ATE48002T1 - Hybride organoindium und organogalliumverbindungen und verfahren fuer metallorganische chemische abscheidung aus der dampfphase. - Google Patents
Hybride organoindium und organogalliumverbindungen und verfahren fuer metallorganische chemische abscheidung aus der dampfphase.Info
- Publication number
- ATE48002T1 ATE48002T1 AT85307400T AT85307400T ATE48002T1 AT E48002 T1 ATE48002 T1 AT E48002T1 AT 85307400 T AT85307400 T AT 85307400T AT 85307400 T AT85307400 T AT 85307400T AT E48002 T1 ATE48002 T1 AT E48002T1
- Authority
- AT
- Austria
- Prior art keywords
- hybrid
- compounds
- hydride
- metal organic
- vapour deposition
- Prior art date
Links
- 150000001875 compounds Chemical class 0.000 title abstract 5
- 238000000034 method Methods 0.000 title abstract 3
- 238000005229 chemical vapour deposition Methods 0.000 title 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 abstract 3
- 125000001424 substituent group Chemical group 0.000 abstract 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 abstract 2
- 125000000217 alkyl group Chemical group 0.000 abstract 2
- 229910052797 bismuth Inorganic materials 0.000 abstract 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 abstract 2
- 125000000058 cyclopentadienyl group Chemical group C1(=CC=CC1)* 0.000 abstract 2
- ZSWFCLXCOIISFI-UHFFFAOYSA-N endo-cyclopentadiene Chemical group C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 abstract 2
- 150000004678 hydrides Chemical class 0.000 abstract 2
- 230000000737 periodic effect Effects 0.000 abstract 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 abstract 2
- 229910052711 selenium Inorganic materials 0.000 abstract 2
- 239000011669 selenium Substances 0.000 abstract 2
- 229910052714 tellurium Inorganic materials 0.000 abstract 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 abstract 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 229910052790 beryllium Inorganic materials 0.000 abstract 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052799 carbon Inorganic materials 0.000 abstract 1
- 239000002131 composite material Substances 0.000 abstract 1
- -1 hydride compound Chemical class 0.000 abstract 1
- 229910052749 magnesium Inorganic materials 0.000 abstract 1
- 239000011777 magnesium Substances 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 150000002902 organometallic compounds Chemical class 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 229910052717 sulfur Inorganic materials 0.000 abstract 1
- 239000011593 sulfur Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C391/00—Compounds containing selenium
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C395/00—Compounds containing tellurium
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F3/00—Compounds containing elements of Groups 2 or 12 of the Periodic Table
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F3/00—Compounds containing elements of Groups 2 or 12 of the Periodic Table
- C07F3/02—Magnesium compounds
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F3/00—Compounds containing elements of Groups 2 or 12 of the Periodic Table
- C07F3/06—Zinc compounds
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F3/00—Compounds containing elements of Groups 2 or 12 of the Periodic Table
- C07F3/08—Cadmium compounds
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F3/00—Compounds containing elements of Groups 2 or 12 of the Periodic Table
- C07F3/10—Mercury compounds
- C07F3/12—Aromatic substances containing mercury
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
- C07F5/02—Boron compounds
- C07F5/027—Organoboranes and organoborohydrides
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
- C07F5/06—Aluminium compounds
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
- C07F9/02—Phosphorus compounds
- C07F9/28—Phosphorus compounds with one or more P—C bonds
- C07F9/50—Organo-phosphines
- C07F9/505—Preparation; Separation; Purification; Stabilisation
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
- C07F9/66—Arsenic compounds
- C07F9/70—Organo-arsenic compounds
- C07F9/72—Aliphatic compounds
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
- C07F9/90—Antimony compounds
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
- C07F9/94—Bismuth compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/305—Sulfides, selenides, or tellurides
- C23C16/306—AII BVI compounds, where A is Zn, Cd or Hg and B is S, Se or Te
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Molecular Biology (AREA)
- Chemical Vapour Deposition (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/664,645 US4720560A (en) | 1984-10-25 | 1984-10-25 | Hybrid organometallic compounds, particularly for metal organic chemical vapor deposition |
| EP85307400A EP0181706B1 (de) | 1984-10-25 | 1985-10-15 | Hybride Organoindium und Organogalliumverbindungen und Verfahren für metallorganische chemische Abscheidung aus der Dampfphase |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE48002T1 true ATE48002T1 (de) | 1989-12-15 |
Family
ID=24666848
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT85307400T ATE48002T1 (de) | 1984-10-25 | 1985-10-15 | Hybride organoindium und organogalliumverbindungen und verfahren fuer metallorganische chemische abscheidung aus der dampfphase. |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US4720560A (de) |
| EP (1) | EP0181706B1 (de) |
| JP (1) | JPS61104079A (de) |
| KR (1) | KR900001008B1 (de) |
| AT (1) | ATE48002T1 (de) |
| BR (1) | BR8505338A (de) |
| CA (1) | CA1251804A (de) |
| DE (1) | DE3574257D1 (de) |
| DK (1) | DK488785A (de) |
| IL (1) | IL76716A0 (de) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3514410A1 (de) * | 1985-04-20 | 1986-10-23 | Schering AG, Berlin und Bergkamen, 1000 Berlin | Neue alkalimetallaluminiumdialkyldihydride und deren loesungen in aromatischen kohlenwasserstoffen |
| JPH0627327B2 (ja) * | 1987-06-30 | 1994-04-13 | インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン | Ｉｂ族金属の付着方法 |
| EP0305144A3 (de) * | 1987-08-24 | 1989-03-08 | Canon Kabushiki Kaisha | Verfahren zur Herstellung einer Vebindungshalbleiterkristallschicht |
| DE3742525C2 (de) * | 1987-12-11 | 1998-02-19 | Hertz Inst Heinrich | Verfahren zur Herstellung von Metallalkylverbindungen und deren Verwendung |
| US4915988A (en) * | 1988-06-22 | 1990-04-10 | Georgia Tech Research Corporation | Chemical vapor deposition of group IIA metals and precursors therefor |
| US4992305A (en) * | 1988-06-22 | 1991-02-12 | Georgia Tech Research Corporation | Chemical vapor deposition of transistion metals |
| US4942252A (en) * | 1988-08-16 | 1990-07-17 | Cvd Incorporated | Synthesis of phosphorus and arsenic, halides and hydrides |
| NL8802458A (nl) * | 1988-10-07 | 1990-05-01 | Philips Nv | Werkwijze voor de vervaardiging van een epitaxiale indiumfosfide-laag op een substraatoppervlak. |
| US5147688A (en) * | 1990-04-24 | 1992-09-15 | Cvd, Inc. | MOCVD of indium oxide and indium/tin oxide films on substrates |
| DE4104076C2 (de) * | 1991-02-11 | 1994-03-31 | Bruker Analytische Messtechnik | Vorrichtung zur kernresonanzspektrometrischen Messung von chemischen und/oder physikalischen Reaktionsabläufen |
| US5300185A (en) * | 1991-03-29 | 1994-04-05 | Kabushiki Kaisha Toshiba | Method of manufacturing III-V group compound semiconductor |
| DE4214224A1 (de) * | 1992-04-30 | 1993-11-04 | Merck Patent Gmbh | Verwendung von elementorganischen verbindungen zur abscheidung des elementes auf substraten |
| US5380895A (en) * | 1993-02-10 | 1995-01-10 | Bandgap Technology Corporation | Method for the synthesis of metal alkyls and metal aryls |
| US5502227A (en) * | 1993-07-27 | 1996-03-26 | Cvd, Incorporated | Liquid indium source |
| JPH07153700A (ja) * | 1993-11-26 | 1995-06-16 | Sony Corp | 有機金属気相成長法及び発光素子作製方法 |
| US6211106B1 (en) * | 1998-06-18 | 2001-04-03 | Industrial Technology Research Institute | Groups IIA and IIIA based catalyst composition for preparing high-syndiotacticity polystyrene |
| JP2003252878A (ja) | 2002-01-17 | 2003-09-10 | Shipley Co Llc | 有機インジウム化合物 |
| DE102005037076B3 (de) * | 2005-08-03 | 2007-01-25 | Otto-Von-Guericke-Universität Magdeburg | Verfahren zur Herstellung von gemischt substituierte Organobismuthverbindungen und deren Verwendung |
| US20070141374A1 (en) * | 2005-12-19 | 2007-06-21 | General Electric Company | Environmentally resistant disk |
| WO2014078263A1 (en) * | 2012-11-14 | 2014-05-22 | Dow Global Technologies Llc | Methods of producing trimethylgallium |
| EP3036242B1 (de) * | 2013-08-22 | 2019-04-17 | Umicore AG & Co. KG | Verfahren zur herstellung von alkylindium-verbindungen und deren verwendung |
| EP3173507A1 (de) * | 2015-11-25 | 2017-05-31 | Umicore AG & Co. KG | Verfahren zur metallorganischen gasphasenabscheidung unter verwendung von lösungen von indiumalkylverbindungen in kohlenwasserstoffen |
| KR20230108319A (ko) | 2020-12-04 | 2023-07-18 | 가부시키가이샤 고준도가가쿠 겐큐쇼 | 인듐 및 1종 이상의 다른 금속을 함유하는 막을 제조하기 위한 증착용 원료 및 인듐 및 1종 이상의 다른 금속을 함유하는 막의 제조 방법 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2266776A (en) * | 1938-09-24 | 1941-12-23 | Atlantic Refining Co | Diesel fuel |
| US2818416A (en) * | 1952-12-10 | 1957-12-31 | Ethyl Corp | Cyclomatic compounds |
| US2880115A (en) * | 1955-07-13 | 1959-03-31 | Ohio Commw Eng Co | Method of gas plating light metals |
| US3097066A (en) * | 1956-02-25 | 1963-07-09 | Studiengesellschaft Kohle Mbh | Process for the production of boron and aluminium compounds containing hydrocarbon raicals and/or hydrogen |
| US2969382A (en) * | 1958-04-25 | 1961-01-24 | Ethyl Corp | Process for the manufacture of cyclopentadienyl group iii-a metal compounds |
| US3026356A (en) * | 1958-04-25 | 1962-03-20 | Herbert C Brown | Process for the preparation of organo boron compounds |
| US2987534A (en) * | 1958-04-25 | 1961-06-06 | Ethyl Corp | Group iii-a element compounds |
| US3247261A (en) * | 1958-12-24 | 1966-04-19 | Dal Mon Research Co | Organo-metallo compounds |
| US3161686A (en) * | 1960-03-30 | 1964-12-15 | Herbert C Brown | Novel organoboron compounds |
| JPS466817Y1 (de) * | 1967-06-30 | 1971-03-10 | ||
| US3755479A (en) * | 1967-10-24 | 1973-08-28 | Ethyl Corp | Beryllium hydride compositions and their use in making cyclopentadienyl beryllium hydride compounds |
| US3578494A (en) * | 1969-04-09 | 1971-05-11 | Continental Oil Co | Zinc plating by chemical reduction |
| US3755478A (en) * | 1971-08-18 | 1973-08-28 | Lithium Corp | Cyclic process for the preparation of diorganomagnesium compounds |
| JPS5312359B2 (de) * | 1972-06-14 | 1978-04-28 | ||
| JPS5422276B2 (de) * | 1973-03-19 | 1979-08-06 | ||
| DE2429600A1 (de) * | 1973-06-22 | 1975-01-16 | Gen Electric | In luft stabile, magnetische materialien und verfahren zu deren herstellung |
| DE3168017D1 (en) * | 1980-05-27 | 1985-02-14 | Secr Defence Brit | Manufacture of cadmium mercury telluride |
| JPS57145972A (en) * | 1980-11-18 | 1982-09-09 | British Telecomm | Formation of group iii-v compount |
| US4447369A (en) * | 1982-04-16 | 1984-05-08 | Ethyl Corporation | Organomagnesium compounds |
-
1984
- 1984-10-25 US US06/664,645 patent/US4720560A/en not_active Expired - Lifetime
-
1985
- 1985-10-15 AT AT85307400T patent/ATE48002T1/de not_active IP Right Cessation
- 1985-10-15 EP EP85307400A patent/EP0181706B1/de not_active Expired
- 1985-10-15 DE DE8585307400T patent/DE3574257D1/de not_active Expired
- 1985-10-15 IL IL76716A patent/IL76716A0/xx unknown
- 1985-10-21 CA CA000493480A patent/CA1251804A/en not_active Expired
- 1985-10-24 KR KR1019850007847A patent/KR900001008B1/ko not_active Expired
- 1985-10-24 DK DK488785A patent/DK488785A/da not_active Application Discontinuation
- 1985-10-25 JP JP60239257A patent/JPS61104079A/ja active Granted
- 1985-10-25 BR BR8505338A patent/BR8505338A/pt unknown
Also Published As
| Publication number | Publication date |
|---|---|
| US4720560A (en) | 1988-01-19 |
| DK488785D0 (da) | 1985-10-24 |
| DK488785A (da) | 1986-04-26 |
| EP0181706A1 (de) | 1986-05-21 |
| JPH0357188B2 (de) | 1991-08-30 |
| EP0181706B1 (de) | 1989-11-15 |
| KR860003266A (ko) | 1986-05-21 |
| CA1251804A (en) | 1989-03-28 |
| JPS61104079A (ja) | 1986-05-22 |
| BR8505338A (pt) | 1986-08-05 |
| DE3574257D1 (en) | 1989-12-21 |
| IL76716A0 (en) | 1986-02-28 |
| KR900001008B1 (ko) | 1990-02-24 |
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