AU2002312317A1 - Microelectronic photonic structure and device and method of forming the same - Google Patents

Microelectronic photonic structure and device and method of forming the same

Info

Publication number
AU2002312317A1
AU2002312317A1 AU2002312317A AU2002312317A AU2002312317A1 AU 2002312317 A1 AU2002312317 A1 AU 2002312317A1 AU 2002312317 A AU2002312317 A AU 2002312317A AU 2002312317 A AU2002312317 A AU 2002312317A AU 2002312317 A1 AU2002312317 A1 AU 2002312317A1
Authority
AU
Australia
Prior art keywords
microelectronic
forming
same
photonic structure
photonic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002312317A
Inventor
Mchael N. Kozicki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Axon Technologies Corp
Original Assignee
Axon Technologies Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Axon Technologies Corp filed Critical Axon Technologies Corp
Publication of AU2002312317A1 publication Critical patent/AU2002312317A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0011—RRAM elements whose operation depends upon chemical change comprising conductive bridging RAM [CBRAM] or programming metallization cells [PMCs]
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on an electrochromic effect
    • G02F1/1506—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on an electrochromic effect caused by electrodeposition, e.g. electrolytic deposition of an inorganic material on or close to an electrode
    • G02F1/1508—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on an electrochromic effect caused by electrodeposition, e.g. electrolytic deposition of an inorganic material on or close to an electrode using a solid electrolyte
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on an electrochromic effect
    • G02F1/153—Constructional details
    • G02F1/155—Electrodes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Electrodes Of Semiconductors (AREA)
AU2002312317A 2001-06-05 2002-06-04 Microelectronic photonic structure and device and method of forming the same Abandoned AU2002312317A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US29849601P 2001-06-05 2001-06-05
US60/298,496 2001-06-05
US36857902P 2002-03-29 2002-03-29
US60/368,579 2002-03-29
PCT/US2002/017711 WO2002099517A2 (en) 2001-06-05 2002-06-04 Microelectronic photonic structure and device and method of forming the same

Publications (1)

Publication Number Publication Date
AU2002312317A1 true AU2002312317A1 (en) 2002-12-16

Family

ID=26970704

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002312317A Abandoned AU2002312317A1 (en) 2001-06-05 2002-06-04 Microelectronic photonic structure and device and method of forming the same

Country Status (3)

Country Link
AU (1) AU2002312317A1 (en)
TW (1) TWI267893B (en)
WO (1) WO2002099517A2 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9000506B2 (en) 2010-11-19 2015-04-07 Panasonic Intellectual Property Management Co., Ltd. Variable resistance nonvolatile memory element and method for manufacturing the same
US10710070B2 (en) 2015-11-24 2020-07-14 Arizona Board Of Regents On Behalf Of Arizona State University Low-voltage microfluidic valve device and system for regulating the flow of fluid
US11127694B2 (en) 2017-03-23 2021-09-21 Arizona Board Of Regents On Behalf Of Arizona State University Physical unclonable functions with copper-silicon oxide programmable metallization cells
US10466969B2 (en) 2017-05-08 2019-11-05 Arizona Board Of Regents On Behalf Of Arizona State University Tunable true random number generator using programmable metallization cell(s)
JP7170978B2 (en) * 2019-03-13 2022-11-15 株式会社デンソー optical deflector
US11244722B2 (en) 2019-09-20 2022-02-08 Arizona Board Of Regents On Behalf Of Arizona State University Programmable interposers for electrically connecting integrated circuits
US11935843B2 (en) 2019-12-09 2024-03-19 Arizona Board Of Regents On Behalf Of Arizona State University Physical unclonable functions with silicon-rich dielectric devices

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1588511A (en) * 1976-07-07 1981-04-23 Ici Ltd Electrochromic device
GB8928748D0 (en) * 1989-12-20 1990-02-28 Ici Plc Solid state electrochromic devices
US5761115A (en) * 1996-05-30 1998-06-02 Axon Technologies Corporation Programmable metallization cell structure and method of making same

Also Published As

Publication number Publication date
WO2002099517A2 (en) 2002-12-12
TWI267893B (en) 2006-12-01
WO2002099517A3 (en) 2003-08-07

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase