DE602006020427D1 - Verfahren und system zur bildung von sic-kristallen mit räumlich einheitlichen dotierungsverunreinigungen - Google Patents

Verfahren und system zur bildung von sic-kristallen mit räumlich einheitlichen dotierungsverunreinigungen

Info

Publication number
DE602006020427D1
DE602006020427D1 DE602006020427T DE602006020427T DE602006020427D1 DE 602006020427 D1 DE602006020427 D1 DE 602006020427D1 DE 602006020427 T DE602006020427 T DE 602006020427T DE 602006020427 T DE602006020427 T DE 602006020427T DE 602006020427 D1 DE602006020427 D1 DE 602006020427D1
Authority
DE
Germany
Prior art keywords
capsule
spatially uniform
uniform doping
sic crystals
forming sic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602006020427T
Other languages
English (en)
Inventor
Avinash K Gupta
Edward Semenas
Ilya Zwieback
Donovan L Barrett
Andrew E Souzis
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Coherent Corp
Original Assignee
II VI Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by II VI Inc filed Critical II VI Inc
Publication of DE602006020427D1 publication Critical patent/DE602006020427D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1016—Apparatus with means for treating single-crystal [e.g., heat treating]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/108—Including a solid member other than seed or product contacting the liquid [e.g., crucible, immersed heating element]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE602006020427T 2005-04-19 2006-04-18 Verfahren und system zur bildung von sic-kristallen mit räumlich einheitlichen dotierungsverunreinigungen Active DE602006020427D1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US67294505P 2005-04-19 2005-04-19
US11/405,368 US7608524B2 (en) 2005-04-19 2006-04-17 Method of and system for forming SiC crystals having spatially uniform doping impurities
PCT/US2006/014463 WO2006113657A1 (en) 2005-04-19 2006-04-18 Method of and system for forming sic crystals having spatially uniform doping impurities

Publications (1)

Publication Number Publication Date
DE602006020427D1 true DE602006020427D1 (de) 2011-04-14

Family

ID=36808698

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602006020427T Active DE602006020427D1 (de) 2005-04-19 2006-04-18 Verfahren und system zur bildung von sic-kristallen mit räumlich einheitlichen dotierungsverunreinigungen

Country Status (7)

Country Link
US (3) US7608524B2 (de)
EP (1) EP1874985B1 (de)
JP (1) JP5033788B2 (de)
CN (1) CN101163824B (de)
AT (1) ATE500359T1 (de)
DE (1) DE602006020427D1 (de)
WO (1) WO2006113657A1 (de)

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WO2009026269A1 (en) * 2007-08-20 2009-02-26 Ii-Vi Incorporated Stabilizing 4h polytype during sublimation growth of sic single crystals
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CN102245813B (zh) * 2008-12-08 2014-08-06 Ii-Vi有限公司 改进的轴向梯度传输(agt)生长工艺和利用电阻加热的装置
DE102008063129B4 (de) * 2008-12-24 2013-05-16 Sicrystal Ag Herstellungsverfahren für einen codotierten SiC-Volumeneinkristall und hochohmiges SiC-Substrat
DE102008063124B4 (de) 2008-12-24 2013-05-16 Sicrystal Ag Herstellungsverfahren für einen gleichmäßig dotierten SiC-Volumeneinkristall und gleichmäßig dotiertes SiC-Substrat
JP5779171B2 (ja) 2009-03-26 2015-09-16 トゥー‐シックス・インコーポレイテッド ＳｉＣ単結晶の昇華成長方法及び装置
US8377806B2 (en) * 2010-04-28 2013-02-19 Cree, Inc. Method for controlled growth of silicon carbide and structures produced by same
JP5659381B2 (ja) * 2010-07-29 2015-01-28 株式会社デンソー 炭化珪素単結晶の製造装置および製造方法
JP5839315B2 (ja) * 2010-07-30 2016-01-06 株式会社デンソー 炭化珪素単結晶およびその製造方法
CN104246023B (zh) 2012-04-20 2019-02-01 贰陆股份公司 大直径高品质的SiC单晶、方法和设备
JP6001768B2 (ja) 2012-05-24 2016-10-05 トゥー‐シックス・インコーポレイテッド ＮＵ型及びＰＩ型のバナジウム補償型ＳＩＳｉＣ単結晶及びその結晶成長方法
US8860040B2 (en) 2012-09-11 2014-10-14 Dow Corning Corporation High voltage power semiconductor devices on SiC
US9797064B2 (en) 2013-02-05 2017-10-24 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion
US9738991B2 (en) 2013-02-05 2017-08-22 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion
US9017804B2 (en) * 2013-02-05 2015-04-28 Dow Corning Corporation Method to reduce dislocations in SiC crystal growth
US9322110B2 (en) * 2013-02-21 2016-04-26 Ii-Vi Incorporated Vanadium doped SiC single crystals and method thereof
US9919972B2 (en) 2013-05-02 2018-03-20 Melior Innovations, Inc. Pressed and self sintered polymer derived SiC materials, applications and devices
CN103696012B (zh) * 2013-12-13 2016-03-30 山东大学 一种高均匀性、高产率半绝缘碳化硅衬底的制备方法
US9279192B2 (en) 2014-07-29 2016-03-08 Dow Corning Corporation Method for manufacturing SiC wafer fit for integration with power device manufacturing technology
DE102014217956B4 (de) 2014-09-09 2018-05-09 Sicrystal Ag Herstellungsverfahren für einen Vanadium-dotierten SiC-Volumeneinkristall und Vanadium-dotiertes SiC-Substrat
CN104213197B (zh) * 2014-09-24 2017-06-16 中国电子科技集团公司第四十六研究所 一种用于pvt法制备半导体单晶材料的原位掺杂方法
US10753010B2 (en) * 2014-09-25 2020-08-25 Pallidus, Inc. Vapor deposition apparatus and techniques using high puritiy polymer derived silicon carbide
EP3353339A4 (de) 2015-09-24 2019-05-08 Melior Innovations Inc. Dampfabscheidungsvorrichtung und verfahren mit hochreinem siliciumcarbid aus polymer
JP6755524B2 (ja) * 2015-09-30 2020-09-16 国立研究開発法人産業技術総合研究所 ｐ型４Ｈ−ＳｉＣ単結晶及びｐ型４Ｈ−ＳｉＣ単結晶の製造方法
CN105274624B (zh) * 2015-10-09 2017-09-29 张家港市东大工业技术研究院 一种利用微波辐照制备钒掺杂半绝缘碳化硅的方法
CN105568385A (zh) * 2016-01-22 2016-05-11 山东大学 一种掺锗SiC体单晶材料的生长方法
US20170321345A1 (en) 2016-05-06 2017-11-09 Ii-Vi Incorporated Large Diameter Silicon Carbide Single Crystals and Apparatus and Method of Manufacture Thereof
CN106894090B (zh) * 2017-03-17 2019-09-24 山东大学 一种高质量低电阻率的p型SiC单晶制备方法
EP3382068B1 (de) 2017-03-29 2022-05-18 SiCrystal GmbH Siliciumcarbidsubstrat und verfahren zur züchtung von sic-einkristall-ingots
EP3382067B1 (de) * 2017-03-29 2021-08-18 SiCrystal GmbH Siliciumcarbidsubstrat und verfahren zur züchtung von sic-einkristallkörpern
US11522542B2 (en) 2019-06-03 2022-12-06 Lawrence Livermore National Security, Llc Wide bandgap optical switch circuit breaker
TWI723650B (zh) * 2019-11-26 2021-04-01 國家中山科學研究院 一種均勻碳化矽晶體製備裝置
JP7528432B2 (ja) * 2019-12-09 2024-08-06 株式会社レゾナック ＳｉＣ基板及びＳｉＣ単結晶の製造方法
US11072871B2 (en) 2019-12-20 2021-07-27 National Chung-Shan Institute Of Science And Technology Preparation apparatus for silicon carbide crystals comprising a circular cylinder, a doping tablet, and a plate
TWI725797B (zh) * 2020-02-11 2021-04-21 穩晟材料科技股份有限公司 碳化矽長晶設備及其長晶方法
US12006591B2 (en) * 2020-03-02 2024-06-11 Ii-Vi Advanced Materials, Llc Method for preparing an aluminum doped silicon carbide crystal by providing a compound including aluminum and oxygen in a capsule comprised of a first and second material
WO2022045291A1 (ja) * 2020-08-28 2022-03-03 京セラ株式会社 ＳｉＣ多結晶体の製造方法
US20230167582A1 (en) * 2021-07-09 2023-06-01 Pallidus, Inc. SiC P-TYPE, AND LOW RESISTIVITY, CRYSTALS, BOULES, WAFERS AND DEVICES, AND METHODS OF MAKING THE SAME
CN114790573B (zh) * 2022-03-09 2024-06-11 山东大学 一种高掺杂均匀性p型SiC的生长方法
CN114686970B (zh) * 2022-04-13 2024-01-09 合肥世纪金光半导体有限公司 一种掺杂剂及其制备方法以及晶型可控的半绝缘碳化硅晶体生长方法

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Also Published As

Publication number Publication date
US20100018455A1 (en) 2010-01-28
ATE500359T1 (de) 2011-03-15
EP1874985B1 (de) 2011-03-02
WO2006113657A1 (en) 2006-10-26
CN101163824A (zh) 2008-04-16
US8216369B2 (en) 2012-07-10
EP1874985A1 (de) 2008-01-09
US20110303884A1 (en) 2011-12-15
US7608524B2 (en) 2009-10-27
JP5033788B2 (ja) 2012-09-26
CN101163824B (zh) 2011-10-19
US20060243984A1 (en) 2006-11-02
JP2008538542A (ja) 2008-10-30

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