ATE359588T1 - Magnetische tunnelübergangseinrichtung, speicher und schreibe- und lese- verfahren unter verwendung einer solchen - Google Patents

Magnetische tunnelübergangseinrichtung, speicher und schreibe- und lese- verfahren unter verwendung einer solchen

Info

Publication number
ATE359588T1
ATE359588T1 AT02796844T AT02796844T ATE359588T1 AT E359588 T1 ATE359588 T1 AT E359588T1 AT 02796844 T AT02796844 T AT 02796844T AT 02796844 T AT02796844 T AT 02796844T AT E359588 T1 ATE359588 T1 AT E359588T1
Authority
AT
Austria
Prior art keywords
layer
magnetization
reading
memory
storage layer
Prior art date
Application number
AT02796844T
Other languages
English (en)
Inventor
Bernard Dieny
Olivier Redon
Original Assignee
Commissariat Energie Atomique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique filed Critical Commissariat Energie Atomique
Application granted granted Critical
Publication of ATE359588T1 publication Critical patent/ATE359588T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5607—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using magnetic storage elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3286—Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/329—Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • H01F10/3272—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Nanotechnology (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
  • Thin Magnetic Films (AREA)
AT02796844T 2001-11-16 2002-11-14 Magnetische tunnelübergangseinrichtung, speicher und schreibe- und lese- verfahren unter verwendung einer solchen ATE359588T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0114840A FR2832542B1 (fr) 2001-11-16 2001-11-16 Dispositif magnetique a jonction tunnel magnetique, memoire et procedes d'ecriture et de lecture utilisant ce dispositif

Publications (1)

Publication Number Publication Date
ATE359588T1 true ATE359588T1 (de) 2007-05-15

Family

ID=8869468

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02796844T ATE359588T1 (de) 2001-11-16 2002-11-14 Magnetische tunnelübergangseinrichtung, speicher und schreibe- und lese- verfahren unter verwendung einer solchen

Country Status (7)

Country Link
US (2) USRE42619E1 (de)
EP (2) EP1808862B1 (de)
JP (2) JP4777613B2 (de)
AT (1) ATE359588T1 (de)
DE (1) DE60219526T2 (de)
FR (1) FR2832542B1 (de)
WO (1) WO2003043017A2 (de)

Families Citing this family (206)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2832542B1 (fr) * 2001-11-16 2005-05-06 Commissariat Energie Atomique Dispositif magnetique a jonction tunnel magnetique, memoire et procedes d'ecriture et de lecture utilisant ce dispositif
US6735111B2 (en) * 2002-01-16 2004-05-11 Micron Technology, Inc. Magnetoresistive memory devices and assemblies
JP2006527497A (ja) * 2003-06-11 2006-11-30 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ 磁気層構造体を備えるデバイスを製造する方法
WO2005001490A2 (en) * 2003-06-23 2005-01-06 Nve Corporation Thermally operated switch control memory cell
US8755222B2 (en) 2003-08-19 2014-06-17 New York University Bipolar spin-transfer switching
US7911832B2 (en) 2003-08-19 2011-03-22 New York University High speed low power magnetic devices based on current induced spin-momentum transfer
KR100835275B1 (ko) * 2004-08-12 2008-06-05 삼성전자주식회사 스핀 주입 메카니즘을 사용하여 자기램 소자를 구동시키는방법들
JP2005109263A (ja) 2003-09-30 2005-04-21 Toshiba Corp 磁性体素子及磁気メモリ
US20060281258A1 (en) * 2004-10-06 2006-12-14 Bernard Dieny Magnetic tunnel junction device and writing/reading method for said device
FR2860910B1 (fr) 2003-10-10 2006-02-10 Commissariat Energie Atomique Dispositif a jonction tunnel magnetique et procede d'ecriture/lecture d'un tel dispositif
US7522446B2 (en) * 2003-10-31 2009-04-21 Samsung Electronics Co., Ltd. Heating MRAM cells to ease state switching
JP2005150482A (ja) * 2003-11-18 2005-06-09 Sony Corp 磁気抵抗効果素子及び磁気メモリ装置
US7602000B2 (en) * 2003-11-19 2009-10-13 International Business Machines Corporation Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element
US7110287B2 (en) * 2004-02-13 2006-09-19 Grandis, Inc. Method and system for providing heat assisted switching of a magnetic element utilizing spin transfer
FR2866750B1 (fr) * 2004-02-23 2006-04-21 Centre Nat Rech Scient Memoire magnetique a jonction tunnel magnetique et procede pour son ecriture
US6992359B2 (en) * 2004-02-26 2006-01-31 Grandis, Inc. Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization
FR2867300B1 (fr) 2004-03-05 2006-04-28 Commissariat Energie Atomique Memoire vive magnetoresistive a haute densite de courant
US7148531B2 (en) * 2004-04-29 2006-12-12 Nve Corporation Magnetoresistive memory SOI cell
US7102921B2 (en) * 2004-05-11 2006-09-05 Hewlett-Packard Development Company, L.P. Magnetic memory device
US7576956B2 (en) * 2004-07-26 2009-08-18 Grandis Inc. Magnetic tunnel junction having diffusion stop layer
KR100642638B1 (ko) * 2004-10-21 2006-11-10 삼성전자주식회사 낮은 임계 전류를 갖는 자기 램 소자의 구동 방법들
JP4575136B2 (ja) * 2004-12-20 2010-11-04 株式会社東芝 磁気記録素子、磁気記録装置、および情報の記録方法
JP4575181B2 (ja) * 2005-01-28 2010-11-04 株式会社東芝 スピン注入磁気ランダムアクセスメモリ
JP4528660B2 (ja) * 2005-03-31 2010-08-18 株式会社東芝 スピン注入ｆｅｔ
JP5301993B2 (ja) 2005-08-12 2013-09-25 モジュメタル エルエルシー 組成変調複合材料及びその形成方法
US7777261B2 (en) * 2005-09-20 2010-08-17 Grandis Inc. Magnetic device having stabilized free ferromagnetic layer
US7973349B2 (en) 2005-09-20 2011-07-05 Grandis Inc. Magnetic device having multilayered free ferromagnetic layer
US7859034B2 (en) * 2005-09-20 2010-12-28 Grandis Inc. Magnetic devices having oxide antiferromagnetic layer next to free ferromagnetic layer
FR2892231B1 (fr) 2005-10-14 2008-06-27 Commissariat Energie Atomique Dispositif magnetique a jonction tunnel magnetoresistive et memoire magnetique a acces aleatoire
JP4883982B2 (ja) * 2005-10-19 2012-02-22 ルネサスエレクトロニクス株式会社 不揮発性記憶装置
US7486545B2 (en) * 2005-11-01 2009-02-03 Magic Technologies, Inc. Thermally assisted integrated MRAM design and process for its manufacture
JP4779608B2 (ja) * 2005-11-30 2011-09-28 Ｔｄｋ株式会社 磁気メモリ
US7430135B2 (en) * 2005-12-23 2008-09-30 Grandis Inc. Current-switched spin-transfer magnetic devices with reduced spin-transfer switching current density
JP2007266498A (ja) * 2006-03-29 2007-10-11 Toshiba Corp 磁気記録素子及び磁気メモリ
US20070246787A1 (en) * 2006-03-29 2007-10-25 Lien-Chang Wang On-plug magnetic tunnel junction devices based on spin torque transfer switching
US7903452B2 (en) * 2006-06-23 2011-03-08 Qimonda Ag Magnetoresistive memory cell
US7851840B2 (en) * 2006-09-13 2010-12-14 Grandis Inc. Devices and circuits based on magnetic tunnel junctions utilizing a multilayer barrier
TWI449040B (zh) * 2006-10-06 2014-08-11 Crocus Technology Sa 用於提供內容可定址的磁阻式隨機存取記憶體單元之系統及方法
KR100834811B1 (ko) * 2006-11-28 2008-06-09 고려대학교 산학협력단 수직 자기 이방성을 가지는 코발트-철-실리콘-보론/플래티늄 다층박막
US20090218645A1 (en) * 2007-02-12 2009-09-03 Yadav Technology Inc. multi-state spin-torque transfer magnetic random access memory
US7573736B2 (en) * 2007-05-22 2009-08-11 Taiwan Semiconductor Manufacturing Company Spin torque transfer MRAM device
US7688616B2 (en) * 2007-06-18 2010-03-30 Taiwan Semicondcutor Manufacturing Company, Ltd. Device and method of programming a magnetic memory element
US7957179B2 (en) * 2007-06-27 2011-06-07 Grandis Inc. Magnetic shielding in magnetic multilayer structures
JP5152712B2 (ja) * 2007-07-17 2013-02-27 独立行政法人理化学研究所 磁化状態制御装置および磁気情報記録装置
US7982275B2 (en) 2007-08-22 2011-07-19 Grandis Inc. Magnetic element having low saturation magnetization
US8100228B2 (en) * 2007-10-12 2012-01-24 D B Industries, Inc. Portable anchorage assembly
US9812184B2 (en) 2007-10-31 2017-11-07 New York University Current induced spin-momentum transfer stack with dual insulating layers
