AU2001295994A1 - Catadioptric system and exposure device having this system - Google Patents

Catadioptric system and exposure device having this system

Info

Publication number
AU2001295994A1
AU2001295994A1 AU2001295994A AU9599401A AU2001295994A1 AU 2001295994 A1 AU2001295994 A1 AU 2001295994A1 AU 2001295994 A AU2001295994 A AU 2001295994A AU 9599401 A AU9599401 A AU 9599401A AU 2001295994 A1 AU2001295994 A1 AU 2001295994A1
Authority
AU
Australia
Prior art keywords
exposure device
catadioptric
catadioptric system
exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001295994A
Other languages
English (en)
Inventor
Tomowaki Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of AU2001295994A1 publication Critical patent/AU2001295994A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00Systems with reflecting surfaces, with or without refracting elements
    • G02B17/08Catadioptric systems
    • G02B17/0892Catadioptric systems specially adapted for the UV
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00Systems with reflecting surfaces, with or without refracting elements
    • G02B17/08Catadioptric systems
    • G02B17/0836Catadioptric systems using more than three curved mirrors
    • G02B17/0844Catadioptric systems using more than three curved mirrors off-axis or unobscured systems in which all of the mirrors share a common axis of rotational symmetry
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70225Optical aspects of catadioptric systems, i.e. comprising reflective and refractive elements
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70275Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Lenses (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
AU2001295994A 2000-10-23 2001-10-23 Catadioptric system and exposure device having this system Abandoned AU2001295994A1 (en)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP2000322068 2000-10-23
JP2000-322068 2000-10-23
JP2001-3200 2001-01-11
JP2001003200 2001-01-11
JP2001-309516 2001-10-05
JP2001309516A JP4245286B2 (ja) 2000-10-23 2001-10-05 反射屈折光学系および該光学系を備えた露光装置
PCT/JP2001/009266 WO2002035273A1 (fr) 2000-10-23 2001-10-23 Systeme catadioptrique et dispositif d'exposition pourvu de ce systeme

Publications (1)

Publication Number Publication Date
AU2001295994A1 true AU2001295994A1 (en) 2002-05-06

Family

ID=27345004

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001295994A Abandoned AU2001295994A1 (en) 2000-10-23 2001-10-23 Catadioptric system and exposure device having this system

Country Status (8)

Country Link
US (1) US7030965B2 (ko)
EP (1) EP1336887A4 (ko)
JP (1) JP4245286B2 (ko)
KR (1) KR100799418B1 (ko)
CN (1) CN100460921C (ko)
AU (1) AU2001295994A1 (ko)
TW (1) TW529080B (ko)
WO (1) WO2002035273A1 (ko)

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DE10316428A1 (de) * 2003-04-08 2004-10-21 Carl Zeiss Smt Ag Katadioptrisches Reduktionsobjektiv
KR101547077B1 (ko) 2003-04-09 2015-08-25 가부시키가이샤 니콘 노광 방법 및 장치, 그리고 디바이스 제조 방법
KR101516140B1 (ko) * 2003-05-06 2015-05-04 가부시키가이샤 니콘 투영 광학계, 노광 장치 및 노광 방법
US7348575B2 (en) * 2003-05-06 2008-03-25 Nikon Corporation Projection optical system, exposure apparatus, and exposure method
JP4706171B2 (ja) * 2003-10-24 2011-06-22 株式会社ニコン 反射屈折投影光学系、露光装置及び露光方法
CN1307456C (zh) * 2003-05-23 2007-03-28 佳能株式会社 投影光学系统、曝光装置及器件的制造方法
US7085075B2 (en) * 2003-08-12 2006-08-01 Carl Zeiss Smt Ag Projection objectives including a plurality of mirrors with lenses ahead of mirror M3
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TW201809801A (zh) 2003-11-20 2018-03-16 日商尼康股份有限公司 光學照明裝置、曝光裝置、曝光方法、以及元件製造方法
US7466489B2 (en) * 2003-12-15 2008-12-16 Susanne Beder Projection objective having a high aperture and a planar end surface
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US7463422B2 (en) * 2004-01-14 2008-12-09 Carl Zeiss Smt Ag Projection exposure apparatus
US20080151364A1 (en) 2004-01-14 2008-06-26 Carl Zeiss Smt Ag Catadioptric projection objective
CN102207608B (zh) * 2004-01-14 2013-01-02 卡尔蔡司Smt有限责任公司 反射折射投影物镜
TW201809727A (zh) 2004-02-06 2018-03-16 日商尼康股份有限公司 偏光變換元件
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US7324185B2 (en) 2005-03-04 2008-01-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
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JP2006309220A (ja) 2005-04-29 2006-11-09 Carl Zeiss Smt Ag 投影対物レンズ
US8248577B2 (en) 2005-05-03 2012-08-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1881521B1 (en) 2005-05-12 2014-07-23 Nikon Corporation Projection optical system, exposure apparatus and exposure method
DE102005024290A1 (de) * 2005-05-27 2006-11-30 Carl Zeiss Smt Ag Abbildungssystem, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage
US20090115986A1 (en) * 2005-06-02 2009-05-07 Carl Zeiss Smt Ag Microlithography projection objective
EP1746463A2 (de) 2005-07-01 2007-01-24 Carl Zeiss SMT AG Verfahren zum Korrigieren eines lithographischen Projektionsobjektivs und derartiges Projektionsobjektiv
US7738188B2 (en) * 2006-03-28 2010-06-15 Carl Zeiss Smt Ag Projection objective and projection exposure apparatus including the same
US7920338B2 (en) 2006-03-28 2011-04-05 Carl Zeiss Smt Gmbh Reduction projection objective and projection exposure apparatus including the same
EP1852745A1 (en) * 2006-05-05 2007-11-07 Carl Zeiss SMT AG High-NA projection objective
EP1890191A1 (en) 2006-08-14 2008-02-20 Carl Zeiss SMT AG Catadioptric projection objective with pupil mirror
WO2008087827A1 (ja) * 2007-01-16 2008-07-24 Nikon Corporation 結像光学系、露光装置、およびデバイス製造方法
US7929114B2 (en) 2007-01-17 2011-04-19 Carl Zeiss Smt Gmbh Projection optics for microlithography
JP5165700B2 (ja) 2007-02-28 2013-03-21 カール・ツァイス・エスエムティー・ゲーエムベーハー 瞳補正を有する反射屈折投影対物系
US20080259304A1 (en) * 2007-04-20 2008-10-23 Asml Netherlands B.V. Lithographic apparatus and method
JP5267029B2 (ja) 2007-10-12 2013-08-21 株式会社ニコン 照明光学装置、露光装置及びデバイスの製造方法
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JP5567098B2 (ja) * 2012-10-31 2014-08-06 カール・ツァイス・エスエムティー・ゲーエムベーハー 瞳補正を有する反射屈折投影対物系
DE102013105586B4 (de) * 2013-05-30 2023-10-12 Carl Zeiss Ag Vorrichtung zur Abbildung einer Probe
CN104062746B (zh) * 2014-06-23 2016-08-24 中国科学院光电技术研究所 一种大数值孔径的折反射浸没投影光学系统
US9424388B2 (en) * 2014-12-17 2016-08-23 International Business Machines Corporation Dividing lithography exposure fields to improve semiconductor fabrication
CN105807410B (zh) * 2014-12-31 2018-11-09 上海微电子装备(集团)股份有限公司 一种基于高数值孔径的折反射式投影物镜
JP2015132843A (ja) * 2015-03-02 2015-07-23 株式会社ニコン 投影光学系、露光装置、露光方法、およびデバイス製造方法
JP6358242B2 (ja) * 2015-11-30 2018-07-18 株式会社ニコン 露光装置、露光方法、デバイス製造方法およびパターン形成方法
JP2016136273A (ja) * 2016-03-07 2016-07-28 株式会社ニコン 投影光学系、露光装置、露光方法、およびデバイス製造方法
CN108152940B (zh) * 2016-12-05 2021-04-27 佳能株式会社 反射折射光学系统、照明光学系统、曝光装置
JP2018010303A (ja) * 2017-08-03 2018-01-18 株式会社ニコン 露光装置およびデバイス製造方法
CN107582020B (zh) * 2017-10-20 2019-05-31 视微影像(河南)科技有限公司 一种眼科成像诊断系统
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Also Published As

Publication number Publication date
WO2002035273A1 (fr) 2002-05-02
EP1336887A1 (en) 2003-08-20
CN100460921C (zh) 2009-02-11
US7030965B2 (en) 2006-04-18
JP4245286B2 (ja) 2009-03-25
EP1336887A4 (en) 2008-07-09
TW529080B (en) 2003-04-21
JP2002277742A (ja) 2002-09-25
CN1535392A (zh) 2004-10-06
US20040130806A1 (en) 2004-07-08
KR20030045130A (ko) 2003-06-09
KR100799418B1 (ko) 2008-01-30

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