ATE87400T1 - Elektrolumineszente siliciumvorrichtung. - Google Patents

Elektrolumineszente siliciumvorrichtung.

Info

Publication number
ATE87400T1
ATE87400T1 AT88903330T AT88903330T ATE87400T1 AT E87400 T1 ATE87400 T1 AT E87400T1 AT 88903330 T AT88903330 T AT 88903330T AT 88903330 T AT88903330 T AT 88903330T AT E87400 T1 ATE87400 T1 AT E87400T1
Authority
AT
Austria
Prior art keywords
pct
diode
centres
date nov
electroluminescent
Prior art date
Application number
AT88903330T
Other languages
English (en)
Inventor
Keith Gordon Barraclough
David John Robbins
Leigh Trevor Canham
Original Assignee
Secr Defence Brit
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Secr Defence Brit filed Critical Secr Defence Brit
Application granted granted Critical
Publication of ATE87400T1 publication Critical patent/ATE87400T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/826—Materials of the light-emitting regions comprising only Group IV materials
    • H10H20/8262—Materials of the light-emitting regions comprising only Group IV materials characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/014—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/826—Materials of the light-emitting regions comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8586—Means for heat extraction or cooling comprising fluids, e.g. heat-pipes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H10W72/5475—Dispositions of multiple bond wires multiple bond wires connected to common bond pads at both ends of the wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/917—Electroluminescent

Landscapes

  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Device Packages (AREA)
  • Telephone Function (AREA)
  • Electroluminescent Light Sources (AREA)
AT88903330T 1987-05-14 1988-04-25 Elektrolumineszente siliciumvorrichtung. ATE87400T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB878711373A GB8711373D0 (en) 1987-05-14 1987-05-14 Electroluminescent silicon device
EP88903330A EP0368854B1 (de) 1987-05-14 1988-04-25 Elektrolumineszente siliciumvorrichtung
PCT/GB1988/000319 WO1988009060A1 (en) 1987-05-14 1988-04-25 Silicon electroluminescent device

Publications (1)

Publication Number Publication Date
ATE87400T1 true ATE87400T1 (de) 1993-04-15

Family

ID=10617314

Family Applications (1)

Application Number Title Priority Date Filing Date
AT88903330T ATE87400T1 (de) 1987-05-14 1988-04-25 Elektrolumineszente siliciumvorrichtung.

Country Status (8)

Country Link
US (1) US5077143A (de)
EP (1) EP0368854B1 (de)
JP (1) JP2549723B2 (de)
AT (1) ATE87400T1 (de)
CA (1) CA1304488C (de)
DE (1) DE3879705T2 (de)
GB (2) GB8711373D0 (de)
WO (1) WO1988009060A1 (de)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8908509D0 (en) * 1989-04-14 1989-06-01 Secr Defence Substitutional carbon in silicon
JP2513055B2 (ja) * 1990-02-14 1996-07-03 日本電装株式会社 半導体装置の製造方法
DE4139852A1 (de) * 1991-12-03 1993-06-09 Max-Planck-Gesellschaft Zur Foerderung Der Wissenschaften Ev, 3400 Goettingen, De Optische einrichtung mit einem lumineszenten material und verfahren zu ihrer herstellung
US5468683A (en) * 1992-09-25 1995-11-21 U.S. Philips Corporation Method of manufacturing an optoelectronic semiconductor device having a single wire between non-parallel surfaces
EP0650200B1 (de) * 1993-10-20 1999-03-10 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno Elektrolumineszente Festkörpervorrichtung und Verfahren zu ihrer Herstellung
JP3925753B2 (ja) * 1997-10-24 2007-06-06 ソニー株式会社 半導体素子およびその製造方法ならびに半導体発光素子
US6491752B1 (en) * 1999-07-16 2002-12-10 Sumco Oregon Corporation Enhanced n-type silicon material for epitaxial wafer substrate and method of making same
US6545425B2 (en) 2000-05-26 2003-04-08 Exaconnect Corp. Use of a free space electron switch in a telecommunications network
US7064500B2 (en) * 2000-05-26 2006-06-20 Exaconnect Corp. Semi-conductor interconnect using free space electron switch
US6801002B2 (en) * 2000-05-26 2004-10-05 Exaconnect Corp. Use of a free space electron switch in a telecommunications network
US6800877B2 (en) * 2000-05-26 2004-10-05 Exaconnect Corp. Semi-conductor interconnect using free space electron switch
US6407516B1 (en) 2000-05-26 2002-06-18 Exaconnect Inc. Free space electron switch
GB0014042D0 (en) * 2000-06-08 2000-08-02 Univ Surrey A radiation-emissive optoelectric device and a method of making same
WO2002019860A1 (en) * 2000-09-07 2002-03-14 The Glad Products Company End stop for closure device
WO2002062672A1 (en) * 2001-02-08 2002-08-15 The Glad Products Company Closure device
US7017240B2 (en) 2001-02-08 2006-03-28 The Glad Products Company Closure device
KR20030035152A (ko) * 2001-10-30 2003-05-09 주식회사 하이닉스반도체 반도체웨이퍼 제조방법
US6571714B1 (en) * 2001-12-26 2003-06-03 Meggitt Defense Systems Silicon window infrared augmenter
JP4529646B2 (ja) * 2004-11-09 2010-08-25 ソニー株式会社 希土類元素イオンの拡散領域の製造方法および発光素子の製造方法および発光素子
US7816236B2 (en) * 2005-02-04 2010-10-19 Asm America Inc. Selective deposition of silicon-containing films
JP2006216826A (ja) * 2005-02-04 2006-08-17 Sumco Corp Ｓｏｉウェーハの製造方法
CN101536187A (zh) * 2006-10-05 2009-09-16 日立化成工业株式会社 有序排列、大长宽比、高密度的硅纳米线及其制造方法
US20110021011A1 (en) 2009-07-23 2011-01-27 Advanced Technology Materials, Inc. Carbon materials for carbon implantation
JP5051331B1 (ja) * 2011-02-28 2012-10-17 パナソニック株式会社 赤外発光素子の製造方法
GB201114365D0 (en) 2011-08-22 2011-10-05 Univ Surrey Method of manufacture of an optoelectronic device and an optoelectronic device manufactured using the method
KR20200098716A (ko) 2012-02-14 2020-08-20 엔테그리스, 아이엔씨. 주입 빔 및 소스 수명 성능 개선을 위한 탄소 도판트 기체 및 동축류
CN103904207A (zh) * 2014-04-04 2014-07-02 利亚德光电股份有限公司 晶片电路
ITUB20152264A1 (it) 2015-07-17 2017-01-17 St Microelectronics Srl Dispositivo ad emissione di luce in silicio poroso e relativo metodo di fabbricazione
WO2019173945A1 (zh) * 2018-03-12 2019-09-19 中国科学院半导体研究所 直接带隙发光的硅基材料及制备方法、芯片上发光器件
US12464861B2 (en) 2018-05-24 2025-11-04 Photonic Inc. Systems, devices, articles and methods including luminescent local defects in semiconductors with local information states

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3982262A (en) * 1974-04-17 1976-09-21 Karatsjuba Anatoly Prokofievic Semiconductor indicating instrument
US4857803A (en) * 1986-05-21 1989-08-15 Advanced Lighting International Method of producing electroluminescence and electroluminescing lamp

Also Published As

Publication number Publication date
GB8925143D0 (en) 1990-03-14
JPH02503495A (ja) 1990-10-18
WO1988009060A1 (en) 1988-11-17
EP0368854B1 (de) 1993-03-24
DE3879705T2 (de) 1993-09-16
JP2549723B2 (ja) 1996-10-30
DE3879705D1 (de) 1993-04-29
GB2228365A (en) 1990-08-22
US5077143A (en) 1991-12-31
EP0368854A1 (de) 1990-05-23
GB8711373D0 (en) 1987-06-17
CA1304488C (en) 1992-06-30
GB2228365B (en) 1991-04-17

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Legal Events

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UEP Publication of translation of european patent specification
REN Ceased due to non-payment of the annual fee