GB1308790A - Method of producing a vapour growth layer of gaas1-xpx - Google Patents

Method of producing a vapour growth layer of gaas1-xpx

Info

Publication number
GB1308790A
GB1308790A GB5106370A GB5106370A GB1308790A GB 1308790 A GB1308790 A GB 1308790A GB 5106370 A GB5106370 A GB 5106370A GB 5106370 A GB5106370 A GB 5106370A GB 1308790 A GB1308790 A GB 1308790A
Authority
GB
United Kingdom
Prior art keywords
growth layer
gaas1
xpx
producing
gaas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5106370A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of GB1308790A publication Critical patent/GB1308790A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

1308790 Light-emitting GaAs 1-n P n diode HITACHI Ltd 27 Oct 1970 [27 Oct 1969] 51063/70 Heading H1K [Also in Division C1] A light-emitting diode comprises an epitaxial growth layer of GaAs 1-n P n where (0<n<1) or a need of Ga or Si, GaAs or GaAsP and having P-and N-type regions comprising impurities, e.g. Zn and Se respectively. The diode emits red light at 6540 Š when supplied with a forward current density of 4 A/cm.<SP>2</SP>.
GB5106370A 1969-10-27 1970-10-27 Method of producing a vapour growth layer of gaas1-xpx Expired GB1308790A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8523569A JPS497993B1 (en) 1969-10-27 1969-10-27

Publications (1)

Publication Number Publication Date
GB1308790A true GB1308790A (en) 1973-03-07

Family

ID=13852884

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5106370A Expired GB1308790A (en) 1969-10-27 1970-10-27 Method of producing a vapour growth layer of gaas1-xpx

Country Status (3)

Country Link
JP (1) JPS497993B1 (en)
GB (1) GB1308790A (en)
NL (1) NL151911B (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2159328A (en) * 1984-05-21 1985-11-27 Christopher Frank Mcconnell Vessel and apparatus for treating wafers with fluids
US4633893A (en) * 1984-05-21 1987-01-06 Cfm Technologies Limited Partnership Apparatus for treating semiconductor wafers
US4738272A (en) * 1984-05-21 1988-04-19 Mcconnell Christopher F Vessel and system for treating wafers with fluids
US4740249A (en) * 1984-05-21 1988-04-26 Christopher F. McConnell Method of treating wafers with fluid
US4856544A (en) * 1984-05-21 1989-08-15 Cfm Technologies, Inc. Vessel and system for treating wafers with fluids
US6136724A (en) * 1997-02-18 2000-10-24 Scp Global Technologies Multiple stage wet processing chamber

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01123133A (en) * 1987-11-09 1989-05-16 Hitachi Ltd Spectrophotometer

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2159328A (en) * 1984-05-21 1985-11-27 Christopher Frank Mcconnell Vessel and apparatus for treating wafers with fluids
US4633893A (en) * 1984-05-21 1987-01-06 Cfm Technologies Limited Partnership Apparatus for treating semiconductor wafers
US4738272A (en) * 1984-05-21 1988-04-19 Mcconnell Christopher F Vessel and system for treating wafers with fluids
US4740249A (en) * 1984-05-21 1988-04-26 Christopher F. McConnell Method of treating wafers with fluid
US4856544A (en) * 1984-05-21 1989-08-15 Cfm Technologies, Inc. Vessel and system for treating wafers with fluids
US6136724A (en) * 1997-02-18 2000-10-24 Scp Global Technologies Multiple stage wet processing chamber

Also Published As

Publication number Publication date
NL151911B (en) 1977-01-17
NL7015756A (en) 1971-04-29
JPS497993B1 (en) 1974-02-23

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee