ATE101303T1 - Kaskaden-montierung von parallelgeschalteten transistoren realisiert in hybridschaltungstechnologie. - Google Patents

Kaskaden-montierung von parallelgeschalteten transistoren realisiert in hybridschaltungstechnologie.

Info

Publication number
ATE101303T1
ATE101303T1 AT90119251T AT90119251T ATE101303T1 AT E101303 T1 ATE101303 T1 AT E101303T1 AT 90119251 T AT90119251 T AT 90119251T AT 90119251 T AT90119251 T AT 90119251T AT E101303 T1 ATE101303 T1 AT E101303T1
Authority
AT
Austria
Prior art keywords
cascading
hybrid circuit
transistors connected
circuit technology
realized
Prior art date
Application number
AT90119251T
Other languages
English (en)
Inventor
Jacques Chave
Original Assignee
Alsthom Gec
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alsthom Gec filed Critical Alsthom Gec
Application granted granted Critical
Publication of ATE101303T1 publication Critical patent/ATE101303T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Electronic Switches (AREA)
  • Logic Circuits (AREA)
  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
AT90119251T 1989-10-11 1990-10-08 Kaskaden-montierung von parallelgeschalteten transistoren realisiert in hybridschaltungstechnologie. ATE101303T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR8913277A FR2652983B1 (fr) 1989-10-11 1989-10-11 Montage en cascade d'etages de transistors en parallele realise en circuit hybride.
EP90119251A EP0422554B1 (de) 1989-10-11 1990-10-08 Kaskaden-Montierung von parallelgeschalteten Transistoren realisiert in Hybridschaltungstechnologie

Publications (1)

Publication Number Publication Date
ATE101303T1 true ATE101303T1 (de) 1994-02-15

Family

ID=9386284

Family Applications (1)

Application Number Title Priority Date Filing Date
AT90119251T ATE101303T1 (de) 1989-10-11 1990-10-08 Kaskaden-montierung von parallelgeschalteten transistoren realisiert in hybridschaltungstechnologie.

Country Status (7)

Country Link
US (1) US5040050A (de)
EP (1) EP0422554B1 (de)
JP (1) JPH03150868A (de)
AT (1) ATE101303T1 (de)
DE (1) DE69006447T2 (de)
ES (1) ES2050906T3 (de)
FR (1) FR2652983B1 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7402846B2 (en) * 2005-10-20 2008-07-22 Atmel Corporation Electrostatic discharge (ESD) protection structure and a circuit using the same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE27730E (en) * 1969-08-19 1973-08-14 Difference amplifier with parallel, isolated emitter configuration
IT1212708B (it) * 1983-02-28 1989-11-30 Ates Componenti Elettron Dispositivo di potenza a semiconduttore costituito da una molteplicita' di elementi attivi uguali collegati in parallelo.
JPH088269B2 (ja) * 1986-10-22 1996-01-29 シーメンス、アクチエンゲゼルシヤフト 半導体デバイス
US4907068A (en) * 1987-01-21 1990-03-06 Siemens Aktiengesellschaft Semiconductor arrangement having at least one semiconductor body
FR2620862B1 (fr) * 1987-09-17 1990-04-06 Thomson Semiconducteurs Montage en parallele de transistors mos de puissance

Also Published As

Publication number Publication date
EP0422554A1 (de) 1991-04-17
DE69006447D1 (de) 1994-03-17
ES2050906T3 (es) 1994-06-01
DE69006447T2 (de) 1994-05-11
FR2652983A1 (fr) 1991-04-12
US5040050A (en) 1991-08-13
EP0422554B1 (de) 1994-02-02
JPH03150868A (ja) 1991-06-27
FR2652983B1 (fr) 1993-04-30

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Legal Events

Date Code Title Description
UEP Publication of translation of european patent specification
REN Ceased due to non-payment of the annual fee