JPS6453442A - Gaas semiconductor device - Google Patents
Gaas semiconductor deviceInfo
- Publication number
- JPS6453442A JPS6453442A JP19131888A JP19131888A JPS6453442A JP S6453442 A JPS6453442 A JP S6453442A JP 19131888 A JP19131888 A JP 19131888A JP 19131888 A JP19131888 A JP 19131888A JP S6453442 A JPS6453442 A JP S6453442A
- Authority
- JP
- Japan
- Prior art keywords
- region
- driving
- load
- light
- sit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Led Devices (AREA)
- Light Receiving Elements (AREA)
- Bipolar Integrated Circuits (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To offer an integrated circuit provided with an optoelectric transducer, which is operated at a very high speed, by a method wherein a light-emitting diode is provided so as to be adjacent to the drain region of a vertical type static induction transistor constituted in a manner that the collector region of a bipolar transistor is common with the gate region of the static induction transistor. CONSTITUTION:An n<+> region 61 is used as a source of a driving static induction transistor (SIT) and an n<-> region 62 is used in common as a channel of the driving SIT and as a base of a load bipolar transistor (BJT). A p<+> region 63 is an emitter of the load BJT and a p<+> region 64 is a collector of the load BJT and at the same time, is a gate of the driving SIT. An n<+> region 66 is a drain of the driving SIT. When a driving SITT3 is in a state of disconnection, a drain of the T3 is in a high level. Therefore, a current to flow through a load transistor T2 flows through a light-emitting diode D and light is radiated outside. When the T3 is in a state of continuity, the output of an output terminal of the T3 becomes a low-level one. Therefore, no current flows through the diode D and no light is radiated.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19131888A JPS6453442A (en) | 1988-07-30 | 1988-07-30 | Gaas semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19131888A JPS6453442A (en) | 1988-07-30 | 1988-07-30 | Gaas semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6453442A true JPS6453442A (en) | 1989-03-01 |
JPH0378788B2 JPH0378788B2 (en) | 1991-12-16 |
Family
ID=16272562
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP19131888A Granted JPS6453442A (en) | 1988-07-30 | 1988-07-30 | Gaas semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6453442A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002076020A (en) * | 2000-08-31 | 2002-03-15 | Sumitomo Electric Ind Ltd | Semiconductor device |
-
1988
- 1988-07-30 JP JP19131888A patent/JPS6453442A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002076020A (en) * | 2000-08-31 | 2002-03-15 | Sumitomo Electric Ind Ltd | Semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPH0378788B2 (en) | 1991-12-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR840004280A (en) | Display drive | |
TW330355B (en) | Semiconductor light emitting element driving circuit | |
DE3772994D1 (en) | POWER STAGE IN BRIDGE CONTROL. | |
KR890009004A (en) | Bipolar-CMOS Circuit | |
ES8301391A1 (en) | High-voltage semiconductor switch. | |
JPS57167671A (en) | Semiconductor integrated circuit | |
KR870009478A (en) | Input circuit | |
JPS6453442A (en) | Gaas semiconductor device | |
FR2430096A1 (en) | INTEGRATED LOGIC CIRCUIT WITH DOOR CIRCUITS | |
JPS57100743A (en) | Semiconductor integrated circuit device | |
JPS6477319A (en) | Non-stacked ecl type and function circuit | |
JPS6431452A (en) | Semiconductor integrated circuit containing current mirror | |
JPS57162970A (en) | Delay circuit | |
JPS5655070A (en) | Semiconductor bidirectional switch | |
DE69227106D1 (en) | Structure to prevent the switching through of a parasitic diode located in an epitaxial well of integrated circuits | |
JPS5558566A (en) | Semiconductor integrated circuit and semiconductor device | |
JPS5689130A (en) | Electronic circuit | |
JPS56165356A (en) | Mos semiconductor device | |
JPS5724557A (en) | Semiconductor device | |
JPS5735366A (en) | Semiconductor integrated circuit device | |
SU1422379A1 (en) | Pulse shaper | |
JPS6465922A (en) | Semiconductor integrated circuit | |
JPS57198665A (en) | Semiconductor device | |
JPS56103488A (en) | Driving circuit of semiconductor laser | |
JPS57198657A (en) | Semiconductor device |