TW329047B - Semiconductor integrated circuit device providing DRAM semiconductor circuit device - Google Patents
Semiconductor integrated circuit device providing DRAM semiconductor circuit deviceInfo
- Publication number
- TW329047B TW329047B TW086100683A TW86100683A TW329047B TW 329047 B TW329047 B TW 329047B TW 086100683 A TW086100683 A TW 086100683A TW 86100683 A TW86100683 A TW 86100683A TW 329047 B TW329047 B TW 329047B
- Authority
- TW
- Taiwan
- Prior art keywords
- dram
- circuit device
- semiconductor integrated
- integrated circuit
- period
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
- Dram (AREA)
Abstract
The present invention relates to a semiconductor integrated circuit device which is capable of accessing DRAM in a logical circuit without any control waiting during DRAM self-fresh period so as to be a high speed data transfer semiconductor integrated circuit device. For a semiconductor integrated circuit device including CPU, microcomputer and fast flash memory chip having memory and peripheral circuit, and logical circuit chip having DRAM and ASIC, the operation for controlling DRAM includes general executable DRAM access motion during general DRAM access period, executable DRAM self-fresh motion during DRAM self-fresh period, DRAM reading/writing signal R/W motion from logical circuit during requesting read/write access period, disarming refreshing, and accessing DRAM logical circuit.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP1996/003548 WO1998025271A1 (en) | 1996-12-04 | 1996-12-04 | Semiconductor integrated circuit device |
Publications (1)
Publication Number | Publication Date |
---|---|
TW329047B true TW329047B (en) | 1998-04-01 |
Family
ID=14154177
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086100683A TW329047B (en) | 1996-12-04 | 1997-01-22 | Semiconductor integrated circuit device providing DRAM semiconductor circuit device |
Country Status (3)
Country | Link |
---|---|
AU (1) | AU1040297A (en) |
TW (1) | TW329047B (en) |
WO (1) | WO1998025271A1 (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3962850B2 (en) * | 2000-01-20 | 2007-08-22 | カシオ電子工業株式会社 | Control device for SDRAM |
JP5138869B2 (en) | 2002-11-28 | 2013-02-06 | ルネサスエレクトロニクス株式会社 | Memory module and memory system |
US8392650B2 (en) | 2010-04-01 | 2013-03-05 | Intel Corporation | Fast exit from self-refresh state of a memory device |
US8484410B2 (en) | 2010-04-12 | 2013-07-09 | Intel Corporation | Method to stagger self refreshes |
EP3385857A4 (en) * | 2015-11-30 | 2018-12-26 | Pezy Computing K.K. | Die and package, and manufacturing method for die and producing method for package |
CN115932530B (en) * | 2023-01-09 | 2023-06-02 | 东莞市兆恒机械有限公司 | Method for calibrating semiconductor detection equipment |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3255828B2 (en) * | 1994-09-21 | 2002-02-12 | 松下電器産業株式会社 | Semiconductor integrated circuit |
JPH08167703A (en) * | 1994-10-11 | 1996-06-25 | Matsushita Electric Ind Co Ltd | Semiconductor device, manufacture thereof, memory core chip and memory peripheral circuit chip |
JP2915312B2 (en) * | 1995-02-10 | 1999-07-05 | インターナショナル・ビジネス・マシーンズ・コーポレイション | Semiconductor integrated circuit device |
JPH08221313A (en) * | 1995-02-14 | 1996-08-30 | Hitachi Ltd | Semiconductor device |
-
1996
- 1996-12-04 WO PCT/JP1996/003548 patent/WO1998025271A1/en active Application Filing
- 1996-12-04 AU AU10402/97A patent/AU1040297A/en not_active Abandoned
-
1997
- 1997-01-22 TW TW086100683A patent/TW329047B/en active
Also Published As
Publication number | Publication date |
---|---|
WO1998025271A1 (en) | 1998-06-11 |
AU1040297A (en) | 1998-06-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6675269B2 (en) | Semiconductor device with memory controller that controls page mode access | |
US7149824B2 (en) | Dynamically setting burst length of memory device by applying signal to at least one external pin during a read or write transaction | |
JP5490361B2 (en) | Read register of volatile memory | |
US5715203A (en) | Semiconductor memory device and automatic bit line precharge method therefor | |
US4792929A (en) | Data processing system with extended memory access | |
ES2143975T3 (en) | MEMORY. | |
DE3782500D1 (en) | SHARED STORAGE INTERFACE FOR DATA PROCESSING SYSTEM. | |
EP0452510A4 (en) | Semiconductor memory device | |
TW329047B (en) | Semiconductor integrated circuit device providing DRAM semiconductor circuit device | |
EP0420646A3 (en) | Semiconductor memory device having capacitor through which data read/write is carried out | |
DE3780813D1 (en) | DATA TRANSFER CIRCUIT. | |
KR920022297A (en) | Dynamic Random Access Memory Device | |
JP6817587B2 (en) | In-vehicle detection system | |
JPS57117055A (en) | Memory extension system of microcomputer | |
JPS57196332A (en) | Microcomputer interface | |
KR920007777Y1 (en) | Memory access unit | |
KR940008182B1 (en) | D-ram access device | |
KR900005309A (en) | Storage module for interlacing data processing unit | |
JPS6489099A (en) | Restorage device | |
KR900010573A (en) | Access Memory Expansion Circuit of Direct Memory Access Controller | |
JP2019109557A (en) | Semiconductor storage apparatus and image processing apparatus | |
JPH09198866A (en) | Semiconductor storage device | |
JPH11143768A (en) | Microprocessor and memory system | |
JPS61142590A (en) | Semiconductor memory device | |
JPS5698772A (en) | Magnetic bubble memory device |