MXPA02011900A - Composicion fotosensible para fabricacion de fotorresistente. - Google Patents
Composicion fotosensible para fabricacion de fotorresistente.Info
- Publication number
- MXPA02011900A MXPA02011900A MXPA02011900A MXPA02011900A MXPA02011900A MX PA02011900 A MXPA02011900 A MX PA02011900A MX PA02011900 A MXPA02011900 A MX PA02011900A MX PA02011900 A MXPA02011900 A MX PA02011900A MX PA02011900 A MXPA02011900 A MX PA02011900A
- Authority
- MX
- Mexico
- Prior art keywords
- photosensitive composition
- block
- photoresist
- hydrophobic
- novel
- Prior art date
Links
- 229920002120 photoresistant polymer Polymers 0.000 title abstract 4
- 230000002209 hydrophobic effect Effects 0.000 abstract 3
- 239000012988 Dithioester Substances 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 229920001577 copolymer Polymers 0.000 abstract 1
- 239000012990 dithiocarbamate Substances 0.000 abstract 1
- 150000004659 dithiocarbamates Chemical class 0.000 abstract 1
- 125000005022 dithioester group Chemical group 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- -1 thioesters-thiones Substances 0.000 abstract 1
- 239000012991 xanthate Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F293/00—Macromolecular compounds obtained by polymerisation on to a macromolecule having groups capable of inducing the formation of new polymer chains bound exclusively at one or both ends of the starting macromolecule
- C08F293/005—Macromolecular compounds obtained by polymerisation on to a macromolecule having groups capable of inducing the formation of new polymer chains bound exclusively at one or both ends of the starting macromolecule using free radical "living" or "controlled" polymerisation, e.g. using a complexing agent
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F2438/00—Living radical polymerisation
- C08F2438/03—Use of a di- or tri-thiocarbonylthio compound, e.g. di- or tri-thioester, di- or tri-thiocarbamate, or a xanthate as chain transfer agent, e.g . Reversible Addition Fragmentation chain Transfer [RAFT] or Macromolecular Design via Interchange of Xanthates [MADIX]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Graft Or Block Polymers (AREA)
Abstract
La invencion se refiere a una nueva composicion fotosensible para fotorresistente y a un sistema que comprende un sustrato y un fotorresistente obtenido a partir de la nueva composicion. La composicion fotosensible para fotorresistente comprende un copolimero con bloques hidrofobicos de los cuales al menos un bloque es un bloque hidrofobico capaz de generar un bloque hidrofilico y que comprende en su extremo un grupo seleccionado entre ditioesteres, tioeteres-tionas, ditiocarbamatos y xantatos, y un compuesto fotoactivo capaz de generar bajo el efecto de una radiacion, una especie activa que reacciona con el bloque hidrofobico para generar el bloque hidrofilico.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0007145A FR2809829B1 (fr) | 2000-06-05 | 2000-06-05 | Nouvelle composition photosensible pour la fabrication de photoresist |
PCT/FR2001/001708 WO2001095034A1 (fr) | 2000-06-05 | 2001-06-01 | Composition photosensible pour la fabrication de photoresist |
Publications (1)
Publication Number | Publication Date |
---|---|
MXPA02011900A true MXPA02011900A (es) | 2003-04-22 |
Family
ID=8850953
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MXPA02011900A MXPA02011900A (es) | 2000-06-05 | 2001-06-01 | Composicion fotosensible para fabricacion de fotorresistente. |
Country Status (9)
Country | Link |
---|---|
US (1) | US6953649B2 (es) |
EP (1) | EP1311907A1 (es) |
JP (1) | JP3634843B2 (es) |
KR (1) | KR100502527B1 (es) |
AU (1) | AU2001274180A1 (es) |
CA (1) | CA2408497A1 (es) |
FR (1) | FR2809829B1 (es) |
MX (1) | MXPA02011900A (es) |
WO (1) | WO2001095034A1 (es) |
Families Citing this family (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4102032B2 (ja) * | 2001-03-12 | 2008-06-18 | 富士フイルム株式会社 | ポジ型レジスト組成物 |
JP4067284B2 (ja) * | 2001-03-12 | 2008-03-26 | 富士フイルム株式会社 | ポジ型レジスト組成物 |
TWI297809B (es) * | 2001-10-24 | 2008-06-11 | Toyo Boseki | |
FR2848556B1 (fr) | 2002-12-13 | 2006-06-16 | Bio Merieux | Procede de polymerisation radicalaire controlee |
ATE370975T1 (de) | 2003-06-26 | 2007-09-15 | Jsr Corp | Photoresistpolymerzusammensetzungen |
JP2007522262A (ja) | 2003-06-26 | 2007-08-09 | シミックス・テクノロジーズ・インコーポレイテッド | フォトレジストポリマー |
US7696292B2 (en) * | 2003-09-22 | 2010-04-13 | Commonwealth Scientific And Industrial Research Organisation | Low-polydispersity photoimageable acrylic polymers, photoresists and processes for microlithography |
KR100599081B1 (ko) | 2004-05-27 | 2006-07-13 | 삼성전자주식회사 | 포토레지스트 조성물 및 이를 사용한 패턴 형성방법 |
US7358035B2 (en) * | 2005-06-23 | 2008-04-15 | International Business Machines Corporation | Topcoat compositions and methods of use thereof |
KR20080032098A (ko) * | 2005-08-12 | 2008-04-14 | 라이온 가부시키가이샤 | 나노 평활성과 에칭 내성을 가지는 포토레지스트 폴리머 및레지스트 조성물 |
US8029969B2 (en) | 2007-05-14 | 2011-10-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Material and method for photolithography |
JP5243738B2 (ja) * | 2007-06-26 | 2013-07-24 | 国立大学法人豊橋技術科学大学 | 光分解を利用した高分子ナノ粒子の製造法 |
KR101580854B1 (ko) * | 2008-09-05 | 2015-12-30 | 제이에스알 가부시끼가이샤 | 경화성 수지 조성물, 수지 경화막을 형성하기 위한 세트, 보호막 및 보호막의 형성 방법 |
JP5206255B2 (ja) * | 2008-09-08 | 2013-06-12 | Jsr株式会社 | 新規重合体及びその製造方法 |
EP2189846B1 (en) * | 2008-11-19 | 2015-04-22 | Rohm and Haas Electronic Materials LLC | Process for photolithography applying a photoresist composition comprising a block copolymer |
FR3008986B1 (fr) | 2013-07-25 | 2016-12-30 | Arkema France | Procede de controle de la periode caracterisant la morphologie obtenue a partir d'un melange de copolymere a blocs et de (co) polymeres de l'un des blocs |
EP2829567B1 (en) * | 2013-07-25 | 2017-03-15 | Arkema France | Process for controlling the period characterizing the morphology obtained from a blend of block copolymers and of (co) polymers of one of the blocks |
EP3078693B1 (en) | 2013-12-06 | 2021-01-27 | LG Chem, Ltd. | Block copolymer |
CN105980342B (zh) | 2013-12-06 | 2019-02-15 | 株式会社Lg化学 | 单体和嵌段共聚物 |
WO2015084133A1 (ko) | 2013-12-06 | 2015-06-11 | 주식회사 엘지화학 | 블록 공중합체 |
JP6334706B2 (ja) | 2013-12-06 | 2018-05-30 | エルジー・ケム・リミテッド | ブロック共重合体 |
EP3078690B1 (en) | 2013-12-06 | 2021-01-27 | LG Chem, Ltd. | Block copolymer |
WO2015084124A1 (ko) | 2013-12-06 | 2015-06-11 | 주식회사 엘지화학 | 블록 공중합체 |
EP3078694B1 (en) | 2013-12-06 | 2021-01-27 | LG Chem, Ltd. | Block copolymer |
US10227436B2 (en) | 2013-12-06 | 2019-03-12 | Lg Chem, Ltd. | Block copolymer |
JP6419820B2 (ja) | 2013-12-06 | 2018-11-07 | エルジー・ケム・リミテッド | ブロック共重合体 |
JP6483695B2 (ja) | 2013-12-06 | 2019-03-13 | エルジー・ケム・リミテッド | ブロック共重合体 |
WO2015084126A1 (ko) | 2013-12-06 | 2015-06-11 | 주식회사 엘지화학 | 블록 공중합체 |
EP3101043B1 (en) | 2013-12-06 | 2021-01-27 | LG Chem, Ltd. | Block copolymer |
JP6402867B2 (ja) | 2013-12-06 | 2018-10-10 | エルジー・ケム・リミテッド | ブロック共重合体 |
EP3078688B1 (en) | 2013-12-06 | 2020-03-04 | LG Chem, Ltd. | Block copolymer |
JP6532941B2 (ja) | 2014-09-30 | 2019-06-19 | エルジー・ケム・リミテッド | ブロック共重合体 |
JP6394798B2 (ja) | 2014-09-30 | 2018-09-26 | エルジー・ケム・リミテッド | ブロック共重合体 |
JP6637495B2 (ja) | 2014-09-30 | 2020-01-29 | エルジー・ケム・リミテッド | パターン化基板の製造方法 |
US10633533B2 (en) | 2014-09-30 | 2020-04-28 | Lg Chem, Ltd. | Block copolymer |
EP3214102B1 (en) | 2014-09-30 | 2022-01-05 | LG Chem, Ltd. | Block copolymer |
WO2016053010A1 (ko) | 2014-09-30 | 2016-04-07 | 주식회사 엘지화학 | 블록 공중합체 |
WO2016053007A1 (ko) | 2014-09-30 | 2016-04-07 | 주식회사 엘지화학 | 패턴화 기판의 제조 방법 |
US10287429B2 (en) | 2014-09-30 | 2019-05-14 | Lg Chem, Ltd. | Block copolymer |
US10703897B2 (en) | 2014-09-30 | 2020-07-07 | Lg Chem, Ltd. | Block copolymer |
US10240035B2 (en) | 2014-09-30 | 2019-03-26 | Lg Chem, Ltd. | Block copolymer |
WO2016088777A1 (ja) * | 2014-12-02 | 2016-06-09 | 三菱化学株式会社 | 硬化性組成物及び膜 |
CN110099938B (zh) * | 2016-12-22 | 2021-01-15 | 3M创新有限公司 | 可交联聚合物材料和交联聚合物材料 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4689289A (en) * | 1986-04-30 | 1987-08-25 | General Electric Company | Block polymer compositions |
US5071731A (en) * | 1990-04-10 | 1991-12-10 | E. I. Du Pont De Nemours And Company | Aqueous processable photosensitive element with an elastomeric layer |
US5698361A (en) * | 1991-10-07 | 1997-12-16 | Fuji Photo Film Co., Ltd. | Photosensitive composition |
US5368976A (en) * | 1992-03-27 | 1994-11-29 | Japan Synthetic Rubber Co., Ltd. | Pigment-dispersed color-filter composition comprising an alkali-soluble block copolymer as a binder |
DE69322946T2 (de) * | 1992-11-03 | 1999-08-12 | Ibm | Photolackzusammensetzung |
JP3203995B2 (ja) * | 1993-12-24 | 2001-09-04 | ジェイエスアール株式会社 | 感放射線性樹脂組成物 |
KR100195583B1 (ko) * | 1997-04-08 | 1999-06-15 | 박찬구 | 양성 포토레지스트 제조용 공중합체 및 이를 함유하는 화학증폭형 양성 포토레지스트 조성물 |
FR2764892B1 (fr) * | 1997-06-23 | 2000-03-03 | Rhodia Chimie Sa | Procede de synthese de polymeres a blocs |
JP2003513310A (ja) * | 1999-10-26 | 2003-04-08 | コーネル・リサーチ・ファンデーション・インコーポレイテッド | 超臨界液体現像性フォトレジストとしてのブロックコポリマーの使用 |
JP4255100B2 (ja) * | 2001-04-06 | 2009-04-15 | 富士フイルム株式会社 | ArFエキシマレ−ザ−露光用ポジ型フォトレジスト組成物及びそれを用いたパタ−ン形成方法 |
-
2000
- 2000-06-05 FR FR0007145A patent/FR2809829B1/fr not_active Expired - Fee Related
-
2001
- 2001-06-01 JP JP2002502523A patent/JP3634843B2/ja not_active Expired - Fee Related
- 2001-06-01 US US10/312,638 patent/US6953649B2/en not_active Expired - Fee Related
- 2001-06-01 EP EP01940668A patent/EP1311907A1/fr not_active Withdrawn
- 2001-06-01 WO PCT/FR2001/001708 patent/WO2001095034A1/fr not_active Application Discontinuation
- 2001-06-01 AU AU2001274180A patent/AU2001274180A1/en not_active Abandoned
- 2001-06-01 CA CA002408497A patent/CA2408497A1/fr not_active Abandoned
- 2001-06-01 KR KR10-2002-7016555A patent/KR100502527B1/ko not_active IP Right Cessation
- 2001-06-01 MX MXPA02011900A patent/MXPA02011900A/es unknown
Also Published As
Publication number | Publication date |
---|---|
EP1311907A1 (fr) | 2003-05-21 |
CA2408497A1 (fr) | 2001-12-13 |
KR20030076227A (ko) | 2003-09-26 |
JP3634843B2 (ja) | 2005-03-30 |
FR2809829B1 (fr) | 2002-07-26 |
KR100502527B1 (ko) | 2005-07-20 |
US6953649B2 (en) | 2005-10-11 |
AU2001274180A1 (en) | 2001-12-17 |
WO2001095034A1 (fr) | 2001-12-13 |
JP2003536105A (ja) | 2003-12-02 |
FR2809829A1 (fr) | 2001-12-07 |
US20030165769A1 (en) | 2003-09-04 |
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