BR112015029020A2 - célula de bateria solar do tipo de contato traseiro - Google Patents

célula de bateria solar do tipo de contato traseiro

Info

Publication number
BR112015029020A2
BR112015029020A2 BR112015029020A BR112015029020A BR112015029020A2 BR 112015029020 A2 BR112015029020 A2 BR 112015029020A2 BR 112015029020 A BR112015029020 A BR 112015029020A BR 112015029020 A BR112015029020 A BR 112015029020A BR 112015029020 A2 BR112015029020 A2 BR 112015029020A2
Authority
BR
Brazil
Prior art keywords
conductivity
solar battery
conductivity type
semiconductor substrate
contact type
Prior art date
Application number
BR112015029020A
Other languages
English (en)
Inventor
Mori Chikara
Otsuka Hiroyuki
Watabe Takenori
Original Assignee
Shinetsu Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinetsu Chemical Co filed Critical Shinetsu Chemical Co
Publication of BR112015029020A2 publication Critical patent/BR112015029020A2/pt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H01L31/022458—Electrode arrangements specially adapted for back-contact solar cells for emitter wrap-through [EWT] type solar cells, e.g. interdigitated emitter-base back-contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022433—Particular geometry of the grid contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H01L31/0516—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module specially adapted for interconnection of back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Sustainable Energy (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

resumo “célula de bateria solar do tipo de contato traseiro” a presente invenção proporciona uma bateria solar do tipo de contato traseiro, que proporciona uma menor perda de potência, um posicionamento livre de uma barra de ligações, e um simples processo de manufatura. a bateria solar inclui: um substrato semicondutor; uma região do tipo de primeira condutividade formada em um lado da superfície posterior localizada no lado oposto de um lado da superfície de aceitação do substrato semicondutor; uma região do tipo de segunda condutividade formada no lado da superfície posterior do substrato semicondutor; um eletrodo coletor do tipo de primeira condutividade formado substancialmente linearmente na região do tipo de primeira condutividade; e um eletrodo coletor do tipo de segunda condutividade formado substancialmente linearmente na região do tipo de segunda condutividade. as regiões do primeiro e segundo tipos de condutividade são dispostas alternadamente. ambos os eletrodos coletores do tipo de condutividade têm locais descontínuos. os locais descontínuos de cada tipo de condutividade são alinhados substancialmente em uma linha reta, em uma direção de disposição na qual as regiões do primeiro e segundo tipos de condutividade são dispostas alternadamente. 1/1
BR112015029020A 2013-06-07 2014-05-08 célula de bateria solar do tipo de contato traseiro BR112015029020A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013120826 2013-06-07
PCT/JP2014/062386 WO2014196307A1 (ja) 2013-06-07 2014-05-08 バックコンタクト型太陽電池セル

Publications (1)

Publication Number Publication Date
BR112015029020A2 true BR112015029020A2 (pt) 2017-07-25

Family

ID=52007960

Family Applications (1)

Application Number Title Priority Date Filing Date
BR112015029020A BR112015029020A2 (pt) 2013-06-07 2014-05-08 célula de bateria solar do tipo de contato traseiro

Country Status (11)

Country Link
US (1) US10153385B2 (pt)
EP (1) EP3007233B1 (pt)
JP (1) JP6126219B2 (pt)
KR (1) KR102186500B1 (pt)
CN (1) CN105324849B (pt)
BR (1) BR112015029020A2 (pt)
MY (1) MY176293A (pt)
RU (1) RU2015156141A (pt)
SG (1) SG11201509558VA (pt)
TW (1) TWI603490B (pt)
WO (1) WO2014196307A1 (pt)

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US10263308B2 (en) * 2014-03-24 2019-04-16 Cornell University Solar flow battery
CN104576778B (zh) * 2015-01-05 2017-08-08 苏州中来光伏新材股份有限公司 无主栅高效率背接触太阳能电池、组件及其制备工艺
JP6665166B2 (ja) * 2015-03-31 2020-03-13 株式会社カネカ 太陽電池モジュールおよびその製造方法
US10141462B2 (en) 2016-12-19 2018-11-27 Sunpower Corporation Solar cells having differentiated P-type and N-type architectures
USD841571S1 (en) 2017-08-25 2019-02-26 Flex Ltd. Solar panel
USD841570S1 (en) 2017-08-25 2019-02-26 Flex Ltd Solar cell
CN110335902A (zh) * 2017-03-09 2019-10-15 伟创力有限公司 叠瓦式阵列太阳能电池及制造包括叠瓦式阵列太阳能电池的太阳能组件的方法
CN108649043A (zh) * 2018-04-25 2018-10-12 武汉新芯集成电路制造有限公司 一种提高硅原子的悬挂键键合的方法
CN109065656A (zh) 2018-10-31 2018-12-21 伟创力有限公司 形成用于集成在太阳能电池组件中的有色导电焊带的方法
CN113851561A (zh) * 2021-12-01 2021-12-28 南京日托光伏新能源有限公司 防短路焊带的制备方法
CN114242810B (zh) * 2022-02-24 2022-04-29 广东爱旭科技有限公司 背接触电池的电极结构、电池、组件以及电池系统
CN115224137B (zh) 2022-06-21 2023-09-15 浙江晶科能源有限公司 半导体衬底及太阳能电池和光伏组件
CN115579407B (zh) * 2022-12-12 2023-03-14 浙江爱旭太阳能科技有限公司 电极结构、背接触太阳能电池片、电池组件和光伏系统

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JPS60239067A (ja) 1984-05-11 1985-11-27 Hitachi Ltd 太陽電池素子
US5178685A (en) * 1991-06-11 1993-01-12 Mobil Solar Energy Corporation Method for forming solar cell contacts and interconnecting solar cells
JPH09116175A (ja) * 1995-10-20 1997-05-02 Sanyo Electric Co Ltd 光起電力装置の電極構造
JP2005175399A (ja) * 2003-12-15 2005-06-30 Hitachi Ltd 太陽電池セルの製造方法及び太陽電池セル
JP2006324590A (ja) 2005-05-20 2006-11-30 Sharp Corp 裏面電極型太陽電池とその製造方法
WO2011072161A2 (en) * 2009-12-09 2011-06-16 Solexel, Inc. High-efficiency photovoltaic back-contact solar cell structures and manufacturing methods using thin planar semiconductors
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JP2009025147A (ja) 2007-07-19 2009-02-05 Olympus Corp 画像処理装置および画像処理プログラム
US20110120530A1 (en) 2007-08-23 2011-05-26 Takayuki Isaka Back surface contact type solar cell, back surface contact type solar cell with wiring board, solar cell string, and solar cell module
JP4501976B2 (ja) 2007-09-05 2010-07-14 株式会社デンソー 車両用ナビゲーション装置
WO2009076382A2 (en) * 2007-12-11 2009-06-18 Evergreen Solar, Inc. Shaped tab conductors for a photovoltaic cell
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Also Published As

Publication number Publication date
CN105324849A (zh) 2016-02-10
EP3007233B1 (en) 2018-08-29
TW201515247A (zh) 2015-04-16
WO2014196307A1 (ja) 2014-12-11
EP3007233A1 (en) 2016-04-13
CN105324849B (zh) 2017-07-07
US10153385B2 (en) 2018-12-11
RU2015156141A (ru) 2017-07-17
TWI603490B (zh) 2017-10-21
JP6126219B2 (ja) 2017-05-10
EP3007233A4 (en) 2017-01-18
US20160118515A1 (en) 2016-04-28
KR20160018491A (ko) 2016-02-17
SG11201509558VA (en) 2015-12-30
KR102186500B1 (ko) 2020-12-03
JPWO2014196307A1 (ja) 2017-02-23
MY176293A (en) 2020-07-27

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Legal Events

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B06F Objections, documents and/or translations needed after an examination request according [chapter 6.6 patent gazette]
B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]

Free format text: REFERENTE A 5A ANUIDADE.

B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: EM VIRTUDE DO ARQUIVAMENTO PUBLICADO NA RPI 2513 DE 06-03-2019 E CONSIDERANDO AUSENCIA DE MANIFESTACAO DENTRO DOS PRAZOS LEGAIS, INFORMO QUE CABE SER MANTIDO O ARQUIVAMENTO DO PEDIDO DE PATENTE, CONFORME O DISPOSTO NO ARTIGO 12, DA RESOLUCAO 113/2013.

B350 Update of information on the portal [chapter 15.35 patent gazette]