ATE191295T1 - Speicher - Google Patents

Speicher

Info

Publication number
ATE191295T1
ATE191295T1 AT91106051T AT91106051T ATE191295T1 AT E191295 T1 ATE191295 T1 AT E191295T1 AT 91106051 T AT91106051 T AT 91106051T AT 91106051 T AT91106051 T AT 91106051T AT E191295 T1 ATE191295 T1 AT E191295T1
Authority
AT
Austria
Prior art keywords
memory
dram
recovery
fetch
sram
Prior art date
Application number
AT91106051T
Other languages
English (en)
Inventor
Shiu Kwong Chan
Joseph Henry Datres Jr
Tin-Chee Lo
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of ATE191295T1 publication Critical patent/ATE191295T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4076—Timing circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Memory System Of A Hierarchy Structure (AREA)
  • Memory System (AREA)
  • Liquid Crystal (AREA)
  • Centrifugal Separators (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Communication Control (AREA)
  • Magnetically Actuated Valves (AREA)
AT91106051T 1990-07-23 1991-04-16 Speicher ATE191295T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/555,960 US5359722A (en) 1990-07-23 1990-07-23 Method for shortening memory fetch time relative to memory store time and controlling recovery in a DRAM

Publications (1)

Publication Number Publication Date
ATE191295T1 true ATE191295T1 (de) 2000-04-15

Family

ID=24219315

Family Applications (1)

Application Number Title Priority Date Filing Date
AT91106051T ATE191295T1 (de) 1990-07-23 1991-04-16 Speicher

Country Status (9)

Country Link
US (1) US5359722A (de)
EP (1) EP0468141B1 (de)
JP (1) JP2726578B2 (de)
KR (1) KR950014552B1 (de)
AT (1) ATE191295T1 (de)
BR (1) BR9102966A (de)
CA (1) CA2044121C (de)
DE (1) DE69132077T2 (de)
ES (1) ES2143975T3 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5226147A (en) 1987-11-06 1993-07-06 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device for simple cache system
EP0552667B1 (de) 1992-01-22 1999-04-21 Enhanced Memory Systems, Inc. DRAM mit integrierten Registern
AU4798793A (en) 1992-08-10 1994-03-03 Monolithic System Technology, Inc. Fault-tolerant, high-speed bus system and bus interface for wafer-scale integration
US5651130A (en) * 1993-03-22 1997-07-22 Compaq Computer Corporation Memory controller that dynamically predicts page misses
US6003120A (en) * 1993-12-30 1999-12-14 Intel Corporation Method and apparatus for performing variable length processor write cycles
JPH0916470A (ja) * 1995-07-03 1997-01-17 Mitsubishi Electric Corp 半導体記憶装置
US5898856A (en) * 1995-09-15 1999-04-27 Intel Corporation Method and apparatus for automatically detecting a selected cache type
KR100225947B1 (ko) * 1996-06-27 1999-10-15 김영환 라이트 리커버리 보장 회로
US5892981A (en) * 1996-10-10 1999-04-06 Hewlett-Packard Company Memory system and device
US6167486A (en) * 1996-11-18 2000-12-26 Nec Electronics, Inc. Parallel access virtual channel memory system with cacheable channels
US5987577A (en) * 1997-04-24 1999-11-16 International Business Machines Dual word enable method and apparatus for memory arrays
AU9798798A (en) * 1997-10-10 1999-05-03 Rambus Incorporated Power control system for synchronous memory device
US6154821A (en) * 1998-03-10 2000-11-28 Rambus Inc. Method and apparatus for initializing dynamic random access memory (DRAM) devices by levelizing a read domain
US5963481A (en) * 1998-06-30 1999-10-05 Enhanced Memory Systems, Inc. Embedded enhanced DRAM, and associated method
US6330636B1 (en) 1999-01-29 2001-12-11 Enhanced Memory Systems, Inc. Double data rate synchronous dynamic random access memory device incorporating a static RAM cache per memory bank
US6708254B2 (en) 1999-11-10 2004-03-16 Nec Electronics America, Inc. Parallel access virtual channel memory system
US6862654B1 (en) * 2000-08-17 2005-03-01 Micron Technology, Inc. Method and system for using dynamic random access memory as cache memory
US6779076B1 (en) * 2000-10-05 2004-08-17 Micron Technology, Inc. Method and system for using dynamic random access memory as cache memory
DE10206689B4 (de) * 2002-02-18 2004-03-18 Infineon Technologies Ag Integrierter Speicher und Verfahren zum Betrieb eines integrierten Speichers
JP4820795B2 (ja) * 2007-10-04 2011-11-24 パナソニック株式会社 半導体記憶装置
CN101667158B (zh) * 2009-09-15 2015-07-01 威盛电子股份有限公司 串流上下文的高速缓存系统
US10386875B2 (en) * 2017-04-27 2019-08-20 Pixart Imaging Inc. Bandgap reference circuit and sensor chip using the same
US11614770B2 (en) * 2020-09-16 2023-03-28 Gowin Semiconductor Corporation Methods and apparatus for organizing a programmable semiconductor device into multiple clock regions

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3740723A (en) * 1970-12-28 1973-06-19 Ibm Integral hierarchical binary storage element
US4586131A (en) * 1982-02-22 1986-04-29 Texas Instruments Incorporated Microcomputer having data move circuits for within-memory shift of data words
US4491910A (en) * 1982-02-22 1985-01-01 Texas Instruments Incorporated Microcomputer having data shift within memory
US4577293A (en) * 1984-06-01 1986-03-18 International Business Machines Corporation Distributed, on-chip cache
US4725945A (en) * 1984-09-18 1988-02-16 International Business Machines Corp. Distributed cache in dynamic rams
US4641276A (en) * 1984-10-22 1987-02-03 General Electric Company Serial-parallel data transfer system for VLSI data paths
US4667313A (en) * 1985-01-22 1987-05-19 Texas Instruments Incorporated Serially accessed semiconductor memory with tapped shift register
US4860192A (en) * 1985-02-22 1989-08-22 Intergraph Corporation Quadword boundary cache system
US4731758A (en) * 1985-06-21 1988-03-15 Advanced Micro Devices, Inc. Dual array memory with inter-array bi-directional data transfer
JPS6238590A (ja) * 1985-08-13 1987-02-19 Fujitsu Ltd 半導体記憶装置
JPS62194563A (ja) * 1986-02-21 1987-08-27 Hitachi Ltd バツフア記憶装置
JPS63180153A (ja) * 1987-01-21 1988-07-25 Hitachi Ltd キヤツシユ記憶のラインバツク制御方式
JPS63271555A (ja) * 1987-04-28 1988-11-09 Nec Corp 記憶制御方式
JP2708161B2 (ja) * 1987-12-17 1998-02-04 三菱電機株式会社 半導体記憶装置及び半導体記憶装置の書き込み／読み出し制御方法
US5019965A (en) * 1989-02-03 1991-05-28 Digital Equipment Corporation Method and apparatus for increasing the data storage rate of a computer system having a predefined data path width
US5058116A (en) * 1989-09-19 1991-10-15 International Business Machines Corporation Pipelined error checking and correction for cache memories
US5031141A (en) * 1990-04-06 1991-07-09 Intel Corporation Apparatus for generating self-timing for on-chip cache

Also Published As

Publication number Publication date
EP0468141A3 (en) 1992-09-30
EP0468141A2 (de) 1992-01-29
DE69132077D1 (de) 2000-05-04
CA2044121A1 (en) 1992-01-19
ES2143975T3 (es) 2000-06-01
US5359722A (en) 1994-10-25
DE69132077T2 (de) 2000-10-05
BR9102966A (pt) 1992-02-11
KR950014552B1 (ko) 1995-12-05
JPH04229484A (ja) 1992-08-18
KR920003161A (ko) 1992-02-29
CA2044121C (en) 1996-04-16
JP2726578B2 (ja) 1998-03-11
EP0468141B1 (de) 2000-03-29

Similar Documents

Publication Publication Date Title
ATE191295T1 (de) Speicher
US5111386A (en) Cache contained type semiconductor memory device and operating method therefor
US6404691B1 (en) Semiconductor memory device for simple cache system
JP2894170B2 (ja) メモリ装置
US5715203A (en) Semiconductor memory device and automatic bit line precharge method therefor
JPS6334652A (ja) コンピユ−タ・メモリのアクセス方法およびシステム
CA2011518A1 (en) Distributed cache dram chip and control method
KR930023842A (ko) 집적된 데이타 및 비디오 메모리용 버스 아키텍쳐
KR970062914A (ko) 어드레스 리맵핑에 의한 고밀도 simm 또는 dimm
KR100254752B1 (ko) 메모리 확장을 위한 로직을 갖는 동기식 sram
US5583823A (en) Dram refresh circuit
US20220335995A1 (en) Apparatuses and methods to perform low latency access of a memory
US5943681A (en) Semiconductor memory device having cache function
US20060190678A1 (en) Static random access memory (SRAM) compatible, high availability memory array and method employing synchronous dynamic random access memory (DRAM) in conjunction with a single DRAM cache and tag
JP2000268566A (ja) 同期型半導体記憶装置
US6073203A (en) Method for the continuous readout of a data sequence from a memory
US6249840B1 (en) Multi-bank ESDRAM with cross-coupled SRAM cache registers
US6094397A (en) Method and apparatus for addressing multi-bank memory
TW329047B (en) Semiconductor integrated circuit device providing DRAM semiconductor circuit device
US6400640B2 (en) Method for memory addressing
KR19980040799A (ko) 반도체 메모리 장치의 자동 프리차아지 신호 발생회로
JP3561670B2 (ja) メモリ制御回路
KR940008182B1 (ko) 디램(dram) 액세스 제어장치
KR950002727B1 (ko) 반도체 메모리 장치의 리프레쉬 주기 변환 회로
JPS6182588A (ja) 半導体記憶装置