JPS6453442A - Gaas semiconductor device - Google Patents

Gaas semiconductor device

Info

Publication number
JPS6453442A
JPS6453442A JP19131888A JP19131888A JPS6453442A JP S6453442 A JPS6453442 A JP S6453442A JP 19131888 A JP19131888 A JP 19131888A JP 19131888 A JP19131888 A JP 19131888A JP S6453442 A JPS6453442 A JP S6453442A
Authority
JP
Japan
Prior art keywords
region
driving
load
light
sit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP19131888A
Other languages
Japanese (ja)
Other versions
JPH0378788B2 (en
Inventor
Junichi Nishizawa
Tadahiro Omi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Priority to JP19131888A priority Critical patent/JPS6453442A/en
Publication of JPS6453442A publication Critical patent/JPS6453442A/en
Publication of JPH0378788B2 publication Critical patent/JPH0378788B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Led Devices (AREA)
  • Light Receiving Elements (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To offer an integrated circuit provided with an optoelectric transducer, which is operated at a very high speed, by a method wherein a light-emitting diode is provided so as to be adjacent to the drain region of a vertical type static induction transistor constituted in a manner that the collector region of a bipolar transistor is common with the gate region of the static induction transistor. CONSTITUTION:An n<+> region 61 is used as a source of a driving static induction transistor (SIT) and an n<-> region 62 is used in common as a channel of the driving SIT and as a base of a load bipolar transistor (BJT). A p<+> region 63 is an emitter of the load BJT and a p<+> region 64 is a collector of the load BJT and at the same time, is a gate of the driving SIT. An n<+> region 66 is a drain of the driving SIT. When a driving SITT3 is in a state of disconnection, a drain of the T3 is in a high level. Therefore, a current to flow through a load transistor T2 flows through a light-emitting diode D and light is radiated outside. When the T3 is in a state of continuity, the output of an output terminal of the T3 becomes a low-level one. Therefore, no current flows through the diode D and no light is radiated.
JP19131888A 1988-07-30 1988-07-30 Gaas semiconductor device Granted JPS6453442A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19131888A JPS6453442A (en) 1988-07-30 1988-07-30 Gaas semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19131888A JPS6453442A (en) 1988-07-30 1988-07-30 Gaas semiconductor device

Publications (2)

Publication Number Publication Date
JPS6453442A true JPS6453442A (en) 1989-03-01
JPH0378788B2 JPH0378788B2 (en) 1991-12-16

Family

ID=16272562

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19131888A Granted JPS6453442A (en) 1988-07-30 1988-07-30 Gaas semiconductor device

Country Status (1)

Country Link
JP (1) JPS6453442A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002076020A (en) * 2000-08-31 2002-03-15 Sumitomo Electric Ind Ltd Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002076020A (en) * 2000-08-31 2002-03-15 Sumitomo Electric Ind Ltd Semiconductor device

Also Published As

Publication number Publication date
JPH0378788B2 (en) 1991-12-16

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