BG106739A - Метод за образуване на силициева наноструктура, силициева квантова проводима решетка и устройства базиращи се на тях - Google Patents

Метод за образуване на силициева наноструктура, силициева квантова проводима решетка и устройства базиращи се на тях

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Publication number
BG106739A
BG106739A BG106739A BG10673902A BG106739A BG 106739 A BG106739 A BG 106739A BG 106739 A BG106739 A BG 106739A BG 10673902 A BG10673902 A BG 10673902A BG 106739 A BG106739 A BG 106739A
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silicon
relief
wave
ion
quantum wire
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BG106739A
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English (en)
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Sceptre Electronics Limited
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/2633—Bombardment with radiation with high-energy radiation for etching, e.g. sputteretching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/122—Single quantum well structures
    • H01L29/125—Quantum wire structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66439—Unipolar field-effect transistors with a one- or zero-dimensional channel, e.g. quantum wire FET, in-plane gate transistor [IPG], single electron transistor [SET], striped channel transistor, Coulomb blockade transistor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Nanotechnology (AREA)
  • Health & Medical Sciences (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Toxicology (AREA)
  • Physical Vapour Deposition (AREA)
  • Thin Film Transistor (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Drying Of Semiconductors (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

Изобретението се отнася до метод за контролирано образуване на силициеви наноструктури, като решетки от силициеви квантови проводници. Силициевата повърхност се разпрашава чрез равномерен поток азотномолекулни йони при свръхвисок вакуум за образуване на периодичен вълнообразен релеф, като улеите нарелефа са наравно с границата на материала силиций върху изолатор (СВИ). Йонната енергия, ъгълът нападане на йоните на повърхността на посочения материал, температурата на силициевия слой, дълбочината на образуване на вълнообразния релеф, височинатана вълнообразния релеф и диапазонът на проникванена йоните в силиция се определят на базата на избрана дължина на вълната на вълнообразния релеф в диапазон от 9 до 120 nm. Използва се силициева нитридна маска с висящи краища за определяне на областта от силициевата повърхност, върху която се образува решетката (7). Преди разпрашаването от повърхността на силициевия слой в прозореца в маска се премахват замърсителите. За образуването на решетката (7) от силициеви квантови проводници дебелината на СВИ силициевия слой (6) се подбира така, че да е по-голяма от сумата на дебелината на образуване,височината на вълнообразния релеф и диапазона найонно проникване. Производството на силициевите проводници се контролира чрез пределна стойност на сигнал на вторична йонна емисия от СВИ изолатора. Наноструктурата може да се използва за оптикоелектронни и електронни устройства като полеви транзистори.
BG106739A 1999-11-25 2002-05-27 Метод за образуване на силициева наноструктура, силициева квантова проводима решетка и устройства базиращи се на тях BG106739A (bg)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
RU99124768/28A RU2173003C2 (ru) 1999-11-25 1999-11-25 Способ образования кремниевой наноструктуры, решетки кремниевых квантовых проводков и основанных на них устройств
PCT/IB2000/001397 WO2001039259A1 (en) 1999-11-25 2000-10-02 Methods of formation of a silicon nanostructure, a silicon quantum wire array and devices based thereon

Publications (1)

Publication Number Publication Date
BG106739A true BG106739A (bg) 2003-08-29

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Country Status (23)

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US (1) US6274007B1 (bg)
EP (1) EP1104011A1 (bg)
JP (1) JP2001156050A (bg)
KR (1) KR20020069195A (bg)
CN (1) CN1399791A (bg)
AU (1) AU7547400A (bg)
BG (1) BG106739A (bg)
BR (1) BR0016095A (bg)
CA (1) CA2392307A1 (bg)
CZ (1) CZ20021824A3 (bg)
EE (1) EE200200261A (bg)
HR (1) HRP20020459A2 (bg)
HU (1) HUP0203517A2 (bg)
IL (1) IL149832A0 (bg)
IS (1) IS6393A (bg)
MX (1) MXPA02005281A (bg)
NO (1) NO20022427L (bg)
PL (1) PL355890A1 (bg)
RU (1) RU2173003C2 (bg)
SK (1) SK7442002A3 (bg)
WO (1) WO2001039259A1 (bg)
YU (1) YU38202A (bg)
ZA (1) ZA200204822B (bg)

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