FR3040822B1 - Procede de fabrication d'un dispositif a jonction electronique et dispositif associe - Google Patents

Procede de fabrication d'un dispositif a jonction electronique et dispositif associe Download PDF

Info

Publication number
FR3040822B1
FR3040822B1 FR1558267A FR1558267A FR3040822B1 FR 3040822 B1 FR3040822 B1 FR 3040822B1 FR 1558267 A FR1558267 A FR 1558267A FR 1558267 A FR1558267 A FR 1558267A FR 3040822 B1 FR3040822 B1 FR 3040822B1
Authority
FR
France
Prior art keywords
manufacturing electronic
electronic junction
junction device
manufacturing
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1558267A
Other languages
English (en)
Other versions
FR3040822A1 (fr
Inventor
Olivier Plantevin
Alice Defresne
Pere Roca I Cabarrocas
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Ecole Polytechnique
Universite Paris Saclay
Original Assignee
Centre National de la Recherche Scientifique CNRS
Ecole Polytechnique
Universite Paris Sud Paris 11
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National de la Recherche Scientifique CNRS, Ecole Polytechnique, Universite Paris Sud Paris 11 filed Critical Centre National de la Recherche Scientifique CNRS
Priority to FR1558267A priority Critical patent/FR3040822B1/fr
Priority to EP16775803.6A priority patent/EP3347921A1/fr
Priority to PCT/FR2016/052228 priority patent/WO2017042486A1/fr
Publication of FR3040822A1 publication Critical patent/FR3040822A1/fr
Application granted granted Critical
Publication of FR3040822B1 publication Critical patent/FR3040822B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1864—Annealing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1868—Passivation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
  • Photovoltaic Devices (AREA)
FR1558267A 2015-09-07 2015-09-07 Procede de fabrication d'un dispositif a jonction electronique et dispositif associe Active FR3040822B1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR1558267A FR3040822B1 (fr) 2015-09-07 2015-09-07 Procede de fabrication d'un dispositif a jonction electronique et dispositif associe
EP16775803.6A EP3347921A1 (fr) 2015-09-07 2016-09-07 Procédé de fabrication d'un dispositif à jonction électronique et dispositif associé
PCT/FR2016/052228 WO2017042486A1 (fr) 2015-09-07 2016-09-07 Procédé de fabrication d'un dispositif à jonction électronique et dispositif associé

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1558267 2015-09-07
FR1558267A FR3040822B1 (fr) 2015-09-07 2015-09-07 Procede de fabrication d'un dispositif a jonction electronique et dispositif associe

Publications (2)

Publication Number Publication Date
FR3040822A1 FR3040822A1 (fr) 2017-03-10
FR3040822B1 true FR3040822B1 (fr) 2018-02-23

Family

ID=54366396

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1558267A Active FR3040822B1 (fr) 2015-09-07 2015-09-07 Procede de fabrication d'un dispositif a jonction electronique et dispositif associe

Country Status (3)

Country Link
EP (1) EP3347921A1 (fr)
FR (1) FR3040822B1 (fr)
WO (1) WO2017042486A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112930583A (zh) 2018-10-24 2021-06-08 新南创新私人有限公司 一种改善异质结太阳能电池性能的方法
FR3099294B1 (fr) * 2019-07-26 2021-07-30 Commissariat Energie Atomique Procédé de traitement d’un precurseur de cellule photovoltaïque a hétérojonction

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006110048A1 (fr) * 2005-04-14 2006-10-19 Renewable Energy Corporation Asa Passivation de surface de galettes à base de silicium
FR2953999B1 (fr) * 2009-12-14 2012-01-20 Total Sa Cellule photovoltaique heterojonction a contact arriere

Also Published As

Publication number Publication date
FR3040822A1 (fr) 2017-03-10
WO2017042486A1 (fr) 2017-03-16
EP3347921A1 (fr) 2018-07-18

Similar Documents

Publication Publication Date Title
FR3021145B1 (fr) Procede de fabrication d'un circuit pour module de carte a puce et circuit pour module de carte a puce
FR3043852B1 (fr) Dispositif laser et procede de fabrication d’un tel dispositif laser
FR3033977B1 (fr) Procede de fabrication d'un circuit imprime et circuits imprimes correspondants
FR3025056B1 (fr) Dispositif laser et procede de fabrication d'un tel dispositif laser
FR3003086B1 (fr) Dispositif a semi-conducteur et son procede de fabrication
FR3032064B1 (fr) Dispositif optoelectronique et son procede de fabrication
FR3053526B1 (fr) Procede de fabrication collective de dispositifs electroniques et dispositif electronique
FR3051064B1 (fr) Procede de securisation d'un dispositif electronique, et dispositif electronique correspondant
FR3023064B1 (fr) Dispositif photovoltaique et son procede de fabrication
FR2977944B1 (fr) Dispositif electronique et son procede de fabrication
FR3013510B1 (fr) Procede de fabrication d'un dispositif pyroelectrique et/ou piezoelectrique
FR3043192B1 (fr) Procede de mise a feu d'un detonateur electronique et detonateur electronique
FR3030763B1 (fr) Dispositif comprenant des elements de mesure de courant et procede de fabrication d'un tel dispositif
FR3023027B1 (fr) Procede de gestion du fonctionnement d'un circuit redondant a vote majoritaire et dispositif associe
FR3045940B1 (fr) Dispositif d'inductance et son procede de fabrication
FR3006108B1 (fr) Procede de fabrication d'un dispositif photosensible
FR3040822B1 (fr) Procede de fabrication d'un dispositif a jonction electronique et dispositif associe
FR3043376B1 (fr) Volant et procede de fabrication d'un tel volant.
FR3046559B1 (fr) Procede et installation de fabrication d'un objet tridimensionnel
FR3037613B1 (fr) Dispositif et procede de fabrication d’un voussoir de tunnel
FR3034906B1 (fr) Procede de fabrication d'un circuit integre cointegrant un transistor fet et un point memoire oxram
FR3035815B1 (fr) Procede de fabrication d'une piece plastique, et dispositif associe
FR3037859B1 (fr) Dispositif et procede de production d'un element multicouche
FR3031835B1 (fr) Procede de realisation d'un circuit electronique integre tridimensionnel
FR3029015B1 (fr) Dispositif optoelectronique a elements semiconducteurs tridimensionnels et son procede de fabrication

Legal Events

Date Code Title Description
PLFP Fee payment

Year of fee payment: 2

PLSC Publication of the preliminary search report

Effective date: 20170310

PLFP Fee payment

Year of fee payment: 3

PLFP Fee payment

Year of fee payment: 4

PLFP Fee payment

Year of fee payment: 5

PLFP Fee payment

Year of fee payment: 6

PLFP Fee payment

Year of fee payment: 7

PLFP Fee payment

Year of fee payment: 8

TQ Partial transmission of property

Owner name: UNIVERSITE PARIS-SACLAY, FR

Effective date: 20221206

Owner name: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, FR

Effective date: 20221206

Owner name: ECOLE POLYTECHNIQUE, FR

Effective date: 20221206

PLFP Fee payment

Year of fee payment: 9