FR2924851B1 (fr) * 2007-12-05 2009-11-20 Commissariat Energie Atomique Element magnetique a ecriture assistee thermiquement.
WO2009074411A1 (en) * 2007-12-13 2009-06-18 Crocus Technology Magnetic memory with a thermally assisted writing procedure
FR2925747B1 (fr) * 2007-12-21 2010-04-09 Commissariat Energie Atomique Memoire magnetique a ecriture assistee thermiquement
FR2929041B1 (fr) * 2008-03-18 2012-11-30 Crocus Technology Element magnetique a ecriture assistee thermiquement
US7936597B2 (en) * 2008-03-25 2011-05-03 Seagate Technology Llc Multilevel magnetic storage device
ATE538474T1 (de) 2008-04-07 2012-01-15 Crocus Technology Sa System und verfahren zum schreiben von daten auf magnetoresistive direktzugriffsspeicherzellen
US8659852B2 (en) 2008-04-21 2014-02-25 Seagate Technology Llc Write-once magentic junction memory array
FR2931011B1 (fr) 2008-05-06 2010-05-28 Commissariat Energie Atomique Element magnetique a ecriture assistee thermiquement
EP2124228B1 (de) 2008-05-20 2014-03-05 Crocus Technology Magnetischer Direktzugriffsspeicher mit einem elliptischen Tunnelübergang
US7855911B2 (en) 2008-05-23 2010-12-21 Seagate Technology Llc Reconfigurable magnetic logic device using spin torque
US7852663B2 (en) 2008-05-23 2010-12-14 Seagate Technology Llc Nonvolatile programmable logic gates and adders
US8031519B2 (en) 2008-06-18 2011-10-04 Crocus Technology S.A. Shared line magnetic random access memory cells
US7804709B2 (en) * 2008-07-18 2010-09-28 Seagate Technology Llc Diode assisted switching spin-transfer torque memory unit
US8223532B2 (en) 2008-08-07 2012-07-17 Seagate Technology Llc Magnetic field assisted STRAM cells
US8054677B2 (en) 2008-08-07 2011-11-08 Seagate Technology Llc Magnetic memory with strain-assisted exchange coupling switch
US7881098B2 (en) 2008-08-26 2011-02-01 Seagate Technology Llc Memory with separate read and write paths
US7894248B2 (en) 2008-09-12 2011-02-22 Grandis Inc. Programmable and redundant circuitry based on magnetic tunnel junction (MTJ)
US7746687B2 (en) 2008-09-30 2010-06-29 Seagate Technology, Llc Thermally assisted multi-bit MRAM
US8169810B2 (en) 2008-10-08 2012-05-01 Seagate Technology Llc Magnetic memory with asymmetric energy barrier
US8487390B2 (en) * 2008-10-08 2013-07-16 Seagate Technology Llc Memory cell with stress-induced anisotropy
US8089132B2 (en) * 2008-10-09 2012-01-03 Seagate Technology Llc Magnetic memory with phonon glass electron crystal material
US8039913B2 (en) 2008-10-09 2011-10-18 Seagate Technology Llc Magnetic stack with laminated layer
US8217478B2 (en) 2008-10-10 2012-07-10 Seagate Technology Llc Magnetic stack with oxide to reduce switching current
US20100091564A1 (en) * 2008-10-10 2010-04-15 Seagate Technology Llc Magnetic stack having reduced switching current
US8228703B2 (en) * 2008-11-04 2012-07-24 Crocus Technology Sa Ternary Content Addressable Magnetoresistive random access memory cell
US8045366B2 (en) 2008-11-05 2011-10-25 Seagate Technology Llc STRAM with composite free magnetic element
US8043732B2 (en) 2008-11-11 2011-10-25 Seagate Technology Llc Memory cell with radial barrier
US7826181B2 (en) 2008-11-12 2010-11-02 Seagate Technology Llc Magnetic memory with porous non-conductive current confinement layer
US8289756B2 (en) * 2008-11-25 2012-10-16 Seagate Technology Llc Non volatile memory including stabilizing structures
KR101532752B1 (ko) * 2009-01-21 2015-07-02 삼성전자주식회사 자기 메모리 소자
JP5432762B2 (ja) * 2009-02-19 2014-03-05 クロッカス・テクノロジー・ソシエテ・アノニム アクティブストラップ式磁気ランダムアクセスメモリの記憶素子
US8053255B2 (en) * 2009-03-03 2011-11-08 Seagate Technology Llc STRAM with compensation element and method of making the same
US7916528B2 (en) 2009-03-30 2011-03-29 Seagate Technology Llc Predictive thermal preconditioning and timing control for non-volatile memory cells
EP2249349B1 (de) 2009-05-08 2012-02-08 Crocus Technology Magnetischer Speicher mit wärmeunterstütztem Schreibverfahren und eingeschränktem Schreibfeld
ATE544153T1 (de) * 2009-05-08 2012-02-15 Crocus Technology Magnetischer speicher mit wärmeunterstütztem schreibverfahren und niedrigem schreibstrom
US8218349B2 (en) 2009-05-26 2012-07-10 Crocus Technology Sa Non-volatile logic devices using magnetic tunnel junctions
FR2946183B1 (fr) 2009-05-27 2011-12-23 Commissariat Energie Atomique Dispositif magnetique a polarisation de spin.
US8686520B2 (en) 2009-05-29 2014-04-01 International Business Machines Corporation Spin-torque magnetoresistive structures
EP3009532A1 (de) 2009-06-08 2016-04-20 Modumetal, Inc. Elektroplattierte nanolaminierte beschichtungen und verkleidungen für korrosionsschutz
US8750028B2 (en) 2009-07-03 2014-06-10 Fuji Electric Co., Ltd. Magnetic memory element and driving method for same
US7999338B2 (en) 2009-07-13 2011-08-16 Seagate Technology Llc Magnetic stack having reference layers with orthogonal magnetization orientation directions
EP2276034B1 (de) 2009-07-13 2016-04-27 Crocus Technology S.A. Selbstbezogene Magnetdirektzugriffsspeicherzelle
US8102703B2 (en) 2009-07-14 2012-01-24 Crocus Technology Magnetic element with a fast spin transfer torque writing procedure
US8445979B2 (en) * 2009-09-11 2013-05-21 Samsung Electronics Co., Ltd. Magnetic memory devices including magnetic layers separated by tunnel barriers
US8469832B2 (en) * 2009-11-03 2013-06-25 Wonderland Nurserygoods Company Limited Swing apparatus with detachable infant holding device
