AU668925B2 - Improved method for isolating SiO2 layers from PZT, PLZT, and platinum layers - Google Patents

Improved method for isolating SiO2 layers from PZT, PLZT, and platinum layers Download PDF

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Publication number
AU668925B2
AU668925B2 AU37745/93A AU3774593A AU668925B2 AU 668925 B2 AU668925 B2 AU 668925B2 AU 37745/93 A AU37745/93 A AU 37745/93A AU 3774593 A AU3774593 A AU 3774593A AU 668925 B2 AU668925 B2 AU 668925B2
Authority
AU
Australia
Prior art keywords
layer
sio
plzt
pzt
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
AU37745/93A
Other languages
English (en)
Other versions
AU3774593A (en
Inventor
Jeff Allen Bullington
Joseph Tate Evans Jr.
Carl Elijah Montross Jr.
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiant Technologies Inc
Original Assignee
Radiant Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiant Technologies Inc filed Critical Radiant Technologies Inc
Publication of AU3774593A publication Critical patent/AU3774593A/en
Application granted granted Critical
Publication of AU668925B2 publication Critical patent/AU668925B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H3/00—Mechanisms for operating contacts
    • H01H3/02—Operating parts, i.e. for operating driving mechanism by a mechanical force external to the switch
    • H01H3/14—Operating parts, i.e. for operating driving mechanism by a mechanical force external to the switch adapted for operation by a part of the human body other than the hand, e.g. by foot
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/43—Electric condenser making
    • Y10T29/435—Solid dielectric type

Landscapes

  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AU37745/93A 1992-03-03 1993-02-18 Improved method for isolating SiO2 layers from PZT, PLZT, and platinum layers Ceased AU668925B2 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US07/845,064 US5212620A (en) 1992-03-03 1992-03-03 Method for isolating SiO2 layers from PZT, PLZT, and platinum layers
US845064 1992-03-03
PCT/US1993/001469 WO1993018530A1 (en) 1992-03-03 1993-02-18 Improved method for isolating sio2 layers from pzt, plzt, and platinum layers

Publications (2)

Publication Number Publication Date
AU3774593A AU3774593A (en) 1993-10-05
AU668925B2 true AU668925B2 (en) 1996-05-23

Family

ID=25294307

Family Applications (1)

Application Number Title Priority Date Filing Date
AU37745/93A Ceased AU668925B2 (en) 1992-03-03 1993-02-18 Improved method for isolating SiO2 layers from PZT, PLZT, and platinum layers

Country Status (8)

Country Link
US (1) US5212620A (https=)
EP (1) EP0629312B1 (https=)
JP (1) JPH07504783A (https=)
KR (2) KR100300681B1 (https=)
AU (1) AU668925B2 (https=)
CA (1) CA2129838C (https=)
DE (1) DE69318294T2 (https=)
WO (1) WO1993018530A1 (https=)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2884917B2 (ja) * 1992-06-08 1999-04-19 日本電気株式会社 薄膜キャパシタおよび集積回路
US5514484A (en) * 1992-11-05 1996-05-07 Fuji Xerox Co., Ltd. Oriented ferroelectric thin film
EP0617439B1 (en) * 1993-03-25 2003-01-08 Matsushita Electric Industrial Co., Ltd. Thin film capacitor and method of manufacturing the same
JP3323607B2 (ja) 1993-11-12 2002-09-09 株式会社日立製作所 半導体記憶装置の製造方法
US5645976A (en) * 1993-10-14 1997-07-08 Matsushita Electronics Corporation Capacitor apparatus and method of manufacture of same
JP3113173B2 (ja) * 1995-06-05 2000-11-27 シャープ株式会社 不揮発性ランダムアクセスメモリ及びその製造方法
US5753945A (en) * 1995-06-29 1998-05-19 Northern Telecom Limited Integrated circuit structure comprising a zirconium titanium oxide barrier layer and method of forming a zirconium titanium oxide barrier layer
DE19605668C1 (de) * 1996-02-15 1997-03-27 Siemens Ag Ferroelektrisches Bauelement und Verfahren zur Herstellung
DE19630110C2 (de) * 1996-07-25 1998-11-19 Siemens Ag Schichtaufbau mit einer ferroelektrischen Schicht und Herstellverfahren
US5864932A (en) * 1996-08-20 1999-02-02 Ramtron International Corporation Partially or completely encapsulated top electrode of a ferroelectric capacitor
US5902131A (en) * 1997-05-09 1999-05-11 Ramtron International Corporation Dual-level metalization method for integrated circuit ferroelectric devices
TW406317B (en) * 1997-06-27 2000-09-21 Siemens Ag Method to produce a barrier-layer in a semiconductor-body and semiconductor component with such a barrier-layer
KR100269306B1 (ko) * 1997-07-31 2000-10-16 윤종용 저온처리로안정화되는금속산화막으로구성된완충막을구비하는집적회로장치및그제조방법
US5923970A (en) * 1997-11-20 1999-07-13 Advanced Technology Materials, Inc. Method of fabricating a ferrolelectric capacitor with a graded barrier layer structure
KR100506513B1 (ko) * 1997-12-27 2007-11-02 주식회사 하이닉스반도체 강유전체 캐패시터 형성 방법
US6509601B1 (en) 1998-07-31 2003-01-21 Samsung Electronics Co., Ltd. Semiconductor memory device having capacitor protection layer and method for manufacturing the same
US6242299B1 (en) 1999-04-01 2001-06-05 Ramtron International Corporation Barrier layer to protect a ferroelectric capacitor after contact has been made to the capacitor electrode
US6642567B1 (en) * 2000-08-31 2003-11-04 Micron Technology, Inc. Devices containing zirconium-platinum-containing materials and methods for preparing such materials and devices
KR20020049875A (ko) * 2000-12-20 2002-06-26 윤종용 반도체 메모리 소자의 강유전체 커패시터 및 그 제조방법
US20100001371A1 (en) * 2007-12-05 2010-01-07 Rohm Co., Ltd. Semiconductor device having capacitor including a high dielectric film and manufacture method of the same
US9846664B2 (en) 2010-07-09 2017-12-19 Cypress Semiconductor Corporation RFID interface and interrupt
US9092582B2 (en) 2010-07-09 2015-07-28 Cypress Semiconductor Corporation Low power, low pin count interface for an RFID transponder
US8723654B2 (en) 2010-07-09 2014-05-13 Cypress Semiconductor Corporation Interrupt generation and acknowledgment for RFID

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5005102A (en) * 1989-06-20 1991-04-02 Ramtron Corporation Multilayer electrodes for integrated circuit capacitors
US5046043A (en) * 1987-10-08 1991-09-03 National Semiconductor Corporation Ferroelectric capacitor and memory cell including barrier and isolation layers
US5070026A (en) * 1989-06-26 1991-12-03 Spire Corporation Process of making a ferroelectric electronic component and product

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5003428A (en) * 1989-07-17 1991-03-26 National Semiconductor Corporation Electrodes for ceramic oxide capacitors
DE4041271C2 (de) * 1989-12-25 1998-10-08 Toshiba Kawasaki Kk Halbleitervorrichtung mit einem ferroelektrischen Kondensator
NL9000602A (nl) * 1990-03-16 1991-10-16 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting met geheugenelementen vormende condensatoren met een ferroelectrisch dielectricum.

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5046043A (en) * 1987-10-08 1991-09-03 National Semiconductor Corporation Ferroelectric capacitor and memory cell including barrier and isolation layers
US5005102A (en) * 1989-06-20 1991-04-02 Ramtron Corporation Multilayer electrodes for integrated circuit capacitors
US5070026A (en) * 1989-06-26 1991-12-03 Spire Corporation Process of making a ferroelectric electronic component and product

Also Published As

Publication number Publication date
CA2129838C (en) 1999-10-26
JPH07504783A (ja) 1995-05-25
KR100300681B1 (https=) 2001-10-22
DE69318294D1 (de) 1998-06-04
AU3774593A (en) 1993-10-05
CA2129838A1 (en) 1993-09-16
EP0629312B1 (en) 1998-04-29
EP0629312A1 (en) 1994-12-21
KR950700598A (ko) 1995-01-16
WO1993018530A1 (en) 1993-09-16
DE69318294T2 (de) 1998-11-26
EP0629312A4 (en) 1995-04-12
US5212620A (en) 1993-05-18

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Legal Events

Date Code Title Description
MK14 Patent ceased section 143(a) (annual fees not paid) or expired