ATE171010T1 - Logik-schaltung mit vertikal gestapelten heteroübergangsfeldeffekttransistoren - Google Patents

Logik-schaltung mit vertikal gestapelten heteroübergangsfeldeffekttransistoren

Info

Publication number
ATE171010T1
ATE171010T1 AT92306041T AT92306041T ATE171010T1 AT E171010 T1 ATE171010 T1 AT E171010T1 AT 92306041 T AT92306041 T AT 92306041T AT 92306041 T AT92306041 T AT 92306041T AT E171010 T1 ATE171010 T1 AT E171010T1
Authority
AT
Austria
Prior art keywords
channel
source
drain regions
field effect
vertically stacked
Prior art date
Application number
AT92306041T
Other languages
English (en)
Inventor
Theodore X Zhu
William J Ooms
Jonathan K Abrokwah
Carl L Shurboff
Herbert Goronkin
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Application granted granted Critical
Publication of ATE171010T1 publication Critical patent/ATE171010T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/903—FET configuration adapted for use as static memory cell

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Logic Circuits (AREA)
AT92306041T 1991-07-02 1992-06-30 Logik-schaltung mit vertikal gestapelten heteroübergangsfeldeffekttransistoren ATE171010T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/724,636 US5243206A (en) 1991-07-02 1991-07-02 Logic circuit using vertically stacked heterojunction field effect transistors

Publications (1)

Publication Number Publication Date
ATE171010T1 true ATE171010T1 (de) 1998-09-15

Family

ID=24911221

Family Applications (1)

Application Number Title Priority Date Filing Date
AT92306041T ATE171010T1 (de) 1991-07-02 1992-06-30 Logik-schaltung mit vertikal gestapelten heteroübergangsfeldeffekttransistoren

Country Status (5)

Country Link
US (1) US5243206A (de)
EP (1) EP0521700B1 (de)
JP (1) JPH05206384A (de)
AT (1) ATE171010T1 (de)
DE (1) DE69226909T2 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9226847D0 (en) * 1992-12-23 1993-02-17 Hitachi Europ Ltd Complementary conductive device
US5349214A (en) * 1993-09-13 1994-09-20 Motorola, Inc. Complementary heterojunction device
US5479033A (en) * 1994-05-27 1995-12-26 Sandia Corporation Complementary junction heterostructure field-effect transistor
US5739557A (en) * 1995-02-06 1998-04-14 Motorola, Inc. Refractory gate heterostructure field effect transistor
US5940695A (en) 1996-10-11 1999-08-17 Trw Inc. Gallium antimonide complementary HFET
JP2004533107A (ja) * 2001-03-09 2004-10-28 ウイスコンシン アラムニ リサーチ ファンデーション ナノ構造化論理ゲートを用いたソリッド・ステート量子ドット装置及び量子計算法
US6534822B1 (en) * 2001-07-17 2003-03-18 Advanced Micro Devices, Inc. Silicon on insulator field effect transistor with a double Schottky gate structure
JP2006196802A (ja) * 2005-01-17 2006-07-27 Sony Corp 半導体装置および半導体装置の製造方法
US7544572B2 (en) * 2005-11-30 2009-06-09 Advanced Micro Devices, Inc. Multi-operational mode transistor with multiple-channel device structure
US8110450B2 (en) 2007-12-19 2012-02-07 Palo Alto Research Center Incorporated Printed TFT and TFT array with self-aligned gate
US8735903B2 (en) * 2010-02-10 2014-05-27 Taiwan Semiconductor Manufacturing Company, Ltd. Density of states engineered field effect transistor
US9029956B2 (en) 2011-10-26 2015-05-12 Global Foundries, Inc. SRAM cell with individual electrical device threshold control
US9048136B2 (en) 2011-10-26 2015-06-02 GlobalFoundries, Inc. SRAM cell with individual electrical device threshold control
US10186514B1 (en) 2017-09-06 2019-01-22 Qualcomm Incorporated Bi-stable static random access memory (SRAM) bit cells formed from III-V compounds and configured to achieve higher operating speeds
US10312244B2 (en) 2017-09-19 2019-06-04 Qualcomm Incorporated Bi-stable static random access memory (SRAM) bit cells that facilitate direct writing for storage
US11799268B2 (en) * 2020-08-24 2023-10-24 Geoff W. Taylor Semiconductor integrated circuit and methodology for making same
CN113130635B (zh) * 2021-04-22 2022-09-20 厦门芯一代集成电路有限公司 一种i型栅的mos器件及其制备方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4743951A (en) * 1982-03-08 1988-05-10 International Business Machines Corporation Field effect transistor
US4768076A (en) * 1984-09-14 1988-08-30 Hitachi, Ltd. Recrystallized CMOS with different crystal planes
US4882608A (en) * 1987-02-09 1989-11-21 International Business Machines Corporation Multilayer semiconductor device having multiple paths of current flow
JPH0687500B2 (ja) * 1987-03-26 1994-11-02 日本電気株式会社 半導体記憶装置およびその製造方法
FR2619250B1 (fr) * 1987-08-05 1990-05-11 Thomson Hybrides Microondes Transistor hyperfrequence a double heterojonction
US5113231A (en) * 1989-09-07 1992-05-12 California Institute Of Technology Quantum-effect semiconductor devices
US5079601A (en) * 1989-12-20 1992-01-07 International Business Machines Corporation Optoelectronic devices based on intraband transitions in combinations of type i and type ii tunnel junctions
US5010386A (en) * 1989-12-26 1991-04-23 Texas Instruments Incorporated Insulator separated vertical CMOS
US5060031A (en) * 1990-09-18 1991-10-22 Motorola, Inc Complementary heterojunction field effect transistor with an anisotype N+ ga-channel devices
US5142349A (en) * 1991-07-01 1992-08-25 Motorola, Inc. Self-doped high performance complementary heterojunction field effect transistor

Also Published As

Publication number Publication date
EP0521700A1 (de) 1993-01-07
JPH05206384A (ja) 1993-08-13
DE69226909D1 (de) 1998-10-15
EP0521700B1 (de) 1998-09-09
US5243206A (en) 1993-09-07
DE69226909T2 (de) 1999-06-17

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Legal Events

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