AU2001297025A1 - Optoelectronic and microelectronic devices including cubic znmgo and/or cdmgo alloys and methods of fabricating same - Google Patents
Optoelectronic and microelectronic devices including cubic znmgo and/or cdmgo alloys and methods of fabricating sameInfo
- Publication number
- AU2001297025A1 AU2001297025A1 AU2001297025A AU9702501A AU2001297025A1 AU 2001297025 A1 AU2001297025 A1 AU 2001297025A1 AU 2001297025 A AU2001297025 A AU 2001297025A AU 9702501 A AU9702501 A AU 9702501A AU 2001297025 A1 AU2001297025 A1 AU 2001297025A1
- Authority
- AU
- Australia
- Prior art keywords
- cdmgo
- znmgo
- optoelectronic
- alloys
- methods
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 229910045601 alloy Inorganic materials 0.000 title 1
- 239000000956 alloy Substances 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 238000004377 microelectronic Methods 0.000 title 1
- 230000005693 optoelectronics Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/28—Materials of the light emitting region containing only elements of Group II and Group VI of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/22—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds
- H01L29/221—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds including two or more compounds, e.g. alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Ceramic Engineering (AREA)
- Recrystallisation Techniques (AREA)
- Semiconductor Lasers (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Led Devices (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/687,519 | 2000-10-13 | ||
US09/687,519 US6423983B1 (en) | 2000-10-13 | 2000-10-13 | Optoelectronic and microelectronic devices including cubic ZnMgO and/or CdMgO alloys |
PCT/US2001/042640 WO2002031890A2 (en) | 2000-10-13 | 2001-10-12 | OPTOELECTRONIC AND MICROELECTRONIC DEVICES INCLUDING CUBIC ZnMgO AND/OR CdMgO ALLOYS AND METHODS OF FABRICATING SAME |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2001297025A1 true AU2001297025A1 (en) | 2002-04-22 |
Family
ID=24760730
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2001297025A Abandoned AU2001297025A1 (en) | 2000-10-13 | 2001-10-12 | Optoelectronic and microelectronic devices including cubic znmgo and/or cdmgo alloys and methods of fabricating same |
Country Status (3)
Country | Link |
---|---|
US (2) | US6423983B1 (en) |
AU (1) | AU2001297025A1 (en) |
WO (1) | WO2002031890A2 (en) |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU2001234468A1 (en) | 2000-01-19 | 2001-07-31 | North Carolina State University | Lanthanum oxide-based gate dielectrics for integrated circuit field effect transistors and methods of fabricating same |
GB2361480B (en) * | 2000-04-19 | 2002-06-19 | Murata Manufacturing Co | Method for forming p-type semiconductor film and light emitting device using the same |
WO2002001650A1 (en) * | 2000-06-26 | 2002-01-03 | University Of Maryland | Mgzno based uv detectors |
JP4540201B2 (en) * | 2000-09-13 | 2010-09-08 | 独立行政法人産業技術総合研究所 | Method for manufacturing semiconductor device having ZnO-based oxide semiconductor layer |
JP2003142479A (en) * | 2001-11-02 | 2003-05-16 | Fujitsu Ltd | Semiconductor device, method of forming epitaxial film, and laser ablation device |
JP3749498B2 (en) * | 2002-03-26 | 2006-03-01 | スタンレー電気株式会社 | Crystal growth substrate and ZnO-based compound semiconductor device |
KR100486889B1 (en) * | 2002-06-14 | 2005-05-03 | 학교법인고려중앙학원 | Method for manufacturing ZnMgO alloy powder by the mechanical alloying |
JP3905824B2 (en) * | 2002-11-25 | 2007-04-18 | 大阪府 | Single crystal gallium nitride localized substrate and manufacturing method thereof |
JP4034208B2 (en) * | 2003-02-25 | 2008-01-16 | ローム株式会社 | Transparent electrode |
CN1307707C (en) * | 2003-09-19 | 2007-03-28 | 中国科学院上海微系统与信息技术研究所 | Metal-isolation layer-semiconductor structure xontaining magnesiam-zinc-oxygen and preparing process |
US7081371B1 (en) * | 2004-09-02 | 2006-07-25 | University Of Puerto Rico | Fabrication of stable, wide-bandgap thin films of Mg, Zn and O |
CN100356642C (en) * | 2005-01-28 | 2007-12-19 | 浙江大学 | C-MgxZn1-xO/MgO multi-quantum sink heterogeneous structural materials and producing process thereof |
US8946674B2 (en) * | 2005-08-31 | 2015-02-03 | University Of Florida Research Foundation, Inc. | Group III-nitrides on Si substrates using a nanostructured interlayer |
US8222057B2 (en) * | 2006-08-29 | 2012-07-17 | University Of Florida Research Foundation, Inc. | Crack free multilayered devices, methods of manufacture thereof and articles comprising the same |
US8363775B1 (en) | 2006-11-27 | 2013-01-29 | The United States Of America As Represented By The Secretary Of The Navy | Doping of semiconductor materials by nuclear transmutation |
US8222740B2 (en) * | 2008-10-28 | 2012-07-17 | Jagdish Narayan | Zinc oxide based composites and methods for their fabrication |
US8362476B2 (en) * | 2009-03-18 | 2013-01-29 | University Of Central Florida Research Foundation, Inc. | Cubic semiconductor alloys for deep UV applications |
US8961687B2 (en) * | 2009-08-31 | 2015-02-24 | Alliance For Sustainable Energy, Llc | Lattice matched crystalline substrates for cubic nitride semiconductor growth |
US8575471B2 (en) * | 2009-08-31 | 2013-11-05 | Alliance For Sustainable Energy, Llc | Lattice matched semiconductor growth on crystalline metallic substrates |
US8507365B2 (en) * | 2009-12-21 | 2013-08-13 | Alliance For Sustainable Energy, Llc | Growth of coincident site lattice matched semiconductor layers and devices on crystalline substrates |
US9041027B2 (en) | 2010-12-01 | 2015-05-26 | Alliance For Sustainable Energy, Llc | Methods of producing free-standing semiconductors using sacrificial buffer layers and recyclable substrates |
US9425249B2 (en) | 2010-12-01 | 2016-08-23 | Alliance For Sustainable Energy, Llc | Coincident site lattice-matched growth of semiconductors on substrates using compliant buffer layers |
JP5660004B2 (en) * | 2011-10-27 | 2015-01-28 | トヨタ自動車株式会社 | Method for producing ZnMgO film |
CN103107244B (en) * | 2013-02-17 | 2015-12-02 | 淮阴师范学院 | The conductive film preparation method that a kind of cadmium oxide base transmission region is adjustable |
CN103074577B (en) * | 2013-02-17 | 2015-02-04 | 淮阴师范学院 | Cadmium magnesium oxide alloy transparent conductive thin film and preparation method thereof |
KR20160019253A (en) * | 2014-08-11 | 2016-02-19 | 에스케이하이닉스 주식회사 | Electronic device |
US10126165B2 (en) | 2015-07-28 | 2018-11-13 | Carrier Corporation | Radiation sensors |
US9928727B2 (en) | 2015-07-28 | 2018-03-27 | Carrier Corporation | Flame detectors |
US9865766B2 (en) | 2015-07-28 | 2018-01-09 | Carrier Corporation | Ultraviolet photodetectors and methods of making ultraviolet photodetectors |
US9806125B2 (en) | 2015-07-28 | 2017-10-31 | Carrier Corporation | Compositionally graded photodetectors |
RU2754888C1 (en) * | 2021-02-25 | 2021-09-08 | Федеральное государственное бюджетное учреждение науки Институт химии твердого тела Уральского отделения Российской академии наук | Method for obtaining an optical semiconductor material based on nanodispersed cadmium oxide doped with lithium |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5166257A (en) | 1991-02-19 | 1992-11-24 | Westvaco Corporation | Modified rosin esters and their use in printing inks |
US5406123A (en) | 1992-06-11 | 1995-04-11 | Engineering Research Ctr., North Carolina State Univ. | Single crystal titanium nitride epitaxial on silicon |
JP3947575B2 (en) | 1994-06-10 | 2007-07-25 | Hoya株式会社 | Conductive oxide and electrode using the same |
US5670798A (en) | 1995-03-29 | 1997-09-23 | North Carolina State University | Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact non-nitride buffer layer and methods of fabricating same |
US5679965A (en) * | 1995-03-29 | 1997-10-21 | North Carolina State University | Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact, non-nitride buffer layer and methods of fabricating same |
US5684309A (en) | 1996-07-11 | 1997-11-04 | North Carolina State University | Stacked quantum well aluminum indium gallium nitride light emitting diodes |
JPH10178202A (en) * | 1996-12-18 | 1998-06-30 | Mitsubishi Cable Ind Ltd | Manufacture of gan-based substrate |
US6057561A (en) * | 1997-03-07 | 2000-05-02 | Japan Science And Technology Corporation | Optical semiconductor element |
US6420742B1 (en) * | 2000-06-16 | 2002-07-16 | Micron Technology, Inc. | Ferroelectric memory transistor with high-k gate insulator and method of fabrication |
-
2000
- 2000-10-13 US US09/687,519 patent/US6423983B1/en not_active Expired - Lifetime
-
2001
- 2001-10-12 WO PCT/US2001/042640 patent/WO2002031890A2/en active Application Filing
- 2001-10-12 AU AU2001297025A patent/AU2001297025A1/en not_active Abandoned
-
2002
- 2002-01-15 US US10/050,077 patent/US6518077B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US6518077B2 (en) | 2003-02-11 |
US20020084466A1 (en) | 2002-07-04 |
US6423983B1 (en) | 2002-07-23 |
WO2002031890A3 (en) | 2003-03-06 |
WO2002031890A2 (en) | 2002-04-18 |
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