ATE217448T1 - Nichtflüchtige elektrisch veränderbare eintransistor-halbleiterspeicheranordnung mit rekristallisiertem schwebendem gate - Google Patents

Nichtflüchtige elektrisch veränderbare eintransistor-halbleiterspeicheranordnung mit rekristallisiertem schwebendem gate

Info

Publication number
ATE217448T1
ATE217448T1 AT91904033T AT91904033T ATE217448T1 AT E217448 T1 ATE217448 T1 AT E217448T1 AT 91904033 T AT91904033 T AT 91904033T AT 91904033 T AT91904033 T AT 91904033T AT E217448 T1 ATE217448 T1 AT E217448T1
Authority
AT
Austria
Prior art keywords
over
insulating layer
floating gate
wall portion
drain
Prior art date
Application number
AT91904033T
Other languages
English (en)
Inventor
Bing Yeh
Ching-Shi Jenq
Original Assignee
Silicon Storage Tech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US07/467,907 external-priority patent/US5029130A/en
Priority claimed from US07/468,003 external-priority patent/US5045488A/en
Priority claimed from US07/467,918 external-priority patent/US5067108A/en
Application filed by Silicon Storage Tech Inc filed Critical Silicon Storage Tech Inc
Application granted granted Critical
Publication of ATE217448T1 publication Critical patent/ATE217448T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/684—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection
    • H10D30/685—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection from the channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures

Landscapes

  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
AT91904033T 1990-01-22 1991-01-18 Nichtflüchtige elektrisch veränderbare eintransistor-halbleiterspeicheranordnung mit rekristallisiertem schwebendem gate ATE217448T1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US07/467,907 US5029130A (en) 1990-01-22 1990-01-22 Single transistor non-valatile electrically alterable semiconductor memory device
US07/468,003 US5045488A (en) 1990-01-22 1990-01-22 Method of manufacturing a single transistor non-volatile, electrically alterable semiconductor memory device
US07/467,918 US5067108A (en) 1990-01-22 1990-01-22 Single transistor non-volatile electrically alterable semiconductor memory device with a re-crystallized floating gate
PCT/US1991/000433 WO1991011026A1 (en) 1990-01-22 1991-01-18 Single transistor non-volatile electrically alterable semiconductor memory device with a re-crystallized floating gate

Publications (1)

Publication Number Publication Date
ATE217448T1 true ATE217448T1 (de) 2002-05-15

Family

ID=27413033

Family Applications (1)

Application Number Title Priority Date Filing Date
AT91904033T ATE217448T1 (de) 1990-01-22 1991-01-18 Nichtflüchtige elektrisch veränderbare eintransistor-halbleiterspeicheranordnung mit rekristallisiertem schwebendem gate

Country Status (5)

Country Link
EP (1) EP0464196B1 (de)
AT (1) ATE217448T1 (de)
CA (1) CA2051686C (de)
DE (1) DE69133003T2 (de)
WO (1) WO1991011026A1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69226176T2 (de) * 1991-04-09 1999-12-23 Silicon Storage Technology, Inc. Elektrisch aenderbare einzel-transistor-halbleiterfestwertspeicheranordnung
US9293204B2 (en) * 2013-04-16 2016-03-22 Silicon Storage Technology, Inc. Non-volatile memory cell with self aligned floating and erase gates, and method of making same
EP2860767A1 (de) 2013-10-10 2015-04-15 ams AG CMOS-kompatible UV-Sensorvorrichtung und Verfahren zur Herstellung einer CMOS-kompatiblen UV-Sensorvorrichtung

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA119299A (en) * 1909-05-05 1909-07-06 George Stockham Emerick Air separator
US4122544A (en) * 1976-12-27 1978-10-24 Texas Instruments Incorporated Electrically alterable floating gate semiconductor memory device with series enhancement transistor
JPS5841659B2 (ja) * 1977-08-30 1983-09-13 株式会社東芝 絶縁膜の形成方法
JPS5519851A (en) * 1978-07-31 1980-02-12 Hitachi Ltd Manufacture of non-volatile memories
US4332077A (en) * 1979-08-10 1982-06-01 Rca Corporation Method of making electrically programmable control gate injected floating gate solid state memory transistor
JPS56120166A (en) * 1980-02-27 1981-09-21 Hitachi Ltd Semiconductor ic device and manufacture thereof
IT1209227B (it) * 1980-06-04 1989-07-16 Sgs Microelettronica Spa Cella di memoria non volatile a 'gate' flottante elettricamente alterabile.
US4366555A (en) * 1980-08-01 1982-12-28 National Semiconductor Corporation Electrically erasable programmable read only memory
JPS57112078A (en) * 1980-12-29 1982-07-12 Fujitsu Ltd Manufacture of electrically rewritable fixed memory
JPS6059750B2 (ja) * 1980-12-29 1985-12-26 富士通株式会社 不揮発性半導体記憶装置
DE3205858A1 (de) * 1982-02-18 1983-08-25 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von dynamischen halbleiter-speicherzellen mit wahlfreiem zugriff (ram) nach der doppel-polysilizium-gate-technologie
JPS58209164A (ja) * 1982-05-31 1983-12-06 Toshiba Corp 不揮発性半導体メモリ装置の製造方法
US4458407A (en) * 1983-04-01 1984-07-10 International Business Machines Corporation Process for fabricating semi-conductive oxide between two poly silicon gate electrodes
US4822750A (en) * 1983-08-29 1989-04-18 Seeq Technology, Inc. MOS floating gate memory cell containing tunneling diffusion region in contact with drain and extending under edges of field oxide
JPS59130475A (ja) * 1983-11-28 1984-07-27 Hitachi Ltd 半導体メモリ回路装置の製造方法
US4561907A (en) * 1984-07-12 1985-12-31 Bruha Raicu Process for forming low sheet resistance polysilicon having anisotropic etch characteristics
IT1213218B (it) * 1984-09-25 1989-12-14 Ates Componenti Elettron Processo per la fabbricazione di una cella di memoria non volatile con area di ossido sottile di dimensioni molto piccole, e cella ottenuta con il processo suddetto.
US4698787A (en) * 1984-11-21 1987-10-06 Exel Microelectronics, Inc. Single transistor electrically programmable memory device and method
US4656729A (en) * 1985-03-25 1987-04-14 International Business Machines Corp. Dual electron injection structure and process with self-limiting oxidation barrier
US4814291A (en) * 1986-02-25 1989-03-21 American Telephone And Telegraph Company, At&T Bell Laboratories Method of making devices having thin dielectric layers
JPS6336575A (ja) * 1986-07-30 1988-02-17 Toshiba Corp 半導体装置の製造方法
US4814286A (en) * 1987-02-02 1989-03-21 Intel Corporation EEPROM cell with integral select transistor
GB2200795B (en) * 1987-02-02 1990-10-03 Intel Corp Eprom cell with integral select transistor
US4853895A (en) * 1987-11-30 1989-08-01 Texas Instruments Incorporated EEPROM including programming electrode extending through the control gate electrode
US4964143A (en) * 1988-03-02 1990-10-16 Advanced Micro Devices, Inc. EPROM element employing self-aligning process
US4882649A (en) * 1988-03-29 1989-11-21 Texas Instruments Incorporated Nitride/oxide/nitride capacitor dielectric
US4912676A (en) * 1988-08-09 1990-03-27 Texas Instruments, Incorporated Erasable programmable memory

Also Published As

Publication number Publication date
EP0464196A4 (en) 1993-08-18
WO1991011026A1 (en) 1991-07-25
CA2051686C (en) 2001-10-23
CA2051686A1 (en) 1991-07-23
DE69133003T2 (de) 2002-12-12
EP0464196A1 (de) 1992-01-08
DE69133003D1 (de) 2002-06-13
EP0464196B1 (de) 2002-05-08

Similar Documents

Publication Publication Date Title
TW329521B (en) Split-gate type transistor, its manufacturing method and non-volatile semiconductor memory.
DE60142825D1 (de) Nichtflüchtige halbleiterspeicheranordnung
KR950030375A (ko) 플로팅 게이트로부터의 캐리어의 주입 및 추출을 위한 프로그래밍 영역을 가진 불 휘발성 반도체 메모리
KR980006410A (ko) 비휘발성 메모리 셀 및 그 메모리 셀을 액세스하는 방법
ATE168215T1 (de) Elektrisch aenderbare einzel-transistor- halbleiterfestwertspeicheranordnung
TW343391B (en) Nonvolatile semiconductor memory and methods for manufacturing and using the same
GB1525681A (en) Memory device
KR910013558A (ko) 불휘발성 반도체기억장치 및 그 제조방법
KR930009074A (ko) 전기적으로 삭제 가능하고 프로그램 가능한 판독 전용 메모리셀 제조방법 및 그의 레이아웃
TW360980B (en) Single transistor EEPROM memory device
DE69814363D1 (de) Skalierbare flash eeprom speicherzelle sowie ihr herstellungsverfahren und ihre anwendung
ATE449424T1 (de) Elektrisch löschbare und programmiebare nichtflüchtige halbleiterspeicheranordnung mit einschichtigem gatematerial und entsprechende speicherfläche
KR940001426A (ko) 폴리 터널 스페이서를 갖는 완전 특징 고밀도 "전기적으로 소거 가능하고 프로그램 가능한 판독 전용 메모리(eeprom)" 셀을 제조하는 방법
EP0025311A3 (de) Nicht-flüchtige Halbleiterspeichervorrichtung
EP0219241A3 (de) Nichtflüchtiger Halbleiterspeicher
CA2009068A1 (en) Trench jfet integrated circuit elements
SE7907193L (sv) Bestendigt minne
ATE217448T1 (de) Nichtflüchtige elektrisch veränderbare eintransistor-halbleiterspeicheranordnung mit rekristallisiertem schwebendem gate
TW332344B (en) Semiconductor device with a programmable semiconductor element
JPS5636166A (en) Nonvolatile semiconductor memory
EP0369676A3 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE59601782D1 (de) Elektrisch lösch- und programmierbare nicht-flüchtige speicherzelle
EP0335632A3 (de) Hochstrom-Dünnfilmtransistor
KR900007118A (ko) 불휘발성 반도체기억장치 및 그 제조방법
KR970018622A (ko) 불 휘발성 메모리장치 및 그 제조방법

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties