ATE160238T1 - Vielfache elektrode elektrostatische haltevorrichtung - Google Patents

Vielfache elektrode elektrostatische haltevorrichtung

Info

Publication number
ATE160238T1
ATE160238T1 AT95111186T AT95111186T ATE160238T1 AT E160238 T1 ATE160238 T1 AT E160238T1 AT 95111186 T AT95111186 T AT 95111186T AT 95111186 T AT95111186 T AT 95111186T AT E160238 T1 ATE160238 T1 AT E160238T1
Authority
AT
Austria
Prior art keywords
chuck
electrode
substrate
support
insulator
Prior art date
Application number
AT95111186T
Other languages
English (en)
Inventor
Shamouil Shamouilian
Samuel Broydo
Manoocher Birang
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of ATE160238T1 publication Critical patent/ATE160238T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Jigs For Machine Tools (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Micromachines (AREA)
  • Electron Tubes For Measurement (AREA)
AT95111186T 1994-07-15 1995-07-17 Vielfache elektrode elektrostatische haltevorrichtung ATE160238T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/276,010 US5646814A (en) 1994-07-15 1994-07-15 Multi-electrode electrostatic chuck

Publications (1)

Publication Number Publication Date
ATE160238T1 true ATE160238T1 (de) 1997-11-15

Family

ID=23054769

Family Applications (1)

Application Number Title Priority Date Filing Date
AT95111186T ATE160238T1 (de) 1994-07-15 1995-07-17 Vielfache elektrode elektrostatische haltevorrichtung

Country Status (6)

Country Link
US (1) US5646814A (de)
EP (1) EP0692814B1 (de)
JP (1) JPH08203991A (de)
KR (1) KR960005930A (de)
AT (1) ATE160238T1 (de)
DE (1) DE69501018T2 (de)

Families Citing this family (66)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1995020838A1 (en) * 1994-01-31 1995-08-03 Applied Materials, Inc. Electrostatic chuck with conformal insulator film
US5801915A (en) * 1994-01-31 1998-09-01 Applied Materials, Inc. Electrostatic chuck having a unidirectionally conducting coupler layer
US6071630A (en) * 1996-03-04 2000-06-06 Shin-Etsu Chemical Co., Ltd. Electrostatic chuck
US5751537A (en) * 1996-05-02 1998-05-12 Applied Materials, Inc. Multielectrode electrostatic chuck with fuses
US6055150A (en) * 1996-05-02 2000-04-25 Applied Materials, Inc. Multi-electrode electrostatic chuck having fuses in hollow cavities
US5745332A (en) * 1996-05-08 1998-04-28 Applied Materials, Inc. Monopolar electrostatic chuck having an electrode in contact with a workpiece
US5865938A (en) * 1996-06-25 1999-02-02 Xerox Corporation Wafer chuck for inducing an electrical bias across wafer heterojunctions
JPH10144668A (ja) * 1996-11-14 1998-05-29 Tokyo Electron Ltd プラズマ処理方法
JPH10158815A (ja) * 1996-11-29 1998-06-16 Nissin Electric Co Ltd 静電チャック用被保持物配置部材及びその製造方法並びに静電チャック
US6117246A (en) * 1997-01-31 2000-09-12 Applied Materials, Inc. Conductive polymer pad for supporting a workpiece upon a workpiece support surface of an electrostatic chuck
US5880923A (en) * 1997-06-09 1999-03-09 Applied Materials Inc. Method and apparatus for improved retention of a semiconductor wafer within a semiconductor wafer processing system
GB2329515B (en) 1997-09-18 2002-03-13 Trikon Equip Ltd Platen for semiconductor workpieces
JP3847920B2 (ja) * 1997-10-06 2006-11-22 株式会社アルバック 静電吸着ホットプレート、真空処理装置、及び真空処理方法
US5880924A (en) * 1997-12-01 1999-03-09 Applied Materials, Inc. Electrostatic chuck capable of rapidly dechucking a substrate
US5969934A (en) * 1998-04-10 1999-10-19 Varian Semiconductor Equipment Associats, Inc. Electrostatic wafer clamp having low particulate contamination of wafers
WO2000026960A1 (fr) * 1998-10-29 2000-05-11 Tokyo Electron Limited Dispositif de traitement sous vide
US6259592B1 (en) 1998-11-19 2001-07-10 Applied Materials, Inc. Apparatus for retaining a workpiece upon a workpiece support and method of manufacturing same
DE19853588B4 (de) * 1998-11-20 2005-04-21 Leica Microsystems Lithography Gmbh Halteeinrichtung für ein Substrat
JP3805134B2 (ja) * 1999-05-25 2006-08-02 東陶機器株式会社 絶縁性基板吸着用静電チャック
US6273958B2 (en) 1999-06-09 2001-08-14 Applied Materials, Inc. Substrate support for plasma processing
US6500299B1 (en) 1999-07-22 2002-12-31 Applied Materials Inc. Chamber having improved gas feed-through and method
WO2001011431A2 (en) 1999-08-06 2001-02-15 Applied Materials, Inc. Method and apparatus of holding semiconductor wafers for lithography and other wafer processes
US6488820B1 (en) * 1999-08-23 2002-12-03 Applied Materials, Inc. Method and apparatus for reducing migration of conductive material on a component
US6362946B1 (en) 1999-11-02 2002-03-26 Varian Semiconductor Equipment Associates, Inc. Electrostatic wafer clamp having electrostatic seal for retaining gas
US6538873B1 (en) 1999-11-02 2003-03-25 Varian Semiconductor Equipment Associates, Inc. Active electrostatic seal and electrostatic vacuum pump
US6478924B1 (en) 2000-03-07 2002-11-12 Applied Materials, Inc. Plasma chamber support having dual electrodes
US6544339B1 (en) * 2000-03-22 2003-04-08 Micro C Technologies, Inc. Rectilinear wedge geometry for optimal process control in chemical vapor deposition and rapid thermal processing
TW517265B (en) * 2000-06-23 2003-01-11 Applied Materials Inc Apparatus for supporting a substrate and method of fabricating same
JP4634581B2 (ja) * 2000-07-06 2011-02-16 キヤノンアネルバ株式会社 スパッタリング方法、表面処理方法、スパッタリング装置及び表面処理装置
US20030107865A1 (en) * 2000-12-11 2003-06-12 Shinsuke Masuda Wafer handling apparatus and method of manufacturing the same
KR20020046214A (ko) * 2000-12-11 2002-06-20 어드밴스드 세라믹스 인터내셔날 코포레이션 정전척 및 그 제조방법
WO2002073654A1 (en) * 2001-03-13 2002-09-19 Applied Materials, Inc. Plasma chamber support having dual electrodes
DE10122036B4 (de) * 2001-05-07 2009-12-24 Karl Suss Dresden Gmbh Substrathaltevorrichtung für Prober zum Testen von Schaltungsanordnungen auf scheibenförmigen Substraten
JP4346877B2 (ja) * 2002-08-29 2009-10-21 東京エレクトロン株式会社 静電吸着装置および処理装置
JP4082985B2 (ja) * 2002-11-01 2008-04-30 信越化学工業株式会社 静電吸着機能を有する加熱装置及びその製造方法
JP4302428B2 (ja) * 2003-05-09 2009-07-29 信越化学工業株式会社 静電吸着機能を有するウエーハ加熱装置
EP1498777A1 (de) * 2003-07-15 2005-01-19 ASML Netherlands B.V. Substrathalter und lithographischer Projektionsapparat
JP4057977B2 (ja) * 2003-08-08 2008-03-05 株式会社巴川製紙所 静電チャック装置用電極シート、静電チャック装置および吸着方法
US20070223173A1 (en) * 2004-03-19 2007-09-27 Hiroshi Fujisawa Bipolar Electrostatic Chuck
CN100470755C (zh) * 2004-03-19 2009-03-18 创意科技股份有限公司 双极型静电吸盘
US7300707B2 (en) * 2004-10-25 2007-11-27 Creative Technology Corporation Aluminium composite structure having a channel therein and method of manufacturing the same
JP4588653B2 (ja) * 2005-03-16 2010-12-01 東京エレクトロン株式会社 基板加熱機能を有する基板載置機構および基板処理装置
DE202005011367U1 (de) 2005-07-18 2005-09-29 Retzlaff, Udo, Dr. Transfer-ESC auf Wafer-Basis
KR100898793B1 (ko) * 2005-12-29 2009-05-20 엘지디스플레이 주식회사 액정표시소자용 기판 합착 장치
KR100965407B1 (ko) 2006-03-06 2010-06-24 엘아이지에이디피 주식회사 다중 전극 패턴을 가지는 정전척
JP2008041993A (ja) * 2006-08-08 2008-02-21 Shinko Electric Ind Co Ltd 静電チャック
JP4126084B1 (ja) * 2007-07-23 2008-07-30 信越エンジニアリング株式会社 静電チャックの表面電位制御方法
JP2009246325A (ja) * 2008-03-28 2009-10-22 Creative Technology:Kk 静電チャック
FR2936158A1 (fr) * 2008-09-24 2010-03-26 Plasto Interface chirurgicale pour plaie, sans support
US20120037068A1 (en) * 2010-08-11 2012-02-16 Applied Materials, Inc. Composite substrates for direct heating and increased temperature uniformity
US8840754B2 (en) * 2010-09-17 2014-09-23 Lam Research Corporation Polar regions for electrostatic de-chucking with lift pins
EP2686736B1 (de) * 2011-03-17 2014-12-17 ASML Netherlands BV Elektrostatische klammer, lithografische vorrichtung und geräteherstellungsverfahren
CN103165381B (zh) * 2011-12-15 2016-08-24 中微半导体设备(上海)有限公司 一种控制所负载基板温度的静电卡盘及等离子体处理装置
US9472444B2 (en) * 2012-08-23 2016-10-18 Taiwan Semiconductor Manufacturing Co., Ltd. Wafer support device
WO2014073554A1 (ja) * 2012-11-06 2014-05-15 日本碍子株式会社 サセプタ
KR101905158B1 (ko) 2013-08-06 2018-10-08 어플라이드 머티어리얼스, 인코포레이티드 국부적으로 가열되는 다-구역 기판 지지부
US20160230269A1 (en) * 2015-02-06 2016-08-11 Applied Materials, Inc. Radially outward pad design for electrostatic chuck surface
US20170069518A1 (en) * 2015-09-04 2017-03-09 Globalfoundries Inc. Electrostatic substrate holder with non-planar surface and method of etching
US10668558B2 (en) * 2016-03-29 2020-06-02 Ngk Insulators, Ltd. Metal wiring bonding structure and production method therefor
KR102155512B1 (ko) * 2017-05-22 2020-09-14 (주)코미코 반도체 제조용 정전척의 아킹 현상 개선방법
JP6924618B2 (ja) * 2017-05-30 2021-08-25 東京エレクトロン株式会社 静電チャック及びプラズマ処理装置
JP6811144B2 (ja) * 2017-05-30 2021-01-13 東京エレクトロン株式会社 プラズマ処理装置の静電チャックを運用する方法
JP2019057531A (ja) * 2017-09-19 2019-04-11 モメンティブ・パフォーマンス・マテリアルズ・ジャパン合同会社 ウエハ支持装置
CN111326468A (zh) * 2018-12-14 2020-06-23 夏泰鑫半导体(青岛)有限公司 静电吸盘装置
US11380573B2 (en) * 2020-06-04 2022-07-05 Tokyo Electron Limited Structure for automatic in-situ replacement of a part of an electrostatic chuck
JP2022148714A (ja) * 2021-03-24 2022-10-06 新光電気工業株式会社 静電チャック、基板固定装置

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3837856A (en) 1967-04-04 1974-09-24 Signetics Corp Method for removing photoresist in manufacture of semiconductor devices
US3615951A (en) 1969-06-20 1971-10-26 Ibm Method for etching copper
US4022947A (en) 1975-11-06 1977-05-10 Airco, Inc. Transparent panel having high reflectivity for solar radiation and a method for preparing same
US4131530A (en) 1977-07-05 1978-12-26 Airco, Inc. Sputtered chromium-alloy coating for plastic
US4184188A (en) * 1978-01-16 1980-01-15 Veeco Instruments Inc. Substrate clamping technique in IC fabrication processes
US4236296A (en) 1978-10-13 1980-12-02 Exxon Research & Engineering Co. Etch method of cleaving semiconductor diode laser wafers
US4388517A (en) 1980-09-22 1983-06-14 Texas Instruments Incorporated Sublimation patterning process
US4384918A (en) * 1980-09-30 1983-05-24 Fujitsu Limited Method and apparatus for dry etching and electrostatic chucking device used therein
JPS57149734A (en) * 1981-03-12 1982-09-16 Anelva Corp Plasma applying working device
US4392992A (en) 1981-06-30 1983-07-12 Motorola, Inc. Chromium-silicon-nitrogen resistor material
US4574177A (en) 1982-02-01 1986-03-04 Texas Instruments Incorporated Plasma etch method for TiO2
US4448636A (en) 1982-06-02 1984-05-15 Texas Instruments Incorporated Laser assisted lift-off
DE3501675A1 (de) 1985-01-19 1986-07-24 Merck Patent Gmbh, 6100 Darmstadt Mittel und verfahren zur entfernung von fotoresist- und stripperresten von halbleitersubstraten
BR8607061A (pt) 1985-12-24 1988-02-23 Gould Inc Processo e aparelho para eletrogalvanizacao de folha de cobre
JPH0773104B2 (ja) 1986-02-14 1995-08-02 富士通株式会社 レジスト剥離方法
JPS6372877A (ja) * 1986-09-12 1988-04-02 Tokuda Seisakusho Ltd 真空処理装置
US5215619A (en) 1986-12-19 1993-06-01 Applied Materials, Inc. Magnetic field-enhanced plasma etch reactor
US5079600A (en) 1987-03-06 1992-01-07 Schnur Joel M High resolution patterning on solid substrates
US4948474A (en) 1987-09-18 1990-08-14 Pennsylvania Research Corporation Copper electroplating solutions and methods
JPH01298721A (ja) * 1988-05-27 1989-12-01 Tokuda Seisakusho Ltd 真空処理装置
US5221422A (en) 1988-06-06 1993-06-22 Digital Equipment Corporation Lithographic technique using laser scanning for fabrication of electronic components and the like
JPH0227748A (ja) * 1988-07-16 1990-01-30 Tomoegawa Paper Co Ltd 静電チャック装置及びその作成方法
US5004525A (en) 1988-08-23 1991-04-02 Shipley Company Inc. Copper electroplating composition
JPH02100341A (ja) 1988-10-06 1990-04-12 Toshiba Corp 半導体装置のパターン形成方法
US5100499A (en) 1989-12-20 1992-03-31 Texas Instruments Incorporated Copper dry etch process using organic and amine radicals
JPH07120646B2 (ja) 1990-05-16 1995-12-20 株式会社東芝 メサ型半導体ペレットの製造方法
US5167748A (en) 1990-09-06 1992-12-01 Charles Evans And Associates Plasma etching method and apparatus
JPH04225525A (ja) 1990-12-27 1992-08-14 Sony Corp ドライエッチング方法
US5185058A (en) 1991-01-29 1993-02-09 Micron Technology, Inc. Process for etching semiconductor devices
JP3225532B2 (ja) 1991-03-29 2001-11-05 ソニー株式会社 ドライエッチング方法
US5155652A (en) * 1991-05-02 1992-10-13 International Business Machines Corporation Temperature cycling ceramic electrostatic chuck
US5201893A (en) 1991-07-25 1993-04-13 Vollrath Group, Inc. Irrigation container and syringe
US5221426A (en) 1991-11-29 1993-06-22 Motorola Inc. Laser etch-back process for forming a metal feature on a non-metal substrate
US5252196A (en) 1991-12-05 1993-10-12 Shipley Company Inc. Copper electroplating solutions and processes
JPH06326175A (ja) 1993-04-22 1994-11-25 Applied Materials Inc 集積回路処理装置において使用されるウエハサポートの誘電材への保護被覆とその形成方法

Also Published As

Publication number Publication date
KR960005930A (ko) 1996-02-23
JPH08203991A (ja) 1996-08-09
DE69501018D1 (de) 1997-12-18
EP0692814A1 (de) 1996-01-17
DE69501018T2 (de) 1998-05-20
EP0692814B1 (de) 1997-11-12
US5646814A (en) 1997-07-08

Similar Documents

Publication Publication Date Title
ATE160238T1 (de) Vielfache elektrode elektrostatische haltevorrichtung
US5764471A (en) Method and apparatus for balancing an electrostatic force produced by an electrostatic chuck
ATE160903T1 (de) Elektrostatische haltevorrichtung für substrat in einen bearbeitungskammer
WO1999010566A3 (en) Process chamber and method for depositing and/or removing material on a substrate
JP4489904B2 (ja) 真空処理装置及び基板保持方法
US5812361A (en) Dynamic feedback electrostatic wafer chuck
JP2867526B2 (ja) 半導体製造装置
EP0887853A3 (de) Elektrostatische Substrathalter zur Verwendung in Prozesskammer
SG71065A1 (en) Anodizing apparatus and method associated with the same
KR940022782A (ko) 웨이퍼 방출방법 및 장치
KR900017140A (ko) 정전식 웨이퍼 이송 블레이드 및 그러한 블레이드에서의 정전 결합력을 최대화하는 방법
DE3889672D1 (de) Vorrichtung zum Behandeln scheibenförmiger Gegenstände.
KR940016390A (ko) 정전척을 가지는 재치대 및 이것을 사용한 플라즈마 처리장치
TW370701B (en) Monopolar electrostatic chuck having an electrode in contact with a workpiece
EP0368334A3 (de) Ätzvorrichtung und Verfahren zu deren Anwendung
KR900003030B1 (en) Programmable device for semiconductor integrated cricuit
FR2455360A1 (fr) Dispositif pour maintenir par force electrostatique des pieces a usiner, notamment des plaquettes de semi-conducteurs
EP0311419A3 (de) Halbleiteranordnung mit einem bipolaren Transistor und Verfahren zu ihrer Herstellung
WO1998056040A3 (en) Electrostatic chucks
KR20030020072A (ko) 유니폴라 정전척
KR970053315A (ko) 정전척의 구조및 디척킹 방법
JPS5559727A (en) Plasma deposition device
JPS63131521A (ja) ドライエツチング装置
FR2785737B1 (fr) Dispositif de maintien electrostatique
KR0179156B1 (ko) 웨이퍼 고정장치

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties