DE3869628D1 - Lichtemittierende halbleitervorrichtung. - Google Patents
Lichtemittierende halbleitervorrichtung.Info
- Publication number
- DE3869628D1 DE3869628D1 DE8888300455T DE3869628T DE3869628D1 DE 3869628 D1 DE3869628 D1 DE 3869628D1 DE 8888300455 T DE8888300455 T DE 8888300455T DE 3869628 T DE3869628 T DE 3869628T DE 3869628 D1 DE3869628 D1 DE 3869628D1
- Authority
- DE
- Germany
- Prior art keywords
- type
- region
- emitting period
- voltage
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000000969 carrier Substances 0.000 abstract 3
- 230000006798 recombination Effects 0.000 abstract 1
- 238000005215 recombination Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0041—Devices characterised by their operation characterised by field-effect operation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
- H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/06203—Transistor-type lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
- H01S5/06216—Pulse modulation or generation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3222—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIVBVI compounds, e.g. PbSSe-laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3428—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers layer orientation perpendicular to the substrate
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62012552A JPS63181486A (ja) | 1987-01-23 | 1987-01-23 | 半導体発光装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3869628D1 true DE3869628D1 (de) | 1992-05-07 |
Family
ID=11808498
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8888300455T Expired - Lifetime DE3869628D1 (de) | 1987-01-23 | 1988-01-20 | Lichtemittierende halbleitervorrichtung. |
Country Status (6)
Country | Link |
---|---|
US (1) | US4845535A (de) |
EP (1) | EP0276140B1 (de) |
JP (1) | JPS63181486A (de) |
AT (1) | ATE74467T1 (de) |
CA (1) | CA1292549C (de) |
DE (1) | DE3869628D1 (de) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3732626A1 (de) * | 1987-09-28 | 1989-04-06 | Siemens Ag | Photo-lasertransistor |
JP2889594B2 (ja) * | 1989-06-12 | 1999-05-10 | 株式会社日立製作所 | 半導体光素子および光通信システム |
US5073892A (en) * | 1989-06-12 | 1991-12-17 | Hitachi, Ltd. | Semiconductor laser device |
US5132764A (en) * | 1991-03-21 | 1992-07-21 | Texas Instruments Incorporated | Multilayer base heterojunction bipolar transistor |
JPH06347734A (ja) * | 1993-06-11 | 1994-12-22 | Nec Corp | 面型光スイッチ |
US5543737A (en) * | 1995-02-10 | 1996-08-06 | Energy Conversion Devices, Inc. | Logical operation circuit employing two-terminal chalcogenide switches |
CN100429784C (zh) * | 2002-11-20 | 2008-10-29 | 皇家飞利浦电子股份有限公司 | 辐射发射半导体器件和制造该器件的方法 |
US20050040432A1 (en) * | 2003-08-22 | 2005-02-24 | The Board Of Trustees Of The University Of Illinois | Light emitting device and method |
US7998807B2 (en) * | 2003-08-22 | 2011-08-16 | The Board Of Trustees Of The University Of Illinois | Method for increasing the speed of a light emitting biopolar transistor device |
US7091082B2 (en) | 2003-08-22 | 2006-08-15 | The Board Of Trustees Of The University Of Illinois | Semiconductor method and device |
US7696536B1 (en) * | 2003-08-22 | 2010-04-13 | The Board Of Trustees Of The University Of Illinois | Semiconductor method and device |
US7354780B2 (en) * | 2003-08-22 | 2008-04-08 | The Board Of Trustees Of The University Of Illinois | Semiconductor light emitting devices and methods |
US7286583B2 (en) * | 2003-08-22 | 2007-10-23 | The Board Of Trustees Of The University Of Illinois | Semiconductor laser devices and methods |
US7535034B2 (en) * | 2006-02-27 | 2009-05-19 | The Board Of Trustees Of The University Of Illinois | PNP light emitting transistor and method |
US7711015B2 (en) * | 2007-04-02 | 2010-05-04 | The Board Of Trustees Of The University Of Illinois | Method for controlling operation of light emitting transistors and laser transistors |
US8154127B1 (en) | 2007-07-30 | 2012-04-10 | Hewlett-Packard Development Company, L.P. | Optical device and method of making the same |
JP5676273B2 (ja) | 2008-01-21 | 2015-02-25 | インシアヴァ (ピーテーワイ) リミテッド | パンチスルー効果を利用した半導体発光デバイス |
CN101933169B (zh) * | 2008-02-01 | 2012-07-11 | Insiava(控股)有限公司 | 包括异质结的半导体发光器件 |
US8179937B2 (en) * | 2009-01-08 | 2012-05-15 | Quantum Electro Opto Systems Sdn. Bhd. | High speed light emitting semiconductor methods and devices |
JP2013211355A (ja) * | 2012-03-30 | 2013-10-10 | Oki Data Corp | 3端子発光素子、3端子発光素子アレイ、プリントヘッドおよび画像形成装置 |
US9948062B2 (en) * | 2015-09-14 | 2018-04-17 | Sensor Electronic Technology, Inc. | Solid-state lighting structure with light modulation control |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57176785A (en) * | 1981-04-22 | 1982-10-30 | Hitachi Ltd | Semiconductor laser device |
US4475200A (en) * | 1981-12-03 | 1984-10-02 | Rockwell International Corporation | Semiconductor laser beam scanner |
JPS601874A (ja) * | 1983-06-17 | 1985-01-08 | Masamichi Yamanishi | 制御電極付半導体発光装置 |
JPS60167390A (ja) * | 1984-02-09 | 1985-08-30 | Matsushita Electric Ind Co Ltd | 半導体発光素子 |
-
1987
- 1987-01-23 JP JP62012552A patent/JPS63181486A/ja active Granted
-
1988
- 1988-01-19 US US07/147,553 patent/US4845535A/en not_active Expired - Lifetime
- 1988-01-20 EP EP88300455A patent/EP0276140B1/de not_active Expired - Lifetime
- 1988-01-20 AT AT88300455T patent/ATE74467T1/de not_active IP Right Cessation
- 1988-01-20 DE DE8888300455T patent/DE3869628D1/de not_active Expired - Lifetime
- 1988-01-22 CA CA000557124A patent/CA1292549C/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
CA1292549C (en) | 1991-11-26 |
ATE74467T1 (de) | 1992-04-15 |
EP0276140B1 (de) | 1992-04-01 |
EP0276140A2 (de) | 1988-07-27 |
JPS63181486A (ja) | 1988-07-26 |
JPH0523516B2 (de) | 1993-04-02 |
EP0276140A3 (en) | 1989-07-26 |
US4845535A (en) | 1989-07-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |