JPS5662380A - Light-infrared ray converting device - Google Patents

Light-infrared ray converting device

Info

Publication number
JPS5662380A
JPS5662380A JP13847779A JP13847779A JPS5662380A JP S5662380 A JPS5662380 A JP S5662380A JP 13847779 A JP13847779 A JP 13847779A JP 13847779 A JP13847779 A JP 13847779A JP S5662380 A JPS5662380 A JP S5662380A
Authority
JP
Japan
Prior art keywords
light
section
diode
visible light
infrared ray
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13847779A
Other languages
Japanese (ja)
Inventor
Shinji Nishiura
Kazusane Morita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP13847779A priority Critical patent/JPS5662380A/en
Publication of JPS5662380A publication Critical patent/JPS5662380A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/14—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
    • H01L31/147—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
    • H01L31/153—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To convert visible light or ultraviolet light into infrared rays without needing an external power source by a method wherein a solar cell and a luminous diode are made coexist in one GaAs board. CONSTITUTION:A solar cell 21 converting visible light or ultraviolet light into currents and a luminous diode section 22 having a P-N junction radiating infrared light by the currents are formed in a GaAs semiconductor board. In the figure (a), the diode section 22 is located at the side of the cell section 21; in the figure (b), the diode section 22 is positioned annularly surrounding the cell section 21. The diode sections in both figures each emit infrared light 32 when visible light or ultraviolet light 31 is projected.
JP13847779A 1979-10-26 1979-10-26 Light-infrared ray converting device Pending JPS5662380A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13847779A JPS5662380A (en) 1979-10-26 1979-10-26 Light-infrared ray converting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13847779A JPS5662380A (en) 1979-10-26 1979-10-26 Light-infrared ray converting device

Publications (1)

Publication Number Publication Date
JPS5662380A true JPS5662380A (en) 1981-05-28

Family

ID=15222977

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13847779A Pending JPS5662380A (en) 1979-10-26 1979-10-26 Light-infrared ray converting device

Country Status (1)

Country Link
JP (1) JPS5662380A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5941872A (en) * 1982-09-02 1984-03-08 Agency Of Ind Science & Technol Manufacture of photovoltaic device
US6435316B1 (en) 1998-03-23 2002-08-20 Mitsubishi Denki Kabushiki Kaisha Rope support device for elevator

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5941872A (en) * 1982-09-02 1984-03-08 Agency Of Ind Science & Technol Manufacture of photovoltaic device
US6435316B1 (en) 1998-03-23 2002-08-20 Mitsubishi Denki Kabushiki Kaisha Rope support device for elevator
CN1089720C (en) * 1998-03-23 2002-08-28 三菱电机株式会社 Rope support device for elevator

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