ATE500359T1 - Verfahren und system zur bildung von sic- kristallen mit räumlich einheitlichen dotierungsverunreinigungen - Google Patents
Verfahren und system zur bildung von sic- kristallen mit räumlich einheitlichen dotierungsverunreinigungenInfo
- Publication number
- ATE500359T1 ATE500359T1 AT06750491T AT06750491T ATE500359T1 AT E500359 T1 ATE500359 T1 AT E500359T1 AT 06750491 T AT06750491 T AT 06750491T AT 06750491 T AT06750491 T AT 06750491T AT E500359 T1 ATE500359 T1 AT E500359T1
- Authority
- AT
- Austria
- Prior art keywords
- capsule
- siccystals
- dopping
- impurities
- forming
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1004—Apparatus with means for measuring, testing, or sensing
- Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1016—Apparatus with means for treating single-crystal [e.g., heat treating]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
- Y10T117/108—Including a solid member other than seed or product contacting the liquid [e.g., crucible, immersed heating element]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US67294505P | 2005-04-19 | 2005-04-19 | |
US11/405,368 US7608524B2 (en) | 2005-04-19 | 2006-04-17 | Method of and system for forming SiC crystals having spatially uniform doping impurities |
PCT/US2006/014463 WO2006113657A1 (en) | 2005-04-19 | 2006-04-18 | Method of and system for forming sic crystals having spatially uniform doping impurities |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE500359T1 true ATE500359T1 (de) | 2011-03-15 |
Family
ID=36808698
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT06750491T ATE500359T1 (de) | 2005-04-19 | 2006-04-18 | Verfahren und system zur bildung von sic- kristallen mit räumlich einheitlichen dotierungsverunreinigungen |
Country Status (7)
Country | Link |
---|---|
US (3) | US7608524B2 (de) |
EP (1) | EP1874985B1 (de) |
JP (1) | JP5033788B2 (de) |
CN (1) | CN101163824B (de) |
AT (1) | ATE500359T1 (de) |
DE (1) | DE602006020427D1 (de) |
WO (1) | WO2006113657A1 (de) |
Families Citing this family (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7608524B2 (en) * | 2005-04-19 | 2009-10-27 | Ii-Vi Incorporated | Method of and system for forming SiC crystals having spatially uniform doping impurities |
US20090053125A1 (en) * | 2007-08-20 | 2009-02-26 | Il-Vi Incorporated | Stabilizing 4H Polytype During Sublimation Growth Of SiC Single Crystals |
JP5031651B2 (ja) * | 2008-04-21 | 2012-09-19 | 新日本製鐵株式会社 | 炭化珪素単結晶インゴットの製造方法 |
DE112009003667B4 (de) * | 2008-12-08 | 2024-04-25 | Ii-Vi Inc. | Verbessertes axial-gradient-transport- (agt-) züchtungsverfahren und -apparat unter anwendung von resistivem erhitzen |
DE102008063124B4 (de) * | 2008-12-24 | 2013-05-16 | Sicrystal Ag | Herstellungsverfahren für einen gleichmäßig dotierten SiC-Volumeneinkristall und gleichmäßig dotiertes SiC-Substrat |
DE102008063129B4 (de) | 2008-12-24 | 2013-05-16 | Sicrystal Ag | Herstellungsverfahren für einen codotierten SiC-Volumeneinkristall und hochohmiges SiC-Substrat |
JP5779171B2 (ja) | 2009-03-26 | 2015-09-16 | トゥー‐シックス・インコーポレイテッド | SiC単結晶の昇華成長方法及び装置 |
US8377806B2 (en) * | 2010-04-28 | 2013-02-19 | Cree, Inc. | Method for controlled growth of silicon carbide and structures produced by same |
JP5659381B2 (ja) * | 2010-07-29 | 2015-01-28 | 株式会社デンソー | 炭化珪素単結晶の製造装置および製造方法 |
JP5839315B2 (ja) * | 2010-07-30 | 2016-01-06 | 株式会社デンソー | 炭化珪素単結晶およびその製造方法 |
KR101731239B1 (ko) | 2012-04-20 | 2017-04-28 | 투-식스 인코포레이티드 | 대구경 고품질 SiC 단결정, 방법 및 장치 |
WO2013177496A1 (en) | 2012-05-24 | 2013-11-28 | Ii-Vi Incorporated | Vanadium compensated, si sic single crystals of nu and pi type and the crystal growth process thereof |
US8860040B2 (en) | 2012-09-11 | 2014-10-14 | Dow Corning Corporation | High voltage power semiconductor devices on SiC |
US9017804B2 (en) * | 2013-02-05 | 2015-04-28 | Dow Corning Corporation | Method to reduce dislocations in SiC crystal growth |
US9738991B2 (en) | 2013-02-05 | 2017-08-22 | Dow Corning Corporation | Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion |
US9797064B2 (en) | 2013-02-05 | 2017-10-24 | Dow Corning Corporation | Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion |
US9322110B2 (en) * | 2013-02-21 | 2016-04-26 | Ii-Vi Incorporated | Vanadium doped SiC single crystals and method thereof |
CN103696012B (zh) * | 2013-12-13 | 2016-03-30 | 山东大学 | 一种高均匀性、高产率半绝缘碳化硅衬底的制备方法 |
US9279192B2 (en) | 2014-07-29 | 2016-03-08 | Dow Corning Corporation | Method for manufacturing SiC wafer fit for integration with power device manufacturing technology |
DE102014217956B4 (de) | 2014-09-09 | 2018-05-09 | Sicrystal Ag | Herstellungsverfahren für einen Vanadium-dotierten SiC-Volumeneinkristall und Vanadium-dotiertes SiC-Substrat |
CN104213197B (zh) * | 2014-09-24 | 2017-06-16 | 中国电子科技集团公司第四十六研究所 | 一种用于pvt法制备半导体单晶材料的原位掺杂方法 |
US10753010B2 (en) * | 2014-09-25 | 2020-08-25 | Pallidus, Inc. | Vapor deposition apparatus and techniques using high puritiy polymer derived silicon carbide |
EP3353339A4 (de) | 2015-09-24 | 2019-05-08 | Melior Innovations Inc. | Dampfabscheidungsvorrichtung und verfahren mit hochreinem siliciumcarbid aus polymer |
JP6755524B2 (ja) | 2015-09-30 | 2020-09-16 | 国立研究開発法人産業技術総合研究所 | p型4H−SiC単結晶及びp型4H−SiC単結晶の製造方法 |
CN105274624B (zh) * | 2015-10-09 | 2017-09-29 | 张家港市东大工业技术研究院 | 一种利用微波辐照制备钒掺杂半绝缘碳化硅的方法 |
CN105568385A (zh) * | 2016-01-22 | 2016-05-11 | 山东大学 | 一种掺锗SiC体单晶材料的生长方法 |
US20170321345A1 (en) | 2016-05-06 | 2017-11-09 | Ii-Vi Incorporated | Large Diameter Silicon Carbide Single Crystals and Apparatus and Method of Manufacture Thereof |
CN106894090B (zh) * | 2017-03-17 | 2019-09-24 | 山东大学 | 一种高质量低电阻率的p型SiC单晶制备方法 |
EP3382068B1 (de) * | 2017-03-29 | 2022-05-18 | SiCrystal GmbH | Siliciumcarbidsubstrat und verfahren zur züchtung von sic-einkristall-ingots |
EP3382067B1 (de) * | 2017-03-29 | 2021-08-18 | SiCrystal GmbH | Siliciumcarbidsubstrat und verfahren zur züchtung von sic-einkristallkörpern |
US11522542B2 (en) * | 2019-06-03 | 2022-12-06 | Lawrence Livermore National Security, Llc | Wide bandgap optical switch circuit breaker |
TWI723650B (zh) * | 2019-11-26 | 2021-04-01 | 國家中山科學研究院 | 一種均勻碳化矽晶體製備裝置 |
JP2021091566A (ja) * | 2019-12-09 | 2021-06-17 | 昭和電工株式会社 | SiC基板及びSiC単結晶の製造方法 |
JP6952098B2 (ja) * | 2019-12-20 | 2021-10-20 | 國家中山科學研究院 | 均一な炭化ケイ素結晶の製造装置 |
US11072871B2 (en) | 2019-12-20 | 2021-07-27 | National Chung-Shan Institute Of Science And Technology | Preparation apparatus for silicon carbide crystals comprising a circular cylinder, a doping tablet, and a plate |
CN113249795A (zh) * | 2020-02-11 | 2021-08-13 | 稳晟材料科技股份有限公司 | 碳化硅长晶设备及其长晶方法 |
US12006591B2 (en) | 2020-03-02 | 2024-06-11 | Ii-Vi Advanced Materials, Llc | Method for preparing an aluminum doped silicon carbide crystal by providing a compound including aluminum and oxygen in a capsule comprised of a first and second material |
EP4206366A1 (de) * | 2020-08-28 | 2023-07-05 | Kyocera Corporation | Verfahren zur herstellung von sic-polykristall |
WO2023283471A1 (en) * | 2021-07-09 | 2023-01-12 | Pallidus, Inc. | Sic p-type, and low resistivity, crystals, boules, wafers and devices, and methods of making the same |
CN114790573B (zh) * | 2022-03-09 | 2024-06-11 | 山东大学 | 一种高掺杂均匀性p型SiC的生长方法 |
CN114686970B (zh) * | 2022-04-13 | 2024-01-09 | 合肥世纪金光半导体有限公司 | 一种掺杂剂及其制备方法以及晶型可控的半绝缘碳化硅晶体生长方法 |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
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NL279389A (de) | 1962-06-06 | |||
JPH01108200A (ja) | 1987-10-19 | 1989-04-25 | Sanyo Electric Co Ltd | SiCインゴツトの製造方法 |
US4866005A (en) * | 1987-10-26 | 1989-09-12 | North Carolina State University | Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide |
JPH04193799A (ja) * | 1990-11-27 | 1992-07-13 | Sharp Corp | 炭化珪素単結晶の製造方法 |
US5611955A (en) * | 1993-10-18 | 1997-03-18 | Northrop Grumman Corp. | High resistivity silicon carbide substrates for high power microwave devices |
US5683507A (en) * | 1995-09-05 | 1997-11-04 | Northrop Grumman Corporation | Apparatus for growing large silicon carbide single crystals |
US5746827A (en) * | 1995-12-27 | 1998-05-05 | Northrop Grumman Corporation | Method of producing large diameter silicon carbide crystals |
JP3215798B2 (ja) | 1996-06-26 | 2001-10-09 | 住友電気工業株式会社 | Ii−vi族化合物半導体結晶の成長方法 |
US5667587A (en) * | 1996-12-18 | 1997-09-16 | Northrop Gruman Corporation | Apparatus for growing silicon carbide crystals |
US6683783B1 (en) * | 1997-03-07 | 2004-01-27 | William Marsh Rice University | Carbon fibers formed from single-wall carbon nanotubes |
US5873937A (en) * | 1997-05-05 | 1999-02-23 | Northrop Grumman Corporation | Method of growing 4H silicon carbide crystal |
US5788768A (en) * | 1997-05-08 | 1998-08-04 | Northrop Grumman Corporation | Feedstock arrangement for silicon carbide boule growth |
US5985024A (en) * | 1997-12-11 | 1999-11-16 | Northrop Grumman Corporation | Method and apparatus for growing high purity single crystal silicon carbide |
EP0933450B1 (de) * | 1998-01-19 | 2002-04-17 | Sumitomo Electric Industries, Ltd. | Verfahren und Vorrichtung zur Herstellung eines SiC-Einkristalles |
US6056820A (en) * | 1998-07-10 | 2000-05-02 | Northrop Grumman Corporation | Advanced physical vapor transport method and apparatus for growing high purity single crystal silicon carbide |
DE19917601A1 (de) * | 1998-07-14 | 2000-01-20 | Siemens Ag | Vorrichtung und Verfahren zur Herstellung mindestens eines SiC-Einkristalls |
US6179914B1 (en) * | 1999-02-02 | 2001-01-30 | Seh America, Inc. | Dopant delivery system and method |
US6824611B1 (en) * | 1999-10-08 | 2004-11-30 | Cree, Inc. | Method and apparatus for growing silicon carbide crystals |
EP1268883A1 (de) * | 2000-03-13 | 2003-01-02 | II-VI Incorporated | Herstelleung von grossformatigen einkristallen durch zusammenwachsen von flächigen kristallisationskeimen |
CN1367275A (zh) * | 2001-01-20 | 2002-09-04 | 上海德波赛康科研有限公司 | 块状碳化硅单晶生长的制备方法 |
JP3876628B2 (ja) * | 2001-02-07 | 2007-02-07 | 株式会社デンソー | 炭化珪素単結晶の製造方法および炭化珪素単結晶 |
US6780243B1 (en) * | 2001-11-01 | 2004-08-24 | Dow Corning Enterprises, Inc. | Method of silicon carbide monocrystalline boule growth |
WO2006017074A2 (en) * | 2004-07-07 | 2006-02-16 | Ii-Vi Incorporated | Low-doped semi-insulating sic crystals and method |
US7608524B2 (en) * | 2005-04-19 | 2009-10-27 | Ii-Vi Incorporated | Method of and system for forming SiC crystals having spatially uniform doping impurities |
US7524376B2 (en) * | 2006-05-04 | 2009-04-28 | Fairfield Crystal Technology, Llc | Method and apparatus for aluminum nitride monocrystal boule growth |
US20090053125A1 (en) * | 2007-08-20 | 2009-02-26 | Il-Vi Incorporated | Stabilizing 4H Polytype During Sublimation Growth Of SiC Single Crystals |
US8163086B2 (en) * | 2007-08-29 | 2012-04-24 | Cree, Inc. | Halogen assisted physical vapor transport method for silicon carbide growth |
-
2006
- 2006-04-17 US US11/405,368 patent/US7608524B2/en active Active
- 2006-04-18 JP JP2008507787A patent/JP5033788B2/ja active Active
- 2006-04-18 EP EP06750491A patent/EP1874985B1/de active Active
- 2006-04-18 DE DE602006020427T patent/DE602006020427D1/de active Active
- 2006-04-18 AT AT06750491T patent/ATE500359T1/de not_active IP Right Cessation
- 2006-04-18 CN CN200680013157.1A patent/CN101163824B/zh active Active
- 2006-04-18 WO PCT/US2006/014463 patent/WO2006113657A1/en active Application Filing
-
2009
- 2009-10-05 US US12/573,288 patent/US8216369B2/en active Active
-
2011
- 2011-08-25 US US13/217,668 patent/US20110303884A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US8216369B2 (en) | 2012-07-10 |
US20110303884A1 (en) | 2011-12-15 |
EP1874985A1 (de) | 2008-01-09 |
EP1874985B1 (de) | 2011-03-02 |
DE602006020427D1 (de) | 2011-04-14 |
CN101163824A (zh) | 2008-04-16 |
US20100018455A1 (en) | 2010-01-28 |
CN101163824B (zh) | 2011-10-19 |
US7608524B2 (en) | 2009-10-27 |
JP2008538542A (ja) | 2008-10-30 |
JP5033788B2 (ja) | 2012-09-26 |
WO2006113657A1 (en) | 2006-10-26 |
US20060243984A1 (en) | 2006-11-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |