ATE160238T1 - Vielfache elektrode elektrostatische haltevorrichtung - Google Patents
Vielfache elektrode elektrostatische haltevorrichtungInfo
- Publication number
- ATE160238T1 ATE160238T1 AT95111186T AT95111186T ATE160238T1 AT E160238 T1 ATE160238 T1 AT E160238T1 AT 95111186 T AT95111186 T AT 95111186T AT 95111186 T AT95111186 T AT 95111186T AT E160238 T1 ATE160238 T1 AT E160238T1
- Authority
- AT
- Austria
- Prior art keywords
- chuck
- electrode
- substrate
- support
- insulator
- Prior art date
Links
- 239000000758 substrate Substances 0.000 abstract 5
- 239000012212 insulator Substances 0.000 abstract 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 230000000284 resting effect Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
- Micromachines (AREA)
- Electron Tubes For Measurement (AREA)
- Jigs For Machine Tools (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/276,010 US5646814A (en) | 1994-07-15 | 1994-07-15 | Multi-electrode electrostatic chuck |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE160238T1 true ATE160238T1 (de) | 1997-11-15 |
Family
ID=23054769
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT95111186T ATE160238T1 (de) | 1994-07-15 | 1995-07-17 | Vielfache elektrode elektrostatische haltevorrichtung |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US5646814A (de) |
| EP (1) | EP0692814B1 (de) |
| JP (1) | JPH08203991A (de) |
| KR (1) | KR960005930A (de) |
| AT (1) | ATE160238T1 (de) |
| DE (1) | DE69501018T2 (de) |
Families Citing this family (68)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5801915A (en) * | 1994-01-31 | 1998-09-01 | Applied Materials, Inc. | Electrostatic chuck having a unidirectionally conducting coupler layer |
| JPH08507196A (ja) * | 1994-01-31 | 1996-07-30 | アプライド マテリアルズ インコーポレイテッド | 共形な絶縁体フィルムを有する静電チャック |
| US6071630A (en) * | 1996-03-04 | 2000-06-06 | Shin-Etsu Chemical Co., Ltd. | Electrostatic chuck |
| US5751537A (en) * | 1996-05-02 | 1998-05-12 | Applied Materials, Inc. | Multielectrode electrostatic chuck with fuses |
| US6055150A (en) * | 1996-05-02 | 2000-04-25 | Applied Materials, Inc. | Multi-electrode electrostatic chuck having fuses in hollow cavities |
| US5745332A (en) * | 1996-05-08 | 1998-04-28 | Applied Materials, Inc. | Monopolar electrostatic chuck having an electrode in contact with a workpiece |
| US5865938A (en) * | 1996-06-25 | 1999-02-02 | Xerox Corporation | Wafer chuck for inducing an electrical bias across wafer heterojunctions |
| JPH10144668A (ja) * | 1996-11-14 | 1998-05-29 | Tokyo Electron Ltd | プラズマ処理方法 |
| JPH10158815A (ja) * | 1996-11-29 | 1998-06-16 | Nissin Electric Co Ltd | 静電チャック用被保持物配置部材及びその製造方法並びに静電チャック |
| US6117246A (en) * | 1997-01-31 | 2000-09-12 | Applied Materials, Inc. | Conductive polymer pad for supporting a workpiece upon a workpiece support surface of an electrostatic chuck |
| US5880923A (en) * | 1997-06-09 | 1999-03-09 | Applied Materials Inc. | Method and apparatus for improved retention of a semiconductor wafer within a semiconductor wafer processing system |
| GB2329515B (en) * | 1997-09-18 | 2002-03-13 | Trikon Equip Ltd | Platen for semiconductor workpieces |
| JP3847920B2 (ja) * | 1997-10-06 | 2006-11-22 | 株式会社アルバック | 静電吸着ホットプレート、真空処理装置、及び真空処理方法 |
| US5880924A (en) * | 1997-12-01 | 1999-03-09 | Applied Materials, Inc. | Electrostatic chuck capable of rapidly dechucking a substrate |
| US5969934A (en) * | 1998-04-10 | 1999-10-19 | Varian Semiconductor Equipment Associats, Inc. | Electrostatic wafer clamp having low particulate contamination of wafers |
| EP1132956A4 (de) * | 1998-10-29 | 2005-04-27 | Tokyo Electron Ltd | Vakuumerzeugergerät |
| US6259592B1 (en) | 1998-11-19 | 2001-07-10 | Applied Materials, Inc. | Apparatus for retaining a workpiece upon a workpiece support and method of manufacturing same |
| DE19853588B4 (de) * | 1998-11-20 | 2005-04-21 | Leica Microsystems Lithography Gmbh | Halteeinrichtung für ein Substrat |
| JP3805134B2 (ja) * | 1999-05-25 | 2006-08-02 | 東陶機器株式会社 | 絶縁性基板吸着用静電チャック |
| US6273958B2 (en) | 1999-06-09 | 2001-08-14 | Applied Materials, Inc. | Substrate support for plasma processing |
| US6500299B1 (en) | 1999-07-22 | 2002-12-31 | Applied Materials Inc. | Chamber having improved gas feed-through and method |
| WO2001011431A2 (en) | 1999-08-06 | 2001-02-15 | Applied Materials, Inc. | Method and apparatus of holding semiconductor wafers for lithography and other wafer processes |
| US6488820B1 (en) * | 1999-08-23 | 2002-12-03 | Applied Materials, Inc. | Method and apparatus for reducing migration of conductive material on a component |
| US6362946B1 (en) | 1999-11-02 | 2002-03-26 | Varian Semiconductor Equipment Associates, Inc. | Electrostatic wafer clamp having electrostatic seal for retaining gas |
| US6538873B1 (en) | 1999-11-02 | 2003-03-25 | Varian Semiconductor Equipment Associates, Inc. | Active electrostatic seal and electrostatic vacuum pump |
| US6478924B1 (en) | 2000-03-07 | 2002-11-12 | Applied Materials, Inc. | Plasma chamber support having dual electrodes |
| US6544339B1 (en) * | 2000-03-22 | 2003-04-08 | Micro C Technologies, Inc. | Rectilinear wedge geometry for optimal process control in chemical vapor deposition and rapid thermal processing |
| TW517265B (en) * | 2000-06-23 | 2003-01-11 | Applied Materials Inc | Apparatus for supporting a substrate and method of fabricating same |
| JP4634581B2 (ja) * | 2000-07-06 | 2011-02-16 | キヤノンアネルバ株式会社 | スパッタリング方法、表面処理方法、スパッタリング装置及び表面処理装置 |
| KR20020046214A (ko) * | 2000-12-11 | 2002-06-20 | 어드밴스드 세라믹스 인터내셔날 코포레이션 | 정전척 및 그 제조방법 |
| US20030107865A1 (en) * | 2000-12-11 | 2003-06-12 | Shinsuke Masuda | Wafer handling apparatus and method of manufacturing the same |
| JP2004531880A (ja) * | 2001-03-13 | 2004-10-14 | アプライド マテリアルズ インコーポレイテッド | 二重電極を有する基板の支持体 |
| DE10122036B4 (de) * | 2001-05-07 | 2009-12-24 | Karl Suss Dresden Gmbh | Substrathaltevorrichtung für Prober zum Testen von Schaltungsanordnungen auf scheibenförmigen Substraten |
| JP4346877B2 (ja) * | 2002-08-29 | 2009-10-21 | 東京エレクトロン株式会社 | 静電吸着装置および処理装置 |
| JP4082985B2 (ja) * | 2002-11-01 | 2008-04-30 | 信越化学工業株式会社 | 静電吸着機能を有する加熱装置及びその製造方法 |
| JP4302428B2 (ja) * | 2003-05-09 | 2009-07-29 | 信越化学工業株式会社 | 静電吸着機能を有するウエーハ加熱装置 |
| EP1498777A1 (de) * | 2003-07-15 | 2005-01-19 | ASML Netherlands B.V. | Substrathalter und lithographischer Projektionsapparat |
| JP4057977B2 (ja) * | 2003-08-08 | 2008-03-05 | 株式会社巴川製紙所 | 静電チャック装置用電極シート、静電チャック装置および吸着方法 |
| CN100470755C (zh) * | 2004-03-19 | 2009-03-18 | 创意科技股份有限公司 | 双极型静电吸盘 |
| US20070223173A1 (en) * | 2004-03-19 | 2007-09-27 | Hiroshi Fujisawa | Bipolar Electrostatic Chuck |
| US7300707B2 (en) * | 2004-10-25 | 2007-11-27 | Creative Technology Corporation | Aluminium composite structure having a channel therein and method of manufacturing the same |
| JP4588653B2 (ja) * | 2005-03-16 | 2010-12-01 | 東京エレクトロン株式会社 | 基板加熱機能を有する基板載置機構および基板処理装置 |
| DE202005011367U1 (de) | 2005-07-18 | 2005-09-29 | Retzlaff, Udo, Dr. | Transfer-ESC auf Wafer-Basis |
| KR100898793B1 (ko) * | 2005-12-29 | 2009-05-20 | 엘지디스플레이 주식회사 | 액정표시소자용 기판 합착 장치 |
| KR100965407B1 (ko) | 2006-03-06 | 2010-06-24 | 엘아이지에이디피 주식회사 | 다중 전극 패턴을 가지는 정전척 |
| JP2008041993A (ja) * | 2006-08-08 | 2008-02-21 | Shinko Electric Ind Co Ltd | 静電チャック |
| WO2009013803A1 (ja) * | 2007-07-23 | 2009-01-29 | Shin-Etsu Engineering Co., Ltd. | 静電チャックの表面電位制御方法 |
| JP2009246325A (ja) * | 2008-03-28 | 2009-10-22 | Creative Technology:Kk | 静電チャック |
| FR2936158A1 (fr) * | 2008-09-24 | 2010-03-26 | Plasto | Interface chirurgicale pour plaie, sans support |
| US20120037068A1 (en) * | 2010-08-11 | 2012-02-16 | Applied Materials, Inc. | Composite substrates for direct heating and increased temperature uniformity |
| US8840754B2 (en) * | 2010-09-17 | 2014-09-23 | Lam Research Corporation | Polar regions for electrostatic de-chucking with lift pins |
| KR101872886B1 (ko) * | 2011-03-17 | 2018-06-29 | 에이에스엠엘 네델란즈 비.브이. | 정전기 클램프, 리소그래피 장치, 및 디바이스 제조 방법 |
| CN103165381B (zh) * | 2011-12-15 | 2016-08-24 | 中微半导体设备(上海)有限公司 | 一种控制所负载基板温度的静电卡盘及等离子体处理装置 |
| US9472444B2 (en) * | 2012-08-23 | 2016-10-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Wafer support device |
| KR101413898B1 (ko) * | 2012-11-06 | 2014-06-30 | 엔지케이 인슐레이터 엘티디 | 서셉터 |
| WO2015020813A1 (en) | 2013-08-06 | 2015-02-12 | Applied Materials, Inc. | Locally heated multi-zone substrate support |
| US20160230269A1 (en) * | 2015-02-06 | 2016-08-11 | Applied Materials, Inc. | Radially outward pad design for electrostatic chuck surface |
| US20170069518A1 (en) * | 2015-09-04 | 2017-03-09 | Globalfoundries Inc. | Electrostatic substrate holder with non-planar surface and method of etching |
| US10029328B2 (en) * | 2016-03-29 | 2018-07-24 | Ngk Insulators, Ltd. | Metal wiring bonding structure and production method therefor |
| KR102155512B1 (ko) * | 2017-05-22 | 2020-09-14 | (주)코미코 | 반도체 제조용 정전척의 아킹 현상 개선방법 |
| JP6924618B2 (ja) * | 2017-05-30 | 2021-08-25 | 東京エレクトロン株式会社 | 静電チャック及びプラズマ処理装置 |
| JP6811144B2 (ja) * | 2017-05-30 | 2021-01-13 | 東京エレクトロン株式会社 | プラズマ処理装置の静電チャックを運用する方法 |
| JP2019057531A (ja) * | 2017-09-19 | 2019-04-11 | モメンティブ・パフォーマンス・マテリアルズ・ジャパン合同会社 | ウエハ支持装置 |
| CN111326468A (zh) * | 2018-12-14 | 2020-06-23 | 夏泰鑫半导体(青岛)有限公司 | 静电吸盘装置 |
| US11270903B2 (en) * | 2019-12-17 | 2022-03-08 | Applied Materials, Inc. | Multi zone electrostatic chuck |
| US11380573B2 (en) * | 2020-06-04 | 2022-07-05 | Tokyo Electron Limited | Structure for automatic in-situ replacement of a part of an electrostatic chuck |
| JP7670316B2 (ja) * | 2021-03-24 | 2025-04-30 | 新光電気工業株式会社 | 静電チャック、基板固定装置 |
| US12476091B2 (en) | 2023-04-18 | 2025-11-18 | Tokyo Electron Limited | Electrostatic chuck and method of operation for plasma processing |
Family Cites Families (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3837856A (en) | 1967-04-04 | 1974-09-24 | Signetics Corp | Method for removing photoresist in manufacture of semiconductor devices |
| US3615951A (en) | 1969-06-20 | 1971-10-26 | Ibm | Method for etching copper |
| US4022947A (en) | 1975-11-06 | 1977-05-10 | Airco, Inc. | Transparent panel having high reflectivity for solar radiation and a method for preparing same |
| US4131530A (en) | 1977-07-05 | 1978-12-26 | Airco, Inc. | Sputtered chromium-alloy coating for plastic |
| US4184188A (en) * | 1978-01-16 | 1980-01-15 | Veeco Instruments Inc. | Substrate clamping technique in IC fabrication processes |
| US4236296A (en) | 1978-10-13 | 1980-12-02 | Exxon Research & Engineering Co. | Etch method of cleaving semiconductor diode laser wafers |
| US4388517A (en) | 1980-09-22 | 1983-06-14 | Texas Instruments Incorporated | Sublimation patterning process |
| US4384918A (en) * | 1980-09-30 | 1983-05-24 | Fujitsu Limited | Method and apparatus for dry etching and electrostatic chucking device used therein |
| JPS57149734A (en) * | 1981-03-12 | 1982-09-16 | Anelva Corp | Plasma applying working device |
| US4392992A (en) | 1981-06-30 | 1983-07-12 | Motorola, Inc. | Chromium-silicon-nitrogen resistor material |
| US4574177A (en) | 1982-02-01 | 1986-03-04 | Texas Instruments Incorporated | Plasma etch method for TiO2 |
| US4448636A (en) | 1982-06-02 | 1984-05-15 | Texas Instruments Incorporated | Laser assisted lift-off |
| DE3501675A1 (de) | 1985-01-19 | 1986-07-24 | Merck Patent Gmbh, 6100 Darmstadt | Mittel und verfahren zur entfernung von fotoresist- und stripperresten von halbleitersubstraten |
| WO1987003915A1 (en) | 1985-12-24 | 1987-07-02 | Gould Inc. | A process and apparatus for electroplating copper foil |
| JPH0773104B2 (ja) | 1986-02-14 | 1995-08-02 | 富士通株式会社 | レジスト剥離方法 |
| JPS6372877A (ja) * | 1986-09-12 | 1988-04-02 | Tokuda Seisakusho Ltd | 真空処理装置 |
| US5215619A (en) | 1986-12-19 | 1993-06-01 | Applied Materials, Inc. | Magnetic field-enhanced plasma etch reactor |
| US5079600A (en) | 1987-03-06 | 1992-01-07 | Schnur Joel M | High resolution patterning on solid substrates |
| US4948474A (en) | 1987-09-18 | 1990-08-14 | Pennsylvania Research Corporation | Copper electroplating solutions and methods |
| JPH01298721A (ja) * | 1988-05-27 | 1989-12-01 | Tokuda Seisakusho Ltd | 真空処理装置 |
| US5221422A (en) | 1988-06-06 | 1993-06-22 | Digital Equipment Corporation | Lithographic technique using laser scanning for fabrication of electronic components and the like |
| JPH0227748A (ja) * | 1988-07-16 | 1990-01-30 | Tomoegawa Paper Co Ltd | 静電チャック装置及びその作成方法 |
| US5004525A (en) | 1988-08-23 | 1991-04-02 | Shipley Company Inc. | Copper electroplating composition |
| JPH02100341A (ja) | 1988-10-06 | 1990-04-12 | Toshiba Corp | 半導体装置のパターン形成方法 |
| US5100499A (en) | 1989-12-20 | 1992-03-31 | Texas Instruments Incorporated | Copper dry etch process using organic and amine radicals |
| JPH07120646B2 (ja) | 1990-05-16 | 1995-12-20 | 株式会社東芝 | メサ型半導体ペレットの製造方法 |
| US5167748A (en) | 1990-09-06 | 1992-12-01 | Charles Evans And Associates | Plasma etching method and apparatus |
| JPH04225525A (ja) | 1990-12-27 | 1992-08-14 | Sony Corp | ドライエッチング方法 |
| US5185058A (en) | 1991-01-29 | 1993-02-09 | Micron Technology, Inc. | Process for etching semiconductor devices |
| JP3225532B2 (ja) | 1991-03-29 | 2001-11-05 | ソニー株式会社 | ドライエッチング方法 |
| US5155652A (en) * | 1991-05-02 | 1992-10-13 | International Business Machines Corporation | Temperature cycling ceramic electrostatic chuck |
| US5201893A (en) | 1991-07-25 | 1993-04-13 | Vollrath Group, Inc. | Irrigation container and syringe |
| US5221426A (en) | 1991-11-29 | 1993-06-22 | Motorola Inc. | Laser etch-back process for forming a metal feature on a non-metal substrate |
| US5252196A (en) | 1991-12-05 | 1993-10-12 | Shipley Company Inc. | Copper electroplating solutions and processes |
| JPH06326175A (ja) | 1993-04-22 | 1994-11-25 | Applied Materials Inc | 集積回路処理装置において使用されるウエハサポートの誘電材への保護被覆とその形成方法 |
-
1994
- 1994-07-15 US US08/276,010 patent/US5646814A/en not_active Expired - Fee Related
-
1995
- 1995-07-15 KR KR1019950021255A patent/KR960005930A/ko not_active Ceased
- 1995-07-17 DE DE69501018T patent/DE69501018T2/de not_active Expired - Fee Related
- 1995-07-17 AT AT95111186T patent/ATE160238T1/de not_active IP Right Cessation
- 1995-07-17 JP JP18018095A patent/JPH08203991A/ja not_active Withdrawn
- 1995-07-17 EP EP95111186A patent/EP0692814B1/de not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| DE69501018T2 (de) | 1998-05-20 |
| DE69501018D1 (de) | 1997-12-18 |
| EP0692814B1 (de) | 1997-11-12 |
| KR960005930A (ko) | 1996-02-23 |
| EP0692814A1 (de) | 1996-01-17 |
| US5646814A (en) | 1997-07-08 |
| JPH08203991A (ja) | 1996-08-09 |
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