WO2019173945A1 - 直接带隙发光的硅基材料及制备方法、芯片上发光器件 - Google Patents

直接带隙发光的硅基材料及制备方法、芯片上发光器件 Download PDF

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WO2019173945A1
WO2019173945A1 PCT/CN2018/078711 CN2018078711W WO2019173945A1 WO 2019173945 A1 WO2019173945 A1 WO 2019173945A1 CN 2018078711 W CN2018078711 W CN 2018078711W WO 2019173945 A1 WO2019173945 A1 WO 2019173945A1
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silicon
germanium
atom
based material
light
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PCT/CN2018/078711
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French (fr)
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骆军委
袁林丁
李树深
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中国科学院半导体研究所
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Priority to US16/760,863 priority patent/US20210098651A1/en
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    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/0245—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0054—Processes for devices with an active region comprising only group IV elements
    • H—ELECTRICITY
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/34—Materials of the light emitting region containing only elements of Group IV of the Periodic Table
    • H01L33/343—Materials of the light emitting region containing only elements of Group IV of the Periodic Table characterised by the doping materials
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer

Definitions

  • the invention belongs to the technical field of semiconductors, and in particular relates to a silicon-based material with direct band gap illumination compatible with a microelectronic CMOS process, a preparation method thereof, and a light-emitting silicon-based device.
  • Microelectronics is the cornerstone of the current information industry. For more than half a century, microelectronics technology has been evolving in accordance with Moore's Law, which doubles its integration every 18 months. As transistor sizes approach physical limits, Moore's Law is about to fail.
  • the optoelectronic integration technology integrating microelectronic devices and optoelectronic devices is becoming more and more mature, and it is expected to replace microelectronic technology as the cornerstone of the information industry in the future.
  • the core purpose of silicon-based optoelectronic integration is to integrate optical components including light sources, photodetectors, optical waveguides, and optical modulators on microelectronic chips, and replace optical interconnects with optical interconnects to provide more efficient data transfer capabilities.
  • the direct bandgap energy level of germanium is only 0.15 eV higher than the indirect band gap
  • the researchers have found that when the bulk germanium material or its low-dimensional micro/nano structure is subjected to a certain tensile strain, its band structure It will transform from an indirect bandgap to a direct bandgap to meet the requirements of efficient illumination.
  • a mechanical means such as an STM needle tip is used to bend the suspended enamel sheet, and a tensile strain is generated outside the curved apex to form a direct band gap luminescence.
  • This tensile strain can also be provided by epitaxially growing germanium on a surface of a substrate material having a larger lattice constant.
  • a method for preparing a silicon-based material that is compatible with a direct bandgap illumination of a CMOS process including the steps of:
  • the manner of filling includes ion implantation, electrochemical implantation, and epitaxial growth.
  • the alloy concentration of silicon in the silicon germanium alloy is no more than 50%.
  • a light-emitting silicon-based material which is a tantalum material or a silicon germanium alloy having a direct band gap band structure, and a part of the lattice gap is filled with an inert gas.
  • An atom and/or an atom with a small atomic number is also provided.
  • the luminescent silicon-based material is a crystalline structure having a regular tetrahedral covalent bond character.
  • the crystal structure having a regular tetrahedral covalent bond characteristic is a diamond structure or a biaxially strained diamond structure.
  • the silicon-based material is a bulk material, a thin film material, or a micro-nano structural material.
  • the inert gas atom is ruthenium, and the concentration of the ruthenium atom relative to the ruthenium atom is 9.0% or more; and/or
  • the inert gas atom is ruthenium, and the concentration of the ruthenium atom relative to the ruthenium atom is 1.5% or more; and/or
  • the inert gas atom is argon, and the concentration of the argon atom relative to the ruthenium atom is 0.8% or more; and/or
  • the inert gas atom is ruthenium, and the concentration of the ruthenium atom relative to the ruthenium atom is 0.8% or more.
  • the atom having a small atomic number includes lithium, and the concentration of the number of lithium atoms relative to the ruthenium atom is 3.0% or more.
  • a light emitting silicon based device comprising:
  • Microelectronic chip including silicon microelectronic chip or germanium microelectronic chip;
  • the light-emitting silicon-based material being a germanium material or a silicon germanium alloy having a direct band gap band structure, and a part of the lattice gap position thereof Fill in atoms with inert gas atoms and/or small atomic numbers.
  • the luminescent silicon-based material (cerium or silicon germanium alloy material) of the present invention can realize high quality single crystal on a microelectronic chip compared with the conventional III-V luminescent material integrated on the microelectronic chip using the hybrid integration technology.
  • Epitaxial growth, perfect compatible with microelectronic CMOS process, there is no thermal mismatch problem, can be used to make large-scale integrated light source (light-emitting silicon-based device) on microelectronic chip.
  • the luminescent silicon-based material (cerium or silicon germanium alloy material) of the present invention has a smaller volume of external atoms placed in the germanium lattice than the existing tin-bismuth alloy, and the corresponding solid-melting degree is high, and the external portion to be placed is required.
  • the atomic concentration is small, avoiding lattice defects caused by large lattice mismatch, and it is not easy to introduce harmful impurities that affect luminous efficiency.
  • the present invention passes the atom of the inert gas atom and/or the atomic number of the atomic portion of the ⁇ lattice to a part of the gap, such as an atom of other elements such as lithium.
  • the result is that the lattice volume expands, and the equivalent tensile strain is generated to realize direct bandgap illumination, which overcomes the problem that the mechanical method cannot be applied to large-scale integration on a chip.
  • the method is compatible with the existing silicon-based CMOS process and can be used to fabricate microelectronics. Large-scale integration of light sources on the chip.
  • the luminescent silicon-based material of the present invention has different atomic concentrations, different atomic concentrations, and different band gaps of the materials. Therefore, the corresponding exciton lifetimes of the band-edge transitions are different, and the emitted photon wavelength can also be within a certain range.
  • the infrared band is adjusted to obtain different effects of luminescent or silicon germanium alloy materials to meet actual needs.
  • FIG. 1 is a flow chart showing the steps of a method for preparing a light-emitting silicon-based material according to an embodiment of the present invention
  • FIG. 2A is a schematic structural view of a light-emitting silicon-based device according to a first embodiment of the present invention
  • FIG. 2B is a schematic structural view of a light-emitting silicon-based device according to a second embodiment of the present invention.
  • FIG. 3 is a schematic view showing a germanium crystal structure (Ge 32 Li 1 ) containing a concentration of 3.0% lithium atom according to an embodiment of the present invention
  • FIG. 4 is a schematic view showing a germanium crystal structure (Ge 32 Li 2 ) containing 6.0% lithium atom concentration according to an embodiment of the present invention
  • FIG containing 5 embodiment of the present invention 3.0% atomic concentration of germanium crystal structure of lithium (Ge 32 Li 1) crystal structure and germanium (Ge 32 Li 2) containing a lithium atom concentration of 6.0% pure germanium FCC band projection cloth Schematic diagram of the energy band structure of the Liyuan District;
  • FIG. 6 is a view showing a direct band gap and an indirect band gap level and a band edge optical transition matrix element of a germanium material after a portion of a lattice gap of a germanium material epitaxially grown on a germanium substrate is filled with lithium atoms according to an embodiment of the present invention; Schematic diagram of the relationship with the atomic concentration placed;
  • FIG. 7 is a view showing a direct band gap and an indirect band gap level of a germanium material and a band edge optical transition matrix element after a partial lattice gap of a germanium material epitaxially grown on a germanium substrate is filled with germanium atoms according to an embodiment of the present invention; Schematic diagram of the relationship with the atomic concentration placed;
  • FIG. 8 is a view showing a direct band gap and an indirect band gap level of a tantalum material and a band edge optical transition matrix element after a part of a lattice gap of a germanium material epitaxially grown on a germanium substrate is filled with germanium atoms according to an embodiment of the present invention; Schematic diagram of the relationship with the atomic concentration placed;
  • FIG. 9 is a view showing a direct band gap and an indirect band gap level and a band edge optical transition matrix element of a germanium material after a portion of a lattice gap of a germanium material epitaxially grown on a germanium substrate is filled with an argon atom according to an embodiment of the present invention;
  • FIG. 10 is a view showing a direct band gap and an indirect band gap level of a germanium material and a band edge optical transition matrix element after a partial lattice gap of a germanium material epitaxially grown on a germanium substrate is filled with germanium atoms according to an embodiment of the present invention;
  • the present invention provides a direct bandgap-emitting silicon-based material ( ⁇ or silicon germanium alloy material) compatible with a CMOS process and a preparation method thereof for obtaining high luminous efficiency and impurity concentration.
  • a direct bandgap-emitting silicon-based material ⁇ or silicon germanium alloy material
  • Low, low-impact, direct-bandgap luminescent silicon-based materials provide a new solution for on-chip integrated light sources (light-emitting silicon-based devices, or on-chip light-emitting devices) required for silicon-based or germanium-based optoelectronic integration technologies Program.
  • the core idea of the present invention is to fill a partial lattice of a silicon-based material (cerium or silicon germanium alloy material) by a material growth method such as ion implantation or electrochemical implantation, in which an atom of an inert gas atom and/or a small atomic number is filled.
  • the position of the gap causes the lattice volume to expand to produce an effect equivalent to the tensile strain, thereby realizing the transition of the band structure of the tantalum or silicon germanium alloy from the indirect band gap to the direct band gap.
  • the lattice structure, electronic structure, and optical properties of the luminescent iridium material epitaxially grown on a microelectronic chip were simulated using a first-principles density functional theory method.
  • the calculation results show that the method of inserting external atoms in the lattice gap can make the lattice of the crucible expand to volume, so that the band structure of the crucible changes from the indirect band gap to the direct band gap, and the direct band gap is efficiently illuminated.
  • the calculation result of the band edge optical transition matrix element confirms that the direct bandgap-emitting silicon-based material has the luminous efficiency of the III-V direct bandgap material such as the shoulder InP and GaAs, so it is theoretically verified that the present invention can be obtained.
  • the high-efficiency luminescent direct band gap germanium material or silicon germanium alloy material prepared by the method can be high-quality single crystal epitaxial growth on a silicon chip or a germanium chip, compared with the existing III-V direct band gap wafer and silicon microelectronics.
  • the chip hybrid integration technology enables single-crystal epitaxial growth on a silicon substrate, is perfectly compatible with the microelectronic CMOS process, and has no thermal mismatch problem, and can be used to fabricate a large-scale integrated light source on a chip.
  • the existing method of controlling the direct band gap luminescence of bismuth tin alloy the external atomic number placed in the yttrium lattice is small, the corresponding solid solubility is high, and the atomic concentration required for injection is low, which can reduce the harmful introduction. Impurities and lattice defects, resulting in a more stable and efficient luminescent enamel material.
  • the present invention achieves direct bandgap luminescence of bismuth material by inserting external atoms into a portion of the gap of the ⁇ lattice to generate an equivalent tensile strain, thereby overcoming the mechanical
  • the method cannot be applied to the problem of large-scale integration on a chip.
  • the silicon germanium alloy has similar properties to the germanium material, and can also be used for obtaining a silicon-based material with direct band gap light emission.
  • the method is compatible with existing CMOS processes and can be used to fabricate high-efficiency light-emitting devices integrated on silicon-based or germanium-based microelectronic chips.
  • the high-efficiency luminescent bismuth material or the silicon germanium alloy material of the present invention selectively implants different atom types, and the atomic concentration is different, and the direct band gap width of the material is also different, so the exciton lifetime of the corresponding direct band gap transition is different, and the emitted
  • the photon wavelength can also be adjusted in a range of far-infrared bands to obtain high-efficiency luminescent or silicon germanium alloy materials with different effects to suit different application requirements.
  • the present invention provides a completely new possible solution for a high-efficiency light source that can be integrated on a chip for large-scale integration of silicon-based or germanium-based optoelectronic integration technologies.
  • FIG. 1 is a flow chart of a method for preparing a light-emitting silicon-based material according to an embodiment of the present invention. Includes the following steps:
  • the ruthenium material may be a stereocrystalline structure such as a homomorphic body of a regular tetrahedral covalent bond, and a single crystal ruthenium material of a diamond structure is selected in the embodiment of the present invention.
  • the bulk material refers to a bulk material having a three-dimensional periodicity in a crystal lattice, and may also be a thin film material of tantalum and a low-dimensional micro-nano structure of tantalum, wherein the tantalum material is mature in process, simple in preparation, lower in cost, and suitable for use in Large-scale integration on microelectronic chips.
  • the silicon germanium alloy mainly mixes silicon in a germanium material, and the alloy concentration of silicon is not more than 50.0%. At this time, a small amount of silicon is mixed in the germanium material, and the material can still be converted into an external atom by Direct band gap band structure for direct bandgap illumination with excellent performance.
  • the inert gas atom includes ruthenium, and generally has a concentration of 9.0% or more compared to the number of ruthenium atoms, which can cause ruthenium to become a direct band gap luminescence.
  • the inert gas atoms to be filled are not limited to helium, but may be helium, argon, and helium.
  • the concentration of each inert gas atom relative to the number of helium atoms is 1.5% or more, 0.8% or more, and greater than Equal to 0.8%.
  • atoms with a small atomic number such as atoms with an atomic number less than 10
  • lithium and ruthenium because of their small atomic size, high solid solubility, it is easy to fill the gap position of the ruthenium diamond lattice.
  • silicon and germanium are very good negative electrode materials for lithium batteries. Electrochemical methods can inject a large amount of lithium atoms into silicon and germanium. It has been found that their volume can expand by more than 300%.
  • the band structure of the germanium material changes from an indirect band gap to a direct band gap. Excellent direct bandgap luminescent properties.
  • the lithium atom contains a valence electron, its implantation makes ⁇ an n-type heavily doped, and the Fermi level is located inside the conduction band.
  • lithium is preferably equal to or greater than 3.0% atomic concentration.
  • atoms such as argon and helium in the inert gas atom are generally not mixed with atoms having a small atomic number and are filled in a part of the gap position of the silicon-based material, and the atomic numbers such as ruthenium and osmium are small. Because of the small atomic number, the inert gas atom can be mixed with the atom with a small atomic number to fill the partial gap position of the silicon-based material. For similar reasons, different types of atoms with smaller atomic numbers can also be mixed with each other. Part of the gap position of the silicon-based material, thereby obtaining a silicon-based material with direct band gap luminescence.
  • the method of implanting external atoms at the lattice gap position of the silicon-based material may be introduced in a semiconductor doping process such as an ion implantation or an electrochemical implantation method or in an epitaxial growth process of a silicon-based material.
  • a semiconductor doping process such as an ion implantation or an electrochemical implantation method or in an epitaxial growth process of a silicon-based material.
  • an ion implantation method is selected, that is, an ion implanter is used to accelerate a lithium or germanium ion beam by an electric field in a vacuum to obtain a high-energy lithium or germanium ion beam, and a magnetic field is used to adjust the direction of ion implantation, thereby selecting a specific energy and concentration.
  • the inside of the wafer is ion-implanted, and then annealed to reduce the defect concentration, and an injection layer having luminescent properties is formed on the surface of the silicon-based material.
  • ion implantation has the advantages of low processing temperature, uniform injection over a large area, and easy control of the concentration and depth of the injection.
  • the direct band gap size of the luminescent silicon-based material varies with the type of implanted atom and the concentration of the implanted atom. Therefore, the wavelength of the corresponding lasing emitted light can also be in the far-infrared band.
  • the illuminating silicon-based material can be adjusted within a certain range to obtain different effects, which can adapt to different practical application requirements.
  • a light-emitting silicon-based material which is a germanium material or a silicon germanium alloy having a direct band gap band structure, and a part of the lattice gap is filled therein.
  • An inert gas atom and/or an atom with a small atomic number is further provided.
  • the luminescent silicon-based material may be a ruthenium allomorphic crystal structure characterized by a tetrahedral covalent bond.
  • a bulk ruthenium material of a diamond structure is selected.
  • the selected tantalum bulk material has a three-dimensional periodic lattice structure, and may also be its thin film and low-dimensional micro-nano structure, wherein the tantalum material technology is mature, simple to prepare, lower in cost, and suitable for large-scale integration.
  • the light-emitting efficiency of the light-emitting silicon-based material is close to the III-V direct band gap light-emitting material such as InP and GaAs, and has a direct band gap light-emitting property with high luminous efficiency.
  • silicon germanium alloy that is, to mix silicon material in the germanium material, and the alloy concentration of silicon is not more than 50.0%. At this time, a small amount of silicon is mixed in the germanium material, and the material can still be realized by placing external atoms. Its energy band structure is transformed from an indirect band gap to a direct band gap energy, and can emit light efficiently.
  • the interaction between the electrons of the inert gas atom and the covalent electron of the ruthenium is negligible.
  • the lattice volume of the ruthenium material expands, producing an equivalent strain for the ruthenium material.
  • the band structure is transformed from an indirect band gap to a direct band gap, and has a direct band gap for efficient light emission.
  • ruthenium is selected, and the atomic concentration of ruthenium is 9.0% or more.
  • the inert gas atoms to be filled are not limited to helium, but may be helium, argon and helium.
  • the concentration of each inert gas atom relative to the helium atom ranges from 1.5% or more to 0.8% and greater than or equal to 0.8%.
  • the silicon-based material expands due to the injection of inert gas atoms into its lattice volume, and the silicon-based material can be converted from an indirect band gap material to a direct band gap material, thereby having excellent direct band gap luminescence properties.
  • atoms with a small atomic number such as atoms with an atomic number less than 10, including but not limited to lithium and ruthenium
  • atoms with an atomic number less than 10 including but not limited to lithium and ruthenium
  • a process of injecting a large amount of lithium atoms into silicon and germanium by an electrochemical method has been widely used in the manufacture of lithium batteries in the industry.
  • the band structure of the germanium material changes from an indirect band gap to a direct band gap, and has excellent luminescent properties.
  • FIG. 2A is a schematic structural view of a light-emitting silicon-based device according to a first embodiment of the present invention.
  • the light-emitting silicon-based device includes: a silicon microelectronic chip; a silicon germanium alloy buffer layer on the silicon microelectronic chip; a germanium substrate on the silicon germanium alloy buffer layer; and a light emitting silicon substrate on which the single crystal is epitaxially grown on the silicon microelectronic chip a material on the germanium substrate, the light-emitting silicon-based material being a direct band gap material having a direct band gap energy band structure, wherein a part of the lattice gap is filled with an inert gas atom and/or a small atomic number atom.
  • the light-emitting silicon-based device includes: a germanium microelectronic chip, and a single crystal epitaxially grown on the germanium microelectronic chip.
  • a silicon-based material on the germanium microelectronic chip the light-emitting silicon-based material being a direct band gap material having a direct band gap energy band structure, wherein a part of the lattice gap is filled with an inert gas atom and/or an atom An atom with a small ordinal number.
  • the luminescent silicon-based material can be integrated on a germanium or silicon chip.
  • the embodiment of the invention adopts a microelectronic CMOS chip, and integrates the optical device and the electrical device on the same chip by using the above-mentioned light-emitting silicon-based material compatible with the CMOS process, thereby realizing a large-scale integrated optoelectronic chip, fully utilizing the electronic device and the photon.
  • the respective characteristics of the device greatly improve the computing power of a single chip, significantly reduce system power consumption and heat generation, effectively reduce the process cost, and reduce the size of the system.
  • the deposition method between the microelectronic chip, the silicon germanium alloy buffer layer, the germanium substrate and the light emitting germanium material is atomic layer deposition, plasma enhanced chemical vapor deposition, magnetron sputtering, molecular beam epitaxy or metal organic chemical vapor deposition, One or more of dry oxidation, wet oxidation, and ion implantation.
  • FIG. 3 is a schematic view showing a germanium crystal structure (Ge 32 Li 1 ) containing a concentration of 3.0% of lithium atoms in an embodiment of the present invention.
  • a Li atom is randomly filled in one of the germanium lattices.
  • the gap position FIG. 4 is a schematic diagram of a germanium crystal structure (Ge32Li2) containing 6.0% lithium atom concentration according to an embodiment of the present invention.
  • two Li atoms are filled in according to the requirements of a quasi-random alloy. In the two gap positions of the germanium lattice, as shown in Fig. 3 and Fig.
  • the implantation concentration of Li in Ge 32 Li 1 is 3.0%
  • the lattice constant predicted by the first-principles density functional theory calculation method is The implantation concentration of Li in Ge 32 Li 2 is 6.0%
  • the lattice constant predicted by the first-principles density functional theory calculation method is
  • FIG containing 5 embodiment of the present invention 3.0% atomic concentration of germanium crystal structure of lithium (Ge 32 Li 1) crystal structure and germanium (Ge 32 Li 2) containing a lithium atom concentration of 6.0% pure germanium FCC band projection cloth
  • the energy band structure diagram of the Liyuan area is shown in Fig. 5.
  • the size of the dot in the figure represents the pure ⁇ obtained by respectively projecting the electronic states of the yttrium material containing 3.0% lithium atoms and the yttrium material containing 6.0% lithium atoms.
  • the component value of the Bloch band is shown in Fig. 5.
  • germanium containing 3.0% lithium atoms and germanium materials containing 6.0% lithium atoms are indeed indirect band gap materials, including 6.0.
  • the germanium material of the lithium atom has become a direct band gap material, while the germanium material containing 3.0% lithium atoms has almost the same direct band gap and indirect band gap energy level, and is in the vicinity from the indirect band gap to the direct band gap transition.
  • the material's direct band gap energy level is lower than the indirect band gap energy level, the material is a direct band gap material with excellent luminescence properties; otherwise, the material is an indirect band gap material, and the luminous efficiency is better than the direct band gap.
  • FIG. 6 is a view showing a direct band gap and an indirect band gap level and a band edge optical transition matrix element of a germanium material after a portion of a lattice gap of a germanium material epitaxially grown on a germanium substrate is filled with lithium atoms according to an embodiment of the present invention; Schematic diagram of the relationship between the atomic concentration and the atomic concentration. The biaxial tensile strain occurs in the lattice of the germanium material after the lithium atom is implanted. The plane lattice is not constrained by the germanium substrate, and the lattice becomes larger in the vertical direction.
  • the germanium substrate may be a single crystal germanium or a silicon germanium alloy buffer layer epitaxially grown on a silicon substrate to finally obtain an unstrained single crystal germanium layer.
  • the direct band gap level is smaller than the indirect band gap level, and the band structure changes from indirect band gap to direct band. Gap.
  • the direct band gap energy value of the germanium material corresponding to the above threshold concentration is 0.61 eV. As shown in Fig.
  • the band edge optical transition matrix element between the valence band of the corresponding germanium material and the bottom of the conduction band is at a lithium atom concentration of 3.0%.
  • a transition from zero to 0.20 au occurs nearby.
  • the band edge optical transition matrix elements of the III-V direct bandgap materials such as GaAs and InP are around 0.3 a.u, we have confirmed that the luminescent iridium material of the example of the present invention is a high-efficiency luminescent material with direct band gap luminescence.
  • FIG. 7 is a view showing a direct band gap and an indirect band gap level of a germanium material and a band edge optical transition matrix element after a partial lattice gap of a germanium material epitaxially grown on a germanium substrate is filled with germanium atoms according to an embodiment of the present invention; Schematic diagram of the relationship between the atomic concentration and the atomic concentration. The biaxial tensile strain occurs in the lattice of the germanium material after the germanium atom is placed. The planar lattice is not bound by the germanium substrate, and the lattice becomes larger in the vertical direction.
  • the germanium substrate may be a single crystal germanium or a silicon germanium alloy buffer layer epitaxially grown on a silicon substrate to finally obtain an unstrained single crystal germanium layer.
  • the direct band gap energy level is smaller than the indirect band gap energy level, and the band structure changes from indirect band gap to direct band. Gap.
  • the direct band gap energy value of the germanium material corresponding to the above threshold concentration is 0.71 eV. As shown in Fig.
  • the band edge optical transition matrix element between the valence band of the corresponding germanium material and the bottom of the conduction band is at ⁇ atom concentration 9.0%.
  • the transition from zero to 0.22 au occurred nearby, confirming that the luminescent iridium material of the example of the present invention is a highly efficient luminescent material with direct band gap luminescence.
  • FIG. 8 is a view showing a direct band gap and an indirect band gap level of a tantalum material and a band edge optical transition matrix element after a part of a lattice gap of a germanium material epitaxially grown on a germanium substrate is filled with germanium atoms according to an embodiment of the present invention; Schematic diagram of the relationship between the atomic concentration and the atomic concentration. The biaxial tensile strain occurs in the lattice of the germanium material after the germanium atom is placed. The planar lattice is not bound by the germanium substrate, and the lattice becomes larger in the vertical direction.
  • the germanium substrate may be a single crystal germanium or a silicon germanium alloy buffer layer epitaxially grown on a silicon substrate to finally obtain an unstrained single crystal germanium layer.
  • the direct band gap energy level is smaller than the indirect band gap energy level, and the band structure changes from indirect band gap to direct band. Gap.
  • the direct band gap energy value of the germanium material corresponding to the above threshold concentration is 0.78 eV. As shown in Fig.
  • the band edge optical transition matrix element between the valence band of the corresponding germanium material and the bottom of the conduction band is 1.5% at the germanium atom concentration.
  • the transition from zero to 0.10 au occurred nearby, confirming that the luminescent iridium material of the example of the present invention is a highly efficient luminescent material with direct band gap luminescence.
  • FIG. 9 is a view showing a direct band gap and an indirect band gap level and a band edge optical transition matrix element of a germanium material after a portion of a lattice gap of a germanium material epitaxially grown on a germanium substrate is filled with an argon atom according to an embodiment of the present invention
  • the biaxial tensile strain occurs in the lattice of the germanium material after the germanium atom is placed.
  • the planar lattice is not bound by the germanium substrate, and the lattice becomes larger in the vertical direction.
  • the germanium substrate may be a single crystal germanium or a silicon germanium alloy buffer layer epitaxially grown on a silicon substrate to finally obtain an unstrained single crystal germanium layer.
  • the direct band gap energy level is smaller than the indirect band gap energy level, and the band structure changes from indirect band gap to direct band. Gap.
  • the direct band gap energy value of the germanium material corresponding to the above threshold concentration is 0.78 eV. As shown in Fig.
  • the band edge optical transition matrix element between the valence band of the corresponding germanium material and the bottom of the conduction band is 1.5% at the argon atom concentration.
  • the transition from zero to 0.36 au occurred nearby, confirming that the luminescent enamel material of the example of the present invention is a highly efficient luminescent material with direct band gap luminescence.
  • FIG. 10 is a view showing a direct band gap and an indirect band gap level of a germanium material and a band edge optical transition matrix element after a partial lattice gap of a germanium material epitaxially grown on a germanium substrate is filled with germanium atoms according to an embodiment of the present invention
  • FIG. Schematic diagram of the relationship between the atomic concentration and the atomic concentration.
  • the biaxial tensile strain occurs in the lattice of the germanium material after the germanium atom is placed.
  • the planar lattice is not bound by the germanium substrate, and the lattice becomes larger in the vertical direction.
  • the germanium substrate may be a single crystal germanium or a silicon germanium alloy buffer layer epitaxially grown on a silicon substrate to finally obtain an unstrained single crystal germanium layer.
  • the direct band gap energy level is smaller than the indirect band gap energy level, and the band structure changes from indirect band gap to direct band. Gap.
  • the direct band gap energy value of the germanium material corresponding to the above threshold concentration is 0.63 eV. As shown in Fig.
  • the band edge optical transition matrix element between the valence band of the corresponding germanium material and the bottom of the conduction band is at a germanium atom concentration of 0.8%.
  • the transition from zero to 0.28 au occurred nearby, confirming that the luminescent iridium material of the example of the present invention is a highly efficient luminescent material with direct band gap luminescence.

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Abstract

一种实现兼容CMOS工艺的直接带隙发光的硅基材料及其制备方法，该方法包括步骤：准备硅基材料，所述硅基材料为锗材料或者硅锗合金；在所述硅基材料的部分晶格间隙位置填入惰性气体原子和/或原子序数小的原子达到晶格体积膨胀，以实现其能带结构由间接带隙向直接带隙转变，得到直接带隙发光的硅基材料。此外，还提供了一种发光硅基器件。该制备方法兼容CMOS集成电路工艺，实现锗及硅锗合金材料的直接带隙发光，其发光效率比肩InP和GaAs等III-V族直接带隙材料，为实现硅基或锗基光电子集成技术所需的片上光源提供了一种全新的解决方案。

Description

直接带隙发光的硅基材料及制备方法、芯片上发光器件 技术领域
本发明属于半导体技术领域，具体涉及一种兼容微电子CMOS工艺的直接带隙发光的硅基材料及其制备方法、发光硅基器件。
背景技术
微电子技术是当前信息产业的基石。在过去半个多世纪，微电子技术一直在按照每18个月集成度提高一倍的摩尔定律在发展，随着晶体管尺寸接近物理极限，摩尔定律即将失效。而集成微电子器件与光电子器件的光电子集成技术日益成熟，有望接替微电子技术成为未来信息产业的基石。硅基光电子集成的核心目的是将包括光源、光探测器、光波导、光调制器等光学组件集成在微电子芯片上，用光互连代替金属互连，提供效率更高数据传送能力，突破金属互连的物理极限，显著降低系统功耗，解决由于发热限制集成度提高的问题。但是，硅和锗本身都是不发光的间接带隙材料，无法用于制作集成在芯片上的高效发光器件。目前，未能实现兼容硅基CMOS(互补型金属氧化物半导体)工艺的芯片上光源成为阻碍硅基光电子集成技术发展的主要原因。因此，寻找到一种能够与CMOS工艺相兼容的高效发光材料是实现硅基光电子集成技术的核心问题。
在过去的半个多世纪，研究人员一直在寻找高效的发光硅基材料，报道了许多不同的方法和方案来实现硅基高效发光，每年都有新的研究成果发表在国际顶级期刊上，但至今都没有研制成功可应用的硅基高效发光器件。这其中包括稀土(如铒)掺杂硅材料来实现辐射发光，但是存在单晶硅中的稀土元素的固溶度很低，只有很低比例的稀土杂质具有光学活性等问题，导致硅中的稀土杂质不能成为有效的室温发光中心。还有大量工作研究了多孔硅、硅锗合金、锗锡合金、硅同构异形体、硅量子点、硅和二氧化硅超晶格、硅锗超晶格等系统，希望能够实现硅基发光，但是这些方案都无法实现可实际应用的可集成在芯片上的高效光源。
此外，考虑到锗的直接带隙能级只比间接带隙高0.15eV，研究人员已经发现，当块体锗材料或它的低维微纳结构在一定的张应变作用下，其能带结构将从间接带隙转变为直接带隙，满足高效发光的要求。目前，在 实验室上使用STM针尖等机械手段让悬空的锗薄片弯曲，在弯曲顶点的外侧产生张应变，形成锗直接带隙发光。这种张应变还可以通过将锗外延生长在一种晶格常数更大的衬底材料表面来提供。但是，在硅CMOS工艺中无法提供比锗的晶格常数更大的衬底，而且机械方法产生张应变的方法无法用于在芯片大规模集成，导致难以用于制作在芯片上高度集成的发光器件。综上，单纯通过施加张应力实现锗高效发光的方案目前无法解决在微电子芯片上集成高效发光器件的难题。
发明内容
本发明的一方面，提供了一种兼容CMOS工艺直接带隙发光的硅基材料的制备方法，包括步骤：
S1、准备硅基材料，所述硅基材料为锗材料或者硅锗合金；
S2、在所述硅基材料的部分晶格间隙位置填入惰性气体原子和/或原子序数小的原子达到晶格体积膨胀，以实现其能带结构由间接带隙向直接带隙转变，得到直接带隙发光的硅基材料。
在本发明的一些实施例中，所述填入的方式包括离子注入、电化学注入和外延生长。
在本发明的一些实施例中，所述硅锗合金中硅的合金浓度不大于50％。
本发明的另一方面，还提供了一种发光硅基材料，所述发光硅基材料为具有直接带隙能带结构的锗材料或者硅锗合金，且其部分晶格间隙位置填入惰性气体原子和/或原子序数小的原子。
在本发明的一些实施例中，所述发光硅基材料为具有正四面体共价键特征的晶体结构。
在本发明的一些实施例中，所述具有正四面体共价键特征的晶体结构为金刚石结构或者双轴应变的金刚石结构。
在本发明的一些实施例中，所述硅基材料为块体材料、薄膜材料或者微纳结构材料。
在本发明的一些实施例中，所述惰性气体原子为氦，氦原子相对于锗原子的浓度为大于等于9.0％；和/或
所述惰性气体原子为氖，氖原子相对于锗原子的浓度为大于等于1.5％； 和/或
所述惰性气体原子为氩，氩原子相对于锗原子的浓度为大于等于0.8％；和/或
所述惰性气体原子为氪，氪原子相对于锗原子的浓度为大于等于0.8％。
在本发明的一些实施例中，所述原子序数小的原子包括锂，锂原子数目相对于锗原子的浓度为大于等于3.0％。
本发明的再一方面，还提供了一种发光硅基器件，包括：
微电子芯片，包括硅微电子芯片或者锗微电子芯片；
硅锗合金缓冲层，位于所述硅微电子芯片上；
锗衬底，位于所述硅锗合金缓冲层上；以及
发光硅基材料，位于所述锗衬底上或者位于所述锗微电子芯片上，所述发光硅基材料为具有直接带隙能带结构的锗材料或者硅锗合金，其部分晶格间隙位置填入有惰性气体原子和/或原子序数小的原子。
本发明的发光硅基材料(锗或硅锗合金材料)与现有使用混合集成技术集成在微电子芯片上的III-V族发光材料相比，可实现在微电子芯片上高质量的单晶外延生长，完美兼容微电子CMOS工艺，不存在热失配的问题，可用于制作在微电子芯片上大规模集成光源(发光硅基器件)。
本发明的发光硅基材料(锗或硅锗合金材料)与现有的锡锗合金相比，锗晶格中置入的外部原子体积小，对应的固熔度高，所需置入的外部原子浓度小，避免因大晶格失配导致的晶格缺陷，不容易引入影响发光效率的有害杂质。
本发明与现有使用机械方法产生张应变实现锗直接带隙发光相比，本发明通过往锗晶格的部分间隙位置惰性气体原子和/或原子序数小的原子，例如锂等其它元素的原子导致晶格体积膨胀，产生等效的张应变来实现直接带隙发光，克服了机械方法不能应用于芯片上大规模集成的难题，该方法兼容现有的硅基CMOS工艺，可用于制作微电子芯片上大规模集成光源。
本发明的发光硅基材料随选择注入的原子种类不同，原子浓度不同，材料的带隙大小也不同，因此对应的带边跃迁的激子寿命不同，发出的光子波长亦可在一定范围的远红外波段进行调节，从而获得不同效果的发光锗或硅锗合金材料，以适应实际需求。
附图说明
图1为本发明实施例的发光硅基材料的制备方法的步骤流程图；
图2A为本发明第一实施例的发光硅基器件的结构示意图；
图2B为本发明第二实施例的发光硅基器件的结构示意图；
图3为本发明实施例的含3.0％锂原子浓度的锗晶体结构(Ge 32Li 1)示意图；
图4为本发明实施例的含6.0％锂原子浓度的锗晶体结构(Ge 32Li 2)示意图；
图5为本发明实施例的含3.0％锂原子浓度的锗晶体结构(Ge 32Li 1)和含6.0％锂原子浓度的锗晶体结构(Ge 32Li 2)的能带投影在纯锗FCC布里渊区的能带结构示意图；
图6为本发明实施例的在外延生长在锗衬底上的锗材料的部分晶格间隙位置填入锂原子后，锗材料的直接带隙与间接带隙能级以及带边光学跃迁矩阵元与置入原子浓度的关系示意图；
图7为本发明实施例的在外延生长在锗衬底上的锗材料的部分晶格间隙位置填入氦原子后，锗材料的直接带隙与间接带隙能级以及带边光学跃迁矩阵元与置入原子浓度的关系示意图；
图8为本发明实施例的在外延生长在锗衬底上的锗材料的部分晶格间隙位置填入氖原子后，锗材料的直接带隙与间接带隙能级以及带边光学跃迁矩阵元与置入原子浓度的关系示意图；
图9为本发明实施例的在外延生长在锗衬底上的锗材料的部分晶格间隙位置填入氩原子后，锗材料的直接带隙与间接带隙能级以及带边光学跃迁矩阵元与置入原子浓度的关系示意图；
图10为本发明实施例的在外延生长在锗衬底上的锗材料的部分晶格间隙位置填入氪原子后，锗材料的直接带隙与间接带隙能级以及带边光学跃迁矩阵元与置入原子浓度的关系示意图。
具体实施方式
鉴于以上所述现有技术的缺点，本发明提供了一种兼容CMOS工艺的直接带隙发光的硅基材料(锗或硅锗合金材料)及其制备方法，用于得到 发光效率高，杂质浓度低，制造难度小的直接带隙发光的硅基材料，为硅基或锗基光电子集成技术所需的芯片上集成光源(发光硅基器件，亦即芯片上发光器件)提供一种全新的解决方案。
研究发现，对锗材料施加一定的张应力拉伸锗晶格，能够将锗的能带结构由间接带隙转变为直接带隙并发光。本发明的核心思想在于通过材料生长方法，如离子注入或电化学注入，将惰性气体原子和/或原子序数较小的原子填入于硅基材料(锗或硅锗合金材料)的部分晶格间隙位置，使其晶格体积膨胀产生等效于张应变的效应，从而实现锗或硅锗合金的能带结构由间接带隙到直接带隙的转变。使用第一性原理密度泛函理论方法计算模拟了外延生长在微电子芯片上的所述发光锗材料的晶格结构、电子结构、以及光学性质。计算模拟结果表明，在晶格间隙插入外部原子的方法确实能够使锗的晶格达到体积膨胀，从而使锗的能带结构从间接带隙到直接带隙的转变，实现锗直接带隙高效发光，其带边光学跃迁矩阵元的计算结果肯定了该直接带隙发光的硅基材料具有比肩InP和GaAs等III-V族直接带隙材料的发光效率，因此从理论上验证了本发明能够得到兼容CMOS工艺的硅基发光材料与InP和GaAs等III-V族直接带隙材料比拟的发光效率。根据推测，只要外部注入原子的浓度足够高，该方法同样能够使外延生长在硅衬底上的硅组分不大于50％的硅锗合金实现直接带隙发光。该方法制备的高效发光直接带隙锗材料或者硅锗合金材料能够高质量的单晶外延生长于硅芯片或者锗芯片上，相比于已有的III-V族直接带隙晶片与硅微电子芯片混合集成技术，可实现在硅衬底上单晶外延生长，完美兼容微电子CMOS工艺，不存在热失配的问题，可用于制作在芯片上大规模集成光源。相比于已有的锗锡合金调控锗直接带隙发光的方法，在锗晶格中置入的外部原子序数小，对应的固溶度高，所需注入的原子浓度低，可以减少引入有害杂质和晶格缺陷，从而得到性质更稳定的高效发光锗材料。相比于现有使用机械方法产生张应变实现锗直接带隙发光，本发明通过往锗晶格的部分间隙位置置入外部原子产生等效张应变来实现锗材料直接带隙发光，克服了机械方法不能应用于芯片上大规模集成的难题。且硅锗合金与锗材料的性质类似，也可以用于得到直接带隙发光的硅基材料。
该方法兼容现有的CMOS工艺，可以用于制备集成在硅基或锗基微电 子芯片上的高效发光器件。另外，本发明的高效发光锗材料或者硅锗合金材料选择注入的原子种类不同，原子浓度不同，材料的直接带隙宽窄也不同，因此对应的直接带隙跃迁的激子寿命不同，其发射的光子波长亦可在一定范围的远红外波段进行调节，从而获得不同效果的高效发光锗或硅锗合金材料，以适应不同的应用需求。综上，本发明为硅基或锗基光电子集成技术所需的可大规模集成在芯片上的高效光源提供了一种全新的可能的解决方案。
为使本发明的目的、技术方案和优点更加清楚明白，以下结合具体实施例，并参照附图，对本发明作进一步的详细说明。
本发明实施例的一方面，提供了一种发光硅基材料(直接带隙发光的硅基材料)的制备方法，图1为本发明实施例的发光硅基材料的制备方法的步骤流程图，包括以下步骤：
S1、准备硅基材料，所述硅基材料为锗材料或者硅锗合金；
所述锗材料可以为正四面体共价键特征的锗的同素异形体等立体晶体结构，本发明实施例选择金刚石结构的单晶锗材料。其中，所述体材料指晶格具有三维周期性的块体材料，亦可以是锗的薄膜材料和锗的低维微纳结构，其中锗材料工艺成熟，制备简单，成本更低，且适用于微电子芯片上大规模集成。
所述硅锗合金，主要通过在锗材料中混合硅，且硅的合金浓度不大于50.0％，此时，在所述锗材料中混合有少量的硅，材料仍能通过置入外部原子转变为直接带隙能带结构，实现具有优异性能的直接带隙发光。
S2、在所述锗材料或者硅锗合金材料的部分晶格间隙位置填入惰性气体原子和/或原子序数较小的原子达到晶格体积膨胀，以实现其能带结构由间接带隙向直接带隙转变，且其发光效率接近InP和GaAs等III-V族直接带隙发光材料，具有直接带隙高效率发光的性质。
因为惰性气体(稀有气体)的原子具有满壳层的电子结构，不存在价电子，与锗的价电子间的相互作用可以忽略。在锗材料的部分晶格间隙位置填入惰性气体的原子，不会改变费米能级位置，其对锗材料的能带结构的影响来自其置入后引起锗晶格体积膨胀所对应的张应变。惰性气体原子包括氦，一般其相比与锗原子数目的浓度为大于等于9.0％，可以使锗变成 直接带隙发光。在其他实施例中，填入的惰性气体原子不限于氦，也可以为氖、氩和氪，各惰性气体原子相对于锗原子数目的浓度范围依次为大于等于1.5％、大于等于0.8％和大于等于0.8％。此时，锗材料因为惰性气体原子的注入，锗晶格体积膨胀，锗的能带结构由间接带隙转变为直接带隙，具备优异的直接带隙发光性质。
对于原子序数较小的原子，例如原子序数小于10的原子，包括但不限于锂和铍，因为其原子尺寸小，固溶度高，易于填入锗金刚石晶格的间隙位置。特别是实验上已经发现硅和锗是性能非常好的锂电池负极材料，通过电化学方法可以往硅和锗中注入大量的锂原子，实验上已经发现它们的体积最大可以膨胀300％以上。我们发现，当3.0％以上的锗晶格间隙位置置入锂原子(也就是锂原子数目达到锗原子数目3.0％以上)后，锗材料的能带结构由间接带隙转变为直接带隙，具有优异的直接带隙发光性质。但是，由于锂原子含有一个价电子，它的注入使锗成为n型重掺杂，费米能级位于导带里面。本发明实施例中，优选为大于等于3.0％原子浓度的锂，一般来说，置入的外部原子浓度越低，锗晶格热力学性质越稳定，外部原子对锗材料带边电子结构的影响越小，可能引入的有害杂质和晶格缺陷越少，对应于该实施例中最优化的高效发光锗材料。
需要说明的是，惰性气体原子中氩和氪等原子由于原子序数较大，因此一般不与原子序数较小的原子混合填入硅基材料的部分间隙位置，而氦和氖等原子序数较小的惰性气体原子则因为原子序数较小，可以与原子序数较小的原子混合填入硅基材料的部分间隙位置，基于类似原因，不同类型的原子序数较小的原子也可以互相混合，填入硅基材料的部分间隙位置，从而得到直接带隙发光的硅基材料。
此外，在硅基材料的晶格间隙位置置入外部原子的方法可以为离子注入或电化学注入方法等半导体掺杂工艺或在硅基材料的外延生长过程中引入。本发明实施例选择使用离子注入方法，即使用离子注入机在真空中通过电场加速锂或氦原子得到高能的锂或氦离子束，并利用磁场调控离子注入的方向，进而选择特定能量和浓度的离子注入锗的晶圆片内部，然后进行退火处理减小缺陷浓度，在硅基材料的表面形成具有发光性质的注入层。相比与扩散法而言，离子注入具有加工温度低，大面积注入均匀，且 易于控制注入的浓度和深度等优点。
重要的是，在不同的实施例中，发光硅基材料的直接带隙大小随注入原子种类和注入原子浓度的不同而改变，因此对应带边激射发出光的波长亦可在远红外波段的一定范围内进行调节，从而获得不同效果的发光硅基材料，能够适应不同的实际应用需求。
本发明实施例的另一方面，还提供了一种发光硅基材料，所述发光硅基材料为具有直接带隙能带结构的锗材料或者硅锗合金，且其部分晶格间隙位置填入惰性气体原子和/或原子序数小的原子。
所述发光硅基材料可以为正四面体共价键特征的锗同素异形体晶体结构，本发明实施例选择金刚石结构的块体锗材料。所选择的锗块体材料具有三维周期性的晶格结构，亦可以是它的薄膜以及低维微纳结构，其中锗材料工艺成熟，制备简单，成本更低，且适用于大规模集成。此外，该发光硅基材料的发光效率接近InP和GaAs等III-V族直接带隙发光材料，具有发光效率高的直接带隙发光性质。
还可以选择硅锗合金，即在锗材料中混合硅材料，且硅的合金浓度不大于50.0％，此时，在所述锗材料中混合有少量的硅，材料仍能通过置入外部原子实现其能带结构由间接带隙转变为直接带隙能，并能够高效发光。
惰性气体原子的电子与锗的共价电子间的相互作用可以忽略，当惰性气体原子置入锗材料的晶格间隙位置后，锗材料的晶格体积膨胀，产生等效的应变使锗材料的能带结构由间接带隙转变为直接带隙，具备直接带隙高效发光的特性。本发明实施例中选择氦，且氦的原子浓度为大于等于9.0％。在其他实施例中，填入的惰性气体原子不限于氦，也可以为氖、氩和氪，各惰性气体原子相对于锗原子的浓度范围依次为大于等于1.5％、大于等于0.8％和大于等于0.8％。此时，硅基材料因为惰性气体原子的注入其晶格体积膨胀，硅基材料可由间接带隙材料转变为直接带隙材料，从而具备优异的直接带隙发光性质。
对于原子序数小的原子，例如原子序数小于10的原子，包括但不限于锂和铍，因为其原子尺寸小，固溶度高，易于填入锗金刚石晶格的间隙位置。特别是对于锂原子，通过电化学方法可以往硅和锗中注入大剂量锂原子的工艺，已经被工业界广泛应用于制造锂电池。当锗晶格间隙位置置 入锂原子数目相对于锗原子超过3.0％，锗材料的能带结构由间接带隙转变为直接带隙，具有优异的发光性质。一般来说，置入的外部原子浓度越低，锗晶格热力学性质越稳定，外部原子对锗材料带边电子结构的影响越小，可能引入的有害杂质越少，由于晶格失配所导致的界面缺陷也越少，对应于该实施例中最优化的高效发光锗材料。
本发明实施例的再一方面，还提供了一种发光硅基器件，图2A为本发明第一实施例的发光硅基器件的结构示意图，如图2A所示，该发光硅基器件包括：硅微电子芯片；硅锗合金缓冲层，位于所述硅微电子芯片上；锗衬底，位于所述硅锗合金缓冲层上；以及单晶外延生长在该硅微电子芯片上的发光硅基材料，位于所述锗衬底上，所述发光硅基材料为直接带隙材料，具有直接带隙的能带结构，其部分晶格间隙位置填入有惰性气体原子和/或原子序数小的原子。
图2B为本发明第二实施例的发光硅基器件的结构示意图，如图2B所示，该发光硅基器件包括：锗微电子芯片，以及单晶外延生长在该锗微电子芯片上的发光硅基材料，位于所述锗微电子芯片上，所述发光硅基材料为直接带隙材料，具有直接带隙的能带结构，其部分晶格间隙位置填入有惰性气体原子和/或原子序数小的原子。
也就是说，该发光硅基材料可以集成在锗或者硅芯片上。本发明实施例采用微电子CMOS芯片，通过采用与CMOS工艺兼容的上述发光硅基材料，将光学器件与电学器件集成在同一芯片上，从而实现大规模集成的光电子芯片，充分发挥电子器件与光子器件的各自特性，极大提升单个芯片的运算能力，显著降低系统功耗和发热，有效的缩减工艺成本，减小系统的体积。
其中，微电子芯片、硅锗合金缓冲层、锗衬底和发光锗材料之间的沉积方法为原子层沉积、等离子增强化学气相沉积、磁控溅射、分子束外延或金属有机化学气相沉积、干法氧化、湿法氧化、离子注入中的一种或多种。
图3为本发明实施例的含3.0％锂原子浓度的锗晶体结构(Ge 32Li 1)示意图，在单个32个锗原子的晶胞中，一个Li原子随机填入在锗晶格的其中一个间隙位，图4为本发明实施例的含6.0％锂原子浓度的锗晶体结构 (Ge32Li2)示意图，在单个32个锗原子的晶胞中，两个Li原子根据准随机合金的要求填入在锗晶格的其中两个间隙位，如图3及图4所示，Ge 32Li 1中Li的注入浓度为3.0％，第一性原理密度泛函理论计算方法预测的晶格常数为
Figure PCTCN2018078711-appb-000001
Ge 32Li 2中Li的注入浓度为6.0％，第一性原理密度泛函理论计算方法预测的晶格常数为
Figure PCTCN2018078711-appb-000002
图5为本发明实施例的含3.0％锂原子浓度的锗晶体结构(Ge 32Li 1)和含6.0％锂原子浓度的锗晶体结构(Ge 32Li 2)的能带投影在纯锗FCC布里渊区的能带结构示意图，如图5所示，图中圆点的大小代表了含3.0％锂原子的锗材料和含6.0％锂原子的锗材料的电子态分别投影后得到的纯锗Bloch能带的组分值。通过比较纯锗晶体、含3.0％锂原子的锗材料和含6.0％锂原子的锗材料这三种材料的能带结构，从图中可以看到纯锗晶体的确是间接带隙材料，含6.0％锂原子的锗材料已经成为直接带隙材料，而含3.0％锂原子的锗材料的直接带隙和间接带隙能级几乎相等，处于从间接带隙到直接带隙转变的临近点。当材料的直接带隙能级低于间接带隙能级时，该材料即为直接带隙材料，具有优异的发光性能；反之，该材料则为间接带隙材料，发光效率要比直接带隙低2-5个数量级，不宜作为发光材料。注意到，从纯锗到含3.0％锂原子的锗材料再到含6.0％锂原子的锗材料，直接带隙能级依次从高于间接带隙能级到持平间接带隙能级再演变为低于间接带隙能级。
图6为本发明实施例的在外延生长在锗衬底上的锗材料的部分晶格间隙位置填入锂原子后，锗材料的直接带隙与间接带隙能级以及带边光学跃迁矩阵元与置入原子浓度的关系示意图，其中锗材料晶格在置入锂原子后发生双轴张应变，平面晶格受锗衬底的约束不发生改变，而晶格在垂直方向变大，另外，锗衬底可以是单晶锗片也可以通过在硅衬底上外延生长硅锗合金缓冲层最终得到无应变的单晶锗层。如图6(a)所示，当锗材料中含有的锂原子浓度达到3.0％及以上时，直接带隙能级要小于间接带隙能级，其能带结构由间接带隙转变为直接带隙。上述阈值浓度对应的锗材料的直接带隙能量值为0.61eV。如图6(b)所示，伴随能带结构从间接带隙到直接带隙的转变，相应锗材料的价带顶到导带底之间的带边光学跃迁矩阵元在锂原子浓度3.0％附近发生从零值到0.20a.u间的转变。考虑到GaAs 和InP等III-V族直接带隙材料的带边光学跃迁矩阵元在0.3a.u左右，所以，我们证实了本发明实例的发光锗材料是直接带隙发光的高效发光材料。
图7为本发明实施例的在外延生长在锗衬底上的锗材料的部分晶格间隙位置填入氦原子后，锗材料的直接带隙与间接带隙能级以及带边光学跃迁矩阵元与置入原子浓度的关系示意图，其中锗材料晶格在置入氦原子后发生双轴张应变，平面晶格受锗衬底的约束不发生改变，而晶格在垂直方向变大，另外，锗衬底可以是单晶锗片也可以通过在硅衬底上外延生长硅锗合金缓冲层最终得到无应变的单晶锗层。如图7(a)所示，当锗材料中含有的氦原子浓度达到9.0％及以上时，直接带隙能级要小于间接带隙能级，其能带结构由间接带隙转变为直接带隙。上述阈值浓度对应的锗材料的直接带隙能量值为0.71eV。如图7(b)所示，伴随能带结构从间接带隙到直接带隙的转变，相应锗材料的价带顶到导带底之间的带边光学跃迁矩阵元在氦原子浓度9.0％附近发生从零值到0.22a.u.间的转变，证实了本发明实例的发光锗材料是直接带隙发光的高效发光材料。
图8为本发明实施例的在外延生长在锗衬底上的锗材料的部分晶格间隙位置填入氖原子后，锗材料的直接带隙与间接带隙能级以及带边光学跃迁矩阵元与置入原子浓度的关系示意图，其中锗材料晶格在置入氦原子后发生双轴张应变，平面晶格受锗衬底的约束不发生改变，而晶格在垂直方向变大，另外，锗衬底可以是单晶锗片也可以通过在硅衬底上外延生长硅锗合金缓冲层最终得到无应变的单晶锗层。如图8(a)所示，当锗材料中含有的氖原子浓度达到1.5％及以上时，直接带隙能级要小于间接带隙能级，其能带结构由间接带隙转变为直接带隙。上述阈值浓度对应的锗材料的直接带隙能量值为0.78eV。如图8(b)所示，伴随能带结构从间接带隙到直接带隙的转变，相应锗材料的价带顶到导带底之间的带边光学跃迁矩阵元在氖原子浓度1.5％附近发生从零值到0.10a.u间的转变，证实了本发明实例的发光锗材料是直接带隙发光的高效发光材料。
图9为本发明实施例的在外延生长在锗衬底上的锗材料的部分晶格间隙位置填入氩原子后，锗材料的直接带隙与间接带隙能级以及带边光学跃迁矩阵元与置入原子浓度的关系示意图，其中锗材料晶格在置入氦原子后发生双轴张应变，平面晶格受锗衬底的约束不发生改变，而晶格在垂直方 向变大，另外，锗衬底可以是单晶锗片也可以通过在硅衬底上外延生长硅锗合金缓冲层最终得到无应变的单晶锗层。如图9(a)所示，当锗材料中含有的氩原子浓度达到1.5％及以上时，直接带隙能级要小于间接带隙能级，其能带结构由间接带隙转变为直接带隙。上述阈值浓度对应的锗材料的直接带隙能量值为0.78eV。如图9(b)所示，伴随能带结构从间接带隙到直接带隙的转变，相应锗材料的价带顶到导带底之间的带边光学跃迁矩阵元在氩原子浓度1.5％附近发生从零值到0.36a.u间的转变，证实了本发明实例的发光锗材料是直接带隙发光的高效发光材料。
图10为本发明实施例的在外延生长在锗衬底上的锗材料的部分晶格间隙位置填入氪原子后，锗材料的直接带隙与间接带隙能级以及带边光学跃迁矩阵元与置入原子浓度的关系示意图，其中锗材料晶格在置入氦原子后发生双轴张应变，平面晶格受锗衬底的约束不发生改变，而晶格在垂直方向变大，另外，锗衬底可以是单晶锗片也可以通过在硅衬底上外延生长硅锗合金缓冲层最终得到无应变的单晶锗层。如图10(a)所示，当锗材料中含有的氩原子浓度达到0.8％及以上时，直接带隙能级要小于间接带隙能级，其能带结构由间接带隙转变为直接带隙。上述阈值浓度对应的锗材料的直接带隙能量值为0.63eV。如图10(b)所示，伴随能带结构从间接带隙到直接带隙的转变，相应锗材料的价带顶到导带底之间的带边光学跃迁矩阵元在氪原子浓度0.8％附近发生从零值到0.28a.u间的转变，证实了本发明实例的发光锗材料是直接带隙发光的高效发光材料。
以上所述的具体实施例，对本发明的目的、技术方案和有益效果进行了进一步详细说明，应理解的是，以上所述仅为本发明的具体实施例而已，并不用于限制本发明，凡在本发明的精神和原则之内，所做的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。

Claims (10)

  1. 一种兼容CMOS工艺直接带隙发光的硅基材料的制备方法，其特征在于，包括步骤：
    S1、准备硅基材料，所述硅基材料为锗材料或者硅锗合金；
    S2、在所述硅基材料的部分晶格间隙位置填入惰性气体原子和/或原子序数小的原子达到晶格体积膨胀，以实现其能带结构由间接带隙向直接带隙转变，得到直接带隙发光的硅基材料。
  2. 根据权利要求1所述的制备方法，其特征在于，所述填入的方式包括离子注入、电化学注入和外延生长。
  3. 根据权利要求1所述的制备方法，其特征在于，所述硅锗合金中硅的合金浓度不大于50％。
  4. 一种发光硅基材料，其特征在于，所述发光硅基材料为具有直接带隙能带结构的锗材料或者硅锗合金，且其部分晶格间隙位置填入惰性气体原子和/或原子序数小的原子。
  5. 根据权利要求4所述的发光硅基材料，其特征在于，所述发光硅基材料为具有正四面体共价键特征的晶体结构。
  6. 根据权利要求5所述的发光硅基材料，其特征在于，所述具有正四面体共价键特征的晶体结构为金刚石结构或者双轴应变的金刚石结构。
  7. 根据权利要求4所述的发光硅基材料，其特征在于，所述硅基材料为块体材料、薄膜材料或者微纳结构材料。
  8. 根据权利要求4所述的发光硅基材料，其特征在于，所述惰性气体原子为氦，氦原子相对于锗原子的浓度为大于等于9.0％；和/或
    所述惰性气体原子为氖，氖原子相对于锗原子的浓度为大于等于1.5％；和/或
    所述惰性气体原子为氩，氩原子相对于锗原子的浓度为大于等于0.8％；和/或
    所述惰性气体原子为氪，氪原子相对于锗原子的浓度为大于等于0.8％。
  9. 根据权利要求4所述的发光硅基材料，其特征在于，所述原子序数小的原子包括锂，锂原子数目相对于锗原子的浓度为大于等于3.0％。
  10. 一种发光硅基器件，其特征在于，包括：
    微电子芯片，包括硅微电子芯片或者锗微电子芯片；
    硅锗合金缓冲层，位于所述硅微电子芯片上；
    锗衬底，位于所述硅锗合金缓冲层上；以及
    发光硅基材料，位于所述锗衬底上或者位于所述锗微电子芯片上，所述发光硅基材料为具有直接带隙能带结构的锗材料或者硅锗合金，其部分晶格间隙位置填入有惰性气体原子和/或原子序数小的原子。
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130161653A1 (en) * 2011-12-23 2013-06-27 Seoul National University R&Db Foundation Electroluminescence device using indirect bandgap semiconductor
KR20160087060A (ko) * 2015-01-12 2016-07-21 한국과학기술원 실리콘 결정 및 이를 포함하는 전자 소자
CN105908229A (zh) * 2016-04-29 2016-08-31 哈尔滨工业大学 一种利用锂化法调节三维光子晶体带隙的方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8711373D0 (en) * 1987-05-14 1987-06-17 Secr Defence Electroluminescent silicon device
US6812523B1 (en) * 2001-09-21 2004-11-02 Wei-Kan Chu Semiconductor wafer with ultra thin doping level formed by defect engineering
US7410846B2 (en) * 2003-09-09 2008-08-12 International Business Machines Corporation Method for reduced N+ diffusion in strained Si on SiGe substrate
JP2007157749A (ja) * 2005-11-30 2007-06-21 Toshiba Corp 発光素子
JP2007173590A (ja) * 2005-12-22 2007-07-05 Toshiba Corp 半導体発光材料およびそれを用いた発光素子
JP4296193B2 (ja) * 2006-09-29 2009-07-15 株式会社東芝 光デバイス
US8063413B2 (en) * 2007-11-06 2011-11-22 Massachusetts Institute Of Technology Tensile strained GE for electronic and optoelectronic applications
JP2010118600A (ja) * 2008-11-14 2010-05-27 Toshiba Corp 半導体材料、半導体材料の製造方法、発光素子、および受光素子
KR102246766B1 (ko) * 2013-06-20 2021-04-29 스트라티오 인코포레이티드 Cmos 센서용 게이트-제어 전하 변조 디바이스
US10516725B2 (en) * 2013-09-26 2019-12-24 Synopsys, Inc. Characterizing target material properties based on properties of similar materials
US10418238B2 (en) * 2017-05-12 2019-09-17 Ohio State Innovation Foundation Devices, systems, and methods for light emission and detection using amorphous silicon

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130161653A1 (en) * 2011-12-23 2013-06-27 Seoul National University R&Db Foundation Electroluminescence device using indirect bandgap semiconductor
KR20160087060A (ko) * 2015-01-12 2016-07-21 한국과학기술원 실리콘 결정 및 이를 포함하는 전자 소자
CN105908229A (zh) * 2016-04-29 2016-08-31 哈尔滨工业大学 一种利用锂化法调节三维光子晶体带隙的方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
BOUHAFS, B. ET AL.: "Predicted Modifications in the Direct and Indirect Gaps of Si", SOLID STATE COMMUNICATIONS, vol. 96, no. 4, 31 October 1995 (1995-10-31), pages 245 *

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