ATE74467T1 - Lichtemittierende halbleitervorrichtung. - Google Patents

Lichtemittierende halbleitervorrichtung.

Info

Publication number
ATE74467T1
ATE74467T1 AT88300455T AT88300455T ATE74467T1 AT E74467 T1 ATE74467 T1 AT E74467T1 AT 88300455 T AT88300455 T AT 88300455T AT 88300455 T AT88300455 T AT 88300455T AT E74467 T1 ATE74467 T1 AT E74467T1
Authority
AT
Austria
Prior art keywords
type
region
emitting period
voltage
semiconductor device
Prior art date
Application number
AT88300455T
Other languages
English (en)
Inventor
Masamichi Yamanishi
Ikuo Suemune
Taguchi Shokuinshukusha
Saiji-Cho Taguchi
Original Assignee
Univ Hiroshima
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Hiroshima filed Critical Univ Hiroshima
Application granted granted Critical
Publication of ATE74467T1 publication Critical patent/ATE74467T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0041—Devices characterised by their operation characterised by field-effect operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06203—Transistor-type lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
    • H01S5/06216—Pulse modulation or generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3222—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIVBVI compounds, e.g. PbSSe-laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3428—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers layer orientation perpendicular to the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
AT88300455T 1987-01-23 1988-01-20 Lichtemittierende halbleitervorrichtung. ATE74467T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP62012552A JPS63181486A (ja) 1987-01-23 1987-01-23 半導体発光装置
EP88300455A EP0276140B1 (de) 1987-01-23 1988-01-20 Lichtemittierende Halbleitervorrichtung

Publications (1)

Publication Number Publication Date
ATE74467T1 true ATE74467T1 (de) 1992-04-15

Family

ID=11808498

Family Applications (1)

Application Number Title Priority Date Filing Date
AT88300455T ATE74467T1 (de) 1987-01-23 1988-01-20 Lichtemittierende halbleitervorrichtung.

Country Status (6)

Country Link
US (1) US4845535A (de)
EP (1) EP0276140B1 (de)
JP (1) JPS63181486A (de)
AT (1) ATE74467T1 (de)
CA (1) CA1292549C (de)
DE (1) DE3869628D1 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3732626A1 (de) * 1987-09-28 1989-04-06 Siemens Ag Photo-lasertransistor
US5073892A (en) * 1989-06-12 1991-12-17 Hitachi, Ltd. Semiconductor laser device
JP2889594B2 (ja) * 1989-06-12 1999-05-10 株式会社日立製作所 半導体光素子および光通信システム
US5132764A (en) * 1991-03-21 1992-07-21 Texas Instruments Incorporated Multilayer base heterojunction bipolar transistor
JPH06347734A (ja) * 1993-06-11 1994-12-22 Nec Corp 面型光スイッチ
US5543737A (en) * 1995-02-10 1996-08-06 Energy Conversion Devices, Inc. Logical operation circuit employing two-terminal chalcogenide switches
KR20050085059A (ko) * 2002-11-20 2005-08-29 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 방사-방출 반도체 디바이스 및 방사-방출 반도체디바이스의 제조 방법
US7998807B2 (en) * 2003-08-22 2011-08-16 The Board Of Trustees Of The University Of Illinois Method for increasing the speed of a light emitting biopolar transistor device
US7696536B1 (en) * 2003-08-22 2010-04-13 The Board Of Trustees Of The University Of Illinois Semiconductor method and device
US7286583B2 (en) * 2003-08-22 2007-10-23 The Board Of Trustees Of The University Of Illinois Semiconductor laser devices and methods
US7091082B2 (en) 2003-08-22 2006-08-15 The Board Of Trustees Of The University Of Illinois Semiconductor method and device
US7354780B2 (en) * 2003-08-22 2008-04-08 The Board Of Trustees Of The University Of Illinois Semiconductor light emitting devices and methods
US20050040432A1 (en) * 2003-08-22 2005-02-24 The Board Of Trustees Of The University Of Illinois Light emitting device and method
US7535034B2 (en) * 2006-02-27 2009-05-19 The Board Of Trustees Of The University Of Illinois PNP light emitting transistor and method
US7711015B2 (en) * 2007-04-02 2010-05-04 The Board Of Trustees Of The University Of Illinois Method for controlling operation of light emitting transistors and laser transistors
US8154127B1 (en) 2007-07-30 2012-04-10 Hewlett-Packard Development Company, L.P. Optical device and method of making the same
JP5676273B2 (ja) 2008-01-21 2015-02-25 インシアヴァ （ピーテーワイ） リミテッド パンチスルー効果を利用した半導体発光デバイス
CA2713070C (en) * 2008-02-01 2016-07-26 Insiava (Pty) Limited Semiconductor light emitting device comprising heterojunction
US8179937B2 (en) * 2009-01-08 2012-05-15 Quantum Electro Opto Systems Sdn. Bhd. High speed light emitting semiconductor methods and devices
JP2013211355A (ja) * 2012-03-30 2013-10-10 Oki Data Corp ３端子発光素子、３端子発光素子アレイ、プリントヘッドおよび画像形成装置
US9948062B2 (en) * 2015-09-14 2018-04-17 Sensor Electronic Technology, Inc. Solid-state lighting structure with light modulation control

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57176785A (en) * 1981-04-22 1982-10-30 Hitachi Ltd Semiconductor laser device
US4475200A (en) * 1981-12-03 1984-10-02 Rockwell International Corporation Semiconductor laser beam scanner
JPS601874A (ja) * 1983-06-17 1985-01-08 Masamichi Yamanishi 制御電極付半導体発光装置
JPS60167390A (ja) * 1984-02-09 1985-08-30 Matsushita Electric Ind Co Ltd 半導体発光素子

Also Published As

Publication number Publication date
EP0276140B1 (de) 1992-04-01
JPS63181486A (ja) 1988-07-26
CA1292549C (en) 1991-11-26
EP0276140A2 (de) 1988-07-27
EP0276140A3 (en) 1989-07-26
JPH0523516B2 (de) 1993-04-02
DE3869628D1 (de) 1992-05-07
US4845535A (en) 1989-07-04

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Legal Events

Date Code Title Description
UEP Publication of translation of european patent specification
REN Ceased due to non-payment of the annual fee