ATE242792T1 - Feinteiliges poliermittel, verfahren zu seiner herstellung und verfahren zur herstellung von halbleiterbauelementen - Google Patents
Feinteiliges poliermittel, verfahren zu seiner herstellung und verfahren zur herstellung von halbleiterbauelementenInfo
- Publication number
- ATE242792T1 ATE242792T1 AT98103574T AT98103574T ATE242792T1 AT E242792 T1 ATE242792 T1 AT E242792T1 AT 98103574 T AT98103574 T AT 98103574T AT 98103574 T AT98103574 T AT 98103574T AT E242792 T1 ATE242792 T1 AT E242792T1
- Authority
- AT
- Austria
- Prior art keywords
- polishing agent
- producing
- silicon dioxide
- fine particle
- fine particles
- Prior art date
Links
- 239000010419 fine particle Substances 0.000 title abstract 4
- 238000005498 polishing Methods 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title 2
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 abstract 3
- 229940044927 ceric oxide Drugs 0.000 abstract 3
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 abstract 3
- 239000003795 chemical substances by application Substances 0.000 abstract 3
- 239000013078 crystal Substances 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 239000007788 liquid Substances 0.000 abstract 2
- 238000002156 mixing Methods 0.000 abstract 2
- 239000000203 mixture Substances 0.000 abstract 2
- 239000000843 powder Substances 0.000 abstract 2
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 abstract 2
- 239000002002 slurry Substances 0.000 abstract 2
- 239000006104 solid solution Substances 0.000 abstract 2
- 238000007669 thermal treatment Methods 0.000 abstract 2
- 238000001816 cooling Methods 0.000 abstract 1
- 238000001035 drying Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000011236 particulate material Substances 0.000 abstract 1
- 238000010298 pulverizing process Methods 0.000 abstract 1
- 238000003756 stirring Methods 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/113—Silicon oxides; Hydrates thereof
- C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F17/00—Compounds of rare earth metals
- C01F17/20—Compounds containing only rare earth metals as the metal element
- C01F17/206—Compounds containing only rare earth metals as the metal element oxide or hydroxide being the only anion
- C01F17/224—Oxides or hydroxides of lanthanides
- C01F17/235—Cerium oxides or hydroxides
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Composite Materials (AREA)
- Inorganic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Geology (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10875597A JP3359535B2 (ja) | 1997-04-25 | 1997-04-25 | 半導体装置の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE242792T1 true ATE242792T1 (de) | 2003-06-15 |
Family
ID=14492692
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT98103574T ATE242792T1 (de) | 1997-04-25 | 1998-03-02 | Feinteiliges poliermittel, verfahren zu seiner herstellung und verfahren zur herstellung von halbleiterbauelementen |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US5951724A (de) |
| EP (1) | EP0874036B1 (de) |
| JP (1) | JP3359535B2 (de) |
| KR (1) | KR100372980B1 (de) |
| AT (1) | ATE242792T1 (de) |
| DE (1) | DE69815430D1 (de) |
| TW (1) | TW494134B (de) |
Families Citing this family (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0998536B1 (de) * | 1997-07-25 | 2002-12-18 | Infineon Technologies AG | Poliermittel für halbleitersubstrate |
| US6143662A (en) | 1998-02-18 | 2000-11-07 | Rodel Holdings, Inc. | Chemical mechanical polishing composition and method of polishing a substrate |
| US6241586B1 (en) | 1998-10-06 | 2001-06-05 | Rodel Holdings Inc. | CMP polishing slurry dewatering and reconstitution |
| US6572449B2 (en) | 1998-10-06 | 2003-06-03 | Rodel Holdings, Inc. | Dewatered CMP polishing compositions and methods for using same |
| US6447693B1 (en) * | 1998-10-21 | 2002-09-10 | W. R. Grace & Co.-Conn. | Slurries of abrasive inorganic oxide particles and method for polishing copper containing surfaces |
| AU1219600A (en) * | 1998-10-21 | 2000-05-08 | W.R. Grace & Co.-Conn. | Slurries of abrasive inorganic oxide particles and method for adjusting the abrasiveness of the particles |
| JP3516157B2 (ja) * | 1998-12-14 | 2004-04-05 | 松下電器産業株式会社 | 化学的機械研磨用研磨液および研磨方法 |
| KR100475976B1 (ko) * | 1998-12-25 | 2005-03-15 | 히다치 가세고교 가부시끼가이샤 | Ｃｍｐ 연마제, ｃｍｐ 연마제용 첨가액 및 기판의 연마방법 |
| KR100574259B1 (ko) | 1999-03-31 | 2006-04-27 | 가부시끼가이샤 도꾸야마 | 연마제 및 연마 방법 |
| JP2000301441A (ja) * | 1999-04-19 | 2000-10-31 | Nippon Micro Coating Kk | 化学的機械的テクスチャ加工方法 |
| US6238450B1 (en) * | 1999-06-16 | 2001-05-29 | Saint-Gobain Industrial Ceramics, Inc. | Ceria powder |
| US6159077A (en) * | 1999-07-30 | 2000-12-12 | Corning Incorporated | Colloidal silica polishing abrasive |
| US6322425B1 (en) | 1999-07-30 | 2001-11-27 | Corning Incorporated | Colloidal polishing of fused silica |
| US6447375B2 (en) | 2000-04-19 | 2002-09-10 | Rodel Holdings Inc. | Polishing method using a reconstituted dry particulate polishing composition |
| CN1175401C (zh) * | 2000-04-28 | 2004-11-10 | 三井金属矿业株式会社 | 磁记录介质用玻璃基板的制造方法 |
| DE10054345A1 (de) | 2000-11-02 | 2002-05-08 | Degussa | Wäßrige Dispersion, Verfahren zu deren Herstellung und Verwendung |
| JP3945745B2 (ja) * | 2001-03-09 | 2007-07-18 | 三井金属鉱業株式会社 | セリウム系研摩材及び研摩材スラリー並びにセリウム系研摩材の製造方法 |
| US6811470B2 (en) | 2001-07-16 | 2004-11-02 | Applied Materials Inc. | Methods and compositions for chemical mechanical polishing shallow trench isolation substrates |
| WO2003016424A1 (en) * | 2001-08-20 | 2003-02-27 | Samsung Corning Co., Ltd. | Polishing slurry comprising silica-coated ceria |
| US6677239B2 (en) | 2001-08-24 | 2004-01-13 | Applied Materials Inc. | Methods and compositions for chemical mechanical polishing |
| US7199056B2 (en) * | 2002-02-08 | 2007-04-03 | Applied Materials, Inc. | Low cost and low dishing slurry for polysilicon CMP |
| US7063597B2 (en) | 2002-10-25 | 2006-06-20 | Applied Materials | Polishing processes for shallow trench isolation substrates |
| JP4574140B2 (ja) * | 2003-08-27 | 2010-11-04 | 株式会社フジミインコーポレーテッド | 研磨用組成物及びそれを用いる研磨方法 |
| US20060088976A1 (en) * | 2004-10-22 | 2006-04-27 | Applied Materials, Inc. | Methods and compositions for chemical mechanical polishing substrates |
| JP5012026B2 (ja) * | 2004-11-08 | 2012-08-29 | 旭硝子株式会社 | ＣｅＯ２微粒子の製造方法 |
| JP2007103514A (ja) * | 2005-09-30 | 2007-04-19 | Fujimi Inc | 研磨用組成物及び研磨方法 |
| KR100819769B1 (ko) * | 2006-12-29 | 2008-04-08 | 제일모직주식회사 | Ｃｍｐ 슬러리 조성물 및 이를 이용한 연마방법 |
| KR20100062998A (ko) * | 2007-09-07 | 2010-06-10 | 아사히 가라스 가부시키가이샤 | 산화물 결정 미립자의 제조 방법 |
| KR101216373B1 (ko) * | 2008-02-12 | 2012-12-28 | 생-고뱅 세라믹스 앤드 플라스틱스, 인코포레이티드 | 세리아 재료 및 그 형성 방법 |
| KR101057106B1 (ko) * | 2008-10-21 | 2011-08-16 | 대구텍 유한회사 | 절삭 공구 및 이의 표면 처리방법 |
| MY159778A (en) * | 2008-12-31 | 2017-01-31 | Memc Singapore Pte Ltd | Methods to recover and purify silicon paricles from saw kerf |
| JP5689324B2 (ja) * | 2011-01-13 | 2015-03-25 | 花王株式会社 | 非晶質ガラス基板用研磨液組成物 |
| JP2015143332A (ja) * | 2013-12-24 | 2015-08-06 | 旭硝子株式会社 | 研磨剤、研磨方法および半導体集積回路装置の製造方法 |
| JP6371193B2 (ja) * | 2014-10-22 | 2018-08-08 | 日揮触媒化成株式会社 | シリカ系複合粒子分散液の製造方法 |
| EP3584221B1 (de) * | 2017-02-14 | 2024-10-16 | M. Technique Co., Ltd. | Siliciumdotierte metalloxidteilchen und uv-absorbierende zusammensetzung mit siliciumdotierten metalloxidteilchen |
| JP7044510B2 (ja) * | 2017-10-10 | 2022-03-30 | 花王株式会社 | 酸化セリウム含有複合研磨材 |
| CN115386301B (zh) * | 2022-09-17 | 2023-10-13 | 长治市龙晨科技有限公司 | 一种氧化镓单晶片加工用cmp抛光液及其制备方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5264010A (en) * | 1992-04-27 | 1993-11-23 | Rodel, Inc. | Compositions and methods for polishing and planarizing surfaces |
| TW311905B (de) * | 1994-07-11 | 1997-08-01 | Nissan Chemical Ind Ltd | |
| JPH08148455A (ja) * | 1994-08-18 | 1996-06-07 | Sumitomo Metal Ind Ltd | 薄膜の表面平坦化方法 |
| JP2864451B2 (ja) * | 1994-11-07 | 1999-03-03 | 三井金属鉱業株式会社 | 研磨材及び研磨方法 |
| JPH0982667A (ja) * | 1995-09-20 | 1997-03-28 | Hitachi Ltd | 研磨剤および研磨平坦化方法 |
| JP3359479B2 (ja) * | 1995-11-07 | 2002-12-24 | 三井金属鉱業株式会社 | 研磨材、その製造方法及び研磨方法 |
| JP2746861B2 (ja) * | 1995-11-20 | 1998-05-06 | 三井金属鉱業株式会社 | 酸化セリウム超微粒子の製造方法 |
-
1997
- 1997-04-25 JP JP10875597A patent/JP3359535B2/ja not_active Expired - Fee Related
-
1998
- 1998-02-26 US US09/030,803 patent/US5951724A/en not_active Expired - Fee Related
- 1998-03-02 DE DE69815430T patent/DE69815430D1/de not_active Expired - Lifetime
- 1998-03-02 AT AT98103574T patent/ATE242792T1/de not_active IP Right Cessation
- 1998-03-02 EP EP98103574A patent/EP0874036B1/de not_active Expired - Lifetime
- 1998-03-16 TW TW087103799A patent/TW494134B/zh not_active IP Right Cessation
- 1998-03-25 KR KR10-1998-0010254A patent/KR100372980B1/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| JP3359535B2 (ja) | 2002-12-24 |
| DE69815430D1 (de) | 2003-07-17 |
| JPH10298537A (ja) | 1998-11-10 |
| EP0874036B1 (de) | 2003-06-11 |
| TW494134B (en) | 2002-07-11 |
| KR100372980B1 (ko) | 2003-05-09 |
| EP0874036A1 (de) | 1998-10-28 |
| KR19980080634A (ko) | 1998-11-25 |
| US5951724A (en) | 1999-09-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |