ATE199049T1 - Verfahren zur erzeugung von silizium-dioxid- passivierung hoher qualität auf silizium-carbid - Google Patents

Verfahren zur erzeugung von silizium-dioxid- passivierung hoher qualität auf silizium-carbid

Info

Publication number
ATE199049T1
ATE199049T1 AT93306024T AT93306024T ATE199049T1 AT E199049 T1 ATE199049 T1 AT E199049T1 AT 93306024 T AT93306024 T AT 93306024T AT 93306024 T AT93306024 T AT 93306024T AT E199049 T1 ATE199049 T1 AT E199049T1
Authority
AT
Austria
Prior art keywords
silicon carbide
high quality
producing high
oxidizing
dioxide passivation
Prior art date
Application number
AT93306024T
Other languages
English (en)
Inventor
John W Palmour
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Application granted granted Critical
Publication of ATE199049T1 publication Critical patent/ATE199049T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D64/01366—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/051—Manufacture or treatment of Schottky diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/055—Manufacture or treatment of transit-time diodes, e.g. IMPATT or TRAPATT diodes
    • H10W74/137—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/958—Passivation layer

Landscapes

  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
AT93306024T 1992-06-05 1993-07-30 Verfahren zur erzeugung von silizium-dioxid- passivierung hoher qualität auf silizium-carbid ATE199049T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US07/893,642 US5459107A (en) 1992-06-05 1992-06-05 Method of obtaining high quality silicon dioxide passivation on silicon carbide and resulting passivated structures
EP93306024A EP0637069B1 (de) 1992-06-05 1993-07-30 Verfahren zur Erzeugung von Silizium-Dioxid-Passivierung hoher Qualität auf Silizium-Carbid
JP5205230A JP3060434B2 (ja) 1992-06-05 1993-08-19 炭化ケイ素表面に高品質パッシベーション層を形成する方法及びパッシベーション領域を有する炭化ケイ素基材のデバイス構造

Publications (1)

Publication Number Publication Date
ATE199049T1 true ATE199049T1 (de) 2001-02-15

Family

ID=27235461

Family Applications (1)

Application Number Title Priority Date Filing Date
AT93306024T ATE199049T1 (de) 1992-06-05 1993-07-30 Verfahren zur erzeugung von silizium-dioxid- passivierung hoher qualität auf silizium-carbid

Country Status (6)

Country Link
US (1) US5459107A (de)
EP (1) EP0637069B1 (de)
JP (1) JP3060434B2 (de)
AT (1) ATE199049T1 (de)
DE (1) DE69329905T2 (de)
ES (1) ES2155828T3 (de)

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JP3770014B2 (ja) 1999-02-09 2006-04-26 日亜化学工業株式会社 窒化物半導体素子
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US6528373B2 (en) 2001-02-12 2003-03-04 Cree, Inc. Layered dielectric on silicon carbide semiconductor structures
US6514779B1 (en) † 2001-10-17 2003-02-04 Cree, Inc. Large area silicon carbide devices and manufacturing methods therefor
JP3960837B2 (ja) * 2002-03-22 2007-08-15 三菱電機株式会社 半導体装置およびその製法
US7022378B2 (en) 2002-08-30 2006-04-04 Cree, Inc. Nitrogen passivation of interface states in SiO2/SiC structures
US7221010B2 (en) 2002-12-20 2007-05-22 Cree, Inc. Vertical JFET limited silicon carbide power metal-oxide semiconductor field effect transistors
US6979863B2 (en) 2003-04-24 2005-12-27 Cree, Inc. Silicon carbide MOSFETs with integrated antiparallel junction barrier Schottky free wheeling diodes and methods of fabricating the same
US7074643B2 (en) 2003-04-24 2006-07-11 Cree, Inc. Silicon carbide power devices with self-aligned source and well regions and methods of fabricating same
JP4526243B2 (ja) * 2003-06-27 2010-08-18 新日本無線株式会社 シリコンカーバイド半導体装置の製造方法
US7118970B2 (en) 2004-06-22 2006-10-10 Cree, Inc. Methods of fabricating silicon carbide devices with hybrid well regions
JP4772301B2 (ja) * 2004-08-20 2011-09-14 新日本無線株式会社 シリコンカーバイド・インパットダイオードの製造方法
US7314521B2 (en) * 2004-10-04 2008-01-01 Cree, Inc. Low micropipe 100 mm silicon carbide wafer
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US8288220B2 (en) * 2009-03-27 2012-10-16 Cree, Inc. Methods of forming semiconductor devices including epitaxial layers and related structures
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US8629509B2 (en) 2009-06-02 2014-01-14 Cree, Inc. High voltage insulated gate bipolar transistors with minority carrier diverter
US8541787B2 (en) 2009-07-15 2013-09-24 Cree, Inc. High breakdown voltage wide band-gap MOS-gated bipolar junction transistors with avalanche capability
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Also Published As

Publication number Publication date
US5459107A (en) 1995-10-17
EP0637069B1 (de) 2001-01-31
DE69329905D1 (de) 2001-03-08
DE69329905T2 (de) 2001-05-23
ES2155828T3 (es) 2001-06-01
JP3060434B2 (ja) 2000-07-10
EP0637069A1 (de) 1995-02-01
JPH0766192A (ja) 1995-03-10

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