DE69609848D1 - Vermeidung der verkürzung eines musters unter verwendung einer schiefen beleuchtung mit rotierenden dipol- und polarisationsblenden - Google Patents

Vermeidung der verkürzung eines musters unter verwendung einer schiefen beleuchtung mit rotierenden dipol- und polarisationsblenden

Info

Publication number
DE69609848D1
DE69609848D1 DE69609848T DE69609848T DE69609848D1 DE 69609848 D1 DE69609848 D1 DE 69609848D1 DE 69609848 T DE69609848 T DE 69609848T DE 69609848 T DE69609848 T DE 69609848T DE 69609848 D1 DE69609848 D1 DE 69609848D1
Authority
DE
Germany
Prior art keywords
exposure
pattern
axis illumination
done
solve
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69609848T
Other languages
English (en)
Other versions
DE69609848T2 (de
Inventor
L Poschenrieder
Takashi Sato
Tsukasa Azuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Toshiba Corp
Original Assignee
Siemens AG
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, Toshiba Corp filed Critical Siemens AG
Application granted granted Critical
Publication of DE69609848D1 publication Critical patent/DE69609848D1/de
Publication of DE69609848T2 publication Critical patent/DE69609848T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/701—Off-axis setting using an aperture
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70566—Polarisation control

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Polarising Elements (AREA)
  • Illuminated Signs And Luminous Advertising (AREA)
  • Eye Examination Apparatus (AREA)
DE69609848T 1995-09-21 1996-09-03 Vermeidung der verkürzung eines musters unter verwendung einer schiefen beleuchtung mit rotierenden dipol- und polarisationsblenden Expired - Lifetime DE69609848T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/531,767 US5815247A (en) 1995-09-21 1995-09-21 Avoidance of pattern shortening by using off axis illumination with dipole and polarizing apertures
PCT/IB1996/000971 WO1997011411A1 (en) 1995-09-21 1996-09-03 Avoidance of pattern shortening by using an off axis illumination with twisting dipole and polarizing apertures

Publications (2)

Publication Number Publication Date
DE69609848D1 true DE69609848D1 (de) 2000-09-21
DE69609848T2 DE69609848T2 (de) 2001-03-29

Family

ID=24118965

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69609848T Expired - Lifetime DE69609848T2 (de) 1995-09-21 1996-09-03 Vermeidung der verkürzung eines musters unter verwendung einer schiefen beleuchtung mit rotierenden dipol- und polarisationsblenden

Country Status (8)

Country Link
US (1) US5815247A (de)
EP (1) EP0852029B1 (de)
JP (1) JPH11512569A (de)
KR (1) KR100464843B1 (de)
AT (1) ATE195591T1 (de)
DE (1) DE69609848T2 (de)
TW (1) TW376529B (de)
WO (1) WO1997011411A1 (de)

Families Citing this family (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6097472A (en) * 1997-04-17 2000-08-01 Canon Kabushiki Kaisha Apparatus and method for exposing a pattern on a ball-like device material
US6930754B1 (en) * 1998-06-30 2005-08-16 Canon Kabushiki Kaisha Multiple exposure method
EP1095310A4 (de) * 1998-07-10 2004-10-20 Ball Semiconductor Inc Reflexionssystem zur abbildung auf ein nichtplanares substrat
US6215578B1 (en) * 1998-09-17 2001-04-10 Vanguard International Semiconductor Corporation Electronically switchable off-axis illumination blade for stepper illumination system
DE19921795A1 (de) * 1999-05-11 2000-11-23 Zeiss Carl Fa Projektions-Belichtungsanlage und Belichtungsverfahren der Mikrolithographie
EP1091252A3 (de) * 1999-09-29 2004-08-11 ASML Netherlands B.V. Apparat und Verfahren für Lithographie
DE10010131A1 (de) * 2000-03-03 2001-09-06 Zeiss Carl Mikrolithographie - Projektionsbelichtung mit tangentialer Polarisartion
WO2002065214A1 (en) * 2001-02-13 2002-08-22 Advanced Micro Devices, Inc. Dose control in response to stepper optical paramaters
DE10124566A1 (de) * 2001-05-15 2002-11-21 Zeiss Carl Optisches Abbildungssystem mit Polarisationsmitteln und Quarzkristallplatte hierfür
TWI295070B (en) * 2001-12-21 2008-03-21 Asml Netherlands Bv Semiconductor device manufacturing method,semiconductor device manufactured thereby and lithographic apparatus therefor
US20050134825A1 (en) * 2002-02-08 2005-06-23 Carl Zeiss Smt Ag Polarization-optimized illumination system
US6915505B2 (en) 2002-03-25 2005-07-05 Asml Masktools B.V. Method and apparatus for performing rule-based gate shrink utilizing dipole illumination
AU2003240931A1 (en) 2002-05-29 2003-12-19 Massachusetts Institute Of Technology A method for photolithography using multiple illuminations and a single fine feature mask
EP1367446A1 (de) * 2002-05-31 2003-12-03 ASML Netherlands B.V. Lithographischer Apparat
CN1461974A (zh) * 2002-05-31 2003-12-17 Asml荷兰有限公司 组装光学元件套件和方法，光学元件，平版印刷机和器件制造法
KR101163435B1 (ko) 2003-04-09 2012-07-13 가부시키가이샤 니콘 노광 방법 및 장치, 그리고 디바이스 제조 방법
US20050008942A1 (en) * 2003-07-08 2005-01-13 Yung-Feng Cheng [photomask with internal assistant pattern forenhancing resolution of multi-dimension pattern]
AU2003255441A1 (en) * 2003-08-14 2005-03-29 Carl Zeiss Smt Ag Illuminating device for a microlithographic projection illumination system
AU2003270216A1 (en) * 2003-09-18 2005-04-27 Carl Zeiss Smt Ag Method for radiation treating an optical system
US7408616B2 (en) * 2003-09-26 2008-08-05 Carl Zeiss Smt Ag Microlithographic exposure method as well as a projection exposure system for carrying out the method
TW201834020A (zh) 2003-10-28 2018-09-16 日商尼康股份有限公司 照明光學裝置、曝光裝置、曝光方法以及元件製造方法
TWI512335B (zh) 2003-11-20 2015-12-11 尼康股份有限公司 光束變換元件、光學照明裝置、曝光裝置、以及曝光方法
US7368781B2 (en) * 2003-12-31 2008-05-06 Intel Corporation Contactless flash memory array
US8270077B2 (en) * 2004-01-16 2012-09-18 Carl Zeiss Smt Gmbh Polarization-modulating optical element
US8279524B2 (en) * 2004-01-16 2012-10-02 Carl Zeiss Smt Gmbh Polarization-modulating optical element
US20070019179A1 (en) 2004-01-16 2007-01-25 Damian Fiolka Polarization-modulating optical element
TWI395068B (zh) 2004-01-27 2013-05-01 尼康股份有限公司 光學系統、曝光裝置以及曝光方法
TWI412067B (zh) 2004-02-06 2013-10-11 尼康股份有限公司 偏光變換元件、光學照明裝置、曝光裝置以及曝光方法
JP3998645B2 (ja) * 2004-02-10 2007-10-31 株式会社東芝 リソグラフィ補正システム、リソグラフィ補正方法及び半導体装置の製造方法
JP4497968B2 (ja) * 2004-03-18 2010-07-07 キヤノン株式会社 照明装置、露光装置及びデバイス製造方法
US7384725B2 (en) * 2004-04-02 2008-06-10 Advanced Micro Devices, Inc. System and method for fabricating contact holes
US7324280B2 (en) * 2004-05-25 2008-01-29 Asml Holding N.V. Apparatus for providing a pattern of polarization
EP1621930A3 (de) * 2004-07-29 2011-07-06 Carl Zeiss SMT GmbH Beleuchtungssystem für eine mikrolithographische Projektionsbelichtungsanlage
KR100684872B1 (ko) * 2004-08-03 2007-02-20 삼성전자주식회사 빛의 편광을 공간적으로 제어하는 광학 시스템 및 이를제작하는 방법
US7432517B2 (en) * 2004-11-19 2008-10-07 Asml Netherlands B.V. Pulse modifier, lithographic apparatus, and device manufacturing method
JP2006179516A (ja) * 2004-12-20 2006-07-06 Toshiba Corp 露光装置、露光方法及び半導体装置の製造方法
US7517642B2 (en) * 2004-12-30 2009-04-14 Intel Corporation Plane waves to control critical dimension
TW200923418A (en) * 2005-01-21 2009-06-01 Nikon Corp Exposure device, exposure method, fabricating method of device, exposure system, information collecting device, and measuring device
JP2006269853A (ja) * 2005-03-25 2006-10-05 Sony Corp 露光装置および露光方法
EP3232270A3 (de) 2005-05-12 2017-12-13 Nikon Corporation Optisches projektionssystem, belichtungsvorrichtung und belichtungsverfahren
JP4676815B2 (ja) * 2005-05-26 2011-04-27 ルネサスエレクトロニクス株式会社 露光装置および露光方法
JP2007103835A (ja) * 2005-10-07 2007-04-19 Toshiba Corp 露光装置及び露光方法
KR100746221B1 (ko) * 2005-12-23 2007-08-03 삼성전자주식회사 사입사 조명장치, 노광장비 및 사입사 조명방법
EP1978546A4 (de) * 2005-12-28 2010-08-04 Nikon Corp Belichtungsvorrichtung, belichtungsverfahren und bauelemente-herstellungsverfahren
US20070264581A1 (en) * 2006-05-09 2007-11-15 Schwarz Christian J Patterning masks and methods
EP1857879A1 (de) * 2006-05-15 2007-11-21 Advanced Mask Technology Center GmbH & Co. KG Beleuchtungssystem und Photolithographiegerät
DE102006038643B4 (de) * 2006-08-17 2009-06-10 Carl Zeiss Smt Ag Mikrolithographische Projektionsbelichtungsanlage sowie mikrolithographisches Belichtungsverfahren
US7799486B2 (en) * 2006-11-21 2010-09-21 Infineon Technologies Ag Lithography masks and methods of manufacture thereof
US8451427B2 (en) 2007-09-14 2013-05-28 Nikon Corporation Illumination optical system, exposure apparatus, optical element and manufacturing method thereof, and device manufacturing method
JP5267029B2 (ja) 2007-10-12 2013-08-21 株式会社ニコン 照明光学装置、露光装置及びデバイスの製造方法
EP2179329A1 (de) 2007-10-16 2010-04-28 Nikon Corporation Optisches beleuchtungssystem, belichtungsgerät und geräteherstellungsverfahren
WO2009050976A1 (en) 2007-10-16 2009-04-23 Nikon Corporation Illumination optical system, exposure apparatus, and device manufacturing method
US8379187B2 (en) 2007-10-24 2013-02-19 Nikon Corporation Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method
US9116346B2 (en) 2007-11-06 2015-08-25 Nikon Corporation Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method
DE102008009601A1 (de) * 2008-02-15 2009-08-20 Carl Zeiss Smt Ag Optisches System für eine mikrolithographische Projektionsbelichtungsanlage sowie mikrolithographisches Belichtungsverfahren
NL1036786A1 (nl) * 2008-05-08 2009-11-11 Asml Netherlands Bv Lithographic apparatus and method.
DE102009016608A1 (de) 2008-05-21 2009-11-26 Carl Zeiss Smt Ag Beleuchtungsoptik für eine Mikrolithographie-Projektionsbelichtungsanlage
WO2009145048A1 (ja) 2008-05-28 2009-12-03 株式会社ニコン 空間光変調器の検査装置および検査方法、照明光学系、照明光学系の調整方法、露光装置、およびデバイス製造方法
JP6168383B2 (ja) * 2012-12-27 2017-07-26 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． 欠陥検査装置及び欠陥検査方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5465220A (en) * 1992-06-02 1995-11-07 Fujitsu Limited Optical exposure method
US5144362A (en) * 1990-11-14 1992-09-01 Mitsubishi Denki Kabushiki Kaisha Projection aligner
US5305054A (en) * 1991-02-22 1994-04-19 Canon Kabushiki Kaisha Imaging method for manufacture of microdevices
US5530518A (en) * 1991-12-25 1996-06-25 Nikon Corporation Projection exposure apparatus
US5300613A (en) * 1992-06-02 1994-04-05 Shin-Etsu Chemical Co., Ltd. Fluorine-containing organosilicon compounds
JP3158691B2 (ja) * 1992-08-07 2001-04-23 株式会社ニコン 露光装置及び方法、並びに照明光学装置
US5446587A (en) * 1992-09-03 1995-08-29 Samsung Electronics Co., Ltd. Projection method and projection system and mask therefor
JP3316936B2 (ja) * 1992-10-22 2002-08-19 株式会社ニコン 照明光学装置、露光装置、及び該露光装置を用いた転写方法
JP2852169B2 (ja) * 1993-02-25 1999-01-27 日本電気株式会社 投影露光方法および装置
JP3395280B2 (ja) * 1993-09-21 2003-04-07 株式会社ニコン 投影露光装置及び方法

Also Published As

Publication number Publication date
DE69609848T2 (de) 2001-03-29
KR19990063613A (ko) 1999-07-26
US5815247A (en) 1998-09-29
KR100464843B1 (ko) 2005-01-15
JPH11512569A (ja) 1999-10-26
EP0852029B1 (de) 2000-08-16
WO1997011411A1 (en) 1997-03-27
ATE195591T1 (de) 2000-09-15
EP0852029A1 (de) 1998-07-08
TW376529B (en) 1999-12-11

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