JPS5941872A - Manufacture of photovoltaic device - Google Patents
Manufacture of photovoltaic deviceInfo
- Publication number
- JPS5941872A JPS5941872A JP57151738A JP15173882A JPS5941872A JP S5941872 A JPS5941872 A JP S5941872A JP 57151738 A JP57151738 A JP 57151738A JP 15173882 A JP15173882 A JP 15173882A JP S5941872 A JPS5941872 A JP S5941872A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- ohmic electrode
- photovoltaic
- conductive paste
- elements
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 239000012212 insulator Substances 0.000 claims abstract description 8
- 239000010409 thin film Substances 0.000 abstract description 14
- 238000000034 method Methods 0.000 abstract description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 7
- 229910052799 carbon Inorganic materials 0.000 abstract description 7
- 239000011521 glass Substances 0.000 abstract description 4
- 229910004613 CdTe Inorganic materials 0.000 abstract description 3
- 238000010438 heat treatment Methods 0.000 abstract description 2
- 239000012535 impurity Substances 0.000 abstract description 2
- 238000007650 screen-printing Methods 0.000 abstract description 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 239000010408 film Substances 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 229910000906 Bronze Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/073—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は基板上に形成された複数個の光起電力素子から
なる光起電力装置の製造方法に関するもので、印刷方式
で製造される光起電力素子を短絡等のトラブルを発生さ
せることなく、確実に、かつ早く接続することができる
方法を提供するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a photovoltaic device including a plurality of photovoltaic elements formed on a substrate. To provide a method that enables reliable and quick connection without causing trouble.
従来、印刷方式で製造された基板上の複数個の光起電力
素子を接続するに際しては、接続されるべき素子の電極
部と、リード線、金属製の網等の接続片に、手ぬりで銀
ペーストなどの導電性のペーストを塗布し、両者を接続
させて素子同士を接続する方法がとられてきた。周知の
ように光起電力装置においては、光発電に役立つ部分を
可能な限り広い面積でとりたいために、光発電に直接関
係のない電極部分は可能なかぎり狭い面積におさえであ
る。Conventionally, when connecting multiple photovoltaic elements on a substrate manufactured by a printing method, the electrodes of the elements to be connected and the connecting pieces such as lead wires and metal nets are hand-painted. A method has been used to connect the elements by applying a conductive paste such as silver paste and connecting the two. As is well known, in a photovoltaic device, since it is desired to have as large an area as possible for a portion useful for photovoltaic generation, electrode portions that are not directly related to photovoltaic generation are kept as narrow as possible.
従って、従来の素子間の接続方法によれば、銀ペースト
がその狭い電極部分からはみ出し、銀ペーストが付着し
てはならない部分にまで拡大して付着することが多く、
短絡等のトラブルの原因になっていた０また、接続作業
には、こうした短絡等を避けるために細心の注意と根気
が必要であり、作業能率も低かった。さらに、狭い電極
である上に、短絡等を避けようとして安全を見積り、よ
り狭く銀ペーストを塗布しようとするため、銀ペースト
の付与面積は極度に小さくなり、素子と素子の接続の機
械的強度が小さくなるという欠点があった。Therefore, according to the conventional connection method between elements, the silver paste often protrudes from the narrow electrode portion and spreads and adheres to areas where it should not be attached.
Furthermore, the connection work required great care and patience in order to avoid such short circuits, resulting in low work efficiency. Furthermore, since the electrodes are narrow and the silver paste is applied narrower to avoid short circuits, the area where the silver paste is applied becomes extremely small, which reduces the mechanical strength of the connection between elements. The disadvantage was that it became smaller.
本発明は上記のような欠点を除去した光起電力装置の製
造方法を提供するものであり、基板上に形成した複数個
の光起電力素子を導電性ペーストにより互いに接続する
際、導電性ペーストの塗布以前に、導電性を塗布したく
ない素子部分を絶縁体で被覆し、しかる後に導電性ペー
ストを塗布して光起電力素子を接続することを特徴とす
る。The present invention provides a method for manufacturing a photovoltaic device that eliminates the above-mentioned drawbacks. The photovoltaic device is characterized in that before application of the photovoltaic elements, parts of the element where conductive paste is not desired are coated with an insulator, and then a conductive paste is applied to connect the photovoltaic elements.
以下本発明の製造方法について、実施例をあげて詳細に
説明する。The manufacturing method of the present invention will be described in detail below with reference to Examples.
〔実施例１〕
第１図は本発明の方法により得られた光起電力装置の断
面図であり、ガラス基板１上にスクリーン印刷と熱処理
で形成されたＣｄＳ 薄膜２があり、その上に同様に
形成されたＣｄＴｅ薄膜３がある。[Example 1] Fig. 1 is a cross-sectional view of a photovoltaic device obtained by the method of the present invention, in which there is a CdS thin film 2 formed by screen printing and heat treatment on a glass substrate 1, and a similar film is formed on the glass substrate 1. There is a CdTe thin film 3 formed on the substrate.
さらにその上に微滑のアクセプター不純物を含有するカ
ーボン薄膜４があり光起電力素子が形成されている。素
子を単一で使う時は上記ＣｄＳ薄膜２とカーボン薄膜４
にそれぞれオーミック電極５．６を付して、リード線に
より光起電力をとり出せるのであるが、複数個の素子を
接続して使う時はオーミック電極５と他の素子のオーミ
ック電極間を実施して絶縁体９をオーミック電極６の上
に被覆した後、導電性ペースト７を左側の素子のオーミ
ック電極６と右側の素子のオーミック電極５の両者にか
ぶるように塗布しである。従来の接続法によれば、絶縁
体９が導電性ペースト７の塗布時には存在しないため、
導電性ペースト７が左側の素子のオーミック電極６もし
くはカーボン薄膜４に達して短絡する場合が多くあった
が、本発明の実施により、短絡は完全に防止される。ま
た短絡任防止するために従来、導体７の塗布に細心の注
意が必要であったが、本発明の実施によりその必要はな
くなる。斤卦、本実施例では導電性ペースト７としては
リン青銅の網に銀ペイントを塗布したもの、絶縁体９と
しては樹脂を使用し、いずれも印刷により塗布した。Furthermore, there is a carbon thin film 4 containing slightly slippery acceptor impurities thereon, forming a photovoltaic element. When using a single element, use the above CdS thin film 2 and carbon thin film 4.
