AU2001262537A1 - Method for locally modifying electronic and optoelectronic properties of crystalline materials and devices made from such materials - Google Patents
Method for locally modifying electronic and optoelectronic properties of crystalline materials and devices made from such materialsInfo
- Publication number
- AU2001262537A1 AU2001262537A1 AU2001262537A AU6253701A AU2001262537A1 AU 2001262537 A1 AU2001262537 A1 AU 2001262537A1 AU 2001262537 A AU2001262537 A AU 2001262537A AU 6253701 A AU6253701 A AU 6253701A AU 2001262537 A1 AU2001262537 A1 AU 2001262537A1
- Authority
- AU
- Australia
- Prior art keywords
- materials
- devices made
- optoelectronic properties
- locally modifying
- modifying electronic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/34—Materials of the light emitting region containing only elements of group IV of the periodic system
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0037—Devices characterised by their operation having a MIS barrier layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
- H01S5/2063—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by particle bombardment
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0014042A GB0014042D0 (en) | 2000-06-08 | 2000-06-08 | A radiation-emissive optoelectric device and a method of making same |
GB0014042 | 2000-06-08 | ||
PCT/GB2001/002512 WO2001095401A1 (en) | 2000-06-08 | 2001-06-07 | Method for locally modifying electronic and optoelectronic properties of crystalline materials and devices made from such materials |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2001262537A1 true AU2001262537A1 (en) | 2001-12-17 |
Family
ID=9893279
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2001262537A Abandoned AU2001262537A1 (en) | 2000-06-08 | 2001-06-07 | Method for locally modifying electronic and optoelectronic properties of crystalline materials and devices made from such materials |
Country Status (9)
Country | Link |
---|---|
US (2) | US7274041B2 (en) |
EP (1) | EP1287565A1 (en) |
JP (1) | JP5166665B2 (en) |
CN (1) | CN1310344C (en) |
AU (1) | AU2001262537A1 (en) |
CA (1) | CA2411331C (en) |
GB (1) | GB0014042D0 (en) |
TW (1) | TW533456B (en) |
WO (1) | WO2001095401A1 (en) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB0014042D0 (en) * | 2000-06-08 | 2000-08-02 | Univ Surrey | A radiation-emissive optoelectric device and a method of making same |
KR100866789B1 (en) * | 2001-04-17 | 2008-11-04 | 삼성전자주식회사 | Light-emitting diode and light-emitting device apparatus employing it |
KR100828351B1 (en) * | 2001-04-17 | 2008-05-08 | 삼성전자주식회사 | Light-emitting diode and display device applying it |
KR100446622B1 (en) * | 2002-01-10 | 2004-09-04 | 삼성전자주식회사 | Silicon optoelectronic device and light emitting device applied it |
US7880189B2 (en) | 2005-05-03 | 2011-02-01 | IHP GmbH-Innovations for High Performance Microelectronics/ Leibniz-Institut für innovative Mikroelektronik | Dislocation-based light emitter |
US7247885B2 (en) * | 2005-05-26 | 2007-07-24 | Avago Technologies General Ip (Singapore) Ltd. Pte. | Carrier confinement in light-emitting group IV semiconductor devices |
US7294848B2 (en) * | 2005-05-26 | 2007-11-13 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Light-emitting Group IV semiconductor devices |
ATE523900T1 (en) * | 2008-02-01 | 2011-09-15 | Insiava Pty Ltd | LIGHT-EMITTING SEMICONDUCTOR COMPONENT WITH HETEROJUNCTIONS |
GB201019725D0 (en) | 2010-11-22 | 2011-01-05 | Univ Surrey | Optoelectronic devices |
US8748908B2 (en) * | 2012-05-07 | 2014-06-10 | Sufian Abedrabbo | Semiconductor optical emission device |
JP2014096458A (en) * | 2012-11-08 | 2014-05-22 | V Technology Co Ltd | Optical interconnection device |
CN114503381A (en) * | 2019-09-30 | 2022-05-13 | 恩耐公司 | Strained engineered cladding layers for optimizing active region strain and improving laser diode performance |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4322253A (en) * | 1980-04-30 | 1982-03-30 | Rca Corporation | Method of making selective crystalline silicon regions containing entrapped hydrogen by laser treatment |
US4684964A (en) * | 1980-10-08 | 1987-08-04 | Rca Corporation | Silicon light emitting device and a method of making the device |
GB8711373D0 (en) * | 1987-05-14 | 1987-06-17 | Secr Defence | Electroluminescent silicon device |
JP2792249B2 (en) * | 1991-03-08 | 1998-09-03 | 日本電気株式会社 | Light emitting device and method for manufacturing the same |
GB2318680B (en) * | 1996-10-24 | 2001-11-07 | Univ Surrey | Optoelectronic semiconductor devices |
JP3303914B2 (en) * | 1999-06-16 | 2002-07-22 | 日本電気株式会社 | Light emitting device and method for manufacturing the same |
GB0014042D0 (en) * | 2000-06-08 | 2000-08-02 | Univ Surrey | A radiation-emissive optoelectric device and a method of making same |
-
2000
- 2000-06-08 GB GB0014042A patent/GB0014042D0/en not_active Ceased
-
2001
- 2001-06-07 JP JP2002502838A patent/JP5166665B2/en not_active Expired - Fee Related
- 2001-06-07 US US10/297,115 patent/US7274041B2/en not_active Expired - Fee Related
- 2001-06-07 CA CA2411331A patent/CA2411331C/en not_active Expired - Fee Related
- 2001-06-07 CN CNB018107605A patent/CN1310344C/en not_active Expired - Fee Related
- 2001-06-07 WO PCT/GB2001/002512 patent/WO2001095401A1/en active Application Filing
- 2001-06-07 AU AU2001262537A patent/AU2001262537A1/en not_active Abandoned
- 2001-06-07 TW TW90113804A patent/TW533456B/en not_active IP Right Cessation
- 2001-06-07 EP EP01936668A patent/EP1287565A1/en not_active Ceased
-
2007
- 2007-06-29 US US11/770,838 patent/US8890177B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2003536262A (en) | 2003-12-02 |
US20070263690A1 (en) | 2007-11-15 |
TW533456B (en) | 2003-05-21 |
CA2411331A1 (en) | 2001-12-13 |
WO2001095401A1 (en) | 2001-12-13 |
US20030150376A1 (en) | 2003-08-14 |
JP5166665B2 (en) | 2013-03-21 |
GB0014042D0 (en) | 2000-08-02 |
US7274041B2 (en) | 2007-09-25 |
CN1310344C (en) | 2007-04-11 |
CN1433580A (en) | 2003-07-30 |
EP1287565A1 (en) | 2003-03-05 |
CA2411331C (en) | 2013-02-26 |
US8890177B2 (en) | 2014-11-18 |
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