AU2001274180A1 - Photosensitive composition for making photoresist - Google Patents

Photosensitive composition for making photoresist

Info

Publication number
AU2001274180A1
AU2001274180A1 AU2001274180A AU7418001A AU2001274180A1 AU 2001274180 A1 AU2001274180 A1 AU 2001274180A1 AU 2001274180 A AU2001274180 A AU 2001274180A AU 7418001 A AU7418001 A AU 7418001A AU 2001274180 A1 AU2001274180 A1 AU 2001274180A1
Authority
AU
Australia
Prior art keywords
photosensitive composition
making photoresist
photoresist
making
photosensitive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001274180A
Other languages
English (en)
Inventor
Mathias Destarac
Evelyne Prat
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rhodia Chimie SAS
Original Assignee
Rhodia Chimie SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rhodia Chimie SAS filed Critical Rhodia Chimie SAS
Publication of AU2001274180A1 publication Critical patent/AU2001274180A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F293/00—Macromolecular compounds obtained by polymerisation on to a macromolecule having groups capable of inducing the formation of new polymer chains bound exclusively at one or both ends of the starting macromolecule
    • C08F293/005—Macromolecular compounds obtained by polymerisation on to a macromolecule having groups capable of inducing the formation of new polymer chains bound exclusively at one or both ends of the starting macromolecule using free radical "living" or "controlled" polymerisation, e.g. using a complexing agent
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2438/00—Living radical polymerisation
    • C08F2438/03—Use of a di- or tri-thiocarbonylthio compound, e.g. di- or tri-thioester, di- or tri-thiocarbamate, or a xanthate as chain transfer agent, e.g . Reversible Addition Fragmentation chain Transfer [RAFT] or Macromolecular Design via Interchange of Xanthates [MADIX]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Graft Or Block Polymers (AREA)
AU2001274180A 2000-06-05 2001-06-01 Photosensitive composition for making photoresist Abandoned AU2001274180A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR0007145A FR2809829B1 (fr) 2000-06-05 2000-06-05 Nouvelle composition photosensible pour la fabrication de photoresist
FR0007145 2000-06-05
PCT/FR2001/001708 WO2001095034A1 (fr) 2000-06-05 2001-06-01 Composition photosensible pour la fabrication de photoresist

Publications (1)

Publication Number Publication Date
AU2001274180A1 true AU2001274180A1 (en) 2001-12-17

Family

ID=8850953

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001274180A Abandoned AU2001274180A1 (en) 2000-06-05 2001-06-01 Photosensitive composition for making photoresist

Country Status (9)

Country Link
US (1) US6953649B2 (fr)
EP (1) EP1311907A1 (fr)
JP (1) JP3634843B2 (fr)
KR (1) KR100502527B1 (fr)
AU (1) AU2001274180A1 (fr)
CA (1) CA2408497A1 (fr)
FR (1) FR2809829B1 (fr)
MX (1) MXPA02011900A (fr)
WO (1) WO2001095034A1 (fr)

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JP4102032B2 (ja) * 2001-03-12 2008-06-18 富士フイルム株式会社 ポジ型レジスト組成物
JP4067284B2 (ja) * 2001-03-12 2008-03-26 富士フイルム株式会社 ポジ型レジスト組成物
TWI297809B (fr) * 2001-10-24 2008-06-11 Toyo Boseki
FR2848556B1 (fr) 2002-12-13 2006-06-16 Bio Merieux Procede de polymerisation radicalaire controlee
ATE370975T1 (de) 2003-06-26 2007-09-15 Jsr Corp Photoresistpolymerzusammensetzungen
JP2007522262A (ja) 2003-06-26 2007-08-09 シミックス・テクノロジーズ・インコーポレイテッド フォトレジストポリマー
US7696292B2 (en) * 2003-09-22 2010-04-13 Commonwealth Scientific And Industrial Research Organisation Low-polydispersity photoimageable acrylic polymers, photoresists and processes for microlithography
KR100599081B1 (ko) 2004-05-27 2006-07-13 삼성전자주식회사 포토레지스트 조성물 및 이를 사용한 패턴 형성방법
US7358035B2 (en) * 2005-06-23 2008-04-15 International Business Machines Corporation Topcoat compositions and methods of use thereof
KR20080032098A (ko) * 2005-08-12 2008-04-14 라이온 가부시키가이샤 나노 평활성과 에칭 내성을 가지는 포토레지스트 폴리머 및레지스트 조성물
US8029969B2 (en) 2007-05-14 2011-10-04 Taiwan Semiconductor Manufacturing Company, Ltd. Material and method for photolithography
JP5243738B2 (ja) * 2007-06-26 2013-07-24 国立大学法人豊橋技術科学大学 光分解を利用した高分子ナノ粒子の製造法
KR101580854B1 (ko) * 2008-09-05 2015-12-30 제이에스알 가부시끼가이샤 경화성 수지 조성물, 수지 경화막을 형성하기 위한 세트, 보호막 및 보호막의 형성 방법
JP5206255B2 (ja) * 2008-09-08 2013-06-12 Ｊｓｒ株式会社 新規重合体及びその製造方法
EP2189846B1 (fr) * 2008-11-19 2015-04-22 Rohm and Haas Electronic Materials LLC Procédé de photolithographie ultilisant une composition de photoréserve contenant un copolymère à blocs
FR3008986B1 (fr) 2013-07-25 2016-12-30 Arkema France Procede de controle de la periode caracterisant la morphologie obtenue a partir d'un melange de copolymere a blocs et de (co) polymeres de l'un des blocs
EP2829567B1 (fr) * 2013-07-25 2017-03-15 Arkema France Procédé pour commander la période de caractérisation de la morphologie obtenue à partir d'un mélange de copolymères séquencés et de (co)polymères d'un des blocs
EP3078693B1 (fr) 2013-12-06 2021-01-27 LG Chem, Ltd. Copolymère bloc
CN105980342B (zh) 2013-12-06 2019-02-15 株式会社Lg化学 单体和嵌段共聚物
WO2015084133A1 (fr) 2013-12-06 2015-06-11 주식회사 엘지화학 Copolymère bloc
JP6334706B2 (ja) 2013-12-06 2018-05-30 エルジー・ケム・リミテッド ブロック共重合体
EP3078690B1 (fr) 2013-12-06 2021-01-27 LG Chem, Ltd. Copolymère bloc
WO2015084124A1 (fr) 2013-12-06 2015-06-11 주식회사 엘지화학 Copolymère bloc
EP3078694B1 (fr) 2013-12-06 2021-01-27 LG Chem, Ltd. Copolymère bloc
US10227436B2 (en) 2013-12-06 2019-03-12 Lg Chem, Ltd. Block copolymer
JP6419820B2 (ja) 2013-12-06 2018-11-07 エルジー・ケム・リミテッド ブロック共重合体
JP6483695B2 (ja) 2013-12-06 2019-03-13 エルジー・ケム・リミテッド ブロック共重合体
WO2015084126A1 (fr) 2013-12-06 2015-06-11 주식회사 엘지화학 Copolymère bloc
EP3101043B1 (fr) 2013-12-06 2021-01-27 LG Chem, Ltd. Copolymère bloc
JP6402867B2 (ja) 2013-12-06 2018-10-10 エルジー・ケム・リミテッド ブロック共重合体
EP3078688B1 (fr) 2013-12-06 2020-03-04 LG Chem, Ltd. Copolymère bloc
JP6532941B2 (ja) 2014-09-30 2019-06-19 エルジー・ケム・リミテッド ブロック共重合体
JP6394798B2 (ja) 2014-09-30 2018-09-26 エルジー・ケム・リミテッド ブロック共重合体
JP6637495B2 (ja) 2014-09-30 2020-01-29 エルジー・ケム・リミテッド パターン化基板の製造方法
US10633533B2 (en) 2014-09-30 2020-04-28 Lg Chem, Ltd. Block copolymer
EP3214102B1 (fr) 2014-09-30 2022-01-05 LG Chem, Ltd. Copolymère bloc
WO2016053010A1 (fr) 2014-09-30 2016-04-07 주식회사 엘지화학 Copolymère séquencé
WO2016053007A1 (fr) 2014-09-30 2016-04-07 주식회사 엘지화학 Procédé de fabrication d'un substrat à motifs
US10287429B2 (en) 2014-09-30 2019-05-14 Lg Chem, Ltd. Block copolymer
US10703897B2 (en) 2014-09-30 2020-07-07 Lg Chem, Ltd. Block copolymer
US10240035B2 (en) 2014-09-30 2019-03-26 Lg Chem, Ltd. Block copolymer
WO2016088777A1 (fr) * 2014-12-02 2016-06-09 三菱化学株式会社 Composition durcissable et film
CN110099938B (zh) * 2016-12-22 2021-01-15 3M创新有限公司 可交联聚合物材料和交联聚合物材料

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US4689289A (en) * 1986-04-30 1987-08-25 General Electric Company Block polymer compositions
US5071731A (en) * 1990-04-10 1991-12-10 E. I. Du Pont De Nemours And Company Aqueous processable photosensitive element with an elastomeric layer
US5698361A (en) * 1991-10-07 1997-12-16 Fuji Photo Film Co., Ltd. Photosensitive composition
US5368976A (en) * 1992-03-27 1994-11-29 Japan Synthetic Rubber Co., Ltd. Pigment-dispersed color-filter composition comprising an alkali-soluble block copolymer as a binder
DE69322946T2 (de) * 1992-11-03 1999-08-12 Ibm Photolackzusammensetzung
JP3203995B2 (ja) * 1993-12-24 2001-09-04 ジェイエスアール株式会社 感放射線性樹脂組成物
KR100195583B1 (ko) * 1997-04-08 1999-06-15 박찬구 양성 포토레지스트 제조용 공중합체 및 이를 함유하는 화학증폭형 양성 포토레지스트 조성물
FR2764892B1 (fr) * 1997-06-23 2000-03-03 Rhodia Chimie Sa Procede de synthese de polymeres a blocs
JP2003513310A (ja) * 1999-10-26 2003-04-08 コーネル・リサーチ・ファンデーション・インコーポレイテッド 超臨界液体現像性フォトレジストとしてのブロックコポリマーの使用
JP4255100B2 (ja) * 2001-04-06 2009-04-15 富士フイルム株式会社 ＡｒＦエキシマレ−ザ−露光用ポジ型フォトレジスト組成物及びそれを用いたパタ−ン形成方法

Also Published As

Publication number Publication date
EP1311907A1 (fr) 2003-05-21
CA2408497A1 (fr) 2001-12-13
KR20030076227A (ko) 2003-09-26
JP3634843B2 (ja) 2005-03-30
FR2809829B1 (fr) 2002-07-26
KR100502527B1 (ko) 2005-07-20
US6953649B2 (en) 2005-10-11
WO2001095034A1 (fr) 2001-12-13
JP2003536105A (ja) 2003-12-02
FR2809829A1 (fr) 2001-12-07
US20030165769A1 (en) 2003-09-04
MXPA02011900A (es) 2003-04-22

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