BRPI0805314A2 - dispositivos de contato embutidos para filmes baseados em nitreto e produção dos mesmos - Google Patents

dispositivos de contato embutidos para filmes baseados em nitreto e produção dos mesmos

Info

Publication number
BRPI0805314A2
BRPI0805314A2 BRPI0805314-6A BRPI0805314A BRPI0805314A2 BR PI0805314 A2 BRPI0805314 A2 BR PI0805314A2 BR PI0805314 A BRPI0805314 A BR PI0805314A BR PI0805314 A2 BRPI0805314 A2 BR PI0805314A2
Authority
BR
Brazil
Prior art keywords
layer
contact
production
contact devices
nitride based
Prior art date
Application number
BRPI0805314-6A
Other languages
English (en)
Inventor
Kenneth Scott Alexander Butcher
Marie-Pierre Francoise Fouquet
Alanna Julia June Fernandes
Original Assignee
Gallium Entpr Pty Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from AU2007903940A external-priority patent/AU2007903940A0/en
Application filed by Gallium Entpr Pty Ltd filed Critical Gallium Entpr Pty Ltd
Publication of BRPI0805314A2 publication Critical patent/BRPI0805314A2/pt

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00—Highly-doped buried regions of integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00—Highly-doped buried regions of integrated devices
    • H10W15/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8316—Multi-layer electrodes comprising at least one discontinuous layer

Landscapes

  • Led Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Lasers (AREA)
  • Bipolar Transistors (AREA)

Abstract

DISPOSITIVOS DE CONTATO EMBUTIDOS PARA FILMES BASEADOS EM NITRETO E PRODUçãO DOS MESMOS. A presente invenção refere-se a dispositivo semicondutor, que compreende: um substrato; um primeiro contato; uma primeira camada de material semicondutor dopado, depositada sobre o substrato; uma região de junção semicondutora, depositada sobre a primeira camada; uma segunda camada de material semicondutor dopado, depositada sobre a região de junção, sendo que a segunda camada tem uma polaridade de dopagem semicondutora oposta à da primeira camada; e um segundo contato; sendo que o segundo contato está em comunicação elétrica com a segunda camada e o primeiro contato está embutido dentro do dispositivo semicondutor entre o substrato e a região de junção e está em comunicação elétrica com a primeira camada; e processos para produção de um dispositivo semicondutor de contato embutido.
BRPI0805314-6A 2007-07-20 2008-07-21 dispositivos de contato embutidos para filmes baseados em nitreto e produção dos mesmos BRPI0805314A2 (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
AU2007903940A AU2007903940A0 (en) 2007-07-20 Buried contact devices for a nitride-based films and manufacture thereof

Publications (1)

Publication Number Publication Date
BRPI0805314A2 true BRPI0805314A2 (pt) 2009-07-28

Family

ID=39884395

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0805314-6A BRPI0805314A2 (pt) 2007-07-20 2008-07-21 dispositivos de contato embutidos para filmes baseados em nitreto e produção dos mesmos

Country Status (12)

Country Link
US (1) US20090020768A1 (pt)
EP (1) EP2017884A3 (pt)
JP (1) JP2009044149A (pt)
KR (1) KR20090009761A (pt)
CN (1) CN101604665A (pt)
AU (1) AU2008203209A1 (pt)
BR (1) BRPI0805314A2 (pt)
CA (1) CA2638191A1 (pt)
RU (1) RU2394305C2 (pt)
SG (1) SG149774A1 (pt)
TW (1) TW200915476A (pt)
ZA (1) ZA200806479B (pt)

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Also Published As

Publication number Publication date
CN101604665A (zh) 2009-12-16
EP2017884A2 (en) 2009-01-21
SG149774A1 (en) 2009-02-27
EP2017884A3 (en) 2011-03-23
ZA200806479B (en) 2009-04-29
RU2394305C2 (ru) 2010-07-10
TW200915476A (en) 2009-04-01
AU2008203209A1 (en) 2009-02-05
CA2638191A1 (en) 2009-01-20
JP2009044149A (ja) 2009-02-26
RU2008129818A (ru) 2010-01-27
US20090020768A1 (en) 2009-01-22
KR20090009761A (ko) 2009-01-23

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Legal Events

Date Code Title Description
B03A Publication of a patent application or of a certificate of addition of invention [chapter 3.1 patent gazette]
B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]

Free format text: REFERENTE A 3A ANUIDADE.

B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: NAO APRESENTADA A GUIA DE CUMPRIMENTO DE EXIGENCIA. REFERENTE AS 3A E 4A ANUIDADES.