US8199553B2 (en) * 2009-12-17 2012-06-12 Hitachi Global Storage Technologies Netherlands B.V. Multilevel frequency addressable field driven MRAM
EP2405439B1 (de) 2010-07-07 2013-01-23 Crocus Technology S.A. Magnetische Vorrichtung mit optimierter Wärmeeingrenzung
FR2964248B1 (fr) 2010-09-01 2013-07-19 Commissariat Energie Atomique Dispositif magnetique et procede de lecture et d’ecriture dans un tel dispositif magnetique
EP2447949B1 (de) 2010-10-26 2016-11-30 Crocus Technology Mehrstufiges magnetisches Element
US8358149B2 (en) 2010-10-29 2013-01-22 Honeywell International Inc. Magnetic logic gate
US8427199B2 (en) 2010-10-29 2013-04-23 Honeywell International Inc. Magnetic logic gate
US8374020B2 (en) 2010-10-29 2013-02-12 Honeywell International Inc. Reduced switching-energy magnetic elements
US8358154B2 (en) 2010-10-29 2013-01-22 Honeywell International Inc. Magnetic logic gate
EP2466586B1 (de) 2010-12-16 2016-03-02 Crocus Technology Magnetische Multibit-Direktzugriffsspeicherzelle mit verbessertem Lesebereich
EP2479759A1 (de) 2011-01-19 2012-07-25 Crocus Technology S.A. Stromsparende Magnetdirektzugriffsspeicherzelle
KR101739952B1 (ko) 2011-02-25 2017-05-26 삼성전자주식회사 자기 메모리 장치
EP2523105B1 (de) 2011-05-10 2019-12-04 Crocus Technology S.A. Informationsverarbeitungsvorrichtung mit einem Festwertspeicher und Verfahren zum Patchen des Festwertspeichers
EP2528060B1 (de) 2011-05-23 2016-12-14 Crocus Technology S.A. Mehrbit-Zelle mit synthetischer Speicherschicht
FR2976396B1 (fr) * 2011-06-07 2013-07-12 Commissariat Energie Atomique Empilement magnetique et point memoire comportant un tel empilement
US8427197B2 (en) 2011-06-15 2013-04-23 Honeywell International Inc. Configurable reference circuit for logic gates
EP2546836A1 (de) * 2011-07-12 2013-01-16 Crocus Technology S.A. Magnetische Direktzugriffsspeicherzelle mit verbesserter Verteilung des Schaltfelds
EP2575135B1 (de) 2011-09-28 2015-08-05 Crocus Technology S.A. Magnetdirektzugriffsspeicherzelle (MRAM-Zelle) und Verfahren zum Lesen einer MRAM-Zelle mittels selbstbezogener Leseoperation
EP2615610B1 (de) * 2012-01-16 2016-11-02 Crocus Technology S.A. MRAM-Zelle und Verfahren zum Beschreiben einer MRAM-Zelle unter Verwendung einer wärmeunterstützten Schreiboperation mit reduziertem Feldstrom
US8570792B2 (en) * 2012-01-24 2013-10-29 Taiwan Semiconductor Manufacturing Co., Ltd. Magnetoresistive random access memory
US8884386B2 (en) 2012-02-02 2014-11-11 Taiwan Semiconductor Manufacturing Company, Ltd. MRAM device and fabrication method thereof
EP2672487B1 (de) * 2012-06-08 2015-08-05 Crocus Technology S.A. Verfahren zum Beschreiben einer Direktzugriffsspeicherzelle (MRAM) mit verbesserter Lebensdauer der MRAM-Zelle
US9082888B2 (en) 2012-10-17 2015-07-14 New York University Inverted orthogonal spin transfer layer stack
US9082950B2 (en) 2012-10-17 2015-07-14 New York University Increased magnetoresistance in an inverted orthogonal spin transfer layer stack
EP2725580B1 (de) 2012-10-25 2018-07-18 Crocus Technology S.A. MRAM Speicherzelle mit einem Wärmeunterstützten multi bits Schreibverfahren
EP2736045B1 (de) 2012-11-27 2016-09-21 Crocus Technology S.A. Magnetdirektzugriffsspeicherzelle (MRAM-Zelle) mit geringem Stromverbrauch
EP2760025B1 (de) * 2013-01-23 2019-01-02 Crocus Technology S.A. TAS-MRAM-Element mit niedriger Schreibtemperatur
BR112015022078B1 (pt) 2013-03-15 2022-05-17 Modumetal, Inc Aparelho e método para eletrodepositar um revestimento nanolaminado
CN105283587B (zh) 2013-03-15 2019-05-10 莫杜美拓有限公司 纳米叠层涂层
EP2971261A4 (de) * 2013-03-15 2017-05-31 Modumetal, Inc. Elektroplattierte zusammensetzungen und nanolaminierte legierungen für durch ein additivherstellungsverfahren hergestellte artikel
CN105189828B (zh) 2013-03-15 2018-05-15 莫杜美拓有限公司 具有高硬度的镍铬纳米层压涂层
US8982613B2 (en) 2013-06-17 2015-03-17 New York University Scalable orthogonal spin transfer magnetic random access memory devices with reduced write error rates
US20150129946A1 (en) * 2013-11-13 2015-05-14 International Business Machines Corporation Self reference thermally assisted mram with low moment ferromagnet storage layer
US9406870B2 (en) * 2014-04-09 2016-08-02 International Business Machines Corporation Multibit self-reference thermally assisted MRAM
US9330748B2 (en) 2014-05-09 2016-05-03 Tower Semiconductor Ltd. High-speed compare operation using magnetic tunnel junction elements including two different anti-ferromagnetic layers
US9331123B2 (en) * 2014-05-09 2016-05-03 Tower Semiconductor Ltd. Logic unit including magnetic tunnel junction elements having two different anti-ferromagnetic layers
US9263667B1 (en) 2014-07-25 2016-02-16 Spin Transfer Technologies, Inc. Method for manufacturing MTJ memory device
CA2961508C (en) 2014-09-18 2024-04-09 Modumetal, Inc. A method and apparatus for continuously applying nanolaminate metal coatings
CN106794673B (zh) 2014-09-18 2021-01-22 莫杜美拓有限公司 通过电沉积和添加制造工艺制备制品的方法
US9337412B2 (en) 2014-09-22 2016-05-10 Spin Transfer Technologies, Inc. Magnetic tunnel junction structure for MRAM device
US9564580B2 (en) * 2014-12-29 2017-02-07 International Business Machines Corporation Double synthetic antiferromagnet using rare earth metals and transition metals
US10468590B2 (en) 2015-04-21 2019-11-05 Spin Memory, Inc. High annealing temperature perpendicular magnetic anisotropy structure for magnetic random access memory
US9728712B2 (en) 2015-04-21 2017-08-08 Spin Transfer Technologies, Inc. Spin transfer torque structure for MRAM devices having a spin current injection capping layer
US9853206B2 (en) 2015-06-16 2017-12-26 Spin Transfer Technologies, Inc. Precessional spin current structure for MRAM
US9773974B2 (en) 2015-07-30 2017-09-26 Spin Transfer Technologies, Inc. Polishing stop layer(s) for processing arrays of semiconductor elements
US10163479B2 (en) 2015-08-14 2018-12-25 Spin Transfer Technologies, Inc. Method and apparatus for bipolar memory write-verify
US10573363B2 (en) 2015-12-02 2020-02-25 Samsung Electronics Co., Ltd. Method and apparatus for performing self-referenced read in a magnetoresistive random access memory
US9741926B1 (en) 2016-01-28 2017-08-22 Spin Transfer Technologies, Inc. Memory cell having magnetic tunnel junction and thermal stability enhancement layer
US10559624B2 (en) * 2017-02-21 2020-02-11 Avalanche Technology, Inc. Selector device having asymmetric conductance for memory applications
KR102306333B1 (ko) * 2016-05-31 2021-09-30 소니그룹주식회사 불휘발성 메모리 셀, 메모리 셀 유닛 및 정보 기입 방법 및, 전자 기기
WO2018049062A1 (en) 2016-09-08 2018-03-15 Modumetal, Inc. Processes for providing laminated coatings on workpieces, and articles made therefrom
US10437491B2 (en) 2016-09-27 2019-10-08 Spin Memory, Inc. Method of processing incomplete memory operations in a memory device during a power up sequence and a power down sequence using a dynamic redundancy register
US11151042B2 (en) 2016-09-27 2021-10-19 Integrated Silicon Solution, (Cayman) Inc. Error cache segmentation for power reduction
US10437723B2 (en) 2016-09-27 2019-10-08 Spin Memory, Inc. Method of flushing the contents of a dynamic redundancy register to a secure storage area during a power down in a memory device
US10818331B2 (en) 2016-09-27 2020-10-27 Spin Memory, Inc. Multi-chip module for MRAM devices with levels of dynamic redundancy registers
US10446210B2 (en) 2016-09-27 2019-10-15 Spin Memory, Inc. Memory instruction pipeline with a pre-read stage for a write operation for reducing power consumption in a memory device that uses dynamic redundancy registers
US11119910B2 (en) 2016-09-27 2021-09-14 Spin Memory, Inc. Heuristics for selecting subsegments for entry in and entry out operations in an error cache system with coarse and fine grain segments
US11119936B2 (en) 2016-09-27 2021-09-14 Spin Memory, Inc. Error cache system with coarse and fine segments for power optimization
US10366774B2 (en) 2016-09-27 2019-07-30 Spin Memory, Inc. Device with dynamic redundancy registers
US10991410B2 (en) 2016-09-27 2021-04-27 Spin Memory, Inc. Bi-polar write scheme
US10628316B2 (en) 2016-09-27 2020-04-21 Spin Memory, Inc. Memory device with a plurality of memory banks where each memory bank is associated with a corresponding memory instruction pipeline and a dynamic redundancy register
US10460781B2 (en) 2016-09-27 2019-10-29 Spin Memory, Inc. Memory device with a dual Y-multiplexer structure for performing two simultaneous operations on the same row of a memory bank
US10360964B2 (en) 2016-09-27 2019-07-23 Spin Memory, Inc. Method of writing contents in memory during a power up sequence using a dynamic redundancy register in a memory device
US10546625B2 (en) 2016-09-27 2020-01-28 Spin Memory, Inc. Method of optimizing write voltage based on error buffer occupancy
US10672976B2 (en) 2017-02-28 2020-06-02 Spin Memory, Inc. Precessional spin current structure with high in-plane magnetization for MRAM
US10665777B2 (en) 2017-02-28 2020-05-26 Spin Memory, Inc. Precessional spin current structure with non-magnetic insertion layer for MRAM
CA3057836A1 (en) 2017-03-24 2018-09-27 Modumetal, Inc. Lift plungers with electrodeposited coatings, and systems and methods for producing the same
WO2018195516A1 (en) 2017-04-21 2018-10-25 Modumetal, Inc. Tubular articles with electrodeposited coatings, and systems and methods for producing the same
US10032978B1 (en) 2017-06-27 2018-07-24 Spin Transfer Technologies, Inc. MRAM with reduced stray magnetic fields
US10481976B2 (en) 2017-10-24 2019-11-19 Spin Memory, Inc. Forcing bits as bad to widen the window between the distributions of acceptable high and low resistive bits thereby lowering the margin and increasing the speed of the sense amplifiers
US10489245B2 (en) 2017-10-24 2019-11-26 Spin Memory, Inc. Forcing stuck bits, waterfall bits, shunt bits and low TMR bits to short during testing and using on-the-fly bit failure detection and bit redundancy remapping techniques to correct them
US10529439B2 (en) 2017-10-24 2020-01-07 Spin Memory, Inc. On-the-fly bit failure detection and bit redundancy remapping techniques to correct for fixed bit defects
US10656994B2 (en) 2017-10-24 2020-05-19 Spin Memory, Inc. Over-voltage write operation of tunnel magnet-resistance (“TMR”) memory device and correcting failure bits therefrom by using on-the-fly bit failure detection and bit redundancy remapping techniques
US10679685B2 (en) 2017-12-27 2020-06-09 Spin Memory, Inc. Shared bit line array architecture for magnetoresistive memory
US10891997B2 (en) 2017-12-28 2021-01-12 Spin Memory, Inc. Memory array with horizontal source line and a virtual source line
US10811594B2 (en) 2017-12-28 2020-10-20 Spin Memory, Inc. Process for hard mask development for MRAM pillar formation using photolithography
US10424726B2 (en) 2017-12-28 2019-09-24 Spin Memory, Inc. Process for improving photoresist pillar adhesion during MRAM fabrication
US10395712B2 (en) 2017-12-28 2019-08-27 Spin Memory, Inc. Memory array with horizontal source line and sacrificial bitline per virtual source
US10270027B1 (en) 2017-12-29 2019-04-23 Spin Memory, Inc. Self-generating AC current assist in orthogonal STT-MRAM
US10199083B1 (en) 2017-12-29 2019-02-05 Spin Transfer Technologies, Inc. Three-terminal MRAM with ac write-assist for low read disturb
US10236048B1 (en) 2017-12-29 2019-03-19 Spin Memory, Inc. AC current write-assist in orthogonal STT-MRAM
US10886330B2 (en) 2017-12-29 2021-01-05 Spin Memory, Inc. Memory device having overlapping magnetic tunnel junctions in compliance with a reference pitch
US10784439B2 (en) 2017-12-29 2020-09-22 Spin Memory, Inc. Precessional spin current magnetic tunnel junction devices and methods of manufacture
US10840436B2 (en) 2017-12-29 2020-11-17 Spin Memory, Inc. Perpendicular magnetic anisotropy interface tunnel junction devices and methods of manufacture
US10546624B2 (en) 2017-12-29 2020-01-28 Spin Memory, Inc. Multi-port random access memory
US10236047B1 (en) 2017-12-29 2019-03-19 Spin Memory, Inc. Shared oscillator (STNO) for MRAM array write-assist in orthogonal STT-MRAM
US10360961B1 (en) 2017-12-29 2019-07-23 Spin Memory, Inc. AC current pre-charge write-assist in orthogonal STT-MRAM
US10367139B2 (en) 2017-12-29 2019-07-30 Spin Memory, Inc. Methods of manufacturing magnetic tunnel junction devices
US10840439B2 (en) 2017-12-29 2020-11-17 Spin Memory, Inc. Magnetic tunnel junction (MTJ) fabrication methods and systems
US10424723B2 (en) 2017-12-29 2019-09-24 Spin Memory, Inc. Magnetic tunnel junction devices including an optimization layer
US10236439B1 (en) 2017-12-30 2019-03-19 Spin Memory, Inc. Switching and stability control for perpendicular magnetic tunnel junction device
US10229724B1 (en) 2017-12-30 2019-03-12 Spin Memory, Inc. Microwave write-assist in series-interconnected orthogonal STT-MRAM devices
US10339993B1 (en) 2017-12-30 2019-07-02 Spin Memory, Inc. Perpendicular magnetic tunnel junction device with skyrmionic assist layers for free layer switching
US10319900B1 (en) 2017-12-30 2019-06-11 Spin Memory, Inc. Perpendicular magnetic tunnel junction device with precessional spin current layer having a modulated moment density
US10141499B1 (en) 2017-12-30 2018-11-27 Spin Transfer Technologies, Inc. Perpendicular magnetic tunnel junction device with offset precessional spin current layer
US10255962B1 (en) 2017-12-30 2019-04-09 Spin Memory, Inc. Microwave write-assist in orthogonal STT-MRAM
US10468588B2 (en) 2018-01-05 2019-11-05 Spin Memory, Inc. Perpendicular magnetic tunnel junction device with skyrmionic enhancement layers for the precessional spin current magnetic layer
US10438995B2 (en) 2018-01-08 2019-10-08 Spin Memory, Inc. Devices including magnetic tunnel junctions integrated with selectors
US10438996B2 (en) 2018-01-08 2019-10-08 Spin Memory, Inc. Methods of fabricating magnetic tunnel junctions integrated with selectors
US10446744B2 (en) 2018-03-08 2019-10-15 Spin Memory, Inc. Magnetic tunnel junction wafer adaptor used in magnetic annealing furnace and method of using the same
US10388861B1 (en) 2018-03-08 2019-08-20 Spin Memory, Inc. Magnetic tunnel junction wafer adaptor used in magnetic annealing furnace and method of using the same
US10529915B2 (en) 2018-03-23 2020-01-07 Spin Memory, Inc. Bit line structures for three-dimensional arrays with magnetic tunnel junction devices including an annular free magnetic layer and a planar reference magnetic layer
EP3784823A1 (de) 2018-04-27 2021-03-03 Modumetal, Inc. Vorrichtungen, systeme und verfahren zur herstellung einer vielzahl von gegenständen mit nanolaminierten beschichtungen mittels rotation
US10411185B1 (en) 2018-05-30 2019-09-10 Spin Memory, Inc. Process for creating a high density magnetic tunnel junction array test platform
US11081153B2 (en) 2018-06-29 2021-08-03 Taiwan Semiconductor Manufacturing Company, Ltd. Magnetic memory device with balancing synthetic anti-ferromagnetic layer
US10559338B2 (en) 2018-07-06 2020-02-11 Spin Memory, Inc. Multi-bit cell read-out techniques
US10692569B2 (en) 2018-07-06 2020-06-23 Spin Memory, Inc. Read-out techniques for multi-bit cells
US10593396B2 (en) 2018-07-06 2020-03-17 Spin Memory, Inc. Multi-bit cell read-out techniques for MRAM cells with mixed pinned magnetization orientations
US10600478B2 (en) 2018-07-06 2020-03-24 Spin Memory, Inc. Multi-bit cell read-out techniques for MRAM cells with mixed pinned magnetization orientations
US10699761B2 (en) 2018-09-18 2020-06-30 Spin Memory, Inc. Word line decoder memory architecture
US11621293B2 (en) 2018-10-01 2023-04-04 Integrated Silicon Solution, (Cayman) Inc. Multi terminal device stack systems and methods
US10971680B2 (en) 2018-10-01 2021-04-06 Spin Memory, Inc. Multi terminal device stack formation methods
US10580827B1 (en) 2018-11-16 2020-03-03 Spin Memory, Inc. Adjustable stabilizer/polarizer method for MRAM with enhanced stability and efficient switching
US11107979B2 (en) 2018-12-28 2021-08-31 Spin Memory, Inc. Patterned silicide structures and methods of manufacture
US10777248B1 (en) * 2019-06-24 2020-09-15 Western Digital Technologies, Inc. Heat assisted perpendicular spin transfer torque MRAM memory cell

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5640343A (en) 1996-03-18 1997-06-17 International Business Machines Corporation Magnetic memory array using magnetic tunnel junction devices in the memory cells
JP2000285668A (ja) * 1999-03-26 2000-10-13 Univ Nagoya 磁気メモリデバイス
US6535416B1 (en) * 1999-06-18 2003-03-18 Nve Corporation Magnetic memory coincident thermal pulse data storage
US6292389B1 (en) * 1999-07-19 2001-09-18 Motorola, Inc. Magnetic element with improved field response and fabricating method thereof
JP2001084758A (ja) * 1999-09-17 2001-03-30 Fujitsu Ltd 強磁性トンネル接合ランダムアクセスメモリ、スピンバルブランダムアクセスメモリ、単一強磁性膜ランダムアクセスメモリ、およびこれらをつかったメモリセルアレイ
US6272036B1 (en) * 1999-12-20 2001-08-07 The University Of Chicago Control of magnetic direction in multi-layer ferromagnetic devices by bias voltage
JP3910372B2 (ja) * 2000-03-03 2007-04-25 インターナショナル・ビジネス・マシーンズ・コーポレーション ストレージ・システム及び書き込み方法
US6385082B1 (en) * 2000-11-08 2002-05-07 International Business Machines Corp. Thermally-assisted magnetic random access memory (MRAM)
US6574079B2 (en) * 2000-11-09 2003-06-03 Tdk Corporation Magnetic tunnel junction device and method including a tunneling barrier layer formed by oxidations of metallic alloys
FR2817998B1 (fr) 2000-12-07 2003-01-10 Commissariat Energie Atomique Dispositif magnetique a polarisation de spin et a rotation d'aimantation, memoire et procede d'ecriture utilisant ce dispositif
FR2817999B1 (fr) 2000-12-07 2003-01-10 Commissariat Energie Atomique Dispositif magnetique a polarisation de spin et a empilement(s) tri-couche(s) et memoire utilisant ce dispositif
US6552928B1 (en) * 2001-02-23 2003-04-22 Read-Rite Corporation Read-write control circuit for magnetic tunnel junction MRAM
US6347049B1 (en) * 2001-07-25 2002-02-12 International Business Machines Corporation Low resistance magnetic tunnel junction device with bilayer or multilayer tunnel barrier
JP4798895B2 (ja) 2001-08-21 2011-10-19 キヤノン株式会社 強磁性体メモリとその熱補助駆動方法
FR2829867B1 (fr) * 2001-09-20 2003-12-19 Centre Nat Rech Scient Memoire magnetique a selection a l'ecriture par inhibition et procede pour son ecriture
US6649423B2 (en) * 2001-10-04 2003-11-18 Hewlett-Packard Development Company, L.P. Method for modifying switching field characteristics of magnetic tunnel junctions
US6473337B1 (en) * 2001-10-24 2002-10-29 Hewlett-Packard Company Memory device having memory cells with magnetic tunnel junction and tunnel junction in series
FR2832542B1 (fr) * 2001-11-16 2005-05-06 Commissariat Energie Atomique Dispositif magnetique a jonction tunnel magnetique, memoire et procedes d'ecriture et de lecture utilisant ce dispositif

Also Published As

Publication number Publication date
WO2003043017A2 (fr) 2003-05-22
EP1466329A2 (de) 2004-10-13
US20050002228A1 (en) 2005-01-06
EP1466329B1 (de) 2007-04-11
JP2005510047A (ja) 2005-04-14
WO2003043017A3 (fr) 2003-12-11
JP2011193018A (ja) 2011-09-29
EP1808862A1 (de) 2007-07-18
JP4777613B2 (ja) 2011-09-21
FR2832542B1 (fr) 2005-05-06
USRE42619E1 (en) 2011-08-16
DE60219526T2 (de) 2007-12-20
DE60219526D1 (de) 2007-05-24
US6950335B2 (en) 2005-09-27
FR2832542A1 (fr) 2003-05-23
EP1808862B1 (de) 2012-10-24

Similar Documents

Publication Publication Date Title
ATE359588T1 (de) Magnetische tunnelübergangseinrichtung, speicher und schreibe- und lese- verfahren unter verwendung einer solchen
US6687178B1 (en) Temperature dependent write current source for magnetic tunnel junction MRAM
JP4493490B2 (ja) 発熱体付きメモリ記憶デバイス
CN100517500C (zh) 包括热量产生层的磁随机存取存储器及相关方法
ATE544153T1 (de) Magnetischer speicher mit wärmeunterstütztem schreibverfahren und niedrigem schreibstrom
JP2547960B2 (ja) 磁気不揮発性ランダム・アクセス・メモリ
US6621731B2 (en) Magnetic memory device
WO2003094170A3 (en) Layout for thermally selected cross-point mram cell
DE69932872D1 (de) Magnetisches Dünnfilmelement, Speicherelement damit und Schreibe- und Leseverfahren mit einem solchen Speicherelement
ATE378682T1 (de) Magnetspeicher mit schreibsperrauswahl und schreibverfahren dafür
EP1571713A4 (de) Drehinjektions-vorrichtung, magnetische vorrichtung mit verwendung derselben, darin verwendeter magnetischer dünnfilm
EP1329895A3 (de) Hochdichte magnetische Direktzufriffspeicheranordnung und Verfahren zu deren Betrieb
JP2011023100A (ja) 自己参照磁気ランダムアクセスメモリセル
JP2005108341A5 (de)
DE60201625D1 (de) Halbleiterspeicheranordnung mit Magnetwiderstandselement und Herstellungsverfahren
EP1631966A4 (de) Transplantierte magnet-direktzugriffsspeichr-(mram-)bausteine auf thermisch empfindlichen substraten durch laser-transfer und herstellungsverfahren dafür
EP1376602A3 (de) Thermomagnetischer magnetischer RAM-Speicher mit Spontanhalleffekt und Datenschreibe- leseverfahren unter Verwendung eines solchen
US8750013B1 (en) Racetrack memory with low-power write
US20130292784A1 (en) Magnetic Memory Element with Multi-Domain Storage Layer
DE60227893D1 (de) Halbleiterspeicher mit reduzierter Schwankung von Schreibgeschwindigkeit
TW200520203A (en) Nano-contacted magnetic memory device
TW201115801A (en) Magnetic memory structure and operation method
ATE545133T1 (de) Magnetischer speicher mit wärmeunterstütztem schreibverfahren und eingeschränktem schreibfeld
Daughton et al. Design of Curie point written magnetoresistance random access memory cells
DE60214374D1 (de) Magnetoresistiver Speicher mit weichmagnetischen Referenzschichte

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties