BE680529A - - Google Patents

Info

Publication number
BE680529A
BE680529A BE680529DA BE680529A BE 680529 A BE680529 A BE 680529A BE 680529D A BE680529D A BE 680529DA BE 680529 A BE680529 A BE 680529A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE680529A publication Critical patent/BE680529A/xx

Links

Classifications

    • H10W72/30—
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C27/00—Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing
    • C03C27/02—Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing by fusing glass directly to metal
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/64—Burning or sintering processes
    • C04B35/65—Reaction sintering of free metal- or free silicon-containing compositions
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/021—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles in a direct manner, e.g. direct copper bonding [DCB]
    • H10P14/47—
    • H10P95/80—
    • H10W20/40—
    • H10W72/60—
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
    • C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
    • C04B2235/6567—Treatment time
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
    • C04B2235/66—Specific sintering techniques, e.g. centrifugal sintering
    • C04B2235/666—Applying a current during sintering, e.g. plasma sintering [SPS], electrical resistance heating or pulse electric current sintering [PECS]
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/04—Ceramic interlayers
    • C04B2237/06—Oxidic interlayers
    • C04B2237/062—Oxidic interlayers based on silica or silicates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/34—Oxidic
    • C04B2237/341—Silica or silicates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/34—Oxidic
    • C04B2237/343—Alumina or aluminates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/40—Metallic
    • C04B2237/402—Aluminium
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/40—Metallic
    • C04B2237/403—Refractory metals
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/40—Metallic
    • C04B2237/408—Noble metals, e.g. palladium, platina or silver
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/52—Pre-treatment of the joining surfaces, e.g. cleaning, machining
    • C04B2237/525—Pre-treatment of the joining surfaces, e.g. cleaning, machining by heating
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/62—Forming laminates or joined articles comprising holes, channels or other types of openings
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/86—Joining of two substrates at their largest surfaces, one surface being complete joined and covered, the other surface not, e.g. a small plate joined at it's largest surface on top of a larger plate
    • H10P14/6923—
    • H10W70/093—
    • H10W72/073—
    • H10W72/07337—
    • H10W90/10—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S228/00—Metal fusion bonding
    • Y10S228/903—Metal to nonmetal

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Structural Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Ceramic Products (AREA)
  • Joining Of Glass To Other Materials (AREA)
  • Die Bonding (AREA)
  • Pressure Sensors (AREA)
  • Electrodes Of Semiconductors (AREA)
BE680529D 1965-05-06 1966-05-04 BE680529A (enExample)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US45360065A 1965-05-06 1965-05-06
US51177165A 1965-12-06 1965-12-06
US583907A US3397278A (en) 1965-05-06 1966-10-03 Anodic bonding

Publications (1)

Publication Number Publication Date
BE680529A true BE680529A (enExample) 1966-11-04

Family

ID=27412574

Family Applications (1)

Application Number Title Priority Date Filing Date
BE680529D BE680529A (enExample) 1965-05-06 1966-05-04

Country Status (13)

Country Link
US (1) US3397278A (enExample)
JP (1) JPS5328747B1 (enExample)
BE (1) BE680529A (enExample)
BR (1) BR6679299D0 (enExample)
CH (1) CH451273A (enExample)
DE (1) DE1665042A1 (enExample)
DK (1) DK127988B (enExample)
FR (1) FR1478918A (enExample)
GB (1) GB1138401A (enExample)
IL (1) IL25656A (enExample)
NL (1) NL153720B (enExample)
NO (1) NO119844B (enExample)
SE (1) SE351518B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017006218A1 (fr) * 2015-07-06 2017-01-12 Cartier International Ag Procédé de fixation par assemblage anodique
WO2017006219A1 (fr) * 2015-07-06 2017-01-12 Cartier International Ag Procédé de fixation par assemblage anodique

Families Citing this family (181)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3470348A (en) * 1966-04-18 1969-09-30 Mallory & Co Inc P R Anodic bonding of liquid metals to insulators
US3506545A (en) * 1967-02-14 1970-04-14 Ibm Method for plating conductive patterns with high resolution
US3506424A (en) * 1967-05-03 1970-04-14 Mallory & Co Inc P R Bonding an insulator to an insulator
US3521128A (en) * 1967-08-02 1970-07-21 Rca Corp Microminiature electrical component having integral indexing means
US3577629A (en) * 1968-10-18 1971-05-04 Mallory & Co Inc P R Bonding oxidizable metals to insulators
US3722074A (en) * 1969-04-21 1973-03-27 Philips Corp Method of sealing a metal article to a glass article in a vacuum-tight manner
JPS4831507B1 (enExample) * 1969-07-10 1973-09-29
US3697917A (en) * 1971-08-02 1972-10-10 Gen Electric Semiconductor strain gage pressure transducer
US3783218A (en) * 1972-01-12 1974-01-01 Gen Electric Electrostatic bonding process
US3775839A (en) * 1972-03-27 1973-12-04 Itt Method of making a transducer
US3778896A (en) * 1972-05-05 1973-12-18 Bell & Howell Co Bonding an insulator to an inorganic member
US3781978A (en) * 1972-05-16 1974-01-01 Gen Electric Process of making thermoelectrostatic bonded semiconductor devices
BE792414A (fr) * 1972-06-21 1973-03-30 Siemens Ag Procede d'etablissement d'une liaison etanche aux gaz pour des pieces en silicium ou carbure de silicium cristallin
US4034181A (en) * 1972-08-18 1977-07-05 Minnesota Mining And Manufacturing Company Adhesive-free process for bonding a semiconductor crystal to an electrically insulating, thermally conductive stratum
US3803706A (en) * 1972-12-27 1974-04-16 Itt Method of making a transducer
US3951707A (en) * 1973-04-02 1976-04-20 Kulite Semiconductor Products, Inc. Method for fabricating glass-backed transducers and glass-backed structures
US3805377A (en) * 1973-04-18 1974-04-23 Itt Method of making a transducer
JPS5527120Y2 (enExample) * 1974-03-28 1980-06-28
US3902979A (en) * 1974-06-24 1975-09-02 Westinghouse Electric Corp Insulator substrate with a thin mono-crystalline semiconductive layer and method of fabrication
US3953920A (en) * 1975-05-14 1976-05-04 International Telephone & Telegraph Corporation Method of making a transducer
CA1063254A (en) * 1975-09-04 1979-09-25 Shu-Yau Wu Electrostatically bonded semiconductor-on-insulator mos device, and a method of making the same
CA1078217A (en) * 1976-03-31 1980-05-27 Robert C. Whitehead (Jr.) Force transducing cantilever beam and pressure transducer incorporating it
US4203128A (en) * 1976-11-08 1980-05-13 Wisconsin Alumni Research Foundation Electrostatically deformable thin silicon membranes
US4083710A (en) * 1977-01-21 1978-04-11 Rca Corporation Method of forming a metal pattern on an insulating substrate
US4197171A (en) * 1977-06-17 1980-04-08 General Electric Company Solid electrolyte material composite body, and method of bonding
US4109063A (en) * 1977-06-17 1978-08-22 General Electric Company Composite body
US4142946A (en) * 1977-06-17 1979-03-06 General Electric Company Method of bonding a metallic element to a solid ion-conductive electrolyte material element
US4142945A (en) * 1977-06-22 1979-03-06 General Electric Company Method of forming a composite body and method of bonding
US4179324A (en) * 1977-11-28 1979-12-18 Spire Corporation Process for fabricating thin film and glass sheet laminate
DE2943231A1 (de) * 1978-03-17 1980-12-11 Hitachi Ltd Semiconductor pressure sensors having a plurality of pressure-sensitive diaphragms and method of manufacturing the same
JPS54131892A (en) * 1978-04-05 1979-10-13 Hitachi Ltd Semiconductor pressure converter
US4216477A (en) * 1978-05-10 1980-08-05 Hitachi, Ltd. Nozzle head of an ink-jet printing apparatus with built-in fluid diodes
JPS5516228A (en) * 1978-07-21 1980-02-04 Hitachi Ltd Capacity type sensor
JPS5543819A (en) * 1978-09-22 1980-03-27 Hitachi Ltd Pressure detecting equipment
JPS5544786A (en) * 1978-09-27 1980-03-29 Hitachi Ltd Pressure sensor
US4230256A (en) * 1978-11-06 1980-10-28 General Electric Company Method of bonding a composite body to a metallic element
DE2909985C3 (de) * 1979-03-14 1981-10-22 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zur Herstellung eines Halbleiter-Glas-Verbundwerkstoffs und Verwendung eines solchen Verbundwerkstoffes
US4234361A (en) * 1979-07-05 1980-11-18 Wisconsin Alumni Research Foundation Process for producing an electrostatically deformable thin silicon membranes utilizing a two-stage diffusion step to form an etchant resistant layer
US4294602A (en) * 1979-08-09 1981-10-13 The Boeing Company Electro-optically assisted bonding
US4386453A (en) * 1979-09-04 1983-06-07 Ford Motor Company Method for manufacturing variable capacitance pressure transducers
US4261086A (en) * 1979-09-04 1981-04-14 Ford Motor Company Method for manufacturing variable capacitance pressure transducers
US4306243A (en) * 1979-09-21 1981-12-15 Dataproducts Corporation Ink jet head structure
US4322980A (en) * 1979-11-08 1982-04-06 Hitachi, Ltd. Semiconductor pressure sensor having plural pressure sensitive diaphragms and method
NL8003696A (nl) * 1980-06-26 1982-01-18 Philips Nv Werkwijze voor het vervaardigen van een elektrische ontladingsinrichting, welke een van een elektroden- patroon voorzien glazen substraat bevat en aldus ver- kregen elektrische ontladingsinrichting.
GB2090710B (en) * 1980-12-26 1984-10-03 Matsushita Electric Industrial Co Ltd Thermistor heating device
US4393105A (en) * 1981-04-20 1983-07-12 Spire Corporation Method of fabricating a thermal pane window and product
US4390925A (en) * 1981-08-26 1983-06-28 Leeds & Northrup Company Multiple-cavity variable capacitance pressure transducer
US4384899A (en) * 1981-11-09 1983-05-24 Motorola Inc. Bonding method adaptable for manufacturing capacitive pressure sensing elements
US4475790A (en) * 1982-01-25 1984-10-09 Spire Corporation Fiber optic coupler
FI65674C (fi) * 1982-12-21 1984-06-11 Vaisala Oy Kapacitiv fuktighetsgivare och foerfarande foer framstaellningdaerav
US4527428A (en) * 1982-12-30 1985-07-09 Hitachi, Ltd. Semiconductor pressure transducer
US4501060A (en) * 1983-01-24 1985-02-26 At&T Bell Laboratories Dielectrically isolated semiconductor devices
JPS6051700A (ja) * 1983-08-31 1985-03-23 Toshiba Corp シリコン結晶体の接合方法
JPS60131746A (ja) * 1983-12-20 1985-07-13 Hitachi Ltd 荷電粒子線用加速管
US4543457A (en) * 1984-01-25 1985-09-24 Transensory Devices, Inc. Microminiature force-sensitive switch
US4525766A (en) * 1984-01-25 1985-06-25 Transensory Devices, Inc. Method and apparatus for forming hermetically sealed electrical feedthrough conductors
US4632871A (en) * 1984-02-16 1986-12-30 Varian Associates, Inc. Anodic bonding method and apparatus for X-ray masks
US4613891A (en) * 1984-02-17 1986-09-23 At&T Bell Laboratories Packaging microminiature devices
FI69211C (fi) * 1984-02-21 1985-12-10 Vaisala Oy Kapacitiv styckgivare
FI75426C (fi) * 1984-10-11 1988-06-09 Vaisala Oy Absoluttryckgivare.
US4625560A (en) * 1985-05-13 1986-12-02 The Scott & Fetzer Company Capacitive digital integrated circuit pressure transducer
US4741796A (en) * 1985-05-29 1988-05-03 Siemens Aktiengesellschaft Method for positioning and bonding a solid body to a support base
US4643532A (en) * 1985-06-24 1987-02-17 At&T Bell Laboratories Field-assisted bonding method and articles produced thereby
US4639631A (en) * 1985-07-01 1987-01-27 Motorola, Inc. Electrostatically sealed piezoelectric device
US4680243A (en) * 1985-08-02 1987-07-14 Micronix Corporation Method for producing a mask for use in X-ray photolithography and resulting structure
NL8600216A (nl) * 1986-01-30 1987-08-17 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
DE3621331A1 (de) * 1986-06-26 1988-01-14 Fraunhofer Ges Forschung Mikroventil
US4773972A (en) * 1986-10-30 1988-09-27 Ford Motor Company Method of making silicon capacitive pressure sensor with glass layer between silicon wafers
CH671653A5 (enExample) * 1986-11-03 1989-09-15 Landis & Gyr Ag
US4737756A (en) * 1987-01-08 1988-04-12 Imo Delaval Incorporated Electrostatically bonded pressure transducers for corrosive fluids
US4875750A (en) * 1987-02-25 1989-10-24 Siemens Aktiengesellschaft Optoelectronic coupling element and method for its manufacture
FI872049L (fi) * 1987-05-08 1988-11-09 Vaisala Oy Kondensatorkonstruktion foer anvaendning vid tryckgivare.
FI84401C (fi) * 1987-05-08 1991-11-25 Vaisala Oy Kapacitiv tryckgivarkonstruktion.
US5013396A (en) * 1987-06-01 1991-05-07 The Regents Of The University Of Michigan Method of making an ultraminiature pressure sensor
US5207103A (en) * 1987-06-01 1993-05-04 Wise Kensall D Ultraminiature single-crystal sensor with movable member
US4881410A (en) * 1987-06-01 1989-11-21 The Regents Of The University Of Michigan Ultraminiature pressure sensor and method of making same
JPS63304133A (ja) * 1987-06-05 1988-12-12 Hitachi Ltd 混合ガスを用いる分析計
US4852408A (en) * 1987-09-03 1989-08-01 Scott Fetzer Company Stop for integrated circuit diaphragm
US5343064A (en) * 1988-03-18 1994-08-30 Spangler Leland J Fully integrated single-crystal silicon-on-insulator process, sensors and circuits
JP2544435B2 (ja) * 1988-04-06 1996-10-16 株式会社日立製作所 多機能センサ
DE3943859B4 (de) * 1988-06-08 2005-04-21 Denso Corp., Kariya Verfahren zur Herstellung eines Halbleiterdrucksensors
US5017252A (en) * 1988-12-06 1991-05-21 Interpane Coatings, Inc. Method for fabricating insulating glass assemblies
US4996627A (en) * 1989-01-30 1991-02-26 Dresser Industries, Inc. High sensitivity miniature pressure transducer
DE3937529A1 (de) * 1989-11-08 1991-05-16 Siemens Ag Verfahren zum verbinden eines siliziumteiles mit einem glasteil
DE4101205A1 (de) * 1990-02-09 1991-08-14 Asea Brown Boveri Gekuehltes hochleistungshalbleiterbauelement
US5009690A (en) * 1990-03-09 1991-04-23 The United States Of America As Represented By The United States Department Of Energy Method of bonding single crystal quartz by field-assisted bonding
JP2527834B2 (ja) * 1990-07-20 1996-08-28 三菱電機株式会社 陽極接合法
US6164759A (en) * 1990-09-21 2000-12-26 Seiko Epson Corporation Method for producing an electrostatic actuator and an inkjet head using it
DE4108304C2 (de) * 1991-03-14 1995-04-06 Fraunhofer Ges Forschung Vorrichtung zum anodischen Bonden von Silizium-Wafern mit Tragekörpern
JP2812405B2 (ja) * 1991-03-15 1998-10-22 信越半導体株式会社 半導体基板の製造方法
ATE231287T1 (de) * 1991-09-30 2003-02-15 Canon Kk Verfahren für anodische bindung mit lichtstrahlung
DE4136075C3 (de) * 1991-10-30 1999-05-20 Siemens Ag Verfahren zum Verbinden eines scheibenförmigen Isolierkörpers mit einem scheibenförmigen, leitfähigen Körper
JPH05169666A (ja) * 1991-12-25 1993-07-09 Rohm Co Ltd インクジェットプリントヘッドの製造方法
US5273827A (en) * 1992-01-21 1993-12-28 Corning Incorporated Composite article and method
DE4207951C2 (de) * 1992-03-10 1995-08-31 Mannesmann Ag Kapazitiver Druck- oder Differenzdrucksensor in Glas-Silizium-Technik
US5264820A (en) * 1992-03-31 1993-11-23 Eaton Corporation Diaphragm mounting system for a pressure transducer
DE4219132A1 (de) * 1992-06-11 1993-12-16 Suess Kg Karl Verfahren zum Herstellen von Silizium/Glas- oder Silizium/Silizium-Verbindungen
IL107120A (en) * 1992-09-29 1997-09-30 Boehringer Ingelheim Int Atomising nozzle and filter and spray generating device
US6007676A (en) 1992-09-29 1999-12-28 Boehringer Ingelheim International Gmbh Atomizing nozzle and filter and spray generating device
JP3300060B2 (ja) * 1992-10-22 2002-07-08 キヤノン株式会社 加速度センサー及びその製造方法
JP3402635B2 (ja) * 1992-12-08 2003-05-06 キヤノン株式会社 微小流路素子
JPH06350376A (ja) * 1993-01-25 1994-12-22 Matsushita Electric Ind Co Ltd 気密封止された圧電デバイスおよび気密封止パッケージ
JP3188546B2 (ja) * 1993-03-23 2001-07-16 キヤノン株式会社 絶縁体と導電体との接合体並びに接合方法
DE4321804A1 (de) * 1993-06-30 1995-01-12 Ranco Inc Verfahren zur Herstellung von Kleinbauelementen
FI93059C (fi) * 1993-07-07 1995-02-10 Vaisala Oy Kapasitiivinen paineanturirakenne ja menetelmä sen valmistamiseksi
FI93579C (fi) * 1993-08-20 1995-04-25 Vaisala Oy Sähköstaattisen voiman avulla takaisinkytketty kapasitiivinen anturi ja menetelmä sen aktiivisen elementin muodon ohjaamiseksi
DE69429848T2 (de) * 1993-11-01 2002-09-26 Matsushita Electric Industrial Co., Ltd. Elektronische Anordnung und Verfahren zur Herstellung
EP0657900B1 (en) * 1993-12-06 1998-03-25 Matsushita Electric Industrial Co., Ltd. Hybrid magnetic structure and method for producing the same
EP0671372A3 (en) * 1994-03-09 1996-07-10 Seiko Epson Corp Anodic bonding method and method of manufacturing an ink jet head using the bonding method.
JPH07263991A (ja) * 1994-03-18 1995-10-13 Fujitsu Ltd 導電性接着樹脂を用いた直列共振デバイスの製造方法
DE4423164A1 (de) * 1994-07-04 1996-01-11 Karl Suss Dresden Gmbh Anordnung von Elektroden zum anodischen Bonden
JP3383081B2 (ja) 1994-07-12 2003-03-04 三菱電機株式会社 陽極接合法を用いて製造した電子部品及び電子部品の製造方法
DE19525388B4 (de) * 1994-07-12 2005-06-02 Mitsubishi Denki K.K. Elektronikbauteil mit anodisch gebondetem Leiterrahmen
US5637458A (en) * 1994-07-20 1997-06-10 Sios, Inc. Apparatus and method for the detection and assay of organic molecules
US5479827A (en) * 1994-10-07 1996-01-02 Yamatake-Honeywell Co., Ltd. Capacitive pressure sensor isolating electrodes from external environment
DE4436561C1 (de) * 1994-10-13 1996-03-14 Deutsche Spezialglas Ag Verfahren zur Veränderung der Durchbiegung von anodisch gebondeten flächigen Verbundkörpern aus Glas und Metall oder Halbleitermaterialien
JPH08122359A (ja) * 1994-10-21 1996-05-17 Fuji Electric Co Ltd 半導体加速度センサとその製造方法および試験方法
DE4446704C1 (de) * 1994-12-12 1996-04-11 Mannesmann Ag Verfahren zum anodischen Bonden
DE4446703C2 (de) * 1994-12-12 1996-10-17 Mannesmann Ag Anordnung zum anodischen Bonden
JP3319912B2 (ja) * 1995-06-29 2002-09-03 株式会社デンソー 半導体センサ用台座およびその加工方法
JP3206467B2 (ja) * 1996-12-25 2001-09-10 トヨタ自動車株式会社 太陽電池セルの冷却液封止構造
US6554671B1 (en) * 1997-05-14 2003-04-29 Micron Technology, Inc. Method of anodically bonding elements for flat panel displays
US5980349A (en) 1997-05-14 1999-11-09 Micron Technology, Inc. Anodically-bonded elements for flat panel displays
DE19742439C1 (de) 1997-09-26 1998-10-22 Boehringer Ingelheim Int Mikrostrukturiertes Filter
US6004179A (en) * 1998-10-26 1999-12-21 Micron Technology, Inc. Methods of fabricating flat panel evacuated displays
JP3961182B2 (ja) * 1999-01-29 2007-08-22 セイコーインスツル株式会社 陽極接合方法
US6525462B1 (en) 1999-03-24 2003-02-25 Micron Technology, Inc. Conductive spacer for field emission displays and method
US6550337B1 (en) * 2000-01-19 2003-04-22 Measurement Specialties, Inc. Isolation technique for pressure sensing structure
IT1320381B1 (it) * 2000-05-29 2003-11-26 Olivetti Lexikon Spa Metodo per la fabbricazione di una testina di eiezione di gocce diliquido particolarmente adatta per operare con liquidi chimicamente
US6638627B2 (en) * 2000-12-13 2003-10-28 Rochester Institute Of Technology Method for electrostatic force bonding and a system thereof
WO2002073673A1 (en) 2001-03-13 2002-09-19 Rochester Institute Of Technology A micro-electro-mechanical switch and a method of using and making thereof
US6660614B2 (en) 2001-05-04 2003-12-09 New Mexico Tech Research Foundation Method for anodically bonding glass and semiconducting material together
AU2002303933A1 (en) 2001-05-31 2002-12-09 Rochester Institute Of Technology Fluidic valves, agitators, and pumps and methods thereof
US7211923B2 (en) 2001-10-26 2007-05-01 Nth Tech Corporation Rotational motion based, electrostatic power source and methods thereof
US7378775B2 (en) 2001-10-26 2008-05-27 Nth Tech Corporation Motion based, electrostatic power source and methods thereof
JP2003229503A (ja) * 2002-01-31 2003-08-15 Nec Schott Components Corp 気密端子及びその製造方法
KR100446624B1 (ko) * 2002-02-27 2004-09-04 삼성전자주식회사 양극접합 구조체 및 그 제조방법
JP2003302299A (ja) * 2002-04-10 2003-10-24 Denso Corp 力学量検出装置の製造方法
US6939778B2 (en) * 2002-04-18 2005-09-06 The Regents Of The University Of Michigan Method of joining an insulator element to a substrate
US20070286773A1 (en) * 2002-05-16 2007-12-13 Micronit Microfluidics B.V. Microfluidic Device
EP1362827B1 (en) * 2002-05-16 2008-09-03 Micronit Microfluidics B.V. Method of fabrication of a microfluidic device
US6724612B2 (en) 2002-07-09 2004-04-20 Honeywell International Inc. Relative humidity sensor with integrated signal conditioning
KR100480273B1 (ko) * 2002-11-07 2005-04-07 삼성전자주식회사 실리콘-유리 양극 접합 기술을 이용한 광섬유 블록의 제조방법
JP2004190977A (ja) * 2002-12-12 2004-07-08 Sony Corp 熱輸送装置、熱輸送装置の製造方法及び電子デバイス
RU2238249C2 (ru) * 2003-03-21 2004-10-20 Открытое акционерное общество Арзамасское научно-производственное предприятие "Темп-Авиа" Способ герметичного соединения стеклокерамики с металлической деталью
US7217582B2 (en) 2003-08-29 2007-05-15 Rochester Institute Of Technology Method for non-damaging charge injection and a system thereof
US7287328B2 (en) 2003-08-29 2007-10-30 Rochester Institute Of Technology Methods for distributed electrode injection
US8529724B2 (en) * 2003-10-01 2013-09-10 The Charles Stark Draper Laboratory, Inc. Anodic bonding of silicon carbide to glass
US8581308B2 (en) 2004-02-19 2013-11-12 Rochester Institute Of Technology High temperature embedded charge devices and methods thereof
KR100821413B1 (ko) * 2004-03-23 2008-04-11 가시오게산키 가부시키가이샤 적층구조 및 그 제조방법
US7115182B2 (en) * 2004-06-15 2006-10-03 Agency For Science, Technology And Research Anodic bonding process for ceramics
US20060269847A1 (en) * 2005-05-25 2006-11-30 International Business Machines Corporaton Binding of hard pellicle structure to mask blank and method
JP2007281062A (ja) * 2006-04-04 2007-10-25 Hitachi Ltd 電子部品接合体、それを用いた電子回路モジュールおよびその製造方法
US20070249098A1 (en) * 2006-04-21 2007-10-25 Raymond Charles Cady Bonding plate mechanism for use in anodic bonding
EP3318531B1 (en) * 2007-02-28 2020-05-06 Waters Technologies Corporation Liquid-chromatography apparatus having diffusion-bonded titanium components
EP2023121A1 (en) * 2007-07-06 2009-02-11 Bp Oil International Limited Optical cell
US8402831B2 (en) * 2009-03-05 2013-03-26 The Board Of Trustees Of The Leland Standford Junior University Monolithic integrated CMUTs fabricated by low-temperature wafer bonding
JP2011049324A (ja) * 2009-08-26 2011-03-10 Seiko Instruments Inc 陽極接合方法、及び圧電振動子の製造方法
US9873939B2 (en) * 2011-09-19 2018-01-23 The Regents Of The University Of Michigan Microfluidic device and method using double anodic bonding
US20130199831A1 (en) * 2012-02-06 2013-08-08 Christopher Morris Electromagnetic field assisted self-assembly with formation of electrical contacts
US8895362B2 (en) 2012-02-29 2014-11-25 Corning Incorporated Methods for bonding material layers to one another and resultant apparatus
US9220852B2 (en) 2012-04-10 2015-12-29 Boehringer Ingelheim Microparts Gmbh Method for producing trench-like depressions in the surface of a wafer
US9154138B2 (en) 2013-10-11 2015-10-06 Palo Alto Research Center Incorporated Stressed substrates for transient electronic systems
CA2948979A1 (en) 2014-05-14 2015-11-19 University Of Limerick Microfluidic devices that include channels that are slidable relative to each other and methods of use thereof
EP3218922B1 (en) 2014-11-14 2023-06-07 Danmarks Tekniske Universitet A system for extracting and analyising including a device for extracting volatile species from a liquid
US9780044B2 (en) 2015-04-23 2017-10-03 Palo Alto Research Center Incorporated Transient electronic device with ion-exchanged glass treated interposer
US9577047B2 (en) 2015-07-10 2017-02-21 Palo Alto Research Center Incorporated Integration of semiconductor epilayers on non-native substrates
US10012250B2 (en) 2016-04-06 2018-07-03 Palo Alto Research Center Incorporated Stress-engineered frangible structures
US10026579B2 (en) 2016-07-26 2018-07-17 Palo Alto Research Center Incorporated Self-limiting electrical triggering for initiating fracture of frangible glass
US10224297B2 (en) 2016-07-26 2019-03-05 Palo Alto Research Center Incorporated Sensor and heater for stimulus-initiated fracture of a substrate
DE102016116499B4 (de) * 2016-09-02 2022-06-15 Infineon Technologies Ag Verfahren zum Bilden von Halbleiterbauelementen und Halbleiterbauelemente
US10903173B2 (en) 2016-10-20 2021-01-26 Palo Alto Research Center Incorporated Pre-conditioned substrate
US10026651B1 (en) 2017-06-21 2018-07-17 Palo Alto Research Center Incorporated Singulation of ion-exchanged substrates
IT201700103511A1 (it) * 2017-09-15 2019-03-15 St Microelectronics Srl Dispositivo microelettronico dotato di connessioni protette e relativo processo di fabbricazione
US10626048B2 (en) 2017-12-18 2020-04-21 Palo Alto Research Center Incorporated Dissolvable sealant for masking glass in high temperature ion exchange baths
US10717669B2 (en) 2018-05-16 2020-07-21 Palo Alto Research Center Incorporated Apparatus and method for creating crack initiation sites in a self-fracturing frangible member
US11107645B2 (en) 2018-11-29 2021-08-31 Palo Alto Research Center Incorporated Functionality change based on stress-engineered components
US10947150B2 (en) 2018-12-03 2021-03-16 Palo Alto Research Center Incorporated Decoy security based on stress-engineered substrates
US10969205B2 (en) 2019-05-03 2021-04-06 Palo Alto Research Center Incorporated Electrically-activated pressure vessels for fracturing frangible structures
US12013043B2 (en) 2020-12-21 2024-06-18 Xerox Corporation Triggerable mechanisms and fragment containment arrangements for self-destructing frangible structures and sealed vessels
US11904986B2 (en) 2020-12-21 2024-02-20 Xerox Corporation Mechanical triggers and triggering methods for self-destructing frangible structures and sealed vessels

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2567877A (en) * 1947-07-11 1951-09-11 Ment Jack De Electrochemical bonding of aluminum with other materials
US3256598A (en) * 1963-07-25 1966-06-21 Martin Marietta Corp Diffusion bonding

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017006218A1 (fr) * 2015-07-06 2017-01-12 Cartier International Ag Procédé de fixation par assemblage anodique
WO2017006219A1 (fr) * 2015-07-06 2017-01-12 Cartier International Ag Procédé de fixation par assemblage anodique
US10788793B2 (en) 2015-07-06 2020-09-29 Sy & Se Sa Attachment method using anodic bonding

Also Published As

Publication number Publication date
NL6606217A (enExample) 1966-11-07
DE1665042A1 (de) 1970-10-08
NO119844B (enExample) 1970-07-13
GB1138401A (en) 1969-01-01
CH451273A (de) 1968-05-15
JPS5328747B1 (enExample) 1978-08-16
IL25656A (en) 1970-09-17
NL153720B (nl) 1977-06-15
DK127988B (da) 1974-02-11
FR1478918A (fr) 1967-04-28
BR6679299D0 (pt) 1973-08-09
US3397278A (en) 1968-08-13
SE351518B (enExample) 1972-11-27

Similar Documents

Publication Publication Date Title
JPS4313212Y1 (enExample)
BE675324A (enExample)
JPS4330305Y1 (enExample)
JPS4319733Y1 (enExample)
JPS435658Y1 (enExample)
AU5279364A (enExample)
JPS4310628Y1 (enExample)
JPS4311054Y1 (enExample)
JPS437277Y1 (enExample)
BE672185A (enExample)
BE674324A (enExample)
BE674176A (enExample)
BE674626A (enExample)
BE673418A (enExample)
NL6516783A (enExample)
BE674646A (enExample)
BE673203A (enExample)
LU50985A1 (enExample)
BE674667A (enExample)
BE673884A (enExample)
BE680529A (enExample)
BE674613A (enExample)
BE672967A (enExample)
BE674569A (enExample)
BE665429A (enExample)

Legal Events

Date Code Title Description
RE Patent lapsed

Owner name: P.R. MALLORY & CO. INC.

Effective date: 19850504