GB0014042D0 - A radiation-emissive optoelectric device and a method of making same - Google Patents

A radiation-emissive optoelectric device and a method of making same

Info

Publication number
GB0014042D0
GB0014042D0 GB0014042A GB0014042A GB0014042D0 GB 0014042 D0 GB0014042 D0 GB 0014042D0 GB 0014042 A GB0014042 A GB 0014042A GB 0014042 A GB0014042 A GB 0014042A GB 0014042 D0 GB0014042 D0 GB 0014042D0
Authority
GB
United Kingdom
Prior art keywords
emissive
radiation
making same
optoelectric device
optoelectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GB0014042A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Surrey
Original Assignee
University of Surrey
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Surrey filed Critical University of Surrey
Priority to GB0014042A priority Critical patent/GB0014042D0/en
Publication of GB0014042D0 publication Critical patent/GB0014042D0/en
Priority to JP2002502838A priority patent/JP5166665B2/en
Priority to US10/297,115 priority patent/US7274041B2/en
Priority to PCT/GB2001/002512 priority patent/WO2001095401A1/en
Priority to TW90113804A priority patent/TW533456B/en
Priority to AU2001262537A priority patent/AU2001262537A1/en
Priority to CNB018107605A priority patent/CN1310344C/en
Priority to CA2411331A priority patent/CA2411331C/en
Priority to EP01936668A priority patent/EP1287565A1/en
Priority to US11/770,838 priority patent/US8890177B2/en
Ceased legal-status Critical Current

Links

GB0014042A 2000-06-08 2000-06-08 A radiation-emissive optoelectric device and a method of making same Ceased GB0014042D0 (en)

Priority Applications (10)

Application Number Priority Date Filing Date Title
GB0014042A GB0014042D0 (en) 2000-06-08 2000-06-08 A radiation-emissive optoelectric device and a method of making same
EP01936668A EP1287565A1 (en) 2000-06-08 2001-06-07 Method for locally modifying electronic and optoelectronic properties of crystalline materials and devices made from such materials
TW90113804A TW533456B (en) 2000-06-08 2001-06-07 Radiation-emissive optoelectronic device and method for making the same
US10/297,115 US7274041B2 (en) 2000-06-08 2001-06-07 Method for locally modifying electronic and optoelectronic properties of crystalline materials an devices made from such materials
PCT/GB2001/002512 WO2001095401A1 (en) 2000-06-08 2001-06-07 Method for locally modifying electronic and optoelectronic properties of crystalline materials and devices made from such materials
JP2002502838A JP5166665B2 (en) 2000-06-08 2001-06-07 Method for locally changing the electronic and photoelectric properties of a crystalline material and an element made of such a material
AU2001262537A AU2001262537A1 (en) 2000-06-08 2001-06-07 Method for locally modifying electronic and optoelectronic properties of crystalline materials and devices made from such materials
CNB018107605A CN1310344C (en) 2000-06-08 2001-06-07 Method for locally modifying electronic and optoelectronic properties of crystalline materials and devices made from such materials
CA2411331A CA2411331C (en) 2000-06-08 2001-06-07 Method for locally modifying electronic and optoelectronic properties of crystalline materials and devices made from such materials
US11/770,838 US8890177B2 (en) 2000-06-08 2007-06-29 Semiconductor devices made from crystalline materials with locally modifying electronic and optoelectronic properties

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB0014042A GB0014042D0 (en) 2000-06-08 2000-06-08 A radiation-emissive optoelectric device and a method of making same

Publications (1)

Publication Number Publication Date
GB0014042D0 true GB0014042D0 (en) 2000-08-02

Family

ID=9893279

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0014042A Ceased GB0014042D0 (en) 2000-06-08 2000-06-08 A radiation-emissive optoelectric device and a method of making same

Country Status (9)

Country Link
US (2) US7274041B2 (en)
EP (1) EP1287565A1 (en)
JP (1) JP5166665B2 (en)
CN (1) CN1310344C (en)
AU (1) AU2001262537A1 (en)
CA (1) CA2411331C (en)
GB (1) GB0014042D0 (en)
TW (1) TW533456B (en)
WO (1) WO2001095401A1 (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0014042D0 (en) * 2000-06-08 2000-08-02 Univ Surrey A radiation-emissive optoelectric device and a method of making same
KR100828351B1 (en) * 2001-04-17 2008-05-08 삼성전자주식회사 Light-emitting diode and display device applying it
KR100866789B1 (en) * 2001-04-17 2008-11-04 삼성전자주식회사 Light-emitting diode and light-emitting device apparatus employing it
KR100446622B1 (en) * 2002-01-10 2004-09-04 삼성전자주식회사 Silicon optoelectronic device and light emitting device applied it
WO2006117389A1 (en) 2005-05-03 2006-11-09 Ihp Gmbh - Innovations For High Performance Microelectronics / Institut Für Innovative Mikroelektronik Dislocation-based light emitter
US7294848B2 (en) * 2005-05-26 2007-11-13 Avago Technologies General Ip (Singapore) Pte. Ltd. Light-emitting Group IV semiconductor devices
US7247885B2 (en) * 2005-05-26 2007-07-24 Avago Technologies General Ip (Singapore) Ltd. Pte. Carrier confinement in light-emitting group IV semiconductor devices
CA2713070C (en) * 2008-02-01 2016-07-26 Insiava (Pty) Limited Semiconductor light emitting device comprising heterojunction
GB201019725D0 (en) 2010-11-22 2011-01-05 Univ Surrey Optoelectronic devices
US8748908B2 (en) * 2012-05-07 2014-06-10 Sufian Abedrabbo Semiconductor optical emission device
JP2014096458A (en) * 2012-11-08 2014-05-22 V Technology Co Ltd Optical interconnection device
EP4042530A4 (en) * 2019-09-30 2023-10-25 NLIGHT, Inc. Strain-engineered cladding layer for optimized active region strain and improved laser diode performance

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4322253A (en) * 1980-04-30 1982-03-30 Rca Corporation Method of making selective crystalline silicon regions containing entrapped hydrogen by laser treatment
US4684964A (en) * 1980-10-08 1987-08-04 Rca Corporation Silicon light emitting device and a method of making the device
GB8711373D0 (en) * 1987-05-14 1987-06-17 Secr Defence Electroluminescent silicon device
JP2792249B2 (en) * 1991-03-08 1998-09-03 日本電気株式会社 Light emitting device and method for manufacturing the same
GB2318680B (en) 1996-10-24 2001-11-07 Univ Surrey Optoelectronic semiconductor devices
JP3303914B2 (en) * 1999-06-16 2002-07-22 日本電気株式会社 Light emitting device and method for manufacturing the same
GB0014042D0 (en) * 2000-06-08 2000-08-02 Univ Surrey A radiation-emissive optoelectric device and a method of making same

Also Published As

Publication number Publication date
US20030150376A1 (en) 2003-08-14
CA2411331A1 (en) 2001-12-13
US8890177B2 (en) 2014-11-18
AU2001262537A1 (en) 2001-12-17
WO2001095401A1 (en) 2001-12-13
EP1287565A1 (en) 2003-03-05
TW533456B (en) 2003-05-21
CN1310344C (en) 2007-04-11
US20070263690A1 (en) 2007-11-15
JP5166665B2 (en) 2013-03-21
CA2411331C (en) 2013-02-26
JP2003536262A (en) 2003-12-02
CN1433580A (en) 2003-07-30
US7274041B2 (en) 2007-09-25

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Legal Events

Date Code Title Description
AT Applications terminated before publication under section 16(1)