By attaching ohmic electrodes 5 and 6 to each element, the photovoltaic force can be taken out using lead wires, but when using multiple elements connected, it is necessary to connect ohmic electrodes 5 and 6 to the ohmic electrodes of other elements. After covering the ohmic electrode 6 with the insulator 9, a conductive paste 7 is applied so as to cover both the ohmic electrode 6 of the left element and the ohmic electrode 5 of the right element. According to the conventional connection method, since the insulator 9 is not present when the conductive paste 7 is applied,
There were many cases in which the conductive paste 7 reached the ohmic electrode 6 or the carbon thin film 4 of the left element and caused a short circuit, but by implementing the present invention, the short circuit is completely prevented. Furthermore, in the past, it was necessary to take great care in applying the conductor 7 to prevent short circuits, but this is no longer necessary with the implementation of the present invention. In this example, a phosphor bronze net coated with silver paint was used as the conductive paste 7, and a resin was used as the insulator 9, both of which were applied by printing.
〔実施例２〕
第２図は本実施例で得られた 光起電力装置の断面図で
あり、実施例１とほぼ同様であるが、導電性ペースト７
を広い面積に塗布した点が異なっのオーミック電極６と
カーボン薄膜４に接触して短絡現象を起すが、本実施例
では絶縁体９によってそれを防止することができる。更
に本実施例では、導電性ペースト７が広い面積に塗布さ
れているために右側の素子と左側の素子の接続の機械的
強度が飛躍的に大きくなる。 １以上
の説明から明らかなように、本発明によれば基板上に形
成された複数個の光起電力素子を確実に、能率的に、か
つ強力に接続することができるため、その実用上の価値
は大なるものがある。[Example 2] Figure 2 is a cross-sectional view of the photovoltaic device obtained in this example, which is almost the same as Example 1, but with conductive paste 7.
Although the ohmic electrode 6, which is different in that it is applied over a wide area, comes into contact with the carbon thin film 4 and causes a short circuit phenomenon, this can be prevented by the insulator 9 in this embodiment. Furthermore, in this embodiment, since the conductive paste 7 is applied over a wide area, the mechanical strength of the connection between the right element and the left element is dramatically increased. As is clear from the above description, according to the present invention, a plurality of photovoltaic elements formed on a substrate can be reliably, efficiently, and strongly connected, and therefore, the present invention has practical advantages. There is great value.
第１図および第２図は本発明の各実施例により得られた
光起電力装置の断面図である。
１・・・・・・ガラス基板、２・・・・・・ＣｄＳ
薄膜、３・・・・・・ＣｄＴｅ薄膜、４・・・・・・カ
ーボン膜、６，６・・・・・・オーミック電極、７・・
・・・・導電性ペースト、９・・・・・・絶縁体。
特許出願人 工業技術院長 石 坂 誠 −第１図
りFIGS. 1 and 2 are cross-sectional views of photovoltaic devices obtained according to each embodiment of the present invention. 1...Glass substrate, 2...CdS
Thin film, 3... CdTe thin film, 4... Carbon film, 6, 6... Ohmic electrode, 7...
...Conductive paste, 9...Insulator. Patent applicant Makoto Ishizaka, Director General of the Agency of Industrial Science and Technology - First Plan
Claims (1)
に接続するに際し、前記各光起電力素子１のうち、接続
に関与しない部分を絶縁体で被覆した後、前記各光起電
力素子の電極間に導電性ペーストを塗布して電気的な接
続を行なうことを特徴とする光起電力装置の製造方法。When electrically connecting a plurality of photovoltaic elements formed on a substrate to each other, after covering the portions of the photovoltaic elements 1 that are not involved in connection with an insulator, each of the photovoltaic elements 1 is 1. A method of manufacturing a photovoltaic device, comprising applying a conductive paste between electrodes to establish an electrical connection.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57151738A JPS5941872A (en) | 1982-09-02 | 1982-09-02 | Manufacture of photovoltaic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57151738A JPS5941872A (en) | 1982-09-02 | 1982-09-02 | Manufacture of photovoltaic device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5941872A true JPS5941872A (en) | 1984-03-08 |
Family
ID=15525205
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57151738A Pending JPS5941872A (en) | 1982-09-02 | 1982-09-02 | Manufacture of photovoltaic device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5941872A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0186351A2 (en) * | 1984-12-28 | 1986-07-02 | Standard Oil Commercial Development Company | Method of making current collector grid and materials therefor |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS562261B2 (en) * | 1976-12-23 | 1981-01-19 | ||
| JPS5662380A (en) * | 1979-10-26 | 1981-05-28 | Fuji Electric Co Ltd | Light-infrared ray converting device |
-
1982
- 1982-09-02 JP JP57151738A patent/JPS5941872A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS562261B2 (en) * | 1976-12-23 | 1981-01-19 | ||
| JPS5662380A (en) * | 1979-10-26 | 1981-05-28 | Fuji Electric Co Ltd | Light-infrared ray converting device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0186351A2 (en) * | 1984-12-28 | 1986-07-02 | Standard Oil Commercial Development Company | Method of making current collector grid and materials therefor |
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