ATE453214T1 - Licht emittierendes bauelement und seine herstellung - Google Patents

Licht emittierendes bauelement und seine herstellung

Info

Publication number
ATE453214T1
ATE453214T1 AT05292266T AT05292266T ATE453214T1 AT E453214 T1 ATE453214 T1 AT E453214T1 AT 05292266 T AT05292266 T AT 05292266T AT 05292266 T AT05292266 T AT 05292266T AT E453214 T1 ATE453214 T1 AT E453214T1
Authority
AT
Austria
Prior art keywords
present
light emitting
devices
occurrence rate
production
Prior art date
Application number
AT05292266T
Other languages
English (en)
Inventor
Hyun Jae Lee
Jun Seok Ha
Original Assignee
Lg Electronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lg Electronics Inc filed Critical Lg Electronics Inc
Application granted granted Critical
Publication of ATE453214T1 publication Critical patent/ATE453214T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Heating, Cooling, Or Curing Plastics Or The Like In General (AREA)
  • Semiconductor Lasers (AREA)
AT05292266T 2004-11-08 2005-10-26 Licht emittierendes bauelement und seine herstellung ATE453214T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020040090456A KR100667508B1 (ko) 2004-11-08 2004-11-08 발광 소자 및 그의 제조방법

Publications (1)

Publication Number Publication Date
ATE453214T1 true ATE453214T1 (de) 2010-01-15

Family

ID=35871084

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05292266T ATE453214T1 (de) 2004-11-08 2005-10-26 Licht emittierendes bauelement und seine herstellung

Country Status (7)

Country Link
US (1) US8053795B2 (de)
EP (1) EP1662587B1 (de)
JP (1) JP4565391B2 (de)
KR (1) KR100667508B1 (de)
CN (1) CN1790757A (de)
AT (1) ATE453214T1 (de)
DE (1) DE602005018433D1 (de)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100600371B1 (ko) * 2005-05-17 2006-07-18 엘지전자 주식회사 발광 소자의 제조 방법
DE602006008256D1 (de) * 2005-12-15 2009-09-17 Lg Electronics Inc LED mit vertikaler Struktur und deren Herstellungsverfahren
WO2007148866A1 (en) * 2006-06-23 2007-12-27 Lg Electronics Inc. Light emitting diode having vertical topology and method of making the same
JP4302720B2 (ja) * 2006-06-28 2009-07-29 株式会社沖データ 半導体装置、ｌｅｄヘッド及び画像形成装置
KR100851403B1 (ko) 2006-07-31 2008-08-08 삼성전자주식회사 발광 소자 및 발광 소자의 제조방법
KR101615255B1 (ko) * 2006-09-20 2016-05-11 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 전사가능한 반도체 구조들, 디바이스들 및 디바이스 컴포넌트들을 만들기 위한 릴리스 방안들
KR100867541B1 (ko) * 2006-11-14 2008-11-06 삼성전기주식회사 수직형 발광 소자의 제조 방법
US7781241B2 (en) 2006-11-30 2010-08-24 Toyoda Gosei Co., Ltd. Group III-V semiconductor device and method for producing the same
JP4910664B2 (ja) * 2006-11-30 2012-04-04 豊田合成株式会社 Ｉｉｉ−ｖ族半導体素子の製造方法
JP4290745B2 (ja) 2007-03-16 2009-07-08 豊田合成株式会社 Ｉｉｉ−ｖ族半導体素子の製造方法
KR100856230B1 (ko) * 2007-03-21 2008-09-03 삼성전기주식회사 발광장치, 발광장치의 제조방법 및 모놀리식 발광다이오드어레이
DE102007030129A1 (de) 2007-06-29 2009-01-02 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Mehrzahl optoelektronischer Bauelemente und optoelektronisches Bauelement
GB0721957D0 (en) 2007-11-08 2007-12-19 Photonstar Led Ltd Ultra high thermal performance packaging for optoelectronics devices
SG153673A1 (en) * 2007-12-10 2009-07-29 Tinggi Tech Private Ltd Fabrication of semiconductor devices
CN100505351C (zh) * 2007-12-24 2009-06-24 厦门市三安光电科技有限公司 一种应用合成分隔法激光剥离GaN基发光器件的制造方法
JP2009231595A (ja) 2008-03-24 2009-10-08 Oki Data Corp 半導体素子製造方法
KR100902150B1 (ko) * 2008-09-23 2009-06-10 (주)큐엠씨 발광소자의 제조를 위한 장치 및 방법
KR101064081B1 (ko) 2008-12-29 2011-09-08 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR100934636B1 (ko) * 2009-02-27 2009-12-31 한빔 주식회사 발광다이오드 소자의 제조방법 및 그의 제조 중간체
CN102054905A (zh) * 2009-10-29 2011-05-11 展晶科技(深圳)有限公司 具有导热层的发光二极管芯片
JP5349260B2 (ja) 2009-11-19 2013-11-20 株式会社東芝 半導体発光装置及びその製造方法
WO2011069242A1 (en) * 2009-12-09 2011-06-16 Cooledge Lighting Inc. Semiconductor dice transfer-enabling apparatus and method for manufacturing transfer-enabling apparatus
US20110151588A1 (en) * 2009-12-17 2011-06-23 Cooledge Lighting, Inc. Method and magnetic transfer stamp for transferring semiconductor dice using magnetic transfer printing techniques
US8334152B2 (en) 2009-12-18 2012-12-18 Cooledge Lighting, Inc. Method of manufacturing transferable elements incorporating radiation enabled lift off for allowing transfer from host substrate
KR101028277B1 (ko) * 2010-05-25 2011-04-11 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법, 발광 소자 패키지 및 라이트 유닛
CN102544251B (zh) * 2010-12-27 2014-05-07 同方光电科技有限公司 一种大功率垂直发光二极管的制造方法
DE102011104515A1 (de) * 2011-06-17 2012-12-20 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen einer Mehrzahl von optoelektronischen Halbleiterchips
TW201318223A (zh) * 2011-10-27 2013-05-01 Ritedia Corp 具有氮化鋁層之發光二極體、包含其之晶片在電路載板上封裝結構、及其製備方法
CN103117334B (zh) * 2011-11-17 2015-05-06 山东浪潮华光光电子股份有限公司 一种垂直结构GaN基发光二极管芯片及其制作方法
WO2013084155A1 (en) * 2011-12-08 2013-06-13 Koninklijke Philips Electronics N.V. Forming thick metal layers on a semiconductor light emitting device
KR101945791B1 (ko) 2012-03-14 2019-02-11 삼성전자주식회사 반도체 발광소자의 제조방법
DE102013105870A1 (de) * 2013-06-06 2014-12-24 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
US9337078B2 (en) 2013-09-11 2016-05-10 Globalfoundries Inc. Heat dissipation through device isolation
US20150279815A1 (en) * 2014-03-28 2015-10-01 Stats Chippac, Ltd. Semiconductor Device and Method of Forming Substrate Having Conductive Columns
CN106848006A (zh) * 2015-12-03 2017-06-13 映瑞光电科技(上海)有限公司 倒装led芯片及其制备方法
CN108417545B (zh) * 2018-05-14 2020-09-22 上海芯龙半导体技术股份有限公司 一种功率器件及其制备方法
KR20200026709A (ko) * 2019-08-21 2020-03-11 엘지전자 주식회사 반도체 발광소자를 이용한 디스플레이 장치 및 이의 제조방법
CN111679454B (zh) * 2020-06-19 2023-07-07 联合微电子中心有限责任公司 半导体器件的制备方法
CN112447863B (zh) * 2020-11-20 2022-06-14 横店集团东磁股份有限公司 一种太阳能电池及其制备方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3365787B2 (ja) * 1992-06-18 2003-01-14 シャープ株式会社 Ｌｅｄチップ実装部品
EP1017113B1 (de) * 1997-01-09 2012-08-22 Nichia Corporation Halbleiteranordnung aus einer nitridverbindung
US20010042866A1 (en) * 1999-02-05 2001-11-22 Carrie Carter Coman Inxalygazn optical emitters fabricated via substrate removal
DE10040448A1 (de) * 2000-08-18 2002-03-07 Osram Opto Semiconductors Gmbh Halbleiterchip und Verfahren zu dessen Herstellung
US6657237B2 (en) * 2000-12-18 2003-12-02 Samsung Electro-Mechanics Co., Ltd. GaN based group III-V nitride semiconductor light-emitting diode and method for fabricating the same
US6555405B2 (en) * 2001-03-22 2003-04-29 Uni Light Technology, Inc. Method for forming a semiconductor device having a metal substrate
US8294172B2 (en) * 2002-04-09 2012-10-23 Lg Electronics Inc. Method of fabricating vertical devices using a metal support film
US20030189215A1 (en) * 2002-04-09 2003-10-09 Jong-Lam Lee Method of fabricating vertical structure leds
KR101030068B1 (ko) * 2002-07-08 2011-04-19 니치아 카가쿠 고교 가부시키가이샤 질화물 반도체 소자의 제조방법 및 질화물 반도체 소자
EP2290715B1 (de) * 2002-08-01 2019-01-23 Nichia Corporation Lichtemittierendes Halbleiterbauelement, Verfahren zu seiner Herstellung und Lichtemissionsvorrichtung damit
TWI228323B (en) * 2002-09-06 2005-02-21 Sony Corp Semiconductor light emitting device and its manufacturing method, integrated semiconductor light emitting device and manufacturing method thereof, image display device and its manufacturing method, illumination device and manufacturing method thereof
DE10245631B4 (de) * 2002-09-30 2022-01-20 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterbauelement
JP4143732B2 (ja) * 2002-10-16 2008-09-03 スタンレー電気株式会社 車載用波長変換素子
US7244628B2 (en) * 2003-05-22 2007-07-17 Matsushita Electric Industrial Co., Ltd. Method for fabricating semiconductor devices
JP2005268642A (ja) * 2004-03-19 2005-09-29 Uni Light Technology Inc 金属ベースを有する発光ダイオードの形成方法

Also Published As

Publication number Publication date
DE602005018433D1 (de) 2010-02-04
EP1662587A3 (de) 2007-08-29
JP4565391B2 (ja) 2010-10-20
US20060097274A1 (en) 2006-05-11
US8053795B2 (en) 2011-11-08
EP1662587A2 (de) 2006-05-31
KR100667508B1 (ko) 2007-01-10
KR20060041383A (ko) 2006-05-12
JP2006135321A (ja) 2006-05-25
CN1790757A (zh) 2006-06-21
EP1662587B1 (de) 2009-12-23

Similar Documents

Publication Publication Date Title
ATE453214T1 (de) Licht emittierendes bauelement und seine herstellung
TW200605151A (en) Lift-off process for gan films formed on sic substrates and devices fabricated using the method
TWI275566B (en) A diamond substrate and the process method of the same
TW200618341A (en) Solid metal block semiconductor light emitting device mounting substrates and packages including cavities and heat sinks, and methods of packaging same
TW200608605A (en) Method for fabricating group Ⅲ nitride devices and devices fabricated using method
TW200610059A (en) Semiconductor device and method of fabricating an LTPS layer
TW200633331A (en) Semiconductor laser device and fabricating method thereof
TW200723566A (en) Light emitting diode package with metal reflective layer and method of manufacturing the same
JPWO2007136064A1 (ja) 半導体発光素子及びその製造方法
JP2006332303A5 (de)
WO2011079645A1 (en) Epitaxial wafer for light emitting diode, light emitting diode chip and methods for manufacturing the same
SG162675A1 (en) Manufacturing method of soi substrate and manufacturing method of semiconductor device
CN107408791A8 (zh) 一种密集光源光学系统
CN102194801A (zh) 正向发光的发光二极管封装结构及其形成方法
TW201703289A (zh) 包括量子點的經密封裝置及用於製作相同物的方法
JP2007067183A (ja) 化合物半導体発光素子を有するｌｅｄパッケージ
KR20130040496A (ko) 접합기판 및 이의 제조방법
JP2012212734A (ja) 半導体レーザ装置
EP1524705A3 (de) Verfahren zur Herstellung einer Beleuchtungsvorrichtung mit Leuchtdioden vom Flip-Chip Typ
CN106449901B (zh) 一种发光二极管的制作方法
EP2101361A3 (de) Lichtemittierendes Halbleiterbauelement und Herstellungsverfahren dafür und Epitaxialwafer
KR100765453B1 (ko) 발광 다이오드의 형성방법
JP2012178434A (ja) 半導体レーザ装置
JP2016099577A (ja) 発光モジュール、発光装置、光学モジュール及び発光モジュールの製造方法
WO2015003402A1 (zh) 承载散热板和远程荧光粉结构的led光源及其生产方法

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties