TW376561B - Electrostatic chuck having a thermal transfer regulator pad - Google Patents

Electrostatic chuck having a thermal transfer regulator pad

Info

Publication number
TW376561B
TW376561B TW087108104A TW87108104A TW376561B TW 376561 B TW376561 B TW 376561B TW 087108104 A TW087108104 A TW 087108104A TW 87108104 A TW87108104 A TW 87108104A TW 376561 B TW376561 B TW 376561B
Authority
TW
Taiwan
Prior art keywords
substrate
electrostatic chuck
electrostatic
base
process chamber
Prior art date
Application number
TW087108104A
Other languages
Chinese (zh)
Inventor
Ralph M Wadensweiler
Ajay Kumar
Shashank C Deshmukh
Weinan Jiang
Rolf A Guenther
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of TW376561B publication Critical patent/TW376561B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833Details of electrostatic chucks
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T279/00Chucks or sockets
    • Y10T279/23Chucks or sockets with magnetic or electrostatic means

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
  • Jigs For Machine Tools (AREA)

Abstract

An electrostatic chuck 75 for holding a substrate 25 in a process chamber 20, comprises an electrostatic member 80 comprising an insulator having an electrode 95 therein, and a receiving surface 98 for receiving the substrate 25. A base 85 supports the electrostatic member 80, the base 85 comprises a first thermal resistance R8 and has a lower surface 102. A thermal pad 100 is positioned between the receiving surface 98 of the electrostatic member 80 and the lower surface 102 of the base 85. The thermal pad 100 comprises a second thermal resistance RP that is sufficiently different from the thermal resistance R8 of the base 85, to provide predetermined temperatures across a processing surface of the substrate 25 during processing in the process chamber 20. An electrostatic chuck for holding a substrate in a process chamber, the electrostatic chuck comprising an electrostatic member comprising a dielectric covering an electrode, the dielectric having a receiving surface for receiving the substrate, and a pad positioned below the electrostatic member to control thermal transfer rates from the substrate during processing of the substrate in the process chamber.
TW087108104A 1997-06-27 1998-05-25 Electrostatic chuck having a thermal transfer regulator pad TW376561B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/883,994 US5978202A (en) 1997-06-27 1997-06-27 Electrostatic chuck having a thermal transfer regulator pad

Publications (1)

Publication Number Publication Date
TW376561B true TW376561B (en) 1999-12-11

Family

ID=25383751

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087108104A TW376561B (en) 1997-06-27 1998-05-25 Electrostatic chuck having a thermal transfer regulator pad

Country Status (5)

Country Link
US (1) US5978202A (en)
EP (1) EP0887853A3 (en)
JP (1) JPH1187481A (en)
KR (1) KR19990007363A (en)
TW (1) TW376561B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI616925B (en) * 2013-12-30 2018-03-01 Plasma processing device, electrostatic chuck and electrostatic chuck manufacturing method

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US7697260B2 (en) * 2004-03-31 2010-04-13 Applied Materials, Inc. Detachable electrostatic chuck
US8038796B2 (en) 2004-12-30 2011-10-18 Lam Research Corporation Apparatus for spatial and temporal control of temperature on a substrate
JP4482472B2 (en) * 2005-03-24 2010-06-16 日本碍子株式会社 Electrostatic chuck and manufacturing method thereof
JP2007088411A (en) * 2005-06-28 2007-04-05 Hitachi High-Technologies Corp Electrostatic attraction device, wafer processing apparatus and plasma processing method
US7525787B2 (en) * 2005-09-30 2009-04-28 Lam Research Corporation Electrostatic chuck assembly with dielectric material and/or cavity having varying thickness, profile and/or shape, method of use and apparatus incorporating same
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US8226769B2 (en) 2006-04-27 2012-07-24 Applied Materials, Inc. Substrate support with electrostatic chuck having dual temperature zones
US9275887B2 (en) 2006-07-20 2016-03-01 Applied Materials, Inc. Substrate processing with rapid temperature gradient control
US20080073032A1 (en) * 2006-08-10 2008-03-27 Akira Koshiishi Stage for plasma processing apparatus, and plasma processing apparatus
JP5233092B2 (en) * 2006-08-10 2013-07-10 東京エレクトロン株式会社 Mounting table for plasma processing apparatus and plasma processing apparatus
US8741098B2 (en) * 2006-08-10 2014-06-03 Tokyo Electron Limited Table for use in plasma processing system and plasma processing system
KR101042782B1 (en) * 2006-09-19 2011-06-20 가부시키가이샤 크리에이티브 테크놀러지 Feeding structure of electrostatic chuck, method for producing the same, and method for regenerating feeding structure of electrostatic chuck
US7723648B2 (en) * 2006-09-25 2010-05-25 Tokyo Electron Limited Temperature controlled substrate holder with non-uniform insulation layer for a substrate processing system
US7838800B2 (en) * 2006-09-25 2010-11-23 Tokyo Electron Limited Temperature controlled substrate holder having erosion resistant insulating layer for a substrate processing system
US7589950B2 (en) * 2006-10-13 2009-09-15 Applied Materials, Inc. Detachable electrostatic chuck having sealing assembly
US7598150B2 (en) * 2006-11-20 2009-10-06 Applied Materials, Inc. Compensation techniques for substrate heating processes
JP4695606B2 (en) * 2007-01-09 2011-06-08 東京エレクトロン株式会社 Method for improving heat conduction of focus ring in substrate mounting apparatus
US8449679B2 (en) 2008-08-15 2013-05-28 Lam Research Corporation Temperature controlled hot edge ring assembly
WO2010036707A2 (en) * 2008-09-26 2010-04-01 Lam Research Corporation Adjustable thermal contact between an electrostatic chuck and a hot edge ring by clocking a coupling ring
JP5996340B2 (en) * 2012-09-07 2016-09-21 東京エレクトロン株式会社 Plasma etching equipment
JP6413646B2 (en) * 2014-10-31 2018-10-31 住友大阪セメント株式会社 Electrostatic chuck device
US9845533B2 (en) * 2014-11-11 2017-12-19 Applied Materials, Inc. Substrate carrier system utilizing electrostatic chucking to accommodate substrate size heterogeneity
JP6393161B2 (en) * 2014-11-21 2018-09-19 東京エレクトロン株式会社 Deposition equipment
JP6254516B2 (en) * 2014-12-19 2017-12-27 東京エレクトロン株式会社 Substrate processing apparatus and substrate processing method
JP6873058B2 (en) * 2015-06-29 2021-05-19 ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド Device for holding the board
WO2017056835A1 (en) * 2015-09-29 2017-04-06 京セラ株式会社 Sample holder
US10340171B2 (en) 2016-05-18 2019-07-02 Lam Research Corporation Permanent secondary erosion containment for electrostatic chuck bonds
US11069553B2 (en) * 2016-07-07 2021-07-20 Lam Research Corporation Electrostatic chuck with features for preventing electrical arcing and light-up and improving process uniformity
US10910195B2 (en) 2017-01-05 2021-02-02 Lam Research Corporation Substrate support with improved process uniformity
CN112166496B (en) * 2018-05-28 2024-05-03 日本特殊陶业株式会社 Holding device and method for manufacturing holding device
JP7386624B2 (en) * 2019-06-14 2023-11-27 日本特殊陶業株式会社 Holding device and method for manufacturing the holding device
KR102420344B1 (en) * 2019-11-04 2022-07-14 세메스 주식회사 Spin chuck
JP7515310B2 (en) * 2020-06-10 2024-07-12 東京エレクトロン株式会社 Mounting table, substrate processing apparatus, and substrate processing method

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI616925B (en) * 2013-12-30 2018-03-01 Plasma processing device, electrostatic chuck and electrostatic chuck manufacturing method

Also Published As

Publication number Publication date
KR19990007363A (en) 1999-01-25
US5978202A (en) 1999-11-02
EP0887853A2 (en) 1998-12-30
JPH1187481A (en) 1999-03-30
EP0887853A3 (en) 2000-03-15

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