ATE229576T1 - Aufdampfungskammer und verfahren zur herstellung eines films mit einer niedrigen dielektrizitätskonstante - Google Patents

Aufdampfungskammer und verfahren zur herstellung eines films mit einer niedrigen dielektrizitätskonstante

Info

Publication number
ATE229576T1
ATE229576T1 AT97107815T AT97107815T ATE229576T1 AT E229576 T1 ATE229576 T1 AT E229576T1 AT 97107815 T AT97107815 T AT 97107815T AT 97107815 T AT97107815 T AT 97107815T AT E229576 T1 ATE229576 T1 AT E229576T1
Authority
AT
Austria
Prior art keywords
chamber
substrate
film
silane
injecting
Prior art date
Application number
AT97107815T
Other languages
English (en)
Inventor
Shijian Li
Yaxin Wang
Fred C Redeker
Tetsuya Ishikawa
Alan W Collins
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of ATE229576T1 publication Critical patent/ATE229576T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45512—Premixing before introduction in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45514—Mixing in close vicinity to the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45576—Coaxial inlets for each gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Inorganic Insulating Materials (AREA)
  • Insulating Bodies (AREA)
AT97107815T 1996-05-13 1997-05-13 Aufdampfungskammer und verfahren zur herstellung eines films mit einer niedrigen dielektrizitätskonstante ATE229576T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US64761996A 1996-05-13 1996-05-13

Publications (1)

Publication Number Publication Date
ATE229576T1 true ATE229576T1 (de) 2002-12-15

Family

ID=24597681

Family Applications (1)

Application Number Title Priority Date Filing Date
AT97107815T ATE229576T1 (de) 1996-05-13 1997-05-13 Aufdampfungskammer und verfahren zur herstellung eines films mit einer niedrigen dielektrizitätskonstante

Country Status (6)

Country Link
EP (1) EP0807694B1 (de)
JP (1) JP4087923B2 (de)
KR (1) KR100297420B1 (de)
AT (1) ATE229576T1 (de)
DE (1) DE69717711T2 (de)
TW (1) TW343356B (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6070551A (en) * 1996-05-13 2000-06-06 Applied Materials, Inc. Deposition chamber and method for depositing low dielectric constant films
TW416100B (en) * 1997-07-02 2000-12-21 Applied Materials Inc Control of oxygen to silane ratio in a seasoning process to improve particle performance in an HDP-CVD system
US6486081B1 (en) 1998-11-13 2002-11-26 Applied Materials, Inc. Gas distribution system for a CVD processing chamber
US6432259B1 (en) * 1999-12-14 2002-08-13 Applied Materials, Inc. Plasma reactor cooled ceiling with an array of thermally isolated plasma heated mini-gas distribution plates
KR100406173B1 (ko) * 2000-06-13 2003-11-19 주식회사 하이닉스반도체 촉매 분사 수단을 구비한 히터 블록
CN101351076B (zh) * 2008-09-16 2011-08-17 北京北方微电子基地设备工艺研究中心有限责任公司 等离子体处理设备
US9512520B2 (en) * 2011-04-25 2016-12-06 Applied Materials, Inc. Semiconductor substrate processing system
US9499905B2 (en) * 2011-07-22 2016-11-22 Applied Materials, Inc. Methods and apparatus for the deposition of materials on a substrate
US9284644B2 (en) * 2014-02-27 2016-03-15 Lam Research Corporation Apparatus and method for improving wafer uniformity

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54111771A (en) * 1978-02-22 1979-09-01 Toshiba Corp Gas phase reaction unit of semiconductor substrate
JPH02126632A (ja) * 1988-11-05 1990-05-15 Nippon Telegr & Teleph Corp <Ntt> 化合物半導体結晶層の気相成長方法及びそれに用いる反応管
JPH0521393A (ja) * 1991-07-11 1993-01-29 Sony Corp プラズマ処理装置
KR0131439B1 (ko) * 1992-11-24 1998-04-14 나카무라 타메아키 반도체장치 및 그 제조방법
JPH0729827A (ja) * 1993-07-13 1995-01-31 Kawasaki Steel Corp 半導体基板の製造方法および装置
JP2667364B2 (ja) * 1993-08-16 1997-10-27 キヤノン販売株式会社 成膜装置
JPH07161642A (ja) * 1993-12-03 1995-06-23 Kobe Steel Ltd プラズマ処理装置
JPH07254592A (ja) * 1994-03-16 1995-10-03 Fujitsu Ltd 半導体装置の製造方法
JP3243125B2 (ja) * 1994-06-27 2002-01-07 東京エレクトロン株式会社 処理装置

Also Published As

Publication number Publication date
DE69717711T2 (de) 2003-09-18
TW343356B (en) 1998-10-21
KR100297420B1 (ko) 2001-10-24
DE69717711D1 (de) 2003-01-23
JPH1064892A (ja) 1998-03-06
EP0807694A1 (de) 1997-11-19
EP0807694B1 (de) 2002-12-11
JP4087923B2 (ja) 2008-05-21
KR970077163A (ko) 1997-12-12

Similar Documents

Publication Publication Date Title
US5733610A (en) Atmospheric pressure plasma reaction method of forming a hydrophobic film
ATE229576T1 (de) Aufdampfungskammer und verfahren zur herstellung eines films mit einer niedrigen dielektrizitätskonstante
WO1999029439A8 (en) Photoresist coating process control with solvent vapor sensor
ATE7931T1 (de) Vorrichtung zur plasmachemischen beschichtung.
ATE96894T1 (de) Verfahren und vorrichtung zur verbrennung mit oxidierendem mehrfachstrahl.
JP2005533174A (ja) 支持体上へのコロナによる化学蒸着
JPH11514499A (ja) 半導体のイオン注入用ガス噴射システム
JPH02295116A (ja) 半導体製造装置
KR890004999A (ko) 광 도파관 파이버를 코팅하기 위한 방법 및 장치
FR2711556B1 (fr) Procédé de dépôt d&#39;une couche mince sur la surface d&#39;un substrat en matière plastique.
US5633664A (en) Method of influencing the contact angle of the nozzle surface of inkjet printheads
CA2582302A1 (en) Improved deposition rate plasma enhanced chemical vapor process
CA2204466A1 (en) Apparatus and method for exposing product to a controlled environment
ATE172945T1 (de) Verfahren und reaktor zur mikrobiologischen wasserbehandlung mit hohem sauerstoffbedarf
JPH01306569A (ja) 薄膜形成方法とその装置
JPH02200784A (ja) Ｃｖｄ電極
JPH06508661A (ja) 処理室
JPS6291496A (ja) 気相成長装置用反応管
JPS5518077A (en) Device for growing film under gas
ATE174637T1 (de) Verfahren und vorrichtung zur beschichtung eines substrats mittels kathodenzerstäubung
JPS56164523A (en) Vapor phase growth of semiconductor
JPH06122522A (ja) 石英ガラス合成用バーナ装置
JPH02111693A (ja) 半導体エピタキシャル成長装置のガスインジェクト構造
JPH02201920A (ja) 半導体基板用熱処理炉
JPS5523085A (en) Production of silicon film

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties