KR860003266A - 금속 유기화학 증기 침전 공정 - Google Patents
금속 유기화학 증기 침전 공정 Download PDFInfo
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- KR860003266A KR860003266A KR1019850007847A KR850007847A KR860003266A KR 860003266 A KR860003266 A KR 860003266A KR 1019850007847 A KR1019850007847 A KR 1019850007847A KR 850007847 A KR850007847 A KR 850007847A KR 860003266 A KR860003266 A KR 860003266A
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- 238000000034 method Methods 0.000 title claims abstract 14
- 238000001556 precipitation Methods 0.000 title claims 4
- 229910052751 metal Inorganic materials 0.000 title claims 3
- 239000002184 metal Substances 0.000 title claims 3
- 239000000126 substance Substances 0.000 title claims 3
- 150000001875 compounds Chemical class 0.000 claims abstract 19
- 125000000217 alkyl group Chemical group 0.000 claims abstract 11
- 125000001424 substituent group Chemical group 0.000 claims abstract 9
- 125000000058 cyclopentadienyl group Chemical group C1(=CC=CC1)* 0.000 claims abstract 8
- ZSWFCLXCOIISFI-UHFFFAOYSA-N endo-cyclopentadiene Chemical group C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 claims abstract 8
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims abstract 8
- 150000004678 hydrides Chemical class 0.000 claims abstract 7
- 230000000737 periodic effect Effects 0.000 claims abstract 7
- 229910052714 tellurium Inorganic materials 0.000 claims abstract 7
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims abstract 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract 6
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims abstract 6
- 229910052797 bismuth Inorganic materials 0.000 claims abstract 6
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims abstract 6
- 229910052711 selenium Inorganic materials 0.000 claims abstract 6
- 239000011669 selenium Substances 0.000 claims abstract 6
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims abstract 4
- 229910052790 beryllium Inorganic materials 0.000 claims abstract 4
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims abstract 4
- 229910052749 magnesium Inorganic materials 0.000 claims abstract 4
- 239000011777 magnesium Substances 0.000 claims abstract 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract 3
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims abstract 3
- 229910052782 aluminium Inorganic materials 0.000 claims abstract 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract 3
- 229910052799 carbon Inorganic materials 0.000 claims abstract 3
- 239000002131 composite material Substances 0.000 claims abstract 3
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract 3
- 239000011593 sulfur Substances 0.000 claims abstract 3
- 229910052717 sulfur Inorganic materials 0.000 claims abstract 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract 2
- 229910052760 oxygen Inorganic materials 0.000 claims abstract 2
- 239000001301 oxygen Substances 0.000 claims abstract 2
- JMMJWXHSCXIWRF-UHFFFAOYSA-N ethyl(dimethyl)indigane Chemical compound CC[In](C)C JMMJWXHSCXIWRF-UHFFFAOYSA-N 0.000 claims description 3
- QMYLPCBJHHGADW-UHFFFAOYSA-N diethyl(methyl)indigane Chemical compound CC[In](C)CC QMYLPCBJHHGADW-UHFFFAOYSA-N 0.000 claims description 2
- 229930000044 secondary metabolite Natural products 0.000 claims 9
- 238000000354 decomposition reaction Methods 0.000 claims 3
- 238000002844 melting Methods 0.000 claims 2
- 230000008018 melting Effects 0.000 claims 2
- 238000002156 mixing Methods 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 229910052787 antimony Inorganic materials 0.000 claims 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical group [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims 1
- 229910052785 arsenic Inorganic materials 0.000 claims 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical group [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 1
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 150000002736 metal compounds Chemical class 0.000 claims 1
- 238000000746 purification Methods 0.000 claims 1
- OTRPZROOJRIMKW-UHFFFAOYSA-N triethylindigane Chemical compound CC[In](CC)CC OTRPZROOJRIMKW-UHFFFAOYSA-N 0.000 claims 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 claims 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 abstract 3
- 239000004411 aluminium Substances 0.000 abstract 1
- -1 hydride compound Chemical class 0.000 abstract 1
- 150000002902 organometallic compounds Chemical class 0.000 abstract 1
- 238000000862 absorption spectrum Methods 0.000 description 2
- 238000000655 nuclear magnetic resonance spectrum Methods 0.000 description 1
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Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 디메틸에틸인듐의 적외선 흡수 스펙트럼이며.
제2도는 디메틸에틸인듐의 양자핵자기공명 스펙트럼이며.
제3도는 디에틸메틸이듐의 적외선 흡수 스펙트럼이며.
Claims (11)
- A) 하기식으로 이루어진 서로다른 일차화합물 및 이차화합물을 선택하고,MRx상기식에서, x는 2-4의 정수이며, 각각의 R 치환체는 하이드라이드, 저급알킬, 페닐, 알킬치환페닐, 시클로펜타디에닐, 또는 알킬치환 시클로펜타디에닐에서 선택된것이며, 각각의 M 치환체는 탄소, 질소, 산소, 또는 황을 제외한 주기율표의 2B,2A,3A,5A,6A 그룹으로부터 선택된 원소이다. B) 공정에 의하여 최소한 서로다른 하나의 R 치환체를 지닌 일차화합물 및 이차화합물을 함유한 복합화합물을 제조하는데 이 복합화합물은 분해온도, 증기압, 융점등의 특성중 최소한 하나의 특성이 서로다른 일차 및 이차화합물이며, C) 상기 복합화합물의 융점 및 분해온도사이의 온도하에서 유지된 버블러를 함유하는 장치내에서 금속 유기화학중기침전을 위한 복합화합물을 사용하는데, 여기서 이 복합화합물은 특별침전공정에 유용한 증기압을 지니며, 침전실을 포함하는 상기 장치는 최소한 상기분해온도만큼 높은 온도하에서 유지되는 단계를 포함하는 것을 특징으로 하는 금속유화학중 기침전공정.
- 제1항에 있어서, 상기 복합화합물은 일차 및 이차 화합물을 혼합하여 생성물이 제조되는 것을 특징으로 하는 공정.
- 제2항에 있어서, 상기의 생성물은 단계(C)를 수행하기전에 일차 및 이차 화합물을 제거하기위해 정제되는 것을 특징으로 하는 공정.
- 제3항에 있어서, 상기의 정제단계는 상기 생성물을 증류시킴으로서 수행되는 것을 특징으로 하는 공정.
- 제1항에 있어서, 상기의 일차 화합물은 트리메틸인듐이며, 상기의 이차 화합물은 트리에틸인듐이며, 상기의 복합화합물은 디메틸에틸인듐 및 디에틸메틸인듐에서 선택된 것을 특징으로 하는 공정.
- 제1항에 있어서, M은 주기율표의 2B 그룹 또는 3A 그룹에서 선택된 비스무트, 안티몬, 비소, 인셀렌, 텔루륨, 마그네슘 또는 베릴륨인 것을 특징으로 하는 공정.
- A) 하기식에서, 이루어진 화합물을 제공하고 B) 이 화합물을 금속유 기화학 증기침전에 사용하는 단계를 포함하는 것을 특징으로 하는 금속유기화학증기침전공정.MRx상기식에서 x는 2-4의 정수이며, 각 R 치환체는 하이드라이드, 저급알킬, 페닐, 알킬치환페닐, 시클로펜타디에닐, 알킬치환 시클로펜타디에닐로서 R 치환체중 최소한 두개는 서로다르며, M은 주기율표의 2B 또는 3A 그룹에서 선택된 원소로서 비무스트, 셀렌, 텔루륨, 마그네슘, 베릴륨 이지만 R이 하이드라이드인 경우 알루미늄, 비스무트, 셀렌, 텔루륨은 제외된다.
- 제7항에 있어서, M은 주기율표의 2B 또는 3A 그룹에서 선택된 비스무트, 셀렌, 텔루륨, 마그네슘 베릴륨이지만 R이 하이드라이드인 경우 알루미늄, 비스무트, 셀렌, 텔루륨등이 제외되는 것을 특징으로 하는 공정.
- A) 하기식을 지닌 일차화합물 및 이차화합물을 선택하고 B) 일차화합물 및 이차화합물을 혼합하여 생성물을 형성하는 단계를 포함하는 것을 특징으로 하는 혼성유기금속 화합물의 합성공정.MRxx는 2-4의 정수이며, 각각의 R 치화체는 하이드라이드, 저급알킬, 페닐, 알킬, 치환페닐, 시클로펜타디에닐, 또는 알킬치환시클로펜타디에닐에서 선택된 것이며 M 치환체는 탄소, 질소, 수소 또는 황을 제외한 주기율표의 2B,2A,3A,4A,5A,6A 그룹에서 선택된 원소이다.
- 제9항에 있어서, 상기의 생성물을 분리하는 단계를 포함하는 것을 특징으로, 하는 공정.
- 제9항에 있어서, 상기의 일차 화합물 및 이차 화합물은 이론적 양으로 혼합되는 것을 특징으로 하는 공정.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/664,645 US4720560A (en) | 1984-10-25 | 1984-10-25 | Hybrid organometallic compounds, particularly for metal organic chemical vapor deposition |
| US664645 | 1984-10-25 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR860003266A true KR860003266A (ko) | 1986-05-21 |
| KR900001008B1 KR900001008B1 (ko) | 1990-02-24 |
Family
ID=24666848
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019850007847A KR900001008B1 (ko) | 1984-10-25 | 1985-10-24 | 금속 유기화학 증기 침전 공정 |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US4720560A (ko) |
| EP (1) | EP0181706B1 (ko) |
| JP (1) | JPS61104079A (ko) |
| KR (1) | KR900001008B1 (ko) |
| AT (1) | ATE48002T1 (ko) |
| BR (1) | BR8505338A (ko) |
| CA (1) | CA1251804A (ko) |
| DE (1) | DE3574257D1 (ko) |
| DK (1) | DK488785A (ko) |
| IL (1) | IL76716A0 (ko) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3514410A1 (de) * | 1985-04-20 | 1986-10-23 | Schering AG, Berlin und Bergkamen, 1000 Berlin | Neue alkalimetallaluminiumdialkyldihydride und deren loesungen in aromatischen kohlenwasserstoffen |
| JPH0627327B2 (ja) * | 1987-06-30 | 1994-04-13 | インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン | Ｉｂ族金属の付着方法 |
| EP0305144A3 (en) * | 1987-08-24 | 1989-03-08 | Canon Kabushiki Kaisha | Method of forming crystalline compound semiconductor film |
| DE3742525C2 (de) * | 1987-12-11 | 1998-02-19 | Hertz Inst Heinrich | Verfahren zur Herstellung von Metallalkylverbindungen und deren Verwendung |
| US4915988A (en) * | 1988-06-22 | 1990-04-10 | Georgia Tech Research Corporation | Chemical vapor deposition of group IIA metals and precursors therefor |
| US4992305A (en) * | 1988-06-22 | 1991-02-12 | Georgia Tech Research Corporation | Chemical vapor deposition of transistion metals |
| US4942252A (en) * | 1988-08-16 | 1990-07-17 | Cvd Incorporated | Synthesis of phosphorus and arsenic, halides and hydrides |
| NL8802458A (nl) * | 1988-10-07 | 1990-05-01 | Philips Nv | Werkwijze voor de vervaardiging van een epitaxiale indiumfosfide-laag op een substraatoppervlak. |
| US5147688A (en) * | 1990-04-24 | 1992-09-15 | Cvd, Inc. | MOCVD of indium oxide and indium/tin oxide films on substrates |
| DE4104076C2 (de) * | 1991-02-11 | 1994-03-31 | Bruker Analytische Messtechnik | Vorrichtung zur kernresonanzspektrometrischen Messung von chemischen und/oder physikalischen Reaktionsabläufen |
| US5300185A (en) * | 1991-03-29 | 1994-04-05 | Kabushiki Kaisha Toshiba | Method of manufacturing III-V group compound semiconductor |
| DE4214224A1 (de) * | 1992-04-30 | 1993-11-04 | Merck Patent Gmbh | Verwendung von elementorganischen verbindungen zur abscheidung des elementes auf substraten |
| US5380895A (en) * | 1993-02-10 | 1995-01-10 | Bandgap Technology Corporation | Method for the synthesis of metal alkyls and metal aryls |
| US5502227A (en) * | 1993-07-27 | 1996-03-26 | Cvd, Incorporated | Liquid indium source |
| JPH07153700A (ja) * | 1993-11-26 | 1995-06-16 | Sony Corp | 有機金属気相成長法及び発光素子作製方法 |
| US6211106B1 (en) * | 1998-06-18 | 2001-04-03 | Industrial Technology Research Institute | Groups IIA and IIIA based catalyst composition for preparing high-syndiotacticity polystyrene |
| EP1335415B1 (en) * | 2002-01-17 | 2005-08-03 | Shipley Co. L.L.C. | Organoindium compounds for use in chemical vapour deposition processes |
| DE102005037076B3 (de) * | 2005-08-03 | 2007-01-25 | Otto-Von-Guericke-Universität Magdeburg | Verfahren zur Herstellung von gemischt substituierte Organobismuthverbindungen und deren Verwendung |
| US20070141374A1 (en) * | 2005-12-19 | 2007-06-21 | General Electric Company | Environmentally resistant disk |
| WO2014078263A1 (en) * | 2012-11-14 | 2014-05-22 | Dow Global Technologies Llc | Methods of producing trimethylgallium |
| KR102317590B1 (ko) * | 2013-08-22 | 2021-10-27 | 우미코레 아게 운트 코 카게 | 알킬인듐 화합물의 제조 방법 및 이의 용도 |
| EP3173507A1 (de) * | 2015-11-25 | 2017-05-31 | Umicore AG & Co. KG | Verfahren zur metallorganischen gasphasenabscheidung unter verwendung von lösungen von indiumalkylverbindungen in kohlenwasserstoffen |
| US20240003004A1 (en) * | 2020-12-04 | 2024-01-04 | Kojundo Chemical Laboratory Co., Ltd. | Vapor deposition source material used in production of film containing indium and one or more of the other metals, and the method of producing film containing indium and one or more of the other metals |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2266776A (en) * | 1938-09-24 | 1941-12-23 | Atlantic Refining Co | Diesel fuel |
| US2818416A (en) * | 1952-12-10 | 1957-12-31 | Ethyl Corp | Cyclomatic compounds |
| US2880115A (en) * | 1955-07-13 | 1959-03-31 | Ohio Commw Eng Co | Method of gas plating light metals |
| US3097066A (en) * | 1956-02-25 | 1963-07-09 | Studiengesellschaft Kohle Mbh | Process for the production of boron and aluminium compounds containing hydrocarbon raicals and/or hydrogen |
| US2987534A (en) * | 1958-04-25 | 1961-06-06 | Ethyl Corp | Group iii-a element compounds |
| US2969382A (en) * | 1958-04-25 | 1961-01-24 | Ethyl Corp | Process for the manufacture of cyclopentadienyl group iii-a metal compounds |
| US3026356A (en) * | 1958-04-25 | 1962-03-20 | Herbert C Brown | Process for the preparation of organo boron compounds |
| US3247261A (en) * | 1958-12-24 | 1966-04-19 | Dal Mon Research Co | Organo-metallo compounds |
| US3161686A (en) * | 1960-03-30 | 1964-12-15 | Herbert C Brown | Novel organoboron compounds |
| JPS466817Y1 (ko) * | 1967-06-30 | 1971-03-10 | ||
| US3755479A (en) * | 1967-10-24 | 1973-08-28 | Ethyl Corp | Beryllium hydride compositions and their use in making cyclopentadienyl beryllium hydride compounds |
| US3578494A (en) * | 1969-04-09 | 1971-05-11 | Continental Oil Co | Zinc plating by chemical reduction |
| US3755478A (en) * | 1971-08-18 | 1973-08-28 | Lithium Corp | Cyclic process for the preparation of diorganomagnesium compounds |
| JPS5312359B2 (ko) * | 1972-06-14 | 1978-04-28 | ||
| JPS5422276B2 (ko) * | 1973-03-19 | 1979-08-06 | ||
| IT1015238B (it) * | 1973-06-22 | 1977-05-10 | Gen Electric | Materiali magnetici stabili all a ria e loro metodo di fabbricazione |
| DE3168017D1 (en) * | 1980-05-27 | 1985-02-14 | Secr Defence Brit | Manufacture of cadmium mercury telluride |
| JPS57145972A (en) * | 1980-11-18 | 1982-09-09 | British Telecomm | Formation of group iii-v compount |
| US4447369A (en) * | 1982-04-16 | 1984-05-08 | Ethyl Corporation | Organomagnesium compounds |
-
1984
- 1984-10-25 US US06/664,645 patent/US4720560A/en not_active Expired - Lifetime
-
1985
- 1985-10-15 DE DE8585307400T patent/DE3574257D1/de not_active Expired
- 1985-10-15 AT AT85307400T patent/ATE48002T1/de not_active IP Right Cessation
- 1985-10-15 EP EP85307400A patent/EP0181706B1/en not_active Expired
- 1985-10-15 IL IL76716A patent/IL76716A0/xx unknown
- 1985-10-21 CA CA000493480A patent/CA1251804A/en not_active Expired
- 1985-10-24 KR KR1019850007847A patent/KR900001008B1/ko not_active IP Right Cessation
- 1985-10-24 DK DK488785A patent/DK488785A/da not_active Application Discontinuation
- 1985-10-25 BR BR8505338A patent/BR8505338A/pt unknown
- 1985-10-25 JP JP60239257A patent/JPS61104079A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| ATE48002T1 (de) | 1989-12-15 |
| EP0181706A1 (en) | 1986-05-21 |
| JPS61104079A (ja) | 1986-05-22 |
| DK488785D0 (da) | 1985-10-24 |
| DE3574257D1 (en) | 1989-12-21 |
| KR900001008B1 (ko) | 1990-02-24 |
| EP0181706B1 (en) | 1989-11-15 |
| US4720560A (en) | 1988-01-19 |
| BR8505338A (pt) | 1986-08-05 |
| DK488785A (da) | 1986-04-26 |
| IL76716A0 (en) | 1986-02-28 |
| CA1251804A (en) | 1989-03-28 |
| JPH0357188B2 (ko) | 1991-08-30 |
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