1 (fr) * | 2015-09-07 | 2018-02-23 | Ecole Polytechnique | Procede de fabrication d'un dispositif a jonction electronique et dispositif associe |
ES2901323T3 (es) * | 2019-07-26 | 2022-03-22 | Meyer Burger Germany Gmbh | Dispositivo fotovoltaico y método para fabricar el mismo |
KR102480841B1 (ko) | 2021-01-21 | 2022-12-23 | 경북대학교 산학협력단 | 광전기화학 셀 및 그의 제조방법 |
CN113963836A (zh) * | 2021-08-29 | 2022-01-21 | 东华理工大学 | 一种基于碳化硅PN结型β辐射伏特效应核电池 |
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US4839312A (en) * | 1978-03-16 | 1989-06-13 | Energy Conversion Devices, Inc. | Fluorinated precursors from which to fabricate amorphous semiconductor material |
US4703553A (en) * | 1986-06-16 | 1987-11-03 | Spectrolab, Inc. | Drive through doping process for manufacturing low back surface recombination solar cells |
US5538564A (en) * | 1994-03-18 | 1996-07-23 | Regents Of The University Of California | Three dimensional amorphous silicon/microcrystalline silicon solar cells |
US5571339A (en) * | 1995-04-17 | 1996-11-05 | The Ohio State Univ. Research Found | Hydrogen passivated heteroepitaxial III-V photovoltaic devices grown on lattice-mismatched substrates, and process |
US5641362A (en) * | 1995-11-22 | 1997-06-24 | Ebara Solar, Inc. | Structure and fabrication process for an aluminum alloy junction self-aligned back contact silicon solar cell |
US6262359B1 (en) * | 1999-03-17 | 2001-07-17 | Ebara Solar, Inc. | Aluminum alloy back junction solar cell and a process for fabrication thereof |
JP2001291881A (ja) | 2000-01-31 | 2001-10-19 | Sanyo Electric Co Ltd | 太陽電池モジュール |
DE10046170A1 (de) * | 2000-09-19 | 2002-04-04 | Fraunhofer Ges Forschung | Verfahren zur Herstellung eines Halbleiter-Metallkontaktes durch eine dielektrische Schicht |
JP2003298078A (ja) | 2002-03-29 | 2003-10-17 | Ebara Corp | 光起電力素子 |
US7335835B2 (en) * | 2002-11-08 | 2008-02-26 | The Boeing Company | Solar cell structure with by-pass diode and wrapped front-side diode interconnection |
DE102004050269A1 (de) | 2004-10-14 | 2006-04-20 | Institut Für Solarenergieforschung Gmbh | Verfahren zur Kontakttrennung elektrisch leitfähiger Schichten auf rückkontaktierten Solarzellen und Solarzelle |
FR2880989B1 (fr) | 2005-01-20 | 2007-03-09 | Commissariat Energie Atomique | Dispositif semi-conducteur a heterojonctions et a structure inter-digitee |
US20070137692A1 (en) * | 2005-12-16 | 2007-06-21 | Bp Corporation North America Inc. | Back-Contact Photovoltaic Cells |
US20070169808A1 (en) | 2006-01-26 | 2007-07-26 | Kherani Nazir P | Solar cell |
US7737357B2 (en) | 2006-05-04 | 2010-06-15 | Sunpower Corporation | Solar cell having doped semiconductor heterojunction contacts |
US20080000522A1 (en) * | 2006-06-30 | 2008-01-03 | General Electric Company | Photovoltaic device which includes all-back-contact configuration; and related processes |
FR2906403B1 (fr) * | 2006-09-21 | 2008-12-19 | Commissariat Energie Atomique | Procede de recuit de cellules photovoltaiques |
DE102006046726A1 (de) * | 2006-10-02 | 2008-04-03 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Solarzelle mit strukturierter Rückseitenpassivierungsschicht aus SIOx und SINx sowie Verfahren zur Herstellung |
JP2009152222A (ja) * | 2006-10-27 | 2009-07-09 | Kyocera Corp | 太陽電池素子の製造方法 |
RU2331139C1 (ru) * | 2007-02-28 | 2008-08-10 | Российская Академия сельскохозяйственных наук Государственное научное учреждение Всероссийский научно-исследовательский институт электрификации сельского хозяйства (ГНУ ВИЭСХ РОССЕЛЬХОЗАКАДЕМИИ) | Фотоэлектрический преобразователь и способ его изготовления (варианты) |
JP2010527146A (ja) * | 2007-05-07 | 2010-08-05 | ジョージア テック リサーチ コーポレイション | スクリーン印刷された局所裏面電界を伴う高品質裏面コンタクトの形成 |
US20090101202A1 (en) * | 2007-10-17 | 2009-04-23 | Industrial Technology Research Institute | Method of fast hydrogen passivation to solar cells made of crystalline silicon |
US20100218821A1 (en) * | 2009-03-02 | 2010-09-02 | Sunyoung Kim | Solar cell and method for manufacturing the same |
KR20120092184A (ko) * | 2009-12-07 | 2012-08-20 | 어플라이드 머티어리얼스, 인코포레이티드 | 도핑된 영역을 세정하고 도핑된 영역 위에 음으로 대전된 패시베이션 층을 형성하는 방법 |
-
2009
- 2009-12-14 FR FR0958922A patent/FR2953999B1/fr active Active
-
2010
- 2010-12-10 KR KR1020177006259A patent/KR20170029652A/ko not_active Application Discontinuation
- 2010-12-10 CA CA2784491A patent/CA2784491C/en active Active
- 2010-12-10 US US13/515,657 patent/US20120247539A1/en not_active Abandoned
- 2010-12-10 WO PCT/IB2010/055725 patent/WO2011073868A2/fr active Application Filing
- 2010-12-10 EP EP10809184.4A patent/EP2513978B1/fr active Active
- 2010-12-10 AU AU2010331900A patent/AU2010331900B2/en active Active
- 2010-12-10 KR KR1020127018378A patent/KR20120094131A/ko active Application Filing
- 2010-12-10 BR BR112012014143A patent/BR112012014143A8/pt active Search and Examination
- 2010-12-10 JP JP2012543955A patent/JP2013513964A/ja active Pending
- 2010-12-10 CN CN2010800638402A patent/CN102792455A/zh active Pending
- 2010-12-10 RU RU2012129993/28A patent/RU2555212C2/ru active
-
2012
- 2012-06-01 ZA ZA201204008A patent/ZA201204008B/en unknown
Also Published As
Publication number | Publication date |
---|---|
AU2010331900B2 (en) | 2015-09-10 |
JP2013513964A (ja) | 2013-04-22 |
FR2953999A1 (fr) | 2011-06-17 |
EP2513978B1 (fr) | 2015-03-25 |
RU2012129993A (ru) | 2014-01-27 |
CA2784491A1 (en) | 2011-06-23 |
EP2513978A2 (fr) | 2012-10-24 |
RU2555212C2 (ru) | 2015-07-10 |
CN102792455A (zh) | 2012-11-21 |
BR112012014143A8 (pt) | 2017-12-26 |
ZA201204008B (en) | 2020-11-25 |
US20120247539A1 (en) | 2012-10-04 |
WO2011073868A3 (fr) | 2011-09-01 |
CA2784491C (en) | 2018-02-20 |
WO2011073868A2 (fr) | 2011-06-23 |
KR20120094131A (ko) | 2012-08-23 |
FR2953999B1 (fr) | 2012-01-20 |
AU2010331900A1 (en) | 2012-07-19 |
KR20170029652A (ko) | 2017-03-15 |
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