ATE195591T1 - Vermeidung der verkürzung eines musters unter verwendung einer schiefen beleuchtung mit rotierenden dipol- und polarisationsblenden - Google Patents
Vermeidung der verkürzung eines musters unter verwendung einer schiefen beleuchtung mit rotierenden dipol- und polarisationsblendenInfo
- Publication number
- ATE195591T1 ATE195591T1 AT96929479T AT96929479T ATE195591T1 AT E195591 T1 ATE195591 T1 AT E195591T1 AT 96929479 T AT96929479 T AT 96929479T AT 96929479 T AT96929479 T AT 96929479T AT E195591 T1 ATE195591 T1 AT E195591T1
- Authority
- AT
- Austria
- Prior art keywords
- exposure
- pattern
- axis illumination
- dipol
- rotating
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70558—Dose control, i.e. achievement of a desired dose
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
- G03F7/701—Off-axis setting using an aperture
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70566—Polarisation control
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Polarising Elements (AREA)
- Illuminated Signs And Luminous Advertising (AREA)
- Eye Examination Apparatus (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/531,767 US5815247A (en) | 1995-09-21 | 1995-09-21 | Avoidance of pattern shortening by using off axis illumination with dipole and polarizing apertures |
PCT/IB1996/000971 WO1997011411A1 (en) | 1995-09-21 | 1996-09-03 | Avoidance of pattern shortening by using an off axis illumination with twisting dipole and polarizing apertures |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE195591T1 true ATE195591T1 (de) | 2000-09-15 |
Family
ID=24118965
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT96929479T ATE195591T1 (de) | 1995-09-21 | 1996-09-03 | Vermeidung der verkürzung eines musters unter verwendung einer schiefen beleuchtung mit rotierenden dipol- und polarisationsblenden |
Country Status (8)
Country | Link |
---|---|
US (1) | US5815247A (de) |
EP (1) | EP0852029B1 (de) |
JP (1) | JPH11512569A (de) |
KR (1) | KR100464843B1 (de) |
AT (1) | ATE195591T1 (de) |
DE (1) | DE69609848T2 (de) |
TW (1) | TW376529B (de) |
WO (1) | WO1997011411A1 (de) |
Families Citing this family (59)
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US6097472A (en) * | 1997-04-17 | 2000-08-01 | Canon Kabushiki Kaisha | Apparatus and method for exposing a pattern on a ball-like device material |
US6930754B1 (en) * | 1998-06-30 | 2005-08-16 | Canon Kabushiki Kaisha | Multiple exposure method |
EP1095310A4 (de) * | 1998-07-10 | 2004-10-20 | Ball Semiconductor Inc | Reflexionssystem zur abbildung auf ein nichtplanares substrat |
US6215578B1 (en) * | 1998-09-17 | 2001-04-10 | Vanguard International Semiconductor Corporation | Electronically switchable off-axis illumination blade for stepper illumination system |
DE19921795A1 (de) * | 1999-05-11 | 2000-11-23 | Zeiss Carl Fa | Projektions-Belichtungsanlage und Belichtungsverfahren der Mikrolithographie |
EP1091252A3 (de) * | 1999-09-29 | 2004-08-11 | ASML Netherlands B.V. | Apparat und Verfahren für Lithographie |
DE10010131A1 (de) * | 2000-03-03 | 2001-09-06 | Zeiss Carl | Mikrolithographie - Projektionsbelichtung mit tangentialer Polarisartion |
WO2002065214A1 (en) * | 2001-02-13 | 2002-08-22 | Advanced Micro Devices, Inc. | Dose control in response to stepper optical paramaters |
DE10124566A1 (de) * | 2001-05-15 | 2002-11-21 | Zeiss Carl | Optisches Abbildungssystem mit Polarisationsmitteln und Quarzkristallplatte hierfür |
TWI295070B (en) * | 2001-12-21 | 2008-03-21 | Asml Netherlands Bv | Semiconductor device manufacturing method,semiconductor device manufactured thereby and lithographic apparatus therefor |
US20050134825A1 (en) * | 2002-02-08 | 2005-06-23 | Carl Zeiss Smt Ag | Polarization-optimized illumination system |
US6915505B2 (en) | 2002-03-25 | 2005-07-05 | Asml Masktools B.V. | Method and apparatus for performing rule-based gate shrink utilizing dipole illumination |
AU2003240931A1 (en) | 2002-05-29 | 2003-12-19 | Massachusetts Institute Of Technology | A method for photolithography using multiple illuminations and a single fine feature mask |
EP1367446A1 (de) * | 2002-05-31 | 2003-12-03 | ASML Netherlands B.V. | Lithographischer Apparat |
CN1461974A (zh) * | 2002-05-31 | 2003-12-17 | Asml荷兰有限公司 | 组装光学元件套件和方法,光学元件,平版印刷机和器件制造法 |
KR101163435B1 (ko) | 2003-04-09 | 2012-07-13 | 가부시키가이샤 니콘 | 노광 방법 및 장치, 그리고 디바이스 제조 방법 |
US20050008942A1 (en) * | 2003-07-08 | 2005-01-13 | Yung-Feng Cheng | [photomask with internal assistant pattern forenhancing resolution of multi-dimension pattern] |
AU2003255441A1 (en) * | 2003-08-14 | 2005-03-29 | Carl Zeiss Smt Ag | Illuminating device for a microlithographic projection illumination system |
AU2003270216A1 (en) * | 2003-09-18 | 2005-04-27 | Carl Zeiss Smt Ag | Method for radiation treating an optical system |
US7408616B2 (en) * | 2003-09-26 | 2008-08-05 | Carl Zeiss Smt Ag | Microlithographic exposure method as well as a projection exposure system for carrying out the method |
TW201834020A (zh) | 2003-10-28 | 2018-09-16 | 日商尼康股份有限公司 | 照明光學裝置、曝光裝置、曝光方法以及元件製造方法 |
TWI512335B (zh) | 2003-11-20 | 2015-12-11 | 尼康股份有限公司 | 光束變換元件、光學照明裝置、曝光裝置、以及曝光方法 |
US7368781B2 (en) * | 2003-12-31 | 2008-05-06 | Intel Corporation | Contactless flash memory array |
US8270077B2 (en) * | 2004-01-16 | 2012-09-18 | Carl Zeiss Smt Gmbh | Polarization-modulating optical element |
US8279524B2 (en) * | 2004-01-16 | 2012-10-02 | Carl Zeiss Smt Gmbh | Polarization-modulating optical element |
US20070019179A1 (en) | 2004-01-16 | 2007-01-25 | Damian Fiolka | Polarization-modulating optical element |
TWI395068B (zh) | 2004-01-27 | 2013-05-01 | 尼康股份有限公司 | 光學系統、曝光裝置以及曝光方法 |
TWI412067B (zh) | 2004-02-06 | 2013-10-11 | 尼康股份有限公司 | 偏光變換元件、光學照明裝置、曝光裝置以及曝光方法 |
JP3998645B2 (ja) * | 2004-02-10 | 2007-10-31 | 株式会社東芝 | リソグラフィ補正システム、リソグラフィ補正方法及び半導体装置の製造方法 |
JP4497968B2 (ja) * | 2004-03-18 | 2010-07-07 | キヤノン株式会社 | 照明装置、露光装置及びデバイス製造方法 |
US7384725B2 (en) * | 2004-04-02 | 2008-06-10 | Advanced Micro Devices, Inc. | System and method for fabricating contact holes |
US7324280B2 (en) * | 2004-05-25 | 2008-01-29 | Asml Holding N.V. | Apparatus for providing a pattern of polarization |
EP1621930A3 (de) * | 2004-07-29 | 2011-07-06 | Carl Zeiss SMT GmbH | Beleuchtungssystem für eine mikrolithographische Projektionsbelichtungsanlage |
KR100684872B1 (ko) * | 2004-08-03 | 2007-02-20 | 삼성전자주식회사 | 빛의 편광을 공간적으로 제어하는 광학 시스템 및 이를제작하는 방법 |
US7432517B2 (en) * | 2004-11-19 | 2008-10-07 | Asml Netherlands B.V. | Pulse modifier, lithographic apparatus, and device manufacturing method |
JP2006179516A (ja) * | 2004-12-20 | 2006-07-06 | Toshiba Corp | 露光装置、露光方法及び半導体装置の製造方法 |
US7517642B2 (en) * | 2004-12-30 | 2009-04-14 | Intel Corporation | Plane waves to control critical dimension |
TW200923418A (en) * | 2005-01-21 | 2009-06-01 | Nikon Corp | Exposure device, exposure method, fabricating method of device, exposure system, information collecting device, and measuring device |
JP2006269853A (ja) * | 2005-03-25 | 2006-10-05 | Sony Corp | 露光装置および露光方法 |
EP3232270A3 (de) | 2005-05-12 | 2017-12-13 | Nikon Corporation | Optisches projektionssystem, belichtungsvorrichtung und belichtungsverfahren |
JP4676815B2 (ja) * | 2005-05-26 | 2011-04-27 | ルネサスエレクトロニクス株式会社 | 露光装置および露光方法 |
JP2007103835A (ja) * | 2005-10-07 | 2007-04-19 | Toshiba Corp | 露光装置及び露光方法 |
KR100746221B1 (ko) * | 2005-12-23 | 2007-08-03 | 삼성전자주식회사 | 사입사 조명장치, 노광장비 및 사입사 조명방법 |
EP1978546A4 (de) * | 2005-12-28 | 2010-08-04 | Nikon Corp | Belichtungsvorrichtung, belichtungsverfahren und bauelemente-herstellungsverfahren |
US20070264581A1 (en) * | 2006-05-09 | 2007-11-15 | Schwarz Christian J | Patterning masks and methods |
EP1857879A1 (de) * | 2006-05-15 | 2007-11-21 | Advanced Mask Technology Center GmbH & Co. KG | Beleuchtungssystem und Photolithographiegerät |
DE102006038643B4 (de) * | 2006-08-17 | 2009-06-10 | Carl Zeiss Smt Ag | Mikrolithographische Projektionsbelichtungsanlage sowie mikrolithographisches Belichtungsverfahren |
US7799486B2 (en) * | 2006-11-21 | 2010-09-21 | Infineon Technologies Ag | Lithography masks and methods of manufacture thereof |
US8451427B2 (en) | 2007-09-14 | 2013-05-28 | Nikon Corporation | Illumination optical system, exposure apparatus, optical element and manufacturing method thereof, and device manufacturing method |
JP5267029B2 (ja) | 2007-10-12 | 2013-08-21 | 株式会社ニコン | 照明光学装置、露光装置及びデバイスの製造方法 |
EP2179329A1 (de) | 2007-10-16 | 2010-04-28 | Nikon Corporation | Optisches beleuchtungssystem, belichtungsgerät und geräteherstellungsverfahren |
WO2009050976A1 (en) | 2007-10-16 | 2009-04-23 | Nikon Corporation | Illumination optical system, exposure apparatus, and device manufacturing method |
US8379187B2 (en) | 2007-10-24 | 2013-02-19 | Nikon Corporation | Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method |
US9116346B2 (en) | 2007-11-06 | 2015-08-25 | Nikon Corporation | Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method |
DE102008009601A1 (de) * | 2008-02-15 | 2009-08-20 | Carl Zeiss Smt Ag | Optisches System für eine mikrolithographische Projektionsbelichtungsanlage sowie mikrolithographisches Belichtungsverfahren |
NL1036786A1 (nl) * | 2008-05-08 | 2009-11-11 | Asml Netherlands Bv | Lithographic apparatus and method. |
DE102009016608A1 (de) | 2008-05-21 | 2009-11-26 | Carl Zeiss Smt Ag | Beleuchtungsoptik für eine Mikrolithographie-Projektionsbelichtungsanlage |
WO2009145048A1 (ja) | 2008-05-28 | 2009-12-03 | 株式会社ニコン | 空間光変調器の検査装置および検査方法、照明光学系、照明光学系の調整方法、露光装置、およびデバイス製造方法 |
JP6168383B2 (ja) * | 2012-12-27 | 2017-07-26 | 三星電子株式会社Samsung Electronics Co.,Ltd. | 欠陥検査装置及び欠陥検査方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5465220A (en) * | 1992-06-02 | 1995-11-07 | Fujitsu Limited | Optical exposure method |
US5144362A (en) * | 1990-11-14 | 1992-09-01 | Mitsubishi Denki Kabushiki Kaisha | Projection aligner |
US5305054A (en) * | 1991-02-22 | 1994-04-19 | Canon Kabushiki Kaisha | Imaging method for manufacture of microdevices |
US5530518A (en) * | 1991-12-25 | 1996-06-25 | Nikon Corporation | Projection exposure apparatus |
US5300613A (en) * | 1992-06-02 | 1994-04-05 | Shin-Etsu Chemical Co., Ltd. | Fluorine-containing organosilicon compounds |
JP3158691B2 (ja) * | 1992-08-07 | 2001-04-23 | 株式会社ニコン | 露光装置及び方法、並びに照明光学装置 |
US5446587A (en) * | 1992-09-03 | 1995-08-29 | Samsung Electronics Co., Ltd. | Projection method and projection system and mask therefor |
JP3316936B2 (ja) * | 1992-10-22 | 2002-08-19 | 株式会社ニコン | 照明光学装置、露光装置、及び該露光装置を用いた転写方法 |
JP2852169B2 (ja) * | 1993-02-25 | 1999-01-27 | 日本電気株式会社 | 投影露光方法および装置 |
JP3395280B2 (ja) * | 1993-09-21 | 2003-04-07 | 株式会社ニコン | 投影露光装置及び方法 |
-
1995
- 1995-09-21 US US08/531,767 patent/US5815247A/en not_active Expired - Lifetime
-
1996
- 1996-09-03 WO PCT/IB1996/000971 patent/WO1997011411A1/en not_active Application Discontinuation
- 1996-09-03 JP JP9512528A patent/JPH11512569A/ja active Pending
- 1996-09-03 KR KR10-1998-0702058A patent/KR100464843B1/ko not_active IP Right Cessation
- 1996-09-03 AT AT96929479T patent/ATE195591T1/de active
- 1996-09-03 EP EP96929479A patent/EP0852029B1/de not_active Expired - Lifetime
- 1996-09-03 DE DE69609848T patent/DE69609848T2/de not_active Expired - Lifetime
- 1996-11-15 TW TW085114012A patent/TW376529B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
DE69609848T2 (de) | 2001-03-29 |
KR19990063613A (ko) | 1999-07-26 |
US5815247A (en) | 1998-09-29 |
DE69609848D1 (de) | 2000-09-21 |
KR100464843B1 (ko) | 2005-01-15 |
JPH11512569A (ja) | 1999-10-26 |
EP0852029B1 (de) | 2000-08-16 |
WO1997011411A1 (en) | 1997-03-27 |
EP0852029A1 (de) | 1998-07-08 |
TW376529B (en) | 1999-12-11 |
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