CN1507059A - 改进的存储单元接触部分 - Google Patents
改进的存储单元接触部分 Download PDFInfo
- Publication number
- CN1507059A CN1507059A CNA031557414A CN03155741A CN1507059A CN 1507059 A CN1507059 A CN 1507059A CN A031557414 A CNA031557414 A CN A031557414A CN 03155741 A CN03155741 A CN 03155741A CN 1507059 A CN1507059 A CN 1507059A
- Authority
- CN
- China
- Prior art keywords
- barrier layer
- memory cell
- hydrogen
- plug
- capacitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
Abstract
Description
Claims (12)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/065,166 US6611449B1 (en) | 2002-09-24 | 2002-09-24 | Contact for memory cells |
US10/065,166 | 2002-09-24 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1507059A true CN1507059A (zh) | 2004-06-23 |
CN1282248C CN1282248C (zh) | 2006-10-25 |
Family
ID=27752630
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN03155741.4A Expired - Fee Related CN1282248C (zh) | 2002-09-24 | 2003-09-01 | 改进的存储单元接触部分 |
Country Status (4)
Country | Link |
---|---|
US (1) | US6611449B1 (zh) |
JP (1) | JP4099442B2 (zh) |
CN (1) | CN1282248C (zh) |
DE (1) | DE10344273B4 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101207179B (zh) * | 2006-12-19 | 2012-05-23 | 国际商业机器公司 | 存储器单元及其制造方法 |
CN107591370A (zh) * | 2016-07-07 | 2018-01-16 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件及其形成方法 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1067220C (zh) * | 1994-10-10 | 2001-06-20 | 可尔必思食品工业株式会社 | 制备含乳蛋白质的浓缩型酸性饮料的方法 |
TW571391B (en) * | 2002-12-31 | 2004-01-11 | Nanya Technology Corp | Method for forming bit line |
US6858442B2 (en) * | 2003-02-25 | 2005-02-22 | Infineon Technologies Aktiengesellschaft | Ferroelectric memory integrated circuit with improved reliability |
EP1653514A4 (en) * | 2003-05-27 | 2010-07-21 | Panasonic Corp | SEMICONDUCTOR ELEMENT AND PROCESS FOR ITS MANUFACTURE |
WO2007102214A1 (ja) * | 2006-03-08 | 2007-09-13 | Fujitsu Limited | 半導体装置及びその製造方法 |
US9349849B2 (en) * | 2012-03-28 | 2016-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device including the semiconductor device |
KR102546639B1 (ko) | 2017-11-21 | 2023-06-23 | 삼성전자주식회사 | 반도체 장치 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5789320A (en) * | 1996-04-23 | 1998-08-04 | International Business Machines Corporation | Plating of noble metal electrodes for DRAM and FRAM |
US5866946A (en) * | 1996-05-23 | 1999-02-02 | Kabushiki Kaisha Toshiba | Semiconductor device having a plug for diffusing hydrogen into a semiconductor substrate |
US6320213B1 (en) * | 1997-12-19 | 2001-11-20 | Advanced Technology Materials, Inc. | Diffusion barriers between noble metal electrodes and metallization layers, and integrated circuit and semiconductor devices comprising same |
US6037235A (en) * | 1998-09-14 | 2000-03-14 | Applied Materials, Inc. | Hydrogen anneal for curing defects of silicon/nitride interfaces of semiconductor devices |
US6165873A (en) * | 1998-11-27 | 2000-12-26 | Nec Corporation | Process for manufacturing a semiconductor integrated circuit device |
US6281535B1 (en) * | 1999-01-22 | 2001-08-28 | Agilent Technologies, Inc. | Three-dimensional ferroelectric capacitor structure for nonvolatile random access memory cell |
US6365927B1 (en) * | 2000-04-03 | 2002-04-02 | Symetrix Corporation | Ferroelectric integrated circuit having hydrogen barrier layer |
-
2002
- 2002-09-24 US US10/065,166 patent/US6611449B1/en not_active Expired - Lifetime
-
2003
- 2003-09-01 CN CN03155741.4A patent/CN1282248C/zh not_active Expired - Fee Related
- 2003-09-24 DE DE10344273A patent/DE10344273B4/de not_active Expired - Fee Related
- 2003-09-24 JP JP2003331111A patent/JP4099442B2/ja not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101207179B (zh) * | 2006-12-19 | 2012-05-23 | 国际商业机器公司 | 存储器单元及其制造方法 |
CN107591370A (zh) * | 2016-07-07 | 2018-01-16 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件及其形成方法 |
Also Published As
Publication number | Publication date |
---|---|
CN1282248C (zh) | 2006-10-25 |
US6611449B1 (en) | 2003-08-26 |
DE10344273A1 (de) | 2004-04-22 |
DE10344273B4 (de) | 2005-10-13 |
JP2004119978A (ja) | 2004-04-15 |
JP4099442B2 (ja) | 2008-06-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
C56 | Change in the name or address of the patentee |
Owner name: INFINEON TECHNOLOGIES AG Free format text: FORMER NAME: INFINRONG SCIENCE AND TECHNOLOGY CO., LTD. |
|
CP01 | Change in the name or title of a patent holder |
Address after: Munich, Germany Patentee after: Infineon Technologies AG Address before: Munich, Germany Patentee before: INFINEON TECHNOLOGIES AG |
|
TR01 | Transfer of patent right |
Effective date of registration: 20120914 Address after: Munich, Germany Patentee after: QIMONDA AG Address before: Munich, Germany Patentee before: Infineon Technologies AG |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20151230 Address after: German Berg, Laura Ibiza Patentee after: Infineon Technologies AG Address before: Munich, Germany Patentee before: QIMONDA AG |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20061025 Termination date: 20160901 |
|
CF01 | Termination of patent right due to non-payment of annual fee |