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Priority to KR7403155ApriorityCriticalpatent/KR790000585B1/en
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A technique for the fabrication of a gallium phosphide(Gap) P-N electroluminescent junction device capable of emitting red light involves growth of an N-type Gap layer(12) upon a p-type soln. Grown Gap(13) seed by conventional liq. phase epitaxy techniques. The max. oxygen concentration at the space charge layer is 1 × 1012-5 × 1014 cm-3 in a class of P-N junction under reverse bias condition.
KR7403155A1974-07-251974-07-25Gallium phosphide red-light emmision element
KR790000585B1
